TW499497B - Organocopper precursors for chemical vapor deposition and a method of depositing copper on a substrate using said precursors - Google Patents
Organocopper precursors for chemical vapor deposition and a method of depositing copper on a substrate using said precursors Download PDFInfo
- Publication number
- TW499497B TW499497B TW088115303A TW88115303A TW499497B TW 499497 B TW499497 B TW 499497B TW 088115303 A TW088115303 A TW 088115303A TW 88115303 A TW88115303 A TW 88115303A TW 499497 B TW499497 B TW 499497B
- Authority
- TW
- Taiwan
- Prior art keywords
- precursor
- copper
- alkyl
- scope
- patent application
- Prior art date
Links
- 239000010949 copper Substances 0.000 title claims abstract description 81
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 59
- 239000002243 precursor Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 title claims description 31
- 238000000151 deposition Methods 0.000 title claims description 25
- 238000005229 chemical vapour deposition Methods 0.000 title description 16
- 125000003118 aryl group Chemical group 0.000 claims abstract description 41
- 239000003446 ligand Substances 0.000 claims abstract description 24
- 230000007935 neutral effect Effects 0.000 claims abstract description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 13
- 239000007787 solid Substances 0.000 claims abstract description 11
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229930195735 unsaturated hydrocarbon Natural products 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 6
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims abstract description 5
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 25
- 230000008021 deposition Effects 0.000 claims description 20
- 239000012691 Cu precursor Substances 0.000 claims description 17
- 125000003545 alkoxy group Chemical group 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 11
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- ZOZNCAMOIPYYIK-UHFFFAOYSA-N 1-aminoethylideneazanium;acetate Chemical class CC(N)=N.CC(O)=O ZOZNCAMOIPYYIK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000654 additive Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 150000002431 hydrogen Chemical group 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- RYOGZVTWMZNTGL-UDRCNDPASA-N (1z,5z)-1,5-dimethylcycloocta-1,5-diene Chemical group C\C1=C\CC\C(C)=C/CC1 RYOGZVTWMZNTGL-UDRCNDPASA-N 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- ZDWYFWIBTZJGOR-UHFFFAOYSA-N bis(trimethylsilyl)acetylene Chemical group C[Si](C)(C)C#C[Si](C)(C)C ZDWYFWIBTZJGOR-UHFFFAOYSA-N 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims 8
- 125000005103 alkyl silyl group Chemical group 0.000 claims 6
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 6
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 6
- 239000000203 mixture Substances 0.000 claims 4
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims 2
- 238000013508 migration Methods 0.000 claims 2
- 230000005012 migration Effects 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims 1
- 230000002028 premature Effects 0.000 claims 1
- 239000004576 sand Substances 0.000 claims 1
- 238000002844 melting Methods 0.000 abstract description 6
- 230000008018 melting Effects 0.000 abstract description 5
- 150000004729 acetoacetic acid derivatives Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 12
- 239000011541 reaction mixture Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000005749 Copper compound Substances 0.000 description 6
- 150000001880 copper compounds Chemical class 0.000 description 6
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- -1 (hfac) CuL Chemical class 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- CYTQBVOFDCPGCX-UHFFFAOYSA-N trimethyl phosphite Chemical compound COP(OC)OC CYTQBVOFDCPGCX-UHFFFAOYSA-N 0.000 description 5
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical class CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 230000002079 cooperative effect Effects 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000706 filtrate Substances 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000004912 1,5-cyclooctadiene Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 101100242814 Caenorhabditis elegans parg-1 gene Proteins 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 239000012263 liquid product Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000012265 solid product Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- VYXHVRARDIDEHS-UHFFFAOYSA-N 1,5-cyclooctadiene Chemical compound C1CC=CCCC=C1 VYXHVRARDIDEHS-UHFFFAOYSA-N 0.000 description 1
- REDWSDBFBCDPNI-UHFFFAOYSA-N 1-trimethylsilylethanone Chemical compound CC(=O)[Si](C)(C)C REDWSDBFBCDPNI-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 101100496169 Arabidopsis thaliana CLH1 gene Proteins 0.000 description 1
- REIYHFWZISXFKU-UHFFFAOYSA-N Butyl acetoacetate Chemical compound CCCCOC(=O)CC(C)=O REIYHFWZISXFKU-UHFFFAOYSA-N 0.000 description 1
- 101150039077 CRCP gene Proteins 0.000 description 1
- YQAIETIFDJVYKK-UHFFFAOYSA-N C[Si](C)(C)C#C[Si](C)(C)C.[Cu] Chemical compound C[Si](C)(C)C#C[Si](C)(C)C.[Cu] YQAIETIFDJVYKK-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 description 1
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- 101100044057 Mesocricetus auratus SYCP3 gene Proteins 0.000 description 1
- 101100080600 Schizosaccharomyces pombe (strain 972 / ATCC 24843) nse6 gene Proteins 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- IBXLXQFYUKCVIO-UHFFFAOYSA-J [C+4].OC([O-])=O.OC([O-])=O.OC([O-])=O.OC([O-])=O Chemical compound [C+4].OC([O-])=O.OC([O-])=O.OC([O-])=O.OC([O-])=O IBXLXQFYUKCVIO-UHFFFAOYSA-J 0.000 description 1
- SXALEJCBZOWURL-UHFFFAOYSA-M [Na+].C(C)(=O)[O-].C(C)(=N)N Chemical class [Na+].C(C)(=O)[O-].C(C)(=N)N SXALEJCBZOWURL-UHFFFAOYSA-M 0.000 description 1
- AZKZHTCOSZOHBT-UHFFFAOYSA-N acetic acid 3,3-dimethylbutanamide Chemical compound C(C)(=O)O.C(C)(C)(C)CC(=O)N AZKZHTCOSZOHBT-UHFFFAOYSA-N 0.000 description 1
- WNFLYNFMVWRDEE-UHFFFAOYSA-N acetic acid;hexanamide Chemical compound CC(O)=O.CCCCCC(N)=O WNFLYNFMVWRDEE-UHFFFAOYSA-N 0.000 description 1
- 150000004075 acetic anhydrides Chemical class 0.000 description 1
- WDJHALXBUFZDSR-UHFFFAOYSA-M acetoacetate Chemical compound CC(=O)CC([O-])=O WDJHALXBUFZDSR-UHFFFAOYSA-M 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- XUPYJHCZDLZNFP-UHFFFAOYSA-N butyl butanoate Chemical group CCCCOC(=O)CCC XUPYJHCZDLZNFP-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- HYXXTUOWDIJLPS-UHFFFAOYSA-N copper;sulfane Chemical compound S.[Cu+2] HYXXTUOWDIJLPS-UHFFFAOYSA-N 0.000 description 1
- 101150111293 cor-1 gene Proteins 0.000 description 1
- 239000012043 crude product Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical class [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/06—Phosphorus compounds without P—C bonds
- C07F9/08—Esters of oxyacids of phosphorus
- C07F9/141—Esters of phosphorous acids
- C07F9/142—Esters of phosphorous acids with hydroxyalkyl compounds without further substituents on alkyl
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/08—Copper compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980032069A KR20000013302A (ko) | 1998-08-06 | 1998-08-06 | 화학 증착법을 위한 유기 구리 전구체 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW499497B true TW499497B (en) | 2002-08-21 |
Family
ID=19546633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088115303A TW499497B (en) | 1998-08-06 | 1999-09-03 | Organocopper precursors for chemical vapor deposition and a method of depositing copper on a substrate using said precursors |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6538147B1 (enExample) |
| EP (1) | EP1121474A2 (enExample) |
| JP (1) | JP2002522453A (enExample) |
| KR (2) | KR20000013302A (enExample) |
| TW (1) | TW499497B (enExample) |
| WO (1) | WO2000008225A2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10319454A1 (de) | 2003-04-29 | 2004-11-18 | Merck Patent Gmbh | Dikupfer(I)oxalat-Komplexe als Precursor zur metallischen Kupferabscheidung |
| US8030833B2 (en) * | 2003-09-19 | 2011-10-04 | The Board Of Trustees Of The University Of Illinois | Electron emission device incorporating free standing monocrystalline nanowires |
| US7344753B2 (en) * | 2003-09-19 | 2008-03-18 | The Board Of Trustees Of The University Of Illinois | Nanostructures including a metal |
| US7166732B2 (en) * | 2004-06-16 | 2007-01-23 | Advanced Technology Materials, Inc. | Copper (I) compounds useful as deposition precursors of copper thin films |
| US7034169B1 (en) | 2004-12-30 | 2006-04-25 | Air Products And Chemicals, Inc. | Volatile metal β-ketoiminate complexes |
| US7205422B2 (en) * | 2004-12-30 | 2007-04-17 | Air Products And Chemicals, Inc. | Volatile metal β-ketoiminate and metal β-diiminate complexes |
| WO2007142700A1 (en) * | 2006-06-02 | 2007-12-13 | Advanced Technology Materials, Inc. | Copper (i) amidinates and guanidinates for forming copper thin films |
| US20110060165A1 (en) * | 2006-12-05 | 2011-03-10 | Advanced Technology Materials, Inc. | Metal aminotroponiminates, bis-oxazolinates and guanidinates |
| US8263795B2 (en) * | 2007-11-05 | 2012-09-11 | Air Products And Chemicals, Inc. | Copper precursors for thin film deposition |
| DE102007058571B4 (de) | 2007-12-05 | 2012-02-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens |
| WO2014047544A1 (en) * | 2012-09-21 | 2014-03-27 | Wayne State University | Deposition of metal films based upon complementary reactions |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5098516A (en) * | 1990-12-31 | 1992-03-24 | Air Products And Chemicals, Inc. | Processes for the chemical vapor deposition of copper and etching of copper |
| AU662451B2 (en) | 1992-10-06 | 1995-08-31 | Walkerville Pty Ltd | Wood flooring system |
| US5441766A (en) * | 1994-08-25 | 1995-08-15 | Korea Institute Of Science And Technology | Method for the production of highly pure copper thin films by chemical vapor deposition |
| US5767301A (en) | 1997-01-21 | 1998-06-16 | Sharp Microelectronics Technology, Inc. | Precursor with (alkyloxy)(alkyl)-silylolefin ligand to deposit copper |
-
1998
- 1998-08-06 KR KR1019980032069A patent/KR20000013302A/ko not_active Abandoned
-
1999
- 1999-08-06 US US09/744,619 patent/US6538147B1/en not_active Expired - Fee Related
- 1999-08-06 JP JP2000563846A patent/JP2002522453A/ja active Pending
- 1999-08-06 EP EP99935166A patent/EP1121474A2/en not_active Withdrawn
- 1999-08-06 WO PCT/KR1999/000438 patent/WO2000008225A2/en not_active Ceased
- 1999-08-06 KR KR1020017001526A patent/KR100582619B1/ko not_active Expired - Fee Related
- 1999-09-03 TW TW088115303A patent/TW499497B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002522453A (ja) | 2002-07-23 |
| WO2000008225A2 (en) | 2000-02-17 |
| KR20010072258A (ko) | 2001-07-31 |
| US6538147B1 (en) | 2003-03-25 |
| EP1121474A2 (en) | 2001-08-08 |
| KR100582619B1 (ko) | 2006-05-23 |
| WO2000008225A3 (en) | 2000-05-11 |
| KR20000013302A (ko) | 2000-03-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5187300A (en) | Volatile precursors for copper CVD | |
| JP3593051B2 (ja) | 金属及び金属含有フィルムの堆積のための揮発性先駆物質 | |
| JP2612986B2 (ja) | 配位子で安定化された一価金属β−ジケトン配位錯体および金属薄膜の化学蒸着へのその利用 | |
| TW499497B (en) | Organocopper precursors for chemical vapor deposition and a method of depositing copper on a substrate using said precursors | |
| JP2021507124A (ja) | 金属含有膜の生成方法 | |
| WO2004050947A1 (ja) | ルテニウム化合物および金属ルテニウム膜の製造法 | |
| KR101215086B1 (ko) | 탄탈 화합물, 그 제조 방법, 탄탈 함유 박막 및 그 형성방법 | |
| JP4388604B2 (ja) | 金属銅の気相での化学的被着のための、新しい銅（▲ｉ▼）前駆物質 | |
| KR100246155B1 (ko) | 알루미늄 화학 증착법을 위한 새로운 아마이도 알란 전구체 | |
| JP2007246513A (ja) | タンタル化合物とその製造方法、及びそれを原料とするタンタル含有薄膜とその形成方法 | |
| JP2007526250A (ja) | 核形成密度が高い有機金属化合物 | |
| JP7709172B2 (ja) | 金属又は半金属含有フィルムの製造方法 | |
| JP4125728B2 (ja) | 一価銅錯体 | |
| Maudez et al. | New dimethyl (norbornadienyl) platinum (II) precursors for platinum MOCVD | |
| JP3282392B2 (ja) | 蒸気圧の高い有機金属化学蒸着による銅薄膜形成用有機銅化合物 | |
| TWI875599B (zh) | 藉由不可芳香化的環狀二烯釕（０）錯合物沈積含釕膜 | |
| JP7768506B2 (ja) | 金属又は半金属含有フィルムの生成方法 | |
| JP2021525832A (ja) | 金属または半金属含有フィルムの製造方法 | |
| JPH0853470A (ja) | 蒸気圧の高い有機金属化学蒸着による銀薄膜形成用有機銀化合物 | |
| JP2768250B2 (ja) | 蒸気圧の高い有機金属化学蒸着による銀薄膜形成用有機銀化合物 | |
| KR100600468B1 (ko) | 시클로알켄 구리 전구체의 제조방법 | |
| JPH1018036A (ja) | 高純度白金薄膜の形成方法 | |
| CN101139365A (zh) | 有机金属化合物 | |
| JP2003261499A (ja) | 銅錯体及び該錯体を含む混合物並びにそれを用いて作製された銅薄膜 | |
| JP2000265273A (ja) | 有機金属化学蒸着用の銅薄膜形成用溶液原料及びこれから作られた銅薄膜 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |