KR100818994B1 - 반도체 소자의 제조 방법 - Google Patents
반도체 소자의 제조 방법 Download PDFInfo
- Publication number
- KR100818994B1 KR100818994B1 KR1020060007380A KR20060007380A KR100818994B1 KR 100818994 B1 KR100818994 B1 KR 100818994B1 KR 1020060007380 A KR1020060007380 A KR 1020060007380A KR 20060007380 A KR20060007380 A KR 20060007380A KR 100818994 B1 KR100818994 B1 KR 100818994B1
- Authority
- KR
- South Korea
- Prior art keywords
- soft magnetic
- magnetic thin
- thin film
- film
- group
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims description 32
- 239000010408 film Substances 0.000 claims abstract description 99
- 239000010409 thin film Substances 0.000 claims abstract description 89
- 230000005291 magnetic effect Effects 0.000 claims abstract description 88
- 229910052751 metal Inorganic materials 0.000 claims abstract description 70
- 239000002184 metal Substances 0.000 claims abstract description 70
- 239000011229 interlayer Substances 0.000 claims abstract description 32
- 229910052742 iron Inorganic materials 0.000 claims abstract description 31
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 28
- 229910052796 boron Inorganic materials 0.000 claims abstract description 22
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 22
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 21
- 239000000956 alloy Substances 0.000 claims abstract description 20
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 239000012495 reaction gas Substances 0.000 claims abstract description 11
- 238000000059 patterning Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 41
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 238000010030 laminating Methods 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 34
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 31
- 239000010936 titanium Substances 0.000 description 24
- 230000008569 process Effects 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000035699 permeability Effects 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 229910017052 cobalt Inorganic materials 0.000 description 8
- 239000010941 cobalt Substances 0.000 description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 8
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
Abstract
Description
Claims (16)
- 반도체 기판 상에 층간 절연막을 형성하고,상기 층간 절연막의 상면에 Fe 및 Ti를 포함하는 타겟, 또는 Co 및 Ti를 포함하는 타겟과 N2 반응가스를 사용하는 스퍼터링법에 의해 제 1 연자성 박막을 증착하고,상기 제 1 연자성 박막 상면에 금속막을 형성하고,상기 금속막 상면에 Fe 및 Ti를 포함하는 타겟, 또는 Co 및 Ti를 포함하는 타겟과 N2 반응가스를 사용하는 스퍼터링법에 의해 제 2 연자성 박막을 증착하고,상기 적층된 제 1 연자성 박막, 금속막 및 제 2 연자성 박막을 동일 마스크로 패터닝하여 인덕터를 형성하는 것을 포함하는 반도체 소자의 제조 방법.
- 제 1항에 있어서,상기 제 1 및 제 2 연자성 박막은 5000 내지 10000Å의 두께로 형성하는 반도체 소자의 제조 방법.
- 제 1항에 있어서,상기 금속막은 알루미늄 또는 구리로 형성하는 반도체 소자의 제조 방법.
- 삭제
- 반도체 기판 상에 다수의 하부 배선층을 포함하는 층간 절연막을 형성하고,상기 층간 절연막의 상면에 Fe, Co 및 Ni로 이루어진 그룹에서 선택된 어느 하나의 원소 또는 이들의 합금과 Ti, Hf 및 B로 이루어진 그룹에서 선택된 어느 하나의 원소를 포함하는 타겟과 N2 반응가스를 사용하는 스퍼터링법에 의해 제1 연자성 박막을 증착하고,상기 제 1 연자성 박막 상면에 금속막을 형성하고,상기 금속막 상면에 Fe, Co 및 Ni로 이루어진 그룹에서 선택된 어느 하나의 원소 또는 이들의 합금과 Ti, Hf 및 B로 이루어진 그룹에서 선택된 어느 하나의 원소를 포함하는 타겟과 N2 반응가스를 사용하는 스퍼터링법에 의해 제 2 연자성 박막을 증착하고,상기 적층된 제 1 연자성 박막, 금속막 및 제 2 연자성 박막을 동일 마스크로 패터닝하여 인덕터와 상기 하부 배선층과 커플링되는 배선을 형성하는 것을 포함하는 반도체 소자의 제조 방법.
- 제 5항에 있어서,상기 제 1 및 제 2 연자성 박막은 5000 내지 10000Å의 두께로 형성하는 반도체 소자의 제조 방법.
- 제 5항에 있어서,상기 금속막은 알루미늄 또는 구리로 형성하는 반도체 소자의 제조 방법.
- 제 5항에 있어서,상기 제1 및 제2 연자성 박막을 증착하는 것은 상면에 Fe 및 Ti를 포함하는 타겟, 또는 Co 및 Ti를 포함하는 타겟을 사용하여 증착하는 반도체 소자의 제조 방법.
- 삭제
- 삭제
- 삭제
- 삭제
- 반도체 기판 상에 다수의 하부 배선층을 포함하는 층간 절연막; 및상기 층간 절연막 상의 인덕터와 상기 하부 배선층과 커플링된 배선으로, 상기 인덕터 및 상기 배선은 각각 상기 층간 절연막의 상면의 Fe, Co 및 Ni로 이루어진 그룹에서 선택된 어느 하나의 원소 또는 이들의 합금과 Ti, Hf 및 B로 이루어진 그룹에서 선택된 어느 하나의 원소 및 N를 포함하는 제1 연자성 박막 패턴, 상기 제 1 연자성 박막 패턴 상면의 금속막 패턴, 및 상기 금속막 패턴 상면의 Fe, Co 및 Ni로 이루어진 그룹에서 선택된 어느 하나의 원소 또는 이들의 합금과 Ti, Hf 및 B로 이루어진 그룹에서 선택된 어느 하나의 원소 및 N를 포함하는 제2 연자성 박막 패턴을 포함하는 반도체 소자.
- 제 13항에 있어서,상기 제 1 및 제 2 연자성 박막 패턴은 5000 내지 10000Å의 두께로 형성된 반도체 소자.
- 제 13 항에 있어서,상기 금속막 패턴은 알루미늄막 또는 구리인 반도체 소자.
- 제 13항에 있어서,상기 제1 및 제2 연자성 박막 패턴은 FeTiN인 반도체 소자.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060007380A KR100818994B1 (ko) | 2006-01-24 | 2006-01-24 | 반도체 소자의 제조 방법 |
US11/656,451 US7923814B2 (en) | 2006-01-24 | 2007-01-23 | Semiconductor device including an inductor having soft magnetic thin film patterns and a fabricating method of the same |
US13/083,309 US8216860B2 (en) | 2006-01-24 | 2011-04-08 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060007380A KR100818994B1 (ko) | 2006-01-24 | 2006-01-24 | 반도체 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070077671A KR20070077671A (ko) | 2007-07-27 |
KR100818994B1 true KR100818994B1 (ko) | 2008-04-02 |
Family
ID=38284746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060007380A KR100818994B1 (ko) | 2006-01-24 | 2006-01-24 | 반도체 소자의 제조 방법 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7923814B2 (ko) |
KR (1) | KR100818994B1 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015135870A (ja) * | 2014-01-16 | 2015-07-27 | 富士通株式会社 | インダクタ装置及びインダクタ装置の製造方法 |
US10205374B2 (en) * | 2016-02-01 | 2019-02-12 | Toan Cong Tran | Tran principles, methods of DC pulse electric device without moving parts |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02275605A (ja) * | 1989-01-26 | 1990-11-09 | Fuji Photo Film Co Ltd | 軟磁性薄膜 |
JPH07153912A (ja) * | 1993-09-20 | 1995-06-16 | Matsushita Electric Ind Co Ltd | インダクタ、モノリシックマイクロ波集積回路及びその製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69015652T2 (de) * | 1989-01-26 | 1995-05-11 | Fuji Photo Film Co Ltd | Weichmagnetischer dünner Film, Verfahren zu seiner Herstellung und Magnetkopf. |
JP3522809B2 (ja) | 1993-12-07 | 2004-04-26 | 三菱電機株式会社 | インダクタ |
JPH07268610A (ja) * | 1994-03-28 | 1995-10-17 | Alps Electric Co Ltd | 軟磁性合金薄膜 |
JPH1055916A (ja) * | 1996-08-08 | 1998-02-24 | Kiyoto Yamazawa | 薄型磁気素子およびトランス |
US5793272A (en) * | 1996-08-23 | 1998-08-11 | International Business Machines Corporation | Integrated circuit toroidal inductor |
JP3600415B2 (ja) * | 1997-07-15 | 2004-12-15 | 株式会社東芝 | 分布定数素子 |
US6452247B1 (en) | 1999-11-23 | 2002-09-17 | Intel Corporation | Inductor for integrated circuit |
US6856228B2 (en) * | 1999-11-23 | 2005-02-15 | Intel Corporation | Integrated inductor |
US6573818B1 (en) * | 2000-03-31 | 2003-06-03 | Agere Systems, Inc. | Planar magnetic frame inductors having open cores |
JP2003243631A (ja) * | 2002-02-18 | 2003-08-29 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム |
US6924725B2 (en) * | 2002-03-21 | 2005-08-02 | Infineon Technologies Ag | Coil on a semiconductor substrate and method for its production |
JP3886413B2 (ja) * | 2002-05-17 | 2007-02-28 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
US7262069B2 (en) * | 2005-06-07 | 2007-08-28 | Freescale Semiconductor, Inc. | 3-D inductor and transformer devices in MRAM embedded integrated circuits |
-
2006
- 2006-01-24 KR KR1020060007380A patent/KR100818994B1/ko active IP Right Grant
-
2007
- 2007-01-23 US US11/656,451 patent/US7923814B2/en active Active
-
2011
- 2011-04-08 US US13/083,309 patent/US8216860B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02275605A (ja) * | 1989-01-26 | 1990-11-09 | Fuji Photo Film Co Ltd | 軟磁性薄膜 |
JPH07153912A (ja) * | 1993-09-20 | 1995-06-16 | Matsushita Electric Ind Co Ltd | インダクタ、モノリシックマイクロ波集積回路及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20110183441A1 (en) | 2011-07-28 |
US20070170590A1 (en) | 2007-07-26 |
KR20070077671A (ko) | 2007-07-27 |
US7923814B2 (en) | 2011-04-12 |
US8216860B2 (en) | 2012-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW557583B (en) | A multi-layer inductor formed in a semiconductor substrate | |
US5788854A (en) | Methods for fabrication of thin film inductors, inductor networks, inductor/capactor filters, and integration with other passive and active devices, and the resultant devices | |
EP1396875B1 (en) | 3-D spiral stacked inductor on semiconductor material | |
US6008102A (en) | Method of forming a three-dimensional integrated inductor | |
JP4937495B2 (ja) | キャパシタ装置、電子部品実装構造及びキャパシタ装置の製造方法 | |
TWI236763B (en) | High performance system-on-chip inductor using post passivation process | |
US6013939A (en) | Monolithic inductor with magnetic flux lines guided away from substrate | |
US20030070282A1 (en) | Ultra-miniature magnetic device | |
US11393787B2 (en) | Conductor design for integrated magnetic devices | |
KR101084959B1 (ko) | 반도체 기판에 형성된 스파이럴 인덕터 및 인덕터 형성 방법 | |
KR20030057303A (ko) | 반도체 물질 상의 비아/라인 인덕터 | |
TWI279009B (en) | A thin film multi-layer high Q transformer formed in a semiconductor substrate | |
JP4916715B2 (ja) | 電子部品 | |
JP2000511350A (ja) | 集積回路のための導電体 | |
US20150255208A1 (en) | Chip electronic component and manufacturing method thereof | |
CN101834178A (zh) | 整合型无源元件及其制造方法 | |
JP2003338556A (ja) | 並列積層インダクタ | |
US6069397A (en) | Integrable using amorphous magnetic material circuit inductor | |
KR100818994B1 (ko) | 반도체 소자의 제조 방법 | |
US20120248570A1 (en) | On chip integrated inductor | |
KR100905370B1 (ko) | 고주파 반도체 소자의 인덕터 형성방법 | |
TWI830566B (zh) | 整合有電感線路結構之封裝載板及其製造方法 | |
US20220254868A1 (en) | Asymmetric 8-shaped inductor and corresponding switched capacitor array | |
TW201207873A (en) | Electrical device and method for fabricating the same, spiral inductor device and method for fabricating the same | |
TW200427049A (en) | High performance system-on-chip discrete components using post passivation process |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E90F | Notification of reason for final refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130228 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20140228 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20150302 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20170228 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20180228 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20190228 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20200228 Year of fee payment: 13 |