TW508617B - Temperature control system for plasma processing apparatus - Google Patents
Temperature control system for plasma processing apparatus Download PDFInfo
- Publication number
- TW508617B TW508617B TW089124208A TW89124208A TW508617B TW 508617 B TW508617 B TW 508617B TW 089124208 A TW089124208 A TW 089124208A TW 89124208 A TW89124208 A TW 89124208A TW 508617 B TW508617 B TW 508617B
- Authority
- TW
- Taiwan
- Prior art keywords
- cooling
- heating
- plasma processing
- processing chamber
- patent application
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 219
- 238000001816 cooling Methods 0.000 claims abstract description 238
- 238000010438 heat treatment Methods 0.000 claims abstract description 213
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 230000002079 cooperative effect Effects 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000004132 cross linking Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 229920001971 elastomer Polymers 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 22
- 230000008901 benefit Effects 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 16
- 238000005530 etching Methods 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000110 cooling liquid Substances 0.000 description 4
- 229920002379 silicone rubber Polymers 0.000 description 4
- 239000004945 silicone rubber Substances 0.000 description 4
- 230000001976 improved effect Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 230000008093 supporting effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16549699P | 1999-11-15 | 1999-11-15 | |
| US09/439,675 US6302966B1 (en) | 1999-11-15 | 1999-11-15 | Temperature control system for plasma processing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW508617B true TW508617B (en) | 2002-11-01 |
Family
ID=26861442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089124208A TW508617B (en) | 1999-11-15 | 2000-11-15 | Temperature control system for plasma processing apparatus |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20020007795A1 (enExample) |
| EP (1) | EP1230663A1 (enExample) |
| JP (1) | JP4776130B2 (enExample) |
| KR (1) | KR100787848B1 (enExample) |
| CN (1) | CN1251294C (enExample) |
| AU (1) | AU1490301A (enExample) |
| TW (1) | TW508617B (enExample) |
| WO (1) | WO2001037316A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI574138B (zh) * | 2011-11-15 | 2017-03-11 | 東京威力科創股份有限公司 | 溫度控制系統、半導體製造裝置及溫度控制方法 |
| TWI585817B (zh) * | 2014-11-12 | 2017-06-01 | Advanced Micro-Fabrication Equipment Inc | Inductive coupling type plasma processing device |
| TWI601452B (zh) * | 2010-10-19 | 2017-10-01 | 應用材料股份有限公司 | 腔室蓋加熱環組件 |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6991684B2 (en) * | 2000-09-29 | 2006-01-31 | Tokyo Electron Limited | Heat-treating apparatus and heat-treating method |
| US6810832B2 (en) | 2002-09-18 | 2004-11-02 | Kairos, L.L.C. | Automated animal house |
| KR100549529B1 (ko) * | 2003-12-26 | 2006-02-03 | 삼성전자주식회사 | 반도체제조장치 |
| JP4361811B2 (ja) * | 2004-01-09 | 2009-11-11 | 東京エレクトロン株式会社 | 半導体製造装置 |
| US7358192B2 (en) * | 2004-04-08 | 2008-04-15 | Applied Materials, Inc. | Method and apparatus for in-situ film stack processing |
| US7651583B2 (en) * | 2004-06-04 | 2010-01-26 | Tokyo Electron Limited | Processing system and method for treating a substrate |
| US20060000551A1 (en) * | 2004-06-30 | 2006-01-05 | Saldana Miguel A | Methods and apparatus for optimal temperature control in a plasma processing system |
| US7780791B2 (en) * | 2004-06-30 | 2010-08-24 | Lam Research Corporation | Apparatus for an optimized plasma chamber top piece |
| US8540843B2 (en) | 2004-06-30 | 2013-09-24 | Lam Research Corporation | Plasma chamber top piece assembly |
| JP4615335B2 (ja) * | 2005-03-11 | 2011-01-19 | 東京エレクトロン株式会社 | 温度制御システム及び基板処理装置 |
| JP2008244224A (ja) * | 2007-03-28 | 2008-10-09 | Sumitomo Precision Prod Co Ltd | プラズマ処理装置 |
| KR101116972B1 (ko) * | 2007-12-27 | 2012-03-14 | 샤프 가부시키가이샤 | 플라즈마 처리 장치, 플라즈마 처리 장치용 가열 장치 및 플라즈마 처리 방법 |
| JP2010016225A (ja) * | 2008-07-04 | 2010-01-21 | Tokyo Electron Ltd | 温度調節機構および温度調節機構を用いた半導体製造装置 |
| JP4611409B2 (ja) * | 2008-09-03 | 2011-01-12 | 晃俊 沖野 | プラズマ温度制御装置 |
| JP5430192B2 (ja) * | 2009-03-19 | 2014-02-26 | 東京エレクトロン株式会社 | 温度調節装置、温度調節方法、基板処理装置及び対向電極 |
| DE212010000009U1 (de) | 2009-09-10 | 2011-05-26 | LAM RESEARCH CORPORATION (Delaware Corporation), California | Auswechselbare obere Kammerteile einer Plasmaverarbeitungsvorrichtung |
| US20130220975A1 (en) * | 2012-02-27 | 2013-08-29 | Rajinder Dhindsa | Hybrid plasma processing systems |
| JP2014067841A (ja) * | 2012-09-26 | 2014-04-17 | Spp Technologies Co Ltd | チャンバの加熱構造 |
| KR102052074B1 (ko) | 2013-04-04 | 2019-12-05 | 삼성디스플레이 주식회사 | 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법 |
| CN104717817A (zh) * | 2013-12-12 | 2015-06-17 | 中微半导体设备(上海)有限公司 | 一种用于电感耦合型等离子处理器射频窗口的加热装置 |
| CN108024436A (zh) * | 2016-11-01 | 2018-05-11 | 中微半导体设备(上海)有限公司 | 一种等离子体处理装置 |
| KR102524258B1 (ko) * | 2018-06-18 | 2023-04-21 | 삼성전자주식회사 | 온도 조절 유닛, 온도 측정 유닛 및 이들을 포함하는 플라즈마 처리 장치 |
| CN110660707B (zh) * | 2018-06-29 | 2022-06-14 | 台湾积体电路制造股份有限公司 | 电浆产生系统及温度调节方法 |
| US11424107B2 (en) | 2018-06-29 | 2022-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Temperature-controlled plasma generation system |
| US11264252B2 (en) * | 2018-10-12 | 2022-03-01 | Applied Materials, Inc. | Chamber lid with integrated heater |
| KR102645259B1 (ko) * | 2019-06-07 | 2024-03-11 | 주식회사 케이씨텍 | 기판 처리 장치 |
| CN112242318A (zh) * | 2019-07-16 | 2021-01-19 | Asm Ip私人控股有限公司 | 基板处理装置 |
| CN112342526A (zh) * | 2019-08-09 | 2021-02-09 | Asm Ip私人控股有限公司 | 包括冷却装置的加热器组件及其使用方法 |
| TWI729945B (zh) * | 2020-10-06 | 2021-06-01 | 天虹科技股份有限公司 | 在粉末上形成薄膜的原子層沉積裝置 |
| CN112750676B (zh) * | 2020-11-24 | 2022-07-08 | 乐金显示光电科技(中国)有限公司 | 一种等离子体处理装置 |
| CN116844991B (zh) * | 2022-03-23 | 2025-09-02 | 无锡华瑛微电子技术有限公司 | 半导体处理装置、半导体处理系统和半导体边缘定位方法 |
| KR102825248B1 (ko) * | 2023-05-17 | 2025-06-26 | 주식회사 위트코퍼레이션 | 자체적으로 온도 모니터링 가능한 엣지링 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6024826A (en) * | 1996-05-13 | 2000-02-15 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US6063233A (en) * | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6036877A (en) * | 1991-06-27 | 2000-03-14 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US5616264A (en) * | 1993-06-15 | 1997-04-01 | Tokyo Electron Limited | Method and apparatus for controlling temperature in rapid heat treatment system |
| JP3061346B2 (ja) * | 1994-03-07 | 2000-07-10 | 東京エレクトロン株式会社 | 処理装置 |
| TW279240B (en) * | 1995-08-30 | 1996-06-21 | Applied Materials Inc | Parallel-plate icp source/rf bias electrode head |
| US6170428B1 (en) * | 1996-07-15 | 2001-01-09 | Applied Materials, Inc. | Symmetric tunable inductively coupled HDP-CVD reactor |
| JPH11135296A (ja) * | 1997-07-14 | 1999-05-21 | Applied Materials Inc | マルチモードアクセスを有する真空処理チャンバ |
-
2000
- 2000-11-14 CN CNB008184062A patent/CN1251294C/zh not_active Expired - Lifetime
- 2000-11-14 WO PCT/US2000/031411 patent/WO2001037316A1/en not_active Ceased
- 2000-11-14 AU AU14903/01A patent/AU1490301A/en not_active Abandoned
- 2000-11-14 KR KR1020027006165A patent/KR100787848B1/ko not_active Expired - Lifetime
- 2000-11-14 EP EP00977234A patent/EP1230663A1/en not_active Withdrawn
- 2000-11-14 JP JP2001537772A patent/JP4776130B2/ja not_active Expired - Lifetime
- 2000-11-15 TW TW089124208A patent/TW508617B/zh not_active IP Right Cessation
-
2001
- 2001-08-30 US US09/943,806 patent/US20020007795A1/en not_active Abandoned
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI601452B (zh) * | 2010-10-19 | 2017-10-01 | 應用材料股份有限公司 | 腔室蓋加熱環組件 |
| US10595365B2 (en) | 2010-10-19 | 2020-03-17 | Applied Materials, Inc. | Chamber lid heater ring assembly |
| TWI574138B (zh) * | 2011-11-15 | 2017-03-11 | 東京威力科創股份有限公司 | 溫度控制系統、半導體製造裝置及溫度控制方法 |
| TWI585817B (zh) * | 2014-11-12 | 2017-06-01 | Advanced Micro-Fabrication Equipment Inc | Inductive coupling type plasma processing device |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1230663A1 (en) | 2002-08-14 |
| WO2001037316A1 (en) | 2001-05-25 |
| JP4776130B2 (ja) | 2011-09-21 |
| AU1490301A (en) | 2001-05-30 |
| JP2003514390A (ja) | 2003-04-15 |
| KR100787848B1 (ko) | 2007-12-27 |
| CN1423826A (zh) | 2003-06-11 |
| US20020007795A1 (en) | 2002-01-24 |
| CN1251294C (zh) | 2006-04-12 |
| KR20020060971A (ko) | 2002-07-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |