TW501069B - Method of operating capacitive thin film transistor arrays - Google Patents

Method of operating capacitive thin film transistor arrays Download PDF

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Publication number
TW501069B
TW501069B TW089115927A TW89115927A TW501069B TW 501069 B TW501069 B TW 501069B TW 089115927 A TW089115927 A TW 089115927A TW 89115927 A TW89115927 A TW 89115927A TW 501069 B TW501069 B TW 501069B
Authority
TW
Taiwan
Prior art keywords
array
charge
capacitor
tft
capacitors
Prior art date
Application number
TW089115927A
Other languages
English (en)
Chinese (zh)
Inventor
Michael Gillis Kane
Hongjin Kim
Original Assignee
Thomson Licensing Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Licensing Sa filed Critical Thomson Licensing Sa
Application granted granted Critical
Publication of TW501069B publication Critical patent/TW501069B/zh

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134336Matrix
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416Control or interface arrangements specially adapted for digitisers
    • G06F3/04166Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Human Computer Interaction (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Image Input (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
TW089115927A 1999-08-18 2000-08-08 Method of operating capacitive thin film transistor arrays TW501069B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37692599A 1999-08-18 1999-08-18

Publications (1)

Publication Number Publication Date
TW501069B true TW501069B (en) 2002-09-01

Family

ID=23487062

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089115927A TW501069B (en) 1999-08-18 2000-08-08 Method of operating capacitive thin film transistor arrays

Country Status (4)

Country Link
JP (1) JP4531219B2 (ja)
KR (1) KR100767648B1 (ja)
CN (1) CN1182484C (ja)
TW (1) TW501069B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100473383B1 (ko) * 2002-07-19 2005-03-10 매그나칩 반도체 유한회사 정전용량식 지문감지센서의 단위화소 및 그를 이용한지문감지장치
KR100943271B1 (ko) * 2003-05-06 2010-02-23 삼성전자주식회사 지문 인식신호 처리장치
JP3741282B2 (ja) * 2003-07-28 2006-02-01 セイコーエプソン株式会社 入力装置、電子機器及び入力装置の駆動方法
CN104408441A (zh) * 2014-12-10 2015-03-11 杨鹏飞 基于tft薄膜晶体管的指纹识别传感器及其测量方法
CN105989350B (zh) * 2015-03-05 2019-11-22 上海箩箕技术有限公司 像素单元、结构、结构阵列、读出电路及控制方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175446A (en) * 1991-02-14 1992-12-29 Thomson, S.A. Demultiplexer including a three-state gate
US5225959A (en) * 1991-10-15 1993-07-06 Xerox Corporation Capacitive tactile sensor array and method for sensing pressure with the array
JP3110980B2 (ja) * 1995-07-18 2000-11-20 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 液晶表示装置の駆動装置及び方法
GB9608747D0 (en) * 1996-04-26 1996-07-03 Philips Electronics Nv Fingerprint sensing devices and systems incorporating such
US5973658A (en) * 1996-12-10 1999-10-26 Lg Electronics, Inc. Liquid crystal display panel having a static electricity prevention circuit and a method of operating the same
GB9708559D0 (en) * 1997-04-29 1997-06-18 Philips Electronics Nv Fingerprint sensing devices and systems incorporating such

Also Published As

Publication number Publication date
KR100767648B1 (ko) 2007-10-17
CN1285568A (zh) 2001-02-28
JP4531219B2 (ja) 2010-08-25
CN1182484C (zh) 2004-12-29
KR20010050098A (ko) 2001-06-15
JP2001076130A (ja) 2001-03-23

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MM4A Annulment or lapse of patent due to non-payment of fees