TW500994B - Method and device for the measured delivery of low volumetric flows - Google Patents

Method and device for the measured delivery of low volumetric flows Download PDF

Info

Publication number
TW500994B
TW500994B TW090129036A TW90129036A TW500994B TW 500994 B TW500994 B TW 500994B TW 090129036 A TW090129036 A TW 090129036A TW 90129036 A TW90129036 A TW 90129036A TW 500994 B TW500994 B TW 500994B
Authority
TW
Taiwan
Prior art keywords
liquid
flow
pressure
tank
mass flow
Prior art date
Application number
TW090129036A
Other languages
English (en)
Inventor
Gerd Strauch
Markus Jakob
Johannes Lindner
Original Assignee
Aixtron Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Ag filed Critical Aixtron Ag
Application granted granted Critical
Publication of TW500994B publication Critical patent/TW500994B/zh

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Measuring Volume Flow (AREA)
  • Nozzles (AREA)
  • Flow Control (AREA)

Description

500994 五、發明說明（1) 本發明係有關一種計量輸出低液體體積流量之方法及裝 置，其將一氣流輸入一裝有一液體之槽中，而將該液體排 擠入’液體管路中。 專利W0 99/1 6929曾提出此種方法及裝置。其提出一LDS (Liquid precursor delivery system 液體先質輸送系統 )。此種裝置被使用於將一氣態成份輸入一CVD設備中。 該氣態成份例如被喷入且與一熱表面接觸而蒸發或直接由 液體與一熱表面接觸而蒸發。該處之液體流量經常低於1〇 ml/min。此種低體積流量之直接測量有困難❶此外，鐵電 材料氣相沈積於一半導體上時要求液體金屬有機鏍、鋇、 鈦、祕或钽化合物之設定及劑量為可重複。 本發明之目的因此在於改善此種方法及裝置。 本目的因申請專利範圍中之本發明而達成。依據申請專 利範圍第1項，一質流控制之氣流在基本上等於槽中氣壓 的恆定壓力下分成一分流，該分流被輸入槽中以排擠出液 體且進行質量流量測量，該分流質量流量可藉改變壓力而 被調整’使得以氣體密度計算出之體積流量等於液體體積 流量之理論值。本方法優先之進一步設計為，使分流至少 為本流的一百分之一。氣流最好在改變壓力時亦保持恆 定。在一優先進一步設計中，液體流尤其是以氣態被輸入 一 CVD反應器中。液體流可脈衝式喷入，如此而產生的 懸體可藉輸入熱而被蒸發。 ' 本裝置之進一步設計為設一氣體質流控制器以產生一恆 定氣流，藉一壓力調節器保持在一基本上等於槽中氣壓之
500994 五、發明說明（2) 恆定壓力下’使該氣流分成一分流’該分流經一具低流動 阻力之氣體質流测量器而流入槽中，一調節機構可藉改變 壓力調節器調節之壓力而設定流經氣體質流測量器之分流 的質量流量，使得其換算出之體積流量等於液體體積流量 之理論值。本裝置可優先使用於一 CVD設備以輸送一液態 反應劑。液體流可被輸送至一尤其是脈衝式的喷霧器喷 嘴。喷霧器噴嘴產生的氣懸體在蒸發後以氣態被輸送入一 CVD反應器之程序室中。 發明之詳細說明
管路13流出一氣流，例如氫或氮或另一惰性氣體，其流 入一氣體質流控制器2。由氣體質流控制器2流出的氣流 經過一分枝管路1 2而流入一壓力調節器！，該壓力 f 將分枝管路的壓力保持在一壓力ρι下。剩 俨σ 出管路流出壓力調節器卜 的氣體由-排 氣流被分枝管路12分成一較小的分流q2。 =:百分之-。氣流Q1大部份分成分
分流Q2流經一氣體質流測量器3。氣體質 動阻力較小，使得連接氣體質流測量器3並通到f二的/一 體管路11中存在一相同壓力P2，該壓力亦被J j曰的= 壓力調節器1保持恆定。 枝B路1 2的 槽4中氣體5的壓力因此被壓力調節器丨保持恆〜 槽4中裝有一液體6。一虹吸管1〇伸入液體6疋。 -在槽外部的噴霧器噴嘴i喷霧器喷嘴9可脈衝^工通作到
五、發明說明（3) :it:氣？體。由喷霧器喷嘴9喷出的氣懸體在程序室8 人物。^Iί輸入熱而被蒸發。該液體可是一金屬有機化 = θ室以用於在半導體表面沈積出鐵電層為優先。 值作\榦1 =節機構7，其使用氣體f流測量器3的測量 法旦二二鏈I。依據槽4中氣鳢5的密度可由測得的質量 ΐί液S量。調節機構7調節體積流量Q2，使其 ίίί 置的理論值。為此藉改變壓力調節器1的 _二ί定壓力P1，使得流經氣體質流測量器3的氣體 制二m4於液體體積流量卯的理論值。流經氣體質流控 鄕益上土》上為恆疋的質量流量Q1必要時可被調節機構影 γ。、調節機構γ亦可控制喷霧器喷嘴9。喷霧器喷嘴9可 縯或脈衝式工作。 本方法之基本出發點為，在相同溫度下視氣體管路11與 氣體質流測量器3的幾何關係而定，分流Q2測得的質量流 置與其體積流量間存在一明顯關係。 ⑽如液體體積流量q3需改變，則調節裝置7改變壓力調節 器1設定值，直至氣體質流測量器3測得的氣體質量流量以 壓力Ρ2下氣體5密度計算等於體積流量q3。 所有揭示特徵本身皆具有發明性質。本發明揭示之特徵 完全包含於本案之申請專利範圍中。 ’ 元件編號說明 1 壓力調節器 2 氣體質流控制器 3 氣體質流測量器 C:\2D-CODE\91-02\90129036.ptd 第6頁 500994 五、發明說明（4) 4 槽 5 氣體 6 液體 7 調節機構 8 程序室 9 喷霧器喷嘴 10 虹吸管 11 氣體管路 12 分枝管路 13 管路 14 排出管路 PI, P2 壓力 Q1 氣流 Q2 分流 Q3 液體流 Q4 分流
BIB C:\2D-00DE\91-02\90129036.ptd 第7頁 500994
C:\2D-00DE\91-02\90129036.ptd 第8頁

Claims (1)

  1. 500994 六、申請專利範圍 1 · 一種計量輸出低液體體積流量之方法，其將一氣流輸 入一裝有一液體之槽中，而將該液體排擠入一液體管路 中’其特徵為，一質流控制之氣流（QD在基本上等於槽 (4)中氣壓（P2)的恆定壓力（P1)下分成一分流（Q2),該分 流被輸入槽中以排擠出液體且進行質量流量測量（3),該 分流質量流量可藉改變壓力（P1)而被調整，使得以氣體密 度（Q1)計算出之體積流量等於液體體積流量（Q3)之理論 2·如申請專利範圍第1項之方法，其中分流（Q2)至少為 本流（Q1)的一百分之一。 3·如申請專利範圍第1項之方法，其中氣流（Q1)在改變 壓力時基本ϋ持恆定。 4·如申第1項之方法’其中液體流尤其是以 氣態被輸應器(8)中。 5·如申請圍第1項之方法，其中液體流（Q3)尤其 是脈衝式噴入，如此而產生的氣懸體藉輸入熱而被蒸發。 6· —種計量輸出低液體體積流量之裝置，其將一氣流輸 入一裝有一液體之槽中，而將該液體排擠入一液體管路 中’其特徵為，設一氣體質流控制器（2)以產生一恆定氣 流（Q1) ’藉一壓力調節器（1)保持在一基本上等於槽（4)中 氣壓（P2)之恆定壓力（pi)下，使該氣流分成一分流（Q2)， 該分流經一具低流動阻力之氣體質流測量器（3 )而流入槽 (4)中’一調節機構（7)可藉改變壓力調節器（1)調節之壓 力（P1)而設定流經氣體質流測量器（3)之分流的質量流
    C:\2D-00DE\9M)2\90129036.ptd 第9頁 500994 六、申請專利範圍 量，使得其換算出之體積流量等於液體體積流量（Q3)之理 論值。 ， 7. —種計量輸出低液體體積流量之裝置，其特徵為，可 使用於一CVD設備以輸送一液態反應劑。 8. —種計量輸出低液體體積流量之裝置，其特徵為，液 體流被輸送至一尤其是脈衝式的喷霧器喷嘴（9 )。 9. 一種計量輸出低液體體積流量之裝置，其特徵為，喷 霧器喷嘴（9 )產生的氣懸體藉輸入熱而蒸發並被輸送入一 CVD反應器之程序室中。
    η I
    C:\2D-C0DE\91.02\90129036.ptd 第10頁
TW090129036A 2000-11-30 2001-11-23 Method and device for the measured delivery of low volumetric flows TW500994B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10059386A DE10059386A1 (de) 2000-11-30 2000-11-30 Verfahren und Vorrichtung zur dosierten Abgabe kleiner Flüssigkeitsvolumenströme

Publications (1)

Publication Number Publication Date
TW500994B true TW500994B (en) 2002-09-01

Family

ID=7665191

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090129036A TW500994B (en) 2000-11-30 2001-11-23 Method and device for the measured delivery of low volumetric flows

Country Status (8)

Country Link
US (1) US20040035202A1 (zh)
EP (1) EP1358364B1 (zh)
JP (1) JP2004514997A (zh)
KR (1) KR20030059263A (zh)
AU (1) AU2002227920A1 (zh)
DE (2) DE10059386A1 (zh)
TW (1) TW500994B (zh)
WO (1) WO2002044441A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418963B (zh) * 2006-06-02 2013-12-11 Applied Materials Inc 應用壓差測量的氣體流調控
TWI616606B (zh) * 2015-11-23 2018-03-01 Ｓｍｓ集團有限公司 體積流調節閥與導索器

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7253084B2 (en) * 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
JP5690498B2 (ja) * 2009-03-27 2015-03-25 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 基体上に膜を堆積する方法および気化前駆体化合物を送達する装置
GB2557670B (en) * 2016-12-15 2020-04-15 Thermo Fisher Scient Bremen Gmbh Improved gas flow control
US11459654B2 (en) 2020-11-19 2022-10-04 Eugenus, Inc. Liquid precursor injection for thin film deposition
CN115505899A (zh) * 2022-08-16 2022-12-23 湖南顶立科技有限公司 一种沉积设备的工艺气源输入装置及其使用方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5934420B2 (ja) * 1980-05-20 1984-08-22 ジエイ・シ−・シユ−マ−カ−・カンパニ− 化学蒸気分配システム
US4754737A (en) * 1984-05-08 1988-07-05 Mitsubishi Jidosha Kogyo Kabushiki Kaisha Fuel injection pump device and method for settling the same
CH672850A5 (zh) * 1986-07-25 1989-12-29 Jakob Dr Nat Oec Rothenberger
US4990061A (en) * 1987-11-03 1991-02-05 Fowler Elton D Fluid controlled gas lift pump
JPH0769315B2 (ja) * 1992-04-06 1995-07-26 株式会社島津製作所 ガスクロマトグラフ装置
JP2703694B2 (ja) * 1992-05-28 1998-01-26 信越半導体株式会社 ガス供給装置
JPH06295862A (ja) * 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
US5399388A (en) * 1994-02-28 1995-03-21 The United States Of America As Represented By The Secretary Of The Navy Method of forming thin films on substrates at low temperatures
JP2996101B2 (ja) * 1994-08-05 1999-12-27 信越半導体株式会社 液体原料ガスの供給方法および装置
US6135433A (en) * 1998-02-27 2000-10-24 Air Liquide America Corporation Continuous gas saturation system and method
US6406545B2 (en) * 1999-07-27 2002-06-18 Kabushiki Kaisha Toshiba Semiconductor workpiece processing apparatus and method
US6591850B2 (en) * 2001-06-29 2003-07-15 Applied Materials, Inc. Method and apparatus for fluid flow control

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418963B (zh) * 2006-06-02 2013-12-11 Applied Materials Inc 應用壓差測量的氣體流調控
TWI616606B (zh) * 2015-11-23 2018-03-01 Ｓｍｓ集團有限公司 體積流調節閥與導索器

Also Published As

Publication number Publication date
US20040035202A1 (en) 2004-02-26
AU2002227920A1 (en) 2002-06-11
WO2002044441A3 (de) 2003-09-12
EP1358364B1 (de) 2004-07-21
DE10059386A1 (de) 2002-06-13
KR20030059263A (ko) 2003-07-07
JP2004514997A (ja) 2004-05-20
EP1358364A2 (de) 2003-11-05
WO2002044441A2 (de) 2002-06-06
DE50102949D1 (de) 2004-08-26

Similar Documents

Publication Publication Date Title
JP5949586B2 (ja) 原料ガス供給装置、成膜装置、原料の供給方法及び記憶媒体
CN105316657B (zh) 用于蒸气输送的系统和方法
KR101483472B1 (ko) 원료의 기화 공급장치
JP2016035103A5 (zh)
TWI525734B (zh) And a raw material gas supply device for a semiconductor manufacturing apparatus
US10267768B2 (en) Device and method for determining the concentration of a vapor by means of an oscillating body sensor
JP5652960B2 (ja) 原料気化供給装置
CN106661719B (zh) 用于为cvd或者pvd装置产生蒸气的设备和方法
JP2008240153A (ja) 前駆体用の供給装置
CN104822858A (zh) 原料气化供给装置
TW500994B (en) Method and device for the measured delivery of low volumetric flows
KR20030074663A (ko) 압력기반형 질량유량제어기 시스템
CN103797563A (zh) 具备原料浓度检测结构的原料气化供给装置
WO2004073849A2 (en) Sub-atmospheric pressure delivery of liquids, solids and low vapor pressure gases
JP2012234860A5 (zh)
TWI568872B (zh) 蒸鍍裝置
JP2019505036A (ja) 流体制御システム
JP3200464B2 (ja) 液体材料気化供給装置
JPH05305228A (ja) 定量気化供給装置
JP4044810B2 (ja) 表面処理用ガス供給装置
JP2003013233A (ja) 液体原料気化供給装置
KR100709035B1 (ko) 박막증착장치용 직접액체분사시스템
JPS59185772A (ja) 高融点金属化合物における蒸発ガスの流量制御装置
JPH05192501A (ja) 液体材料気化供給装置
KR20230017145A (ko) 공정 챔버로의 전구체 전달을 모니터링하는 시스템 및 방법

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent