TW575793B - Undercoating composition for photolithographic resist - Google Patents

Undercoating composition for photolithographic resist Download PDF

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Publication number
TW575793B
TW575793B TW86105114A TW86105114A TW575793B TW 575793 B TW575793 B TW 575793B TW 86105114 A TW86105114 A TW 86105114A TW 86105114 A TW86105114 A TW 86105114A TW 575793 B TW575793 B TW 575793B
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TW
Taiwan
Prior art keywords
group
patent application
undercoating composition
compound
photolithographic resist
Prior art date
Application number
TW86105114A
Other languages
English (en)
Inventor
Mitsuru Sato
Katsumi Oomori
Etsuko Iguchi
Kiyoshi Ishikawa
Fumitake Kaneko
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Application granted granted Critical
Publication of TW575793B publication Critical patent/TW575793B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Description

575793 A8 B8 C8 D8 >、申請專利範圍4 底塗組成物，其中該成份（A 2 )中的A 1或A 2所表經取代 基芳基爲經取代苯基或經取代萘基。 8 .如申請專利範圍第1項之光學照像鈾刻光阻用之 底塗組成物，其中作爲該成份（A 2 )的甲亞胺化合物爲 3-硝基一4一羥基一N—(4-二乙胺基亞苄基）苯胺 〇 9 .如申請專利範圍第1項之光學照像鈾刻光阻用之 底塗組成物，其中作爲成份（A 3 )的芳族甲亞胺化合物 係選自下面構造式所表化合物所成組合之中者： (請先閱讀背面之注意事項再填寫本頁) r·
0H
0H (C2 Hs ) 2N^~CH = N^-〇-CH^C-0-^-N = CH-<g>-N (C2 H5 ) 0 0 訂 (C2 H5 ) N〇2 iN〇2 N普CH = N善0-C鲁C一= 普N (C: HS ) •〇 0 O-C-^C^O (C2H5)2N^CH = N-(〇^0CH3 ch3 0½-N = CH普N (C2 Hs ) 經濟部智慧財產局員工消費合作社印製 N0r (C2 Hs ) z N^-CH = N-<^--〇-C^g) NO： 〇 C-0-^)-N = CH--{g>-N (C2 Hs ) 0 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 575793 A8 B8 C8 D8 申請專利範圍5 〇 IIo-c (C； CH3〇Hg)-N = CHH(g)~N{C2H5) 和 II o-c (C2H5 )2N-<〇)~i 3 C-00 V CH3On(g)-CH = N-(g^N (C2Hs (請先閱讀背面之注意事項再填寫本頁) _裝· 經濟部智慧財產局員工消費合作社印製 1 0 · —種光學照像蝕刻造圖用的光阻材料，其爲一* 積層體，包括： (a ) —基材： (b ) —底塗層，其係用一底塗組成物在該基材的一表面 上形成者，該底塗組成物爲在有機溶劑中的均勻溶液形式 且其包括： (A) —種選自下列（Al) 、 ( A 2 ) 、 （A3)中的 紫外光吸收劑 (A 1 )二苯甲酮化合物，如下通式所表者，其具有至少 一個胺基或經C，- C 6烷基取代基胺基 0 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 5 - 訂 575793 A8 B8 C8 D8 々、申請專利範圍6 _裝—— (請先閱讀背面之注意事項再填寫本頁) 其中下附字m和η彼此獨立地各爲1或2且R 1和R 2彼此獨 立地各表胺基，C i - C 6烷基取代胺基或羥基，一分子中的 R1和R 2所表基中至少有一者爲胺基或*：，— C6烷基取代胺 基， (A 2 )如下通式所表芳族甲亞胺化合物 A1-CH = N- A2 其中A 1和A 2彼此獨立地各表C 6 - C i 〇芳基，且其具有選 自下列所成組合中的取代基：胺基，C 1 一 C 6烷基取代胺基 ，學基，硝基，鹵素原子，Ci—C6烷基和Cp C6烷氧基 ;一分子中的A1和A2中至少有一者爲含胺基或Ci-Cs烷 基取代胺基取代基之C 6 - C i 〇芳基，及 (A 3 )如下通式所表呈酞酸或酞酸的二酯形式之芳族甲 亞胺化合物
〇 〇 經濟部智慧財產局員工消費合作社印製 其中R 3和R 4基彼此獨立地各表選自下列所成組合中的取代 基：胺基，C ! - C 6烷基取代胺基，羥基，硝基，鹵素原子 ，Ci — C6院基和Ci — C6院氧基；其中R3和R4取代基中 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） -6 - 575793 A8 B8 C8 D8 六、申請專利範圍7 至少有一者爲未經取代胺基或c X所表二價基爲式-C…-或-…H—甲亞胺聯 / C 6烷基取代胺基，且各 結；及 β) —交聯劑，其爲如下通式所袠的二聚氯胺化合物 R5 R5、 Re，
N 經濟部智慧財產局員工消費合作社印製 其中R5和R6所表的六個基各爲氫原子’甲醇基或Cl 一 烷氧甲基，但其限制條件爲六個基中至少有兩個爲甲醇基 或Cl — C6院氧甲基； 其中成份（A )對成份（B )的重量比例係在1 : 1至1 :1 0的範圍內； (C) 2 ，2 / ，4，4 / —四羥基二苯甲酮，其添加量 不超過以成份（A )和（B )總量計算的8 0重量％ ;以 及 (c ) 一光敏性組成物的光阻層，其係在該底塗層的表面 上形成的。 1 1 ·如申請專利範圍第1 0項之光學照像造圖用光 阻材料，其中該底塗層具有在〇·〇5至〇. 3微米範圍 內之厚度。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公楚） (請先閲讀背面之注意事項再填寫本頁)
-7 575793
8 8 8 8 ABCD 六、申請專利範圍8 1 2 .如申請專利範圍第1 0項之光學照像蝕刻造圖 用之光阻材料，其中該光阻層具有0. 5至5微米範圍內 之厚度。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） -8-
TW86105114A 1996-04-25 1997-04-19 Undercoating composition for photolithographic resist TW575793B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10592196A JP3436843B2 (ja) 1996-04-25 1996-04-25 リソグラフィー用下地材及びそれを用いたリソグラフィー用レジスト材料

Publications (1)

Publication Number Publication Date
TW575793B true TW575793B (en) 2004-02-11

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TW86105114A TW575793B (en) 1996-04-25 1997-04-19 Undercoating composition for photolithographic resist

Country Status (7)

Country Link
US (2) US5939510A (zh)
EP (1) EP0803777B1 (zh)
JP (1) JP3436843B2 (zh)
KR (1) KR100266731B1 (zh)
DE (1) DE69702422T2 (zh)
HK (1) HK1001421A1 (zh)
TW (1) TW575793B (zh)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5948847A (en) * 1996-12-13 1999-09-07 Tokyo Ohka Kogyo Co., Ltd. Undercoating composition for photolithographic patterning
EE05627B1 (et) * 1998-12-23 2013-02-15 Pfizer Inc. CTLA-4 vastased inimese monoklonaalsed antikehad
TW476865B (en) * 1999-01-28 2002-02-21 Tokyo Ohka Kogyo Co Ltd Undercoating composition for photolithographic resist
US6544717B2 (en) 1999-01-28 2003-04-08 Tokyo Ohka Kogyo Co., Ltd. Undercoating composition for photolithographic resist
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
EP1190277B1 (en) 1999-06-10 2009-10-07 AlliedSignal Inc. Semiconductor having spin-on-glass anti-reflective coatings for photolithography
US6323310B1 (en) 2000-04-19 2001-11-27 Brewer Science, Inc. Anti-reflective coating compositions comprising polymerized aminoplasts
US6653411B2 (en) 2000-04-19 2003-11-25 Brewer Science, Inc. Anti-reflective coating compositions comprising polymerized aminoplasts
NL1015524C2 (nl) * 2000-06-26 2001-12-28 Otb Group Bv Werkwijze ter vervaardiging van een substraat om te worden toegepast in een stampervervaardigingsproces, alsmede substraat verkregen volgens een dergelijke werkwijze.
AU8500701A (en) * 2000-08-17 2002-02-25 Shipley Co Llc Etch resistant antireflective coating compositions
JP2004519803A (ja) * 2001-02-27 2004-07-02 Ｔｄｋ株式会社 光情報媒体用フォトレジスト原盤の製造方法および光情報媒体用スタンパの製造方法
US6593055B2 (en) * 2001-09-05 2003-07-15 Kodak Polychrome Graphics Llc Multi-layer thermally imageable element
JP2003085829A (ja) * 2001-09-06 2003-03-20 Tdk Corp 光情報媒体用スタンパの製造方法およびこれに用いるフォトレジスト原盤、ならびに、光情報媒体用スタンパおよび光情報媒体
TW591341B (en) 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
JP2003140347A (ja) * 2001-11-02 2003-05-14 Tokyo Ohka Kogyo Co Ltd 厚膜ホトレジスト層積層体、厚膜レジストパターンの製造方法、および接続端子の製造方法
TWI228718B (en) * 2001-11-05 2005-03-01 Tdk Corp Manufacturing method and device of mold plate for information medium
KR20040075866A (ko) 2001-11-15 2004-08-30 허니웰 인터내셔날 인코포레이티드 포토리소그래피용 스핀-온 무반사 코팅
WO2003058613A1 (fr) * 2001-12-28 2003-07-17 Tdk Corporation Procede de fabrication d'une matrice de pressage pour support d'informations, matrice de pressage et disque original photosensible
TWI264717B (en) 2002-01-08 2006-10-21 Tdk Corp Manufacturing method of stamper for manufacturing data medium, the stamper, and the photoresist template
TWI258142B (en) * 2002-01-08 2006-07-11 Tdk Corp Manufacturing method of stamper for manufacturing data medium, the stamper, and the stamper spacer with template
WO2003058614A1 (fr) * 2002-01-08 2003-07-17 Tdk Corporation Procede de fabrication de matrice pour faconnage de support d'information, matrice et disque maitre de photoresine
WO2003077239A1 (fr) * 2002-03-11 2003-09-18 Tdk Corporation Procede de traitement conçu pour une matrice en resine photosensible, procede de production d'une matrice utilisant un support d'enregistrement, procede de production d'un support d'enregistrement, matrice en resine photosensible, matrice utilisant un support d'enregistrment et support d'enregistrement
JP2004013973A (ja) * 2002-06-05 2004-01-15 Tdk Corp フォトレジスト原盤の製造方法、光記録媒体製造用スタンパの製造方法、スタンパ、フォトレジスト原盤、スタンパ中間体及び光記録媒体
US7038328B2 (en) * 2002-10-15 2006-05-02 Brewer Science Inc. Anti-reflective compositions comprising triazine compounds
JP4523258B2 (ja) * 2003-10-07 2010-08-11 ハッコールケミカル株式会社 凸版印刷用感光性積層印刷原版に用いる紫外線吸収剤及びその製造方法
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US20050151283A1 (en) * 2004-01-08 2005-07-14 Bajorek Christopher H. Method and apparatus for making a stamper for patterning CDs and DVDs
US7427466B2 (en) * 2004-11-29 2008-09-23 Imation Corp. Anti-reflection optical data storage disk master
JP2006154570A (ja) * 2004-11-30 2006-06-15 Tokyo Ohka Kogyo Co Ltd レジストパターンおよび導体パターンの製造方法
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
EP3194502A4 (en) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
US11262656B2 (en) * 2016-03-31 2022-03-01 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4197392A (en) * 1978-08-21 1980-04-08 General Electric Company Melamine coatings
SU1052529A1 (ru) * 1982-02-03 1983-11-07 Киевский Филиал По Специальным Видам Печати Всесоюзного Научно-Исследовательского Института Комплексных Проблем Полиграфии Лак
US4910122A (en) * 1982-09-30 1990-03-20 Brewer Science, Inc. Anti-reflective coating
JPS60223121A (ja) * 1984-04-19 1985-11-07 Matsushita Electric Ind Co Ltd パタ−ン形成方法
DE3736758A1 (de) * 1987-10-30 1989-05-11 Hoechst Ag Positiv arbeitendes lichtempfindliches gemisch, enthaltend einen farbstoff, und daraus hergestelltes positiv arbeitendes lichtempfindliches aufzeichnungsmaterial
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US5234990A (en) * 1992-02-12 1993-08-10 Brewer Science, Inc. Polymers with intrinsic light-absorbing properties for anti-reflective coating applications in deep ultraviolet microlithography
US5294680A (en) * 1992-07-24 1994-03-15 International Business Machines Corporation Polymeric dyes for antireflective coatings
JP3024694B2 (ja) * 1993-11-29 2000-03-21 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP2953562B2 (ja) * 1994-07-18 1999-09-27 東京応化工業株式会社 リソグラフィー用下地材及びそれを用いた多層レジスト材料
US5498514A (en) * 1994-08-09 1996-03-12 Tokyo Ohka Kogyo Co., Ltd. Lithographic double-coated patterning plate with undercoat levelling layer
US5652317A (en) * 1996-08-16 1997-07-29 Hoechst Celanese Corporation Antireflective coatings for photoresist compositions

Also Published As

Publication number Publication date
DE69702422D1 (de) 2000-08-10
KR970072029A (ko) 1997-11-07
KR100266731B1 (ko) 2000-09-15
JPH09292715A (ja) 1997-11-11
EP0803777A1 (en) 1997-10-29
US5939510A (en) 1999-08-17
JP3436843B2 (ja) 2003-08-18
EP0803777B1 (en) 2000-07-05
DE69702422T2 (de) 2000-12-14
US6087068A (en) 2000-07-11
HK1001421A1 (en) 1998-06-19

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