JPH0135340B2 - - Google Patents
Info
- Publication number
- JPH0135340B2 JPH0135340B2 JP18246485A JP18246485A JPH0135340B2 JP H0135340 B2 JPH0135340 B2 JP H0135340B2 JP 18246485 A JP18246485 A JP 18246485A JP 18246485 A JP18246485 A JP 18246485A JP H0135340 B2 JPH0135340 B2 JP H0135340B2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- workpiece
- scanning
- ion
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 63
- 239000002245 particle Substances 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 4
- 230000003472 neutralizing effect Effects 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60182464A JPS6242157A (ja) | 1985-08-20 | 1985-08-20 | イオンビ−ム照射加工装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60182464A JPS6242157A (ja) | 1985-08-20 | 1985-08-20 | イオンビ−ム照射加工装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6242157A JPS6242157A (ja) | 1987-02-24 |
| JPH0135340B2 true JPH0135340B2 (ko) | 1989-07-25 |
Family
ID=16118719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60182464A Granted JPS6242157A (ja) | 1985-08-20 | 1985-08-20 | イオンビ−ム照射加工装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6242157A (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH077763B2 (ja) * | 1987-03-30 | 1995-01-30 | セイコー電子工業株式会社 | イオンビーム加工方法とその装置 |
| JP2799861B2 (ja) * | 1987-11-16 | 1998-09-21 | セイコーインスツルメンツ株式会社 | パターン膜修正方法 |
| DE9100607U1 (ko) * | 1991-01-19 | 1991-10-17 | Basf Magnetics Gmbh, 6800 Mannheim, De | |
| CN108766877A (zh) * | 2018-04-19 | 2018-11-06 | 中国科学院上海应用物理研究所 | 一种具有周期性的表面电势梯度的材料的制备方法 |
-
1985
- 1985-08-20 JP JP60182464A patent/JPS6242157A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6242157A (ja) | 1987-02-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |