TW512517B - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device Download PDF

Info

Publication number
TW512517B
TW512517B TW089109483A TW89109483A TW512517B TW 512517 B TW512517 B TW 512517B TW 089109483 A TW089109483 A TW 089109483A TW 89109483 A TW89109483 A TW 89109483A TW 512517 B TW512517 B TW 512517B
Authority
TW
Taiwan
Prior art keywords
voltage
reference voltage
detection
power supply
transistor
Prior art date
Application number
TW089109483A
Other languages
English (en)
Chinese (zh)
Inventor
Hirofumi Sonoyama
Yoshiki Kawajiri
Masashi Wada
Jun Eto
Shinji Kawai
Original Assignee
Hitachi Ltd
Mitsubishi Electric Corp
Hitachi Ulsi Sys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Mitsubishi Electric Corp, Hitachi Ulsi Sys Co Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW512517B publication Critical patent/TW512517B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16533—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
    • G01R19/16538—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies
    • G01R19/16552—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies in I.C. power supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Dram (AREA)
TW089109483A 1999-05-18 2000-05-17 Semiconductor integrated circuit device TW512517B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13763099A JP2000331490A (ja) 1999-05-18 1999-05-18 半導体集積回路装置

Publications (1)

Publication Number Publication Date
TW512517B true TW512517B (en) 2002-12-01

Family

ID=15203154

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089109483A TW512517B (en) 1999-05-18 2000-05-17 Semiconductor integrated circuit device

Country Status (4)

Country Link
US (1) US6512398B1 (enExample)
JP (1) JP2000331490A (enExample)
KR (1) KR20010069196A (enExample)
TW (1) TW512517B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10050561B4 (de) * 2000-10-12 2005-04-28 Dialog Semiconductor Gmbh Integrierte Schaltung mit Schaltungsteilen mit unterschiedlicher Versorgungsspannung
KR100403341B1 (ko) * 2001-08-24 2003-11-01 주식회사 하이닉스반도체 파워-업 신호 발생회로
US6989708B2 (en) * 2003-08-13 2006-01-24 Texas Instruments Incorporated Low voltage low power bandgap circuit
KR100859839B1 (ko) 2007-08-29 2008-09-23 주식회사 하이닉스반도체 코아전압 발생회로
CN101839937B (zh) * 2009-03-18 2012-12-05 智原科技股份有限公司 供电检测装置
EP2977849B8 (en) 2014-07-24 2025-08-06 Renesas Design (UK) Limited High-voltage to low-voltage low dropout regulator with self contained voltage reference

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5619156A (en) * 1995-08-29 1997-04-08 Motorola, Inc. Low voltage inhibit circuit and integrated circuit using same
FR2749939B1 (fr) * 1996-06-13 1998-07-31 Sgs Thomson Microelectronics Detecteur de gamme de tension d'alimentation dans un circuit integre
US5852376A (en) * 1996-08-23 1998-12-22 Ramtron International Corporation Bandgap reference based power-on detect circuit including a supression circuit
JPH10247386A (ja) * 1997-03-03 1998-09-14 Mitsubishi Electric Corp 昇圧電位供給回路及び半導体記憶装置
JP2000124744A (ja) * 1998-10-12 2000-04-28 Texas Instr Japan Ltd 定電圧発生回路

Also Published As

Publication number Publication date
US6512398B1 (en) 2003-01-28
JP2000331490A (ja) 2000-11-30
KR20010069196A (ko) 2001-07-23

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees