TW475924B - Piezoelectric ceramic - Google Patents
Piezoelectric ceramic Download PDFInfo
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- TW475924B TW475924B TW089111944A TW89111944A TW475924B TW 475924 B TW475924 B TW 475924B TW 089111944 A TW089111944 A TW 089111944A TW 89111944 A TW89111944 A TW 89111944A TW 475924 B TW475924 B TW 475924B
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- 239000000919 ceramic Substances 0.000 title claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 239000004372 Polyvinyl alcohol Substances 0.000 description 5
- 229910052746 lanthanum Inorganic materials 0.000 description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 5
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 5
- 229940093474 manganese carbonate Drugs 0.000 description 5
- 235000006748 manganese carbonate Nutrition 0.000 description 5
- 239000011656 manganese carbonate Substances 0.000 description 5
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 5
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 5
- 229920002451 polyvinyl alcohol Polymers 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- -1 lanthanide rare earth metal Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 241000282326 Felis catus Species 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 2
- 229910003452 thorium oxide Inorganic materials 0.000 description 2
- 101100163122 Arabidopsis thaliana ARPC2A gene Proteins 0.000 description 1
- 101100014264 Arabidopsis thaliana GCS2 gene Proteins 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 101150046895 SCOC gene Proteins 0.000 description 1
- 101100191082 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GLC7 gene Proteins 0.000 description 1
- 101100030351 Schizosaccharomyces pombe (strain 972 / ATCC 24843) dis2 gene Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002253 acid Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical group 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/475—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on bismuth titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/47—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on strontium titanates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
^/5924 左、發明k明？ii) N·—* ... t明之背意 k發明之領 本發明是關於壓電陶瓷以及更特別的是關於 态、高溫感測器等領域的鉍層化合物。 、 ；/、又 L相關拮術之敘$ 壓電：=泛的用於電子設備領域’包括共振器 =以及其它利用電荷及位移反應的產品，包括感應器及； 動器。 1統的j:陶瓷已普遍的鐵電化，具有鈣鈦礦的結構， 如鎳鉻耐合金的四方晶系或是斜方晶系中 die ”以及μ耐合金的3四方晶 糸中的PbTA (以下稱Ρτ )。這些物質 具有次組成分的壓電陶瓷。 了此加入了命夕 然而’許多ΡΖΤ族或ΡΤ族的壓電陶瓷教 。(：的层里點，而日* >、w 玉丨司尤日遍具有20 0到400 C的居里J而且在咼溫下會降至常介電性，#生本懕帝 特性。因此’這種陶瓷並不適用於，例如高溫子： ，器控制感應器。再者，m系統或ρτ系統：壓電陶瓷包 a 60到70重置百分比的氧化錯（pb〇)。因此，能與 及公共 >可染的角度來看，該壓電陶瓷不符人兩 心千 以往一直希望能有具有車交高居 占及 而乂 陶竟的實現。 ^居里』及不含氧化鉛的壓電 由於此一需求，一不含鉛的壓電陶瓷已 Θ- 1 0 0 1 56 )，其為具有同—鈣鈦礦結構的i ^
Tl〇3—愈_3固體溶液。然而，該壓電^的
89111944.ptd 第4頁 475924
370 °C。因此，該壓電陶瓷不能在高 應器的感應器。 溫下做為控制原子反 再者，一般認為鉍層化合物是居里 壓電陶莞，而且不含錯。由Ί皿度400 〇的 穩定性，當它一經極化處理，9化口物八…、 ,^ ^缺而^ 处里可形成具有絕佳特性的高溫 /上化本身疋困難的，難免會導致極化 供制σ张/苔从两+ 要使此化合物達到足以用於電子設 備衣〇口所須的I電特性是有困難的。 J::面造ί:共振器做為電感體的情形下，壓電陶瓷 ί、：ΐί: 0的壓電特生，就是在共振頻率及反共振 f的係數）值或高—（㈣⑽ Θ的取大值，0 :相角）值。然而，尚未有 鉍層合物的壓電陶杳呈古ψ私 门不令叛口扣k裡 於共振Ξ 的壓電特性，而能有效的用 曼之概述 本發明即鑑於上述情況而& 含铋甘日1古古而產生。本發明之目的是提供不 s乾亚且具有咼居里點及 值的壓電陶瓷。 、铨的壓電特性，特別是高Qmax 為了達到此一目的，本菸日日坦yu 广 含Sii Τι· n自姓曰χ月棱供一壓電化合物，其包括 C“在7.49到7.67的範圍内。物，其中結晶格的軸比例 羊細敘述 以下將敘述本發明之具體例。 根據本發明，壓雷）¾)咨Η 玉陶尤疋-個具有SrBi4Ti4〇15類結晶的 475924 五、發明說明（3) 絲層化合物’其中結晶格的軸比例c / a在7 · 4 9到7 6 7的 圍内，最好在7· 49到7. 54的範圍内。軸比例c/a的下限$ 在7 · 4 9的原因是因為尚未能得到低於這些值的燒結物 <質^。 如果軸比例c / a大於7 · 6 7，則此化合物非為所需，因為、 Qmax會低於20且居里點會低於45 0 °C。 ' 接下來敘述尋找軸比例c/a的方法。根據astm卡， SrBi4Ti4〇ls屬於斜方晶族。精確的說，&軸不等於匕轴。然 而，a轴和b軸的長度幾乎相同，並可被視為假四角形。…如 同將會在具體例中敘述更多的細節，這種考慮是被允 的，因為以X光繞射法實際測試的結果顯示峰"（〇2〇) 1 』2〇0) t疊。因此，根據本發明，可解釋為a軸長度 ，二晶格常數是以x光繞射法分析。a軸的長度是以峰 〇 )计异，而c軸的長度是以峰（〇〇8 )計算， 八 d 別代入以下公式，於是可算出軸比例c/a。 者刀 {h2 + k2 + μ (a2 .1/2 (hk 1 ) 曰曰 乂ί 陶竟滿足以上所提之數值，以及-, :的軸比例c/a，制電陶£可被承認至少具有 欠^ 成分，例如包含鑭、m彭n或 土金屬族。壓電陶£可進—步包含錳、鋇 ：稀 ;力、：、；、辞、銻“夕、銳或钽等不純物或非i少Ϊ的 ★此情況下’含量最好低於這些組成分 本發明之壓電陶瓷是一個 化合物。如果數值及結晶袼 具有SrBiJi^5類結晶的鉍層 的軸比例c/a皆在範圍内，^
I思對絲的比例或今 的比例會超上鑭系稀土金屬族+錄或麵對鈇 量會因金屬元定義的位置。再者’氧的含 、、數戈氧的缺乏而有不同。 本發明壓電陶審> 4 a , β ^ ^ # ^ , τ ,尤之、、、ϋ θ曰粒子為紡錘形及/或細針形，而 T巧粒子大小並+ 4i α,τ ^ μ Λ1 10 η # ^寺別疋義。例如，縱向的平均粒子長度 馮1到10被未，最好是3到5微米。 =發明之壓電陶£具有45〇。〇以上的高居里點，以及 於2 0的Q m a X值。闵士 _ 大 此’该壓電陶瓷適合用於振動哭，岑古 溫感應器。再者，ώ+ m A同 無宝。 於忒反電陶瓷不含鉛，所以它對環境 接I來以貝施例的方式來敘述製造壓電陶瓷的方法。 物： >(卜人Z &始物質—一種氧化物或可藉鍛燒變為氧化 ί：：如，碳酸鹽、氫氧化物、，酸鹽、硝酸鹽 ,4，貝際^為鑭系稀土金屬族氧化物包括碳酸鳃 :CrIM氧化鉍⑻2。3 )、氧化鈦（Ti〇2 )、氧化鑭 Uh% )荨寺粉末於球磨機等類似物中濕混合。 將混合物乾燥。接著將混合物在750到1〇〇〇 t：的溫度下 到3小時。接著鍛燒的混合物被變成爛泥，並在球磨 機寻類似物中濕壓。將壓碎的混合物乾燥，然後如有需要 可加入粘合劑（binder)如聚乙烯醇（PVA )，之後將其加 工成粒狀物接著將粒狀物加壓模塑（重量為2 〇 〇 〇到3 〇 〇 〇 kgf/cm2 )以得到鑄模片。 士接著，鑄模片在1150到130〇1的溫度下實際燒結2到4小 日寸。然後將鑄模片在溫^_3(){rG的⑪油浴巾極化處理
475924
五、發明說明（5) (應用電場5至15MV/mm，1至10分鐘）。實際的燒結可在大 氣中或在氧的分壓較空氣高或低的氣體中或在氧氣中進 行。在使用PVA等枯合劑的情形下，在禱模片燒結前，最 好將鑄模片經熱處理以燒掉钻合劑。 實施例 然而，此實施例並未 本發明將以實施例的方式來敘述 以任何方式限制本發明。 、氧化鈦（Ti〇2 氧化髟（Sm2 03 氧化鋼（Dy2 03 氧化飾（C e 0?) 準備好做為起始物質之氧化鉍（Bi2〇3 )、碳酸總（SrC03 )、氧化鑭（La2〇3 )
)、氧化乳（Gd2 03 )、氧化镨（Pr6〇") )、氧化鈥（Ho2〇3 )、氧化铒（Er2〇3 ) 及碳酸猛（Μ n C 03 )的粉末。 測定每-種粉末的量以形成如表！所示之組成物。每一 種組成物以純水在球磨機中以鍅氧球混合。 將如此所得之每一種混合物完全乾燥並加壓模塑，之毛 在750到900。。的溫度下鍛繞2小時。接著，將每一鍛繞片 在球磨機中濕壓碎並乾燥’然後加入適量之聚乙烯醇 (PVA )並加工成粒狀物。 接著，將如此所得之粒狀物模塑入一薄盤中，其為長2 毫米X寬20毫米X厚h 5毫米，以單軸加壓機加以、 2 0 0 0 到 3 0 0 0kgf/cm2 的重量。 接著，將模塑片經熱處理以燒掉粘合劑，之後在115〇到 1 30 0 C的溫度下（大氣中）實際繞結2到4小時，於是得到一 燒結片。#著’將燒結片研磨至成為具厚度〇· 5毫米的平
4/州4
==，之後切成長6毫米及寬6毫米，之後以 势iMirr Μ 电極。接著，將如此形成之薄片在溫度15〇 Ρ /矽油浴中施以1到10分鐘5到15千伏特/毫米的電 琢進仃極化處理。如此可得樣品1到31的壓電陶瓷。 對以此法製成的每一種樣品，皆測定其晶格常數、軸比 。a、Qmaf及如（機械性的係數）值。測定結果如表丄所 不。圖1表不具有鑭為次組成分的樣品1到8 (
Bl4Ti4015 (0 $ χ $ 〇·5)之 χ 光繞射模式。lx x 比例c/a之方法： 將母個樣品在瑪瑙研绰中細壓碎，並利用χ光繞射分 析法測定晶格常數。以峰（2〇〇 )來計算a軸的長度，而刀以 峰（0 0 8 )計算c軸的長度，兩者分別代入下列公 算出軸比例c/a. d(hki) = a / {h2 + k2 + l2 (a2 /c2) }1/2 測定Qmax的方法： 這是利用Hewlett Packard公司所提供的阻抗分析儀 HP49 14A來測定。Qmax代表共振頻率和反共振頻率間的间 大Q值（=tan 0，0 :相角），並代表共振器之低伏特Z 動，而且必須大於20。 、微 測定Qm的方法 ： 這是利用Hewlett Packard公司所提供的阻抗分析 HP4914A來測定。 氧
475924 五、發明說明（7)表1 SI Ins i GOOOOI ISi9 coc>ld COIOS i 9ε9« sss cooos scoco LSI is ms 9Έ »·εΜ οϊα ο·Ιε Inooco αοεε 9601 Insco 9.S 600T· OS i.3 Co·? 101« o-iis
c/3SKi)3 f-ss (^)qSL ls^s_® * i 鬆口-R腾 (δ)
ff«) 5SI (时《) (w«) * I 0 s 黯賴Π5Π· 000 Ι1·1 89111944.ptd 芝卜 loSSA S9·卜 1015 §SA 962 SOS.卜 i·卜 gelfooIFg 9S10I5 6901 61FS fi 3S 9sf 6S1S S9Of 61 呀 S ssliss ίέι οεκς 2SC-SS100S 寸 S 9ISi sooollocors Ιζιηζ,ιοαοοιζειΙΩ 3si 6901coslg sosz,i9o1 612 SOSi, 9S1 6SFS S9Z, 6S19 ISAL6; 05g εΐιοΔ 6^016^5 III niliI 議 ϋ —顏讓 Ο Ο -Η Μ CO ΙΟ Ο Ο Ο Ο Ο Ο Ο DIS2 tu.fc» 丨 6Β552 ΗΠ3Ε2 GCS2 tu··， rnWy? *?? ^Τ9ζ m?gv mw> 瓶瓶 瓶萌箱猫链 t'· ΙΟ σ> ΙΟ 00 ΙΟ οι 6 «? d ο ο r—t »-Η ^ Ο Ο Ο Ο Ο Ο Ο 疆翳翳靈翳議疆 σ> ο σ> σ> σ> 丨 ο m 6 d o' d ο Α °9 Μ 黴
Cl CQ 第10頁 475924 五、發明說明（8 表1續 σ 寸寸m 〇> W in m 卜 v〇 〇 〇〇 〇 i-H 〇 m (Ν (Ν CN m m «ο (N O ro >〇 寸 m 寸 6164 4865 3933 7794 00 (Ν (Ν ^ «•η rn ΟΟ Qmax 30.2 30.0 20,4 9.6 52.1 t> in 寸· ^ “ cn vo Ό 00 m 31.2 53.1 36.8 44.8 晶格常數 a=b(埃)c(埃）軸比例 c/a 5.426 40.76 7.512 5.416 40.79 7.530 5.421 41.54 7.664 5.419 42.03 7.756 5.438 40.99 7.538 5.423 40.72 7.508 5.408 41.69 7.708 5.424 40.80 7.523 5.432 40.97 7.543 5.424 40.83 7.528 5.429 40.90 7.534 5.424 40.81 7.523 5.423 40.81 7.526 丨5.433 40.92 7·532 鉍 m 层《 滕駿 vlrnll P 碳酸錳 0.5 碳酸錳 0.5 碳酸錳 0.5 碳酸錳 0.5 碳酸錳 0.5 ^ « 寸寸寸寸寸 寸寸寸 寸寸 寸寸 寸寸 ^ I 寸寸寸寸寸 寸寸寸 寸寸 寸寸 寸寸 取代 量 (莫耳） —(N m 寸— ο ο ο d 〇 r-H CO '―1 Ο Ο Ο r-H r-H o o i—H r-H Ο ο r—Η τ—Η Ο ο 緦取代 物質 (莫耳） nN\ wn N\\ \N\ <m <m <m <m <h^\ 〇> 〇〇 o o o o o J 蛾領峨 ^ l> On Ο Ο Ο 驪灑 σ> c\ o o On ON Ο Ο h~n~ Ιττγ 猫猫 On d d 壓電陶瓷 樣品編號 00 O *一（N r—i (N CN m *寸 (Ν (Ν CN r- (Ν (N ΟΟ Ον (Ν (Ν 〇 m m 1111111 89111944.ptd 第11頁 / 五、發明說明（9) 如表1戶斤- 族）及/或不，在不考慮次組成分的種類屬（鑭系稀土金屬 SrBi4Ti 〇不:考慮非常微量的添加物（錳）的存在與否，具有 圍内的^15類結晶，結晶格的軸比例c/a在'49到7· 67的範 再如^陶竟電麼，已被證實具有大於2(^Qmax值。 繞射模弋+所不’在次組成分鑭的取代量為χ = 〇· 3時，X光 x = 〇.5時^峰（〇〇8)代表一新的峰，而當取代量為 轉移與峰全部轉移至低角度位置。峰（〇〇8)如此的 比例C/aV過二咸少的情形—致，其導因於表1所示的軸 廣=Sϋ 1該壓電陶究為含有SrBi4Ti4〇15類結晶的絲 M :人〜晶格的轴比例c/a在7. 49到7. 67的範圍内。 由於陳居里點高於45〇t，再者Qmax值大於20，故 而該I κ勾瓷具有極佳的壓電特性。
475924 圖式簡單說明 在附圖中： 圖式為在本發明中做為具體例之含鑭樣品的X光繞射模 式圖。
IBB 89111944.ptd 第13頁
Claims (1)
- 化人仏種壓電陶瓷，其包含一含有SrBi4Ti4〇i5類結晶的鉍屑 合物，呈中έ士日从^ + 曰 /、τ、、、口日日格的軸比例c/a在7· 49到7· 67的範圍 Y·如申請專利範圍第i項之壓電陶瓷 • 4 9到7 · 5 4的範圍内。 以3如申請專利範圍第丨項之壓電陶瓷 上’而居里點為45 0 °C或以上。 之4社Ϊ申請專利範圍第1項之壓電陶瓷 、〜晶粒子為紡錘形及/或細針形。 、已·，如申凊專利範圍第4項之壓電陶瓷 勺平均粒子大小在1到1 〇微米的範圍内 6.如申請專利範圍第5項之壓電陶瓷 的平均粒子大小在3到5微米的範圍内。 其中轴比例c / a在 其中Qmax為2 0或 其中該壓電陶兗 其中該結晶粒子 其中該結晶粒子89111944.ptd
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| EP1375448A3 (en) * | 2000-02-08 | 2004-01-28 | TDK Corporation | Piezoelectric ceramics |
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| US7008669B2 (en) * | 2001-06-13 | 2006-03-07 | Seiko Epson Corporation | Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element |
| JP4423872B2 (ja) | 2003-03-28 | 2010-03-03 | Ｔｄｋ株式会社 | 圧電セラミックスおよびその製造方法 |
| US7060586B2 (en) * | 2004-04-30 | 2006-06-13 | Sharp Laboratories Of America, Inc. | PCMO thin film with resistance random access memory (RRAM) characteristics |
| CN106927816A (zh) * | 2015-12-29 | 2017-07-07 | 徐玉青 | 一种高温压电陶瓷材料及其多层压电陶瓷致动器 |
| CN113511893B (zh) * | 2021-03-24 | 2022-08-05 | 广西大学 | 一种bnt基三层结构的高储能密度陶瓷及其制备方法 |
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| DE69310042T2 (de) | 1992-07-31 | 1997-12-04 | Toyota Motor Co Ltd | Lamellare Wismut enthaltende Verbindung |
| JPH09100156A (ja) | 1995-10-04 | 1997-04-15 | Nikon Corp | 誘電体磁器組成物 |
| US6004474A (en) | 1997-03-28 | 1999-12-21 | Tdk Corporation | Piezoelectric ceramic composition |
| JP2942535B1 (ja) | 1998-03-06 | 1999-08-30 | ティーディーケイ株式会社 | 圧電体磁器組成物 |
| DE69923635T2 (de) | 1998-08-21 | 2005-07-07 | Tdk Corp. | Piezoelektrische Keramiken |
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| JP2001002468A (ja) | 2001-01-09 |
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