TW557469B - Method of observing secondary ion image by focused ion beam - Google Patents

Method of observing secondary ion image by focused ion beam Download PDF

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Publication number
TW557469B
TW557469B TW088100531A TW88100531A TW557469B TW 557469 B TW557469 B TW 557469B TW 088100531 A TW088100531 A TW 088100531A TW 88100531 A TW88100531 A TW 88100531A TW 557469 B TW557469 B TW 557469B
Authority
TW
Taiwan
Prior art keywords
ion
image
ion beam
charged particle
particle detector
Prior art date
Application number
TW088100531A
Other languages
English (en)
Chinese (zh)
Inventor
Yasuhiko Sugiyama
Original Assignee
Seiko Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instr Inc filed Critical Seiko Instr Inc
Application granted granted Critical
Publication of TW557469B publication Critical patent/TW557469B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW088100531A 1998-01-23 1999-01-14 Method of observing secondary ion image by focused ion beam TW557469B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10011538A JP2926132B1 (ja) 1998-01-23 1998-01-23 集束イオンビームによる二次イオン像観察方法

Publications (1)

Publication Number Publication Date
TW557469B true TW557469B (en) 2003-10-11

Family

ID=11780750

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088100531A TW557469B (en) 1998-01-23 1999-01-14 Method of observing secondary ion image by focused ion beam

Country Status (4)

Country Link
US (1) US6177670B1 (ko)
JP (1) JP2926132B1 (ko)
KR (1) KR19990068026A (ko)
TW (1) TW557469B (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000048756A (ja) * 1998-07-27 2000-02-18 Seiko Instruments Inc 荷電粒子ビーム光学系の調整を行う方法およびその装置
DE60138002D1 (de) * 2000-01-21 2009-04-30 Fei Co Fokussierte ionenstrahlen mit vorgegebener form und geringer dichte
US6786978B2 (en) * 2000-08-03 2004-09-07 Texas Instruments Incorporated Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching
US6977386B2 (en) * 2001-01-19 2005-12-20 Fei Company Angular aperture shaped beam system and method
US6545346B2 (en) * 2001-03-23 2003-04-08 Intel Corporation Integrated circuit package with a capacitor
JP4667650B2 (ja) * 2001-06-08 2011-04-13 エスアイアイ・ナノテクノロジー株式会社 断面観察方法及び集束イオンビーム装置
US6607976B2 (en) 2001-09-25 2003-08-19 Applied Materials, Inc. Copper interconnect barrier layer structure and formation method
US6670717B2 (en) 2001-10-15 2003-12-30 International Business Machines Corporation Structure and method for charge sensitive electrical devices
JP2004227842A (ja) * 2003-01-21 2004-08-12 Canon Inc プローブ保持装置、試料の取得装置、試料加工装置、試料加工方法、および試料評価方法
JP4024710B2 (ja) * 2003-04-15 2007-12-19 エスアイアイ・ナノテクノロジー株式会社 分割探針の製造方法
JP4344197B2 (ja) * 2003-08-26 2009-10-14 パナソニック株式会社 絶縁膜測定装置、絶縁膜測定方法及び絶縁膜評価装置
JP6266312B2 (ja) * 2013-11-13 2018-01-24 日本電子株式会社 集束イオンビーム装置及びイオンビームの焦点調整方法
KR101618693B1 (ko) * 2014-06-13 2016-05-13 한국표준과학연구원 하전입자 현미경의 주사신호 제어 방법 및 이를 이용한 장치
USD842566S1 (en) 2017-06-15 2019-03-05 Vita-Mix Management Corporation Container scraper

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0763064B2 (ja) * 1986-03-31 1995-07-05 株式会社日立製作所 Ｉｃ素子における配線接続方法
JP2569057B2 (ja) * 1987-07-10 1997-01-08 株式会社日立製作所 Ｘ線マスクの欠陥修正方法
JPH02295040A (ja) * 1989-05-10 1990-12-05 Hitachi Ltd 集束イオンビーム装置
JP3305553B2 (ja) * 1995-11-17 2002-07-22 株式会社荏原製作所 高速原子線源

Also Published As

Publication number Publication date
KR19990068026A (ko) 1999-08-25
JP2926132B1 (ja) 1999-07-28
US6177670B1 (en) 2001-01-23
JPH11213934A (ja) 1999-08-06

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