JP2002522453A - 化学蒸着のための有機銅前駆体 - Google Patents

化学蒸着のための有機銅前駆体

Info

Publication number
JP2002522453A
JP2002522453A JP2000563846A JP2000563846A JP2002522453A JP 2002522453 A JP2002522453 A JP 2002522453A JP 2000563846 A JP2000563846 A JP 2000563846A JP 2000563846 A JP2000563846 A JP 2000563846A JP 2002522453 A JP2002522453 A JP 2002522453A
Authority
JP
Japan
Prior art keywords
group
copper
alkyl
precursor
aryl group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000563846A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002522453A5 (enExample
Inventor
ヒュンソー チョイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of JP2002522453A publication Critical patent/JP2002522453A/ja
Publication of JP2002522453A5 publication Critical patent/JP2002522453A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/06—Phosphorus compounds without P—C bonds
    • C07F9/08—Esters of oxyacids of phosphorus
    • C07F9/141—Esters of phosphorous acids
    • C07F9/142—Esters of phosphorous acids with hydroxyalkyl compounds without further substituents on alkyl
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2000563846A 1998-08-06 1999-08-06 化学蒸着のための有機銅前駆体 Pending JP2002522453A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1998/32069 1998-08-06
KR1019980032069A KR20000013302A (ko) 1998-08-06 1998-08-06 화학 증착법을 위한 유기 구리 전구체
PCT/KR1999/000438 WO2000008225A2 (en) 1998-08-06 1999-08-06 Organocopper precursors for chemical vapor deposition

Publications (2)

Publication Number Publication Date
JP2002522453A true JP2002522453A (ja) 2002-07-23
JP2002522453A5 JP2002522453A5 (enExample) 2005-12-22

Family

ID=19546633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000563846A Pending JP2002522453A (ja) 1998-08-06 1999-08-06 化学蒸着のための有機銅前駆体

Country Status (6)

Country Link
US (1) US6538147B1 (enExample)
EP (1) EP1121474A2 (enExample)
JP (1) JP2002522453A (enExample)
KR (2) KR20000013302A (enExample)
TW (1) TW499497B (enExample)
WO (1) WO2000008225A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006524644A (ja) * 2003-04-29 2006-11-02 ビーエーエスエフ　アクチェンゲゼルシャフト 金属銅析出のための前駆物質としてのシュウ酸二銅（ｉ）錯体

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8030833B2 (en) 2003-09-19 2011-10-04 The Board Of Trustees Of The University Of Illinois Electron emission device incorporating free standing monocrystalline nanowires
US7344753B2 (en) * 2003-09-19 2008-03-18 The Board Of Trustees Of The University Of Illinois Nanostructures including a metal
US7166732B2 (en) * 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
US7034169B1 (en) 2004-12-30 2006-04-25 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate complexes
US7205422B2 (en) * 2004-12-30 2007-04-17 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate and metal β-diiminate complexes
WO2007142700A1 (en) * 2006-06-02 2007-12-13 Advanced Technology Materials, Inc. Copper (i) amidinates and guanidinates for forming copper thin films
TW200825200A (en) * 2006-12-05 2008-06-16 Advanced Tech Materials Metal aminotroponiminates, bis-oxazolinates and guanidinates
US8263795B2 (en) * 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition
DE102007058571B4 (de) 2007-12-05 2012-02-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens
US9540730B2 (en) 2012-09-21 2017-01-10 Wayne State University Deposition of metal films based upon complementary reactions

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5098516A (en) * 1990-12-31 1992-03-24 Air Products And Chemicals, Inc. Processes for the chemical vapor deposition of copper and etching of copper
AU662451B2 (en) 1992-10-06 1995-08-31 Walkerville Pty Ltd Wood flooring system
US5441766A (en) * 1994-08-25 1995-08-15 Korea Institute Of Science And Technology Method for the production of highly pure copper thin films by chemical vapor deposition
US5767301A (en) 1997-01-21 1998-06-16 Sharp Microelectronics Technology, Inc. Precursor with (alkyloxy)(alkyl)-silylolefin ligand to deposit copper

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006524644A (ja) * 2003-04-29 2006-11-02 ビーエーエスエフ　アクチェンゲゼルシャフト 金属銅析出のための前駆物質としてのシュウ酸二銅（ｉ）錯体

Also Published As

Publication number Publication date
EP1121474A2 (en) 2001-08-08
KR20010072258A (ko) 2001-07-31
TW499497B (en) 2002-08-21
KR20000013302A (ko) 2000-03-06
KR100582619B1 (ko) 2006-05-23
WO2000008225A2 (en) 2000-02-17
WO2000008225A3 (en) 2000-05-11
US6538147B1 (en) 2003-03-25

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