TW557583B - A multi-layer inductor formed in a semiconductor substrate - Google Patents
A multi-layer inductor formed in a semiconductor substrate Download PDFInfo
- Publication number
- TW557583B TW557583B TW091121020A TW91121020A TW557583B TW 557583 B TW557583 B TW 557583B TW 091121020 A TW091121020 A TW 091121020A TW 91121020 A TW91121020 A TW 91121020A TW 557583 B TW557583 B TW 557583B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- conductive
- patent application
- item
- scope
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/20—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/972,482 US6639298B2 (en) | 2001-06-28 | 2001-10-05 | Multi-layer inductor formed in a semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW557583B true TW557583B (en) | 2003-10-11 |
Family
ID=25519707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091121020A TW557583B (en) | 2001-10-05 | 2002-09-13 | A multi-layer inductor formed in a semiconductor substrate |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6639298B2 (enExample) |
| JP (1) | JP4903971B2 (enExample) |
| KR (1) | KR100939648B1 (enExample) |
| GB (1) | GB2381130B (enExample) |
| TW (1) | TW557583B (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6573148B1 (en) * | 2000-07-12 | 2003-06-03 | Koninklljke Philips Electronics N.V. | Methods for making semiconductor inductor |
| US6635948B2 (en) * | 2001-12-05 | 2003-10-21 | Micron Technology, Inc. | Semiconductor device with electrically coupled spiral inductors |
| US7129561B2 (en) * | 2003-11-19 | 2006-10-31 | International Business Machines Corporation | Tri-metal and dual-metal stacked inductors |
| US7262680B2 (en) | 2004-02-27 | 2007-08-28 | Illinois Institute Of Technology | Compact inductor with stacked via magnetic cores for integrated circuits |
| DE102004014752B4 (de) * | 2004-03-25 | 2008-11-20 | Infineon Technologies Ag | Halbleiterbauelement mit kernlosem Wandler und Halbbrücke |
| JP4541847B2 (ja) * | 2004-11-22 | 2010-09-08 | Okiセミコンダクタ株式会社 | 位置合わせ精度検出方法 |
| US7714688B2 (en) * | 2005-01-20 | 2010-05-11 | Avx Corporation | High Q planar inductors and IPD applications |
| US7867787B2 (en) * | 2007-12-31 | 2011-01-11 | Intel Corporation | Forming inductor and transformer structures with magnetic materials using damascene processing for integrated circuits |
| US9735110B2 (en) * | 2008-09-26 | 2017-08-15 | Rohm Co., Ltd. | Semiconductor device and semiconductor device manufacturing method |
| US8410576B2 (en) * | 2010-06-16 | 2013-04-02 | National Semiconductor Corporation | Inductive structure and method of forming the inductive structure with an attached core structure |
| US8692608B2 (en) | 2011-09-19 | 2014-04-08 | United Microelectronics Corp. | Charge pump system capable of stabilizing an output voltage |
| US9030221B2 (en) | 2011-09-20 | 2015-05-12 | United Microelectronics Corporation | Circuit structure of test-key and test method thereof |
| US8395455B1 (en) | 2011-10-14 | 2013-03-12 | United Microelectronics Corp. | Ring oscillator |
| US8421509B1 (en) | 2011-10-25 | 2013-04-16 | United Microelectronics Corp. | Charge pump circuit with low clock feed-through |
| US8588020B2 (en) | 2011-11-16 | 2013-11-19 | United Microelectronics Corporation | Sense amplifier and method for determining values of voltages on bit-line pair |
| US8493806B1 (en) | 2012-01-03 | 2013-07-23 | United Microelectronics Corporation | Sense-amplifier circuit of memory and calibrating method thereof |
| US8970197B2 (en) | 2012-08-03 | 2015-03-03 | United Microelectronics Corporation | Voltage regulating circuit configured to have output voltage thereof modulated digitally |
| US8724404B2 (en) | 2012-10-15 | 2014-05-13 | United Microelectronics Corp. | Memory, supply voltage generation circuit, and operation method of a supply voltage generation circuit used for a memory array |
| US8669897B1 (en) | 2012-11-05 | 2014-03-11 | United Microelectronics Corp. | Asynchronous successive approximation register analog-to-digital converter and operating method thereof |
| US8711598B1 (en) | 2012-11-21 | 2014-04-29 | United Microelectronics Corp. | Memory cell and memory cell array using the same |
| US8873295B2 (en) | 2012-11-27 | 2014-10-28 | United Microelectronics Corporation | Memory and operation method thereof |
| US8643521B1 (en) | 2012-11-28 | 2014-02-04 | United Microelectronics Corp. | Digital-to-analog converter with greater output resistance |
| US9030886B2 (en) | 2012-12-07 | 2015-05-12 | United Microelectronics Corp. | Memory device and driving method thereof |
| US8953401B2 (en) | 2012-12-07 | 2015-02-10 | United Microelectronics Corp. | Memory device and method for driving memory array thereof |
| US8917109B2 (en) | 2013-04-03 | 2014-12-23 | United Microelectronics Corporation | Method and device for pulse width estimation |
| US9577023B2 (en) * | 2013-06-04 | 2017-02-21 | Globalfoundries Inc. | Metal wires of a stacked inductor |
| US9105355B2 (en) | 2013-07-04 | 2015-08-11 | United Microelectronics Corporation | Memory cell array operated with multiple operation voltage |
| US8859384B1 (en) | 2013-08-01 | 2014-10-14 | International Business Machines Corporation | Inductor formation with sidewall image transfer |
| US8947911B1 (en) | 2013-11-07 | 2015-02-03 | United Microelectronics Corp. | Method and circuit for optimizing bit line power consumption |
| US8866536B1 (en) | 2013-11-14 | 2014-10-21 | United Microelectronics Corp. | Process monitoring circuit and method |
| US9143143B2 (en) | 2014-01-13 | 2015-09-22 | United Microelectronics Corp. | VCO restart up circuit and method thereof |
| CN105742251B (zh) | 2014-12-09 | 2019-10-18 | 联华电子股份有限公司 | 具有电感和金属-绝缘层-金属电容的结构 |
| JP6507027B2 (ja) * | 2015-05-19 | 2019-04-24 | 新光電気工業株式会社 | インダクタ及びその製造方法 |
| CN106876253B (zh) * | 2017-03-10 | 2019-06-04 | 成都海威华芯科技有限公司 | 一种锐角金属图形剥离方法 |
| US10672704B2 (en) * | 2017-11-30 | 2020-06-02 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device with polygonal inductive device |
| US10672859B2 (en) | 2018-06-27 | 2020-06-02 | Intel Corporation | Embedded magnetic inductor |
| CN114203668A (zh) * | 2020-09-02 | 2022-03-18 | 联华电子股份有限公司 | 电感模块及电感模块的制作方法 |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US3614554A (en) | 1968-10-24 | 1971-10-19 | Texas Instruments Inc | Miniaturized thin film inductors for use in integrated circuits |
| NL7900244A (nl) | 1979-01-12 | 1980-07-15 | Philips Nv | Vlakke tweelaags electrische spoel. |
| JPH0269971A (ja) * | 1988-09-05 | 1990-03-08 | Seiko Epson Corp | インダクタンス内蔵型半導体装置 |
| JPH02181961A (ja) * | 1989-01-09 | 1990-07-16 | Nec Corp | 集積回路装置 |
| JPH0377360A (ja) | 1989-08-18 | 1991-04-02 | Mitsubishi Electric Corp | 半導体装置 |
| JP3048592B2 (ja) | 1990-02-20 | 2000-06-05 | ティーディーケイ株式会社 | 積層複合部品 |
| US5227659A (en) | 1990-06-08 | 1993-07-13 | Trustees Of Boston University | Integrated circuit inductor |
| JPH04335531A (ja) * | 1991-05-10 | 1992-11-24 | Mitsubishi Electric Corp | 半導体装置 |
| US5336921A (en) | 1992-01-27 | 1994-08-09 | Motorola, Inc. | Vertical trench inductor |
| US5610433A (en) | 1995-03-13 | 1997-03-11 | National Semiconductor Corporation | Multi-turn, multi-level IC inductor with crossovers |
| US5541442A (en) | 1994-08-31 | 1996-07-30 | International Business Machines Corporation | Integrated compact capacitor-resistor/inductor configuration |
| US5446311A (en) * | 1994-09-16 | 1995-08-29 | International Business Machines Corporation | High-Q inductors in silicon technology without expensive metalization |
| US5559360A (en) | 1994-12-19 | 1996-09-24 | Lucent Technologies Inc. | Inductor for high frequency circuits |
| EP0725407A1 (en) | 1995-02-03 | 1996-08-07 | International Business Machines Corporation | Three-dimensional integrated circuit inductor |
| US5717243A (en) | 1996-04-24 | 1998-02-10 | Harris Corporation | Integrated circuit with an improved inductor structure and method of fabrication |
| US5861647A (en) * | 1996-10-02 | 1999-01-19 | National Semiconductor Corporation | VLSI capacitors and high Q VLSI inductors using metal-filled via plugs |
| US5736749A (en) | 1996-11-19 | 1998-04-07 | Lucent Technologies Inc. | Integrated circuit device with inductor incorporated therein |
| TW308741B (en) | 1996-11-22 | 1997-06-21 | United Microelectronics Corp | Micro-coil structure of integrated circuit and process thereof |
| EP0862218B1 (en) | 1997-02-28 | 2007-02-28 | Telefonaktiebolaget LM Ericsson (publ) | An improved-q inductor with multiple metalization levels |
| US6160303A (en) | 1997-08-29 | 2000-12-12 | Texas Instruments Incorporated | Monolithic inductor with guard rings |
| KR100268906B1 (ko) | 1997-09-29 | 2000-10-16 | 김영환 | 반도체소자의인덕터제조방법 |
| FR2771843B1 (fr) * | 1997-11-28 | 2000-02-11 | Sgs Thomson Microelectronics | Transformateur en circuit integre |
| TW363278B (en) | 1998-01-16 | 1999-07-01 | Winbond Electronics Corp | Preparation method for semiconductor to increase the inductive resonance frequency and Q value |
| US6008102A (en) | 1998-04-09 | 1999-12-28 | Motorola, Inc. | Method of forming a three-dimensional integrated inductor |
| US6166422A (en) | 1998-05-13 | 2000-12-26 | Lsi Logic Corporation | Inductor with cobalt/nickel core for integrated circuit structure with high inductance and high Q-factor |
| JPH11354330A (ja) * | 1998-06-08 | 1999-12-24 | Mitsubishi Materials Corp | 積層チップ部品およびその使用方法 |
| JP3578644B2 (ja) * | 1998-10-12 | 2004-10-20 | Necエレクトロニクス株式会社 | 半導体装置 |
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| JP2000232202A (ja) * | 1998-12-11 | 2000-08-22 | Matsushita Electric Ind Co Ltd | 高周波用高qインダクタ |
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| JP2000269418A (ja) * | 1999-03-17 | 2000-09-29 | Sony Corp | 配線構造、インダクタ及びそれらの形成方法 |
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| US6255714B1 (en) | 1999-06-22 | 2001-07-03 | Agere Systems Guardian Corporation | Integrated circuit having a micromagnetic device including a ferromagnetic core and method of manufacture therefor |
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| US6140197A (en) | 1999-08-30 | 2000-10-31 | Chartered Semiconductor Manufacturing Ltd. | Method of making spiral-type RF inductors having a high quality factor (Q) |
| US6187647B1 (en) | 1999-10-12 | 2001-02-13 | Lucent Technologies Inc. | Method of manufacturing lateral high-Q inductor for semiconductor devices |
| KR20010075974A (ko) * | 2000-01-21 | 2001-08-11 | 이서헌 | 반도체 집적회로 공정에 의한 인덕터 및 제조 방법 |
| US6429504B1 (en) * | 2000-05-16 | 2002-08-06 | Tyco Electronics Corporation | Multilayer spiral inductor and integrated circuits incorporating the same |
| WO2002013271A2 (de) | 2000-08-04 | 2002-02-14 | Infineon Technologies Ag | Integrierte elektronische schaltung mit wenigstens einer induktivität und verfahren zu ihrer herstellung |
| US6420773B1 (en) * | 2000-10-04 | 2002-07-16 | Winbond Electronics Corp. | Multi-level spiral inductor structure having high inductance (L) and high quality factor (Q) |
-
2001
- 2001-10-05 US US09/972,482 patent/US6639298B2/en not_active Expired - Lifetime
-
2002
- 2002-09-13 TW TW091121020A patent/TW557583B/zh not_active IP Right Cessation
- 2002-09-13 GB GB0221301A patent/GB2381130B/en not_active Expired - Fee Related
- 2002-10-04 JP JP2002291750A patent/JP4903971B2/ja not_active Expired - Lifetime
- 2002-10-04 KR KR1020020060412A patent/KR100939648B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6639298B2 (en) | 2003-10-28 |
| GB2381130A (en) | 2003-04-23 |
| JP2003179151A (ja) | 2003-06-27 |
| JP4903971B2 (ja) | 2012-03-28 |
| KR20030029491A (ko) | 2003-04-14 |
| US20030001231A1 (en) | 2003-01-02 |
| GB2381130B (en) | 2006-02-01 |
| GB0221301D0 (en) | 2002-10-23 |
| KR100939648B1 (ko) | 2010-02-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |