TW476807B - CVD film formation apparatus - Google Patents

CVD film formation apparatus Download PDF

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Publication number
TW476807B
TW476807B TW088102534A TW88102534A TW476807B TW 476807 B TW476807 B TW 476807B TW 088102534 A TW088102534 A TW 088102534A TW 88102534 A TW88102534 A TW 88102534A TW 476807 B TW476807 B TW 476807B
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TW
Taiwan
Prior art keywords
plasma
space
film
partition wall
wall plate
Prior art date
Application number
TW088102534A
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English (en)
Inventor
Hiroshi Nogami
Original Assignee
Anelva Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)

Description

476807 A7 B7 五、發明説明（1 ) 【發明所屬之技術領域】 本發明係關於一種CVD成膜裝置，尤其是一種利用電漿 的CVD裝置，且關於適合對大型之平面型基板予以成膜的 CVD成膜裝置。 【習知技術】 作為大型的液晶顯示器之製作方法，習知為人所週知者 有利用高溫多晶矽型TFT (薄膜電晶體）、及利用低溫多晶 矽（poly Si 1 icon)型TFT者。利用高溫多晶矽型TFT之製作 方法，由於可獲得高品質的氧化膜及多晶矽的氧化膜界面， 所Κ可使用耐高溫1000 °CK上的石英基板。相對於此在低 溫多晶矽型TFT之製作中，由於使用普通的TFT用玻璃基板 ，所以有在低溫環境（例如40 (TC )中進行成膜的必要。利 用低溫多晶矽型TFT製作液晶顯示器的方法，由於沒有使 用特別的基板之必要，所以近年來已被實用化，且其生產 量也日漸擴大。 利用低溫多晶矽型TFT的液晶顯示器之製作，在低溫下 將適當的氧化矽膜予K成膜而當作閘絕緣膜的情況，可使 用C V D法。在利用該C V D法將氧化矽膜予Μ成膜之際，可使 用矽烷、四甲氧基矽烷（Μ下稱為TE0S)作為代表性的材料 氣體。 在使用TE0S作為材料氣體且利用CVD法將氧化矽膜予Μ 成膜的情況，若依據習知的電漿處理裝置，則會直接將材 料氣體供給至電襲寧理裝茸1隹—成J 11生、。材料氣體與 氧因激烈反應而在氣相中生成反應物。該反應物會造成缺 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ 297公釐） - 4 一 ----------^衣 JI (請先閲讀背面之注意事項再填寫本頁) 、1Τ 經濟部智慧財產局員工消費合作社印製 476807 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明 2 ) 1 陷 在 TFT元件ΐ *產生塵粒子。 因塵粒子之發生而有良率降 1 1 低 的 問 題 〇 再 者 因 電 漿 與 基 板 接 觸 而 存 在 於 基 板 中 9 所 以 1 1 I 因 射 入 高 能 源 的 離 子 9 而 使 該 離 子 射 入 於 氧 化 矽 膜 中 也 會 請 先 1 1 有 膜 特 性 惡 化 的 問 題 〇 閱 讀 皆 1 I 月 面 1 [ 發 明 所 欲 解 決 之 問 題 ] 之 1 注 1 很 早 Μ 前 為 了 解 決 上 逑 問 題 5 有 提 案 一 種 利 用 遶 距 離 電 意 事 項 1 漿 方 式 的 電 漿 處 理 裝 置 0 遠 距 離 電 漿 方 式 9 係 在 電 漿 處 理 再 填 寫 Φ 裝 置 内 生 成 電 漿 Μ 將 生 成 有 如 白 由 基 般 的 活 性 種 之 區 域 脫 本 頁 離 基 板 9 而 且 材 料 氣 體 可 供 給 至 基 板 之 配 置 區 域 的 附 近 〇 1 1 在 電 漿 區 域 所 生 成 的 g 由 基 會 朝 配 置 基 板 的 區 域 之 方 1 | 向 擴 散 ， 而 供 給 至 基 板 處 理 面 的 前 面 空 間 内 〇 若 依 據 遠 距 1 訂 離 電 漿 方 式 之 電 漿 處 理 裝 置 9 則 可 抑 制 電 漿 與 材 料 氣 體 之 1 激 烈 反 應 9 並 可 減 低 塵 粒 子 之 發 生 量 而 且 具 有 限 制 離 子 1 1 射 入 基 板 的 優 點 〇 1 然 而 ， 在 遠 距 離 電 漿 方 式 之 電 漿 處 理 裝 置 的 情 況 時 ， 電 1 艟 漿 生 成 jm» 域 和 基 板 配 置 區 域 係 透 過 連 接 空 間 而 Μ 離 形 成 〇 T I 將 離 開 基 板 之 處 所 生 成 的 白 由 基 通 趣 連 接 空 間 而 利 用 擴 散 1 1 作 用 供 給 至 基 板 上 〇 1 1 遠 距 離 電 漿 方 式 9 會 有 成 膜 速 度 變 低 9 在 基 板 之 表 面 近 1 1 旁 的 分 布 很 差 的 問 題 〇 尤 其 是 5 由 於 在 基 板 之 表 面 近 旁 的 J 分 布 很 差 9 所 以 有 無 法 對 應 大 型 液 晶 顯 示 器 中 所 使 用 之 大 1 1 面 積 基 板 的 問 題 〇 1 1 I 本 發 明 係 為 了 解 決 上 述 的 問 題 而 成 者 9 其 巨 的 係 在 於 提 1 1 供 種 Μ 利 用 低 溫 多 晶 矽 型 T F T之大型液晶顯示器的製作 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） - 5 - 476807 A7 B7 五、發明説明（3 ) ，在大面積基板上MCVD法使用如TE0S的材料氣體將氧化 矽膜予Μ成膜的情況時，可抑制塵粒子之發生，防止離子 射入基板，使基板近旁之電漿分布變佳，且在對大面積基 板進行成膜時可有效利用的CVD成膜裝置。 【解決問題之手段及作用】 有關本發明之CVD成膜裝置，係為了達成上述目的而如 Μ下所構成。 本發明之CVD成膜裝置，係在真空容器內生成電漿Μ使 活性種（自由基：radical)發生，且利用該活性種和材料 氣體（precursor gas)在基板上進行成膜處理的裝置。本 發明之CVD成膜裝置，設置形成有複數個孔之隔壁板用K 將真空容器之内部區分成電漿生成空間及成膜處理空間。 供給至真空容器內的材料氣體，係貫穿電漿生成空間和隔 壁板且通過分散而設的複數個導電性之通路而直接導入於 成膜處理空間內，而在電漿生成空間所生成的活性種，係 通過形成隔壁板上之複數個孔而導入於成膜處理空間内。 利用本發明之電漿的CVD成膜裝置，係避開電漿所生成的 區域，將材料氣體直接導入於基板前面之成膜處理空間内 。藉以防止在材料氣體與電漿之間發生激烈的化學反應， 且抑制塵粒子之發生。 形成於隔壁板上的孔，係在將孔a的反嫕氣體（氧氣）之 氣體流速設為u，將實質的孔畏度設為L，將相互氣體擴散 係數（亦即氧氣與材料氣體的相互擴散係數）設為D時，會 滿足u L / D > 1之條件。該條件係設定成當假設通過孔，使反 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 公釐） I ——I—-IΦΙΊ (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 6 476807 A7 B7 五、發明説明（4 ) 應氣體（氧氣）對流，而材料氣體因擴散而移動至各自相反 側時，就會藉由材料氣體之擴散而抑制移動量。 (請先閱讀背面之注意事項再填寫本頁) 隔壁部係連接在供給清潔用高頻電力的高頻供電部上。 適時地對隔壁部供給高頻電力K在成膜處理空間內生成清 潔用電漿。 在複數個通路之入口側，設置備有均等板的氣體貯氣筒 。在使導入於成膜處理空間内的材料氣體分散，且可將大 面積基板予K成膜下均勻化。 藉由在電漿生成空間之中間位置設置放電用電極，以在 該電極和形成電漿生成空間的隔壁板及上壁板之間生成電 漿。 藉由在電漿生成空間之上側位置設置放電用電極，以在 該電極和前述隔壁板之間生成電漿。 經濟部智慧財產局員工消費合作社印製 在上述CVD成膜裝置中所執行的成膜方法，係利用由電 漿所生成的活性種和材料氣體在基板上進行成膜處理的方 法。利用形成有複數個孔之隔壁板將真空容器之内部區分 成電漿生成空間及成膜處理空間，將供給至真空容器内的 材料氣體，直接導入於成膜處理空間内，將在電漿生成空 間由反應氣體所生成的活性種，通過形成於隔壁板上之複 數個孔而導入於成膜處理空間内。 隔壁板上所形成的複數個孔，係在將孔内的氣體流速設 為u，將實質的孔長度設為L，將相互氣體擴散係數設為D 時，會滿足u L / D > 1之條件。 較佳者為，對隔壁板供給高頻電力以在成膜處理空間内 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -7 - 476807 A7 B7 五、發明説明（5 ) 生成電漿，且適時地清潔成膜處理空間。 【發明之實施形態】 Μ下係根據附圖說明本發明之較佳的實施形態。 參照圖1至圖3說明有關本發明之CVD成膜裝置的第一實 施形態。在圖1中，該CVD成膜裝置，係使用TE0S當作材料 氣體，且在普通的TFT用玻璃基板11上面堆積氧化矽膜Μ 作為閘絕緣膜。CVD成膜裝置之容器12，係在進行成膜處 理之際，依排氣機構1 3使其內部保持於所希望之真空狀態 的真空容器。排氣機構13係連接在形成於真空容器12内的 排氣埠14上。真空容器12之內部空間，係依導電性構件所 製成的隔壁板1 5劃分成上側的電漿生成空間1 6和下側的成 膜處理空間1 7。玻璃基板1 1，係配置在設於成膜處理空間 17内的基板保持機構18上。玻璃基板11實質上與隔壁板15 平行，且將其成膜面配置成與隔壁板15之下面相對。基板 保持機構1 8係與真空容器1 2同電位，且保持於接地電位。 在基板保持機構18之內部設有加熱器20。玻璃基板11之溫 度可依該加熱器2 0而保持於一定溫度。 如圖示般，真空容器12之內部，可依隔壁板15區域性地 分成電漿生成空間16和成膜處理空間17。在隔壁板15上分 散設有貫穿隔壁板15的複數個孔22。電漿生成空間16和成 膜處理空間17係透過該等的複數孔2 2而聯繫。將孔22之截 面擴大而顯示於圖2上。有關滿足孔2 2的條件將於後述。 詳述真空容器12之構造。真空容器12從其容易組裝之觀 點來看係由形成電漿生成空間16的上容器12a、及形成電 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 一 8 一 I-----.——0J, (請先閱讀背面之注意事項再填寫本頁)
、1T 經濟部智慧財產局員工消費合作杜印製 476807 A7 B7 五、發明説明（6 ) 漿生成空間16的下容器12b所構成。當組合上容器12a和下 容器12bM製作真空容器12時，會在兩者之間夾住隔壁板 15及與之關聯的構件。藉由組裝該等的構件’就可形成電 漿生成空間16和成膜處理空間17。另一方面’可依隔壁板 15及與之關聯的構件、和上述上容器12a來形成電漿生成 空間16。如圖示般生成電漿23的區域，係由隔壁板15、由 導電性構件所製作的上壁板24、聯繫該等的複數個管構件 25、及配置於中央位置的電極26所形成。隔壁板15和上壁 板24，係位於平行的位置上，且由複數個管構件25所结合 且一體化。聯繫隔壁板15和上壁板24的複數個管構件25 ’ 係發揮用以通過材料氣體的通路功能。使上壁板2 4之上側 空間和隔壁板1 5之下側空間（即成膜處理空間1 7 )相連通。 管構件25係由導電性構件所形成，其外面係由陶瓷蓋27所 被覆。隔壁板15、電極26及上壁板24，係由沿著上容器 12a之側部內面而設的二個環狀絕緣構件28、29所支撐。 在環狀絕緣構件28上設有導入管30M將氧氣由外側導入於 成膜處理空間1 7内。導入管3 0，係透過進行流量控制的流 量控制器3 1而連接到氧氣供給源3 2上。 圖3係顯示電極部分的重要部位平面圖。在電極26上形 成有多數孔26a。在該等孔26a上配置有管構件25。 在上壁板24和上容器12a之頂部之間設有具備均等板33 的貯氣器（gas reservoir)。均等板33係均等形成複數個 孔的板材。在上容器12a之頂部設有導入材料氣體的導人 管34。可利用導入管34將材料氣體導入於真空容器12之貯 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） I--------^-I.J — (請先閲讀背面之注意事項再填寫本頁)
、1T 經濟部智慧財產局員工消費合作社印製 9 476807 A7 —^^ __^ 五、發明説明（7 ) 氣 器 内 〇 進而 在 上容器12a之頂部設有連接電極26的電力 導 入 棒 35 、和 連 接隔壁板15的電力導入 棒36 。可利用電力 導 入 棒 3 5供給 清 潔用高頻電力。電力導 入棒 35、36係各別 由 絕 緣 物 37 > 38所被覆，可謀求與其他 金屬 部分間的絕緣 說 明 如 上述 CVD成膜裝置的成膜方法、 >玻璃基板11可利 用 未 圖 示 的搬 蓮 機器人搬入於真空容器 12之 内部。並配置 於 基 板 保 持機 構 18之上。真空容器12之 内部 ，可依排氣機 構 13 進 行 排氣 及 減壓並保持於所希望的 真空 狀態。其次， 氧 氣 可 通 過導 入 管30導入於真空容器12之電 漿生成空間1 6 內 〇 此 時 氧氣 的 流量可由外部的流量控 制器 3 1來控制。使 用 式 子 ⑴ 及式 子 ⑵，從氧氣流量（Q 0 2 ) 、合成膜處理空間 側 的 壓 力 (P 0 2 ：)^ .及隔壁的溫度（T)中求 出氧 流量（u )。 C 數 學式 子 1 ] C 1 0 2 :=P c 1 2 u A......W F > 0 2 :=P c ,2RT/M......(2) 其中，i Q 〇 2 :氧氣之密度（k g / m 3 ) Μ ： 氧氣之分子量（0 2 = 32 ) Ί Γ ： 絕對溫度（k ) i \ : 隔壁板15上所形成的孔 22之 總截面積（nf ) X J : 流經孔22的氧氣流速（m/s) R ： 氣體常數（8. 314J/mol ♦ k X 10 一 3 ) 另 一 方 面， 作 為材料氣體（precursor gas ;)的T E 0 S可通 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 過導人管34導人於真空容器12之内部。TE0S ,最初係導入 於貯氣器內，且由均等板33所均等化，並通過複數個管構 本紙張尺度適用中國國家標準（CNS ) A4規格(210X297公釐) ^~Ϊ 〇 - 476807 A7 B7 ---------------- 五、發明説明（8 ) 件2 5直接導入於成膜處理空間1 7内。設於成膜處理空間1 7 内的基板保持機構18，由於可對加熱器20進行通電，所以 可預先保持於一定溫度。 可對電極26透過電力導入棒35供給高頻電力。依高頻電 力而產生放電，且在電漿生成空間16內於電極26之周圍生 成氧電漿23。藉由生成電漿23，可生成作為中性激勵種的 自由基（激勵活性種）。當將TE0S導入於真空容器12内時， TE0S不會直接接觸氧電漿23。而被導入的TE0S不會與氧電 漿起激烈反應。 本實施形態之C V D成膜裝置，係利用隔壁板1 5將真空容 器12之內部空間分成電漿生成空間16和成膜處理空間17。 CVD成膜装置，係對電漿生成空間16導入氧氣且對電極26 供給高頻電力K生成氧電漿23。另一方面，CVD成膜裝置 ，會直接對成膜處理空間17導入TE0S。 Μ貫穿狀態在隔壁板15上所形成的複數個孔22之形態， 係在假設電漿生成空間1 6中的氧氣和成膜處理空間1 7中的 TE0S，分別通過孔22而在相反側的空間內進行物質移動流 動及進行擴散移動時，可決定將其移動量限制在所希望範 圍內。亦即，將隔壁的溫度Τ及成膜處理空間側的壓力為 Ρ〇2時之氣體的相互氣體擴散係數設為D，而將如圖2所示 孔2 2之最小徑部分的長度（孔2 2之特徵長度）設為L時，使 用前述氧氣之流速，決定成滿足u L / D > 1的關係。 上述uL>l的關係可導出如下。例如關於移動管構件25的 氧與TE0S的關係而使用TE0S氣體密度（ρτ^ )和擴散流速 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -1 1 ~: I — -II — -I#JI (請先閲讀背面之注意事項再填寫本頁)
、1T 經濟部智慧財產局員工消費合作社印製 476807 A7 __B7_ . 五、發明説明（9 ) (u )和相互氣體擴散係數（D - Q 2 )成立以下的式子
(3)。當將貫穿孔之特激的長度設為L時，式子（3)就可近似 式子⑷。比較式子⑷的結果，可以-D - a2/L表示TE0S 之擴散流速（u )。因而，在將從上述之式之⑴和⑵中 所得的氧流速設為U，在將TE0S之擴散流速設為-D -02 /L的情況，該等二個流速的絕對值之比，即| -u/ (-D -02/L) I =uL/D- Q2之值係氧物質移動速度和TE0S擴 散速度之比，將該比uL/D - 02設為1以上，係意味著比 較於擴散之流量因對流所造成的流量很大之意。亦即，將 iiL/D - 02之值設為1以上，係意味著TE0S之擴散影響 很少之意。 〔數學式子2〕 P -r tr〇 U t to i —一D τΉί» — 〇2 ««···· (3) P u -re〇s ^ ~ D rt -02 P / L ......⑷ 電漿生成空間16和成膜處理空間17係由形成多數個具有 上逑條件之孔22的隔壁板15所劃分。具有上逑條件的孔22 很少接觸直接導入於成膜處理空間17内的TE0S和氧電漿。 具有上述條件的孔22係如習知裝置般用Μ防止TE0S與氧電 漿起激烈反應。 關於在電漿生成空間16中所產生的自由基，係在對玻璃 基板11進行CVD成膜中所需要的適量之自由基，利用擴散 通過於隔壁板15上所形成的孔22移動至成膜處理空間17内 。藉此TE0S可由自由基活性化，且在玻璃基板11的表面上 進行氧化膜（Si02)的成膜。 .本紙張尺度蟲窜丨板15之孔22的直徑設满 -12 - I L"I,---Φ — (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 476807 A7 B7 五、發明説明（10) -----I—-I (請先閲讀背面之注意事項再填寫本頁) 0.5πιπι，將孔22之總數表示1800個，將氧氣之氣體流量設 為500sccm(表示每Ot、1氣麗的體積流速（cc/min)。002=1 1 . 19 X 10 - 5 (kg/s))，將隔壁的溫度設為約200 °C，將成 膜處理空間1 7中的壓力設為1 0 0 P a，將直徑0 . 5 m m部分的長 度（L)設為3ιπιπ，將相互氣體擴散係數設為D = 0.0225iif/S時 ，就從 p〇2 = 8」4X1〇-4 (kg/m3 )，A = 3 . 53 x 10 ~ 4 (nf )變成u = 41.3(m/s)，接著uL/DTw - Q2之值為5·5。在該 種情況時，比較於TE0S之擴散移動則氧氣之對流移動為可 支配的。TE0S很少擴散至充滿氧電漿23的電漿生成空間16 内，結果就很少發生塵粒子。 經濟部智慧財產局員工消費合作社印製 其次說明成膜處理空間m清潔。若依據本實施形態之 CVD成膜裝置，則由於不在成膜處理空間17内充分擴散電 漿，所Μ會發生很難對成膜處理空間1 7進行清潔的問題。 將電力導入棒36電氣連接隔壁板15。藉由對隔壁板15供給 高頻電力就會在成膜處理空間17內生成例如NF3電漿。利 用被生成的電漿清潔成膜處理空間1 7的内部。對電力導入 棒3 6供給高頻電力而進行清潔的時間，係根據每一預先決 定的一定時間或是每一定的基板片數適時進行者。 其次參照圖4說明本發明之CVD成膜裝置的第二實施形態 。圖4中，與圖1中所說明之要素實質上相同的要素上附上 相同的元件編號，而在此省略反覆詳细說明。本實施形態 之特徵的構成，係減去前述之上壁板24，而在上部設置圓 板狀絕緣構件41，且在其下側配置電極26。依電極26和隔 壁板1 5形成平行平板型的電漿生成空間1 6。形成流過材料 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐） -13 - 476807 A7 B7 五、發明説明（11) (請先閲讀背面之注意事項再填寫本頁) 氣體之通路的多數管構件25，係設在絕緣構件41和隔壁板 1 5之間。其他的構成實質上與第一實施形態的構成相同。 再者，依第二實施形態之CVD成膜裝置所達成的作用、效 果也與前逑第一實施形態相同。 在前逑之實施形態中，雖說明使用TE0S作為材料氣體之 例子，但是並不限定此，當然也可使用其他的材料氣體。 本發明之原理思想，係可應用於藉由在電漿上接il材料氣 體K使塵粒子發生之情形、及朝基板射入離子之情形所造 成問題的全部處理上，且可應用於成膜、表面處理、等方 性蝕刻上。 【發明之效果】 從K上之說明中可明白若依據本發明，則可利用形成對 流移動滿足支配性條件的貫通孔之隔壁板劃分成電漿生成 空間和成膜處理空間。材料氣體並不會接觸電漿而會直接 導入於成膜處理空間內。可防止材料氣體和電漿之間的激 烈化學反應，结果，可抑制塵粒子之發生，且可防止對基 板射入離子。 經濟部智慧財產局員工消費合作社印製 對成膜處理空間直接導入材料氣體用的通路設有複數個 ，且在通路之上游側設有具備均等板的貯氣器。可在成膜 處理空間内均等導入材料氣體，且自由基也可利用隔壁板 上所形成的多數孔均等導入於成膜處理空間内。藉此使基 板之表面近旁的電漿分布良好，且可有效對大面積基板進 行成膜。 在隔壁板上附設清潔用電力導入棒。在適當的時間上供 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -14- 476807 A7 B7 五、發明説明（12) 給電力Μ進行清潔作業。即使利用隔壁板來劃分形成電獎 生成空間和成膜處理空間，亦可適切地維持成膜處理空間 的清潔度。 【圖式之簡單說明】 圖1顯示本發明之第一實施形態的重要部位縱截面圖。 圖2為隔壁板上所形成的孔之放大截面圖。 圖3為從圖ΙΑ-Α中觀看放電用電極的部分截面圖。 圖4顯示本發明之第二實施形態的重要部位縱截面圔。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 【元件 編號 之 說 明 1 L 實 質 的 孔 長 度 11 玻 璃 基 板 12 真 空 容 器 12a 上 容 器 12b 下 容 器 13 排 氣 纖 m 構 14 排 氣 璋 15 隔 壁 板 16 電 漿 生 成 空 間 17 成 膜 處 理 空 間 18 基 板 保 持 機 構 20 加 熱 器 22 孔 23 電 漿 24 上 壁 板 15 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 476807 A7 B7 五、發明説明（13) 25 管 構 件 26 電 極 26a 多 數 孔 28 環 狀 絕 緣 構 件 29 環 狀 絕 緣 構 件 30 導 入 管 31 流 量 控 制 器 32 氧 氣 供 給 源 33 均 等 板 34 導 入 管 35 電 力 導 入 棒 36 電 力 導 入 棒 37 絕 緣 物 38 絕 緣 物 41 絕 緣 物
严- li J -------：------ (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 16

Claims (1)

  1. 經濟部智慧財t，？！ * 476807 I 90. 3. 2% _§_修乒本 六、申請專利範圍 1. 一種CVD成膜裝置，係在真空容器內生成電漿以使活 性種（自由基：r ad i c a 1 )發生，且在基板上利用該活性種和 材料氣體進行成膜處理，其特徵爲： 將形成有複數個小徑孔之隔壁板設於前述真空容器內， 用以將該真空容器之內部區分成電漿生成空間及成膜處理 空間； 將形成有複數個大徑孔之放電用電極板設於前述電漿生 成空間之中間位置，用以在形成前述放電用電極板與前述 電漿生成空間的前述隔壁板及上壁板之間生成電漿； 供給至前述真空容器內的前述材料氣體，係通過貫穿及 分散前述電漿生成空間、前述放電用電極板的大徑孔和前 述隔壁板而設的複數個導電性之管道構件而直接導入於前 述成膜處理空間內； 在前述電漿生成空間所生成的前述活性種，係通過形成 於前述隔壁板之小徑孔或前述放電用電極板的大徑孔而導 入於前述成膜處理空間內。 2 .如申請專利範圍第1項之CVD成膜裝置，其中，形成 於前述隔壁板上的前述複數個小徑孔之各個，係在將孔內 的氣體流速設爲u，將實質的孔長度設爲L，將相互氣體擴 散係數設爲D時，在滿足uL/D>l之條件的狀態下，將前述 活性種導入於前述成膜處理空間內。 3 ·如申請專利範圍第1項之CVD成膜裝置，其中，前述 隔壁板係連接在供給淸潔用高頻電力的高頻供電部上，並 適時地對前述隔壁板供給高頻電力以在前述成膜處理空間 仁紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） V®讀背面之注意事項再填寫本頁) * I— n n mm— n I n ϋ n an n mtmmm «ϋ 1_1 «1··* *1 i 476807 A8B8C8D8 六、申請專利範圍 內生成淸潔用電漿。 4 ·如申請專利範圍第1項之CVD成膜裝置，其中，在前 述複數個管道構件之入口側，設置具備均等板的氣體貯氣 筒。 5 .如申請專利範圍第1項之CVD成膜裝置，其中，在前 述電漿生成空間之上側位置設置前述放電用電極，且在該 放電用電極和前述隔壁板之間生成電漿，使前述隔壁板的 小徑孔與前述電極板的大徑孔的直徑爲大致相同。 (請先閱讀背面之注咅？事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 和口广· Ti >1 n n ϋ ϋ ϋ I I ϋ ϋ ϋ ^1 1 n ϋ 1 n n ϋ ϋ n H ϋ ϋ ϋ. I I ϋ 1
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JPH11312674A (ja) 1999-11-09

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