TW456031B - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuit Download PDFInfo
- Publication number
- TW456031B TW456031B TW089116100A TW89116100A TW456031B TW 456031 B TW456031 B TW 456031B TW 089116100 A TW089116100 A TW 089116100A TW 89116100 A TW89116100 A TW 89116100A TW 456031 B TW456031 B TW 456031B
- Authority
- TW
- Taiwan
- Prior art keywords
- signal
- data
- parallel
- semiconductor integrated
- integrated circuit
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 230000015654 memory Effects 0.000 claims abstract description 66
- 230000010363 phase shift Effects 0.000 claims description 54
- 230000002079 cooperative effect Effects 0.000 claims description 10
- 230000000875 corresponding effect Effects 0.000 claims description 5
- 239000008186 active pharmaceutical agent Substances 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 15
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000011664 signaling Effects 0.000 abstract description 2
- 239000000872 buffer Substances 0.000 description 23
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 21
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 18
- 101100328957 Caenorhabditis elegans clk-1 gene Proteins 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000001360 synchronised effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 101100510299 Oryza sativa subsp. japonica KIN7A gene Proteins 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 101100179038 Hordeum vulgare IAD1 gene Proteins 0.000 description 3
- 241000282376 Panthera tigris Species 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000011257 shell material Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35054199A JP4071910B2 (ja) | 1999-12-09 | 1999-12-09 | 半導体集積回路 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW456031B true TW456031B (en) | 2001-09-21 |
Family
ID=18411196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089116100A TW456031B (en) | 1999-12-09 | 2000-08-10 | Semiconductor integrated circuit |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US6343041B1 (enExample) |
| JP (1) | JP4071910B2 (enExample) |
| TW (1) | TW456031B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6825698B2 (en) * | 2001-08-29 | 2004-11-30 | Altera Corporation | Programmable high speed I/O interface |
| KR100477494B1 (ko) * | 1995-01-31 | 2005-03-23 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체 메모리 장치 |
| JP4071910B2 (ja) * | 1999-12-09 | 2008-04-02 | 富士通株式会社 | 半導体集積回路 |
| JP3848038B2 (ja) * | 2000-01-12 | 2006-11-22 | 株式会社日立製作所 | 半導体集積回路 |
| JP4612139B2 (ja) * | 2000-02-08 | 2011-01-12 | 富士通セミコンダクター株式会社 | 入力回路及びその入力回路を利用する半導体装置 |
| US7120761B2 (en) * | 2000-12-20 | 2006-10-10 | Fujitsu Limited | Multi-port memory based on DRAM core |
| US6549444B2 (en) * | 2001-04-12 | 2003-04-15 | Samsung Electronics Co., Ltd. | Memory device with prefetched data ordering distributed in prefetched data path logic, circuit, and method of ordering prefetched data |
| JP3717912B2 (ja) * | 2003-11-06 | 2005-11-16 | 沖電気工業株式会社 | インタリーブ装置 |
| DE102004014973B3 (de) * | 2004-03-26 | 2005-11-03 | Infineon Technologies Ag | Parallel-Seriell-Umsetzer |
| JP2005326203A (ja) * | 2004-05-13 | 2005-11-24 | Matsushita Electric Ind Co Ltd | 半導体集積回路の実速度検査方法 |
| JP2006277872A (ja) * | 2005-03-30 | 2006-10-12 | Elpida Memory Inc | 半導体記憶装置及びそのテスト方法 |
| US20080288684A1 (en) * | 2006-01-03 | 2008-11-20 | Ellison Brandon J | Design structure for an address translation device |
| US7444453B2 (en) * | 2006-01-03 | 2008-10-28 | International Business Machines Corporation | Address translation device |
| JP5410075B2 (ja) * | 2008-11-11 | 2014-02-05 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置および遅延路の制御方法 |
| JP2011108300A (ja) * | 2009-11-13 | 2011-06-02 | Elpida Memory Inc | 半導体装置及びその制御方法並びに半導体装置を備えたデータ処理システム |
| KR101326628B1 (ko) * | 2010-12-02 | 2013-11-07 | 주식회사 엘지화학 | 신규한 노칭 장치 및 이를 사용하여 생산되는 이차전지 |
| JP6170596B1 (ja) * | 2016-06-15 | 2017-07-26 | ウィンボンド エレクトロニクス コーポレーション | 半導体装置 |
| US10170166B1 (en) * | 2017-09-08 | 2019-01-01 | Winbond Electronics Corp. | Data transmission apparatus for memory and data transmission method thereof |
| US10366742B1 (en) * | 2018-02-07 | 2019-07-30 | Micron Technology, Inc. | Memory device parallelizer |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2376572A1 (fr) * | 1976-12-30 | 1978-07-28 | Roche Alain | Circuits de conversion serie-parallele et de multiplexage ou de conversion parallele-serie et de demultiplexage pour des multiplex numeriques |
| JPS59221741A (ja) | 1983-05-31 | 1984-12-13 | Sanyo Electric Co Ltd | 記憶用半導体装置 |
| JPS6282417A (ja) | 1985-10-07 | 1987-04-15 | Casio Comput Co Ltd | スイツチ検出回路 |
| JP2000067577A (ja) * | 1998-06-10 | 2000-03-03 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
| JP2000163965A (ja) * | 1998-11-27 | 2000-06-16 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
| JP4071910B2 (ja) * | 1999-12-09 | 2008-04-02 | 富士通株式会社 | 半導体集積回路 |
-
1999
- 1999-12-09 JP JP35054199A patent/JP4071910B2/ja not_active Expired - Lifetime
-
2000
- 2000-08-10 TW TW089116100A patent/TW456031B/zh not_active IP Right Cessation
- 2000-08-10 US US09/635,868 patent/US6343041B1/en not_active Expired - Lifetime
-
2001
- 2001-12-28 US US10/028,428 patent/US6438054B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20020057614A1 (en) | 2002-05-16 |
| US6438054B1 (en) | 2002-08-20 |
| US6343041B1 (en) | 2002-01-29 |
| JP4071910B2 (ja) | 2008-04-02 |
| JP2001167575A (ja) | 2001-06-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |