TW570990B - Silicon substrate or silicon sputtering target and manufacturing method thereof - Google Patents

Silicon substrate or silicon sputtering target and manufacturing method thereof Download PDF

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Publication number
TW570990B
TW570990B TW92113449A TW92113449A TW570990B TW 570990 B TW570990 B TW 570990B TW 92113449 A TW92113449 A TW 92113449A TW 92113449 A TW92113449 A TW 92113449A TW 570990 B TW570990 B TW 570990B
Authority
TW
Taiwan
Prior art keywords
substrate
silicon
less
manufacturing
oxygen content
Prior art date
Application number
TW92113449A
Other languages
English (en)
Chinese (zh)
Other versions
TW200402478A (en
Inventor
Kenichi Osada
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Application granted granted Critical
Publication of TW570990B publication Critical patent/TW570990B/zh
Publication of TW200402478A publication Critical patent/TW200402478A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
TW92113449A 2002-08-12 2003-05-19 Silicon substrate or silicon sputtering target and manufacturing method thereof TW570990B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002234417 2002-08-12

Publications (2)

Publication Number Publication Date
TW570990B true TW570990B (en) 2004-01-11
TW200402478A TW200402478A (en) 2004-02-16

Family

ID=31884350

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92113449A TW570990B (en) 2002-08-12 2003-05-19 Silicon substrate or silicon sputtering target and manufacturing method thereof

Country Status (2)

Country Link
TW (1) TW570990B (ja)
WO (1) WO2004016823A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2096189A1 (en) * 2008-02-28 2009-09-02 Applied Materials, Inc. Sprayed Si- or Si:Al-target with low iron content
CN103702937A (zh) * 2011-05-16 2014-04-02 波士顿硅材料有限公司 金属硅的生产和应用
CN111118437A (zh) * 2019-12-31 2020-05-08 广州市尤特新材料有限公司 一种旋转硅磷合金靶材及其制备方法与应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4775547A (en) * 1987-02-25 1988-10-04 General Electric Company RF plasma method of forming multilayer reinforced composites
JPH05222528A (ja) * 1991-12-18 1993-08-31 Asahi Glass Co Ltd セラミックス回転カソードターゲット及びその製造方法
DE4220472C2 (de) * 1992-03-05 2002-08-22 Industrieanlagen Betriebsges Verfahren zur Herstellung von Leichtbaureflektoren mittels Silicium-Wafern
JPH06346232A (ja) * 1993-06-11 1994-12-20 Asahi Glass Co Ltd スパッタリング用ターゲットおよびその製造方法
EP0960955A1 (en) * 1998-05-26 1999-12-01 Universiteit Gent Method and apparatus for flame spraying to form a tough coating
EP1235948B1 (en) * 1999-12-03 2005-10-12 N.V. Bekaert S.A. Sputtering target and methods of making same

Also Published As

Publication number Publication date
WO2004016823A1 (ja) 2004-02-26
TW200402478A (en) 2004-02-16

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