TW449932B - Low temperature formation of backside ohmic contacts for vertical devices - Google Patents

Low temperature formation of backside ohmic contacts for vertical devices Download PDF

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Publication number
TW449932B
TW449932B TW088116007A TW88116007A TW449932B TW 449932 B TW449932 B TW 449932B TW 088116007 A TW088116007 A TW 088116007A TW 88116007 A TW88116007 A TW 88116007A TW 449932 B TW449932 B TW 449932B
Authority
TW
Taiwan
Prior art keywords
substrate
semiconductor
semiconductor device
silicon carbide
implanted
Prior art date
Application number
TW088116007A
Other languages
English (en)
Chinese (zh)
Inventor
David B Slater Jr
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of TW449932B publication Critical patent/TW449932B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
TW088116007A 1998-09-16 1999-09-16 Low temperature formation of backside ohmic contacts for vertical devices TW449932B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10054698P 1998-09-16 1998-09-16

Publications (1)

Publication Number Publication Date
TW449932B true TW449932B (en) 2001-08-11

Family

ID=22280313

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088116007A TW449932B (en) 1998-09-16 1999-09-16 Low temperature formation of backside ohmic contacts for vertical devices

Country Status (9)

Country Link
EP (1) EP1125320A1 (https=)
JP (2) JP4785249B2 (https=)
KR (1) KR100694681B1 (https=)
CN (1) CN1178277C (https=)
AU (1) AU6391699A (https=)
CA (1) CA2343416A1 (https=)
MX (1) MXPA01002751A (https=)
TW (1) TW449932B (https=)
WO (1) WO2000016382A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6884644B1 (en) 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6803243B2 (en) * 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6909119B2 (en) 2001-03-15 2005-06-21 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US7138291B2 (en) * 2003-01-30 2006-11-21 Cree, Inc. Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
US7262434B2 (en) 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
US7473929B2 (en) 2003-07-02 2009-01-06 Panasonic Corporation Semiconductor device and method for fabricating the same
JP2006086361A (ja) * 2004-09-16 2006-03-30 Stanley Electric Co Ltd 半導体発光素子及びその製造方法
WO2007032214A1 (ja) * 2005-09-14 2007-03-22 The Kansai Electric Power Co., Inc. 炭化珪素半導体素子の製造方法
WO2009157299A1 (ja) * 2008-06-26 2009-12-30 サンケン電気株式会社 半導体装置及びその製造方法
KR101220407B1 (ko) 2010-12-14 2013-01-21 (재)한국나노기술원 반도체 발광 소자
JP5811829B2 (ja) 2011-12-22 2015-11-11 住友電気工業株式会社 半導体装置の製造方法
JP5742712B2 (ja) 2011-12-29 2015-07-01 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6253133B2 (ja) * 2012-04-27 2017-12-27 富士電機株式会社 炭化珪素半導体装置の製造方法
US9496366B2 (en) 2013-10-08 2016-11-15 Shindengen Electric Manufacturing Co., Ltd. Method for manufacturing silicon carbide (SiC) semiconductor device by introducing nitrogen concentration of 5X1019 cm-3 or more at a boundary surface between thermal oxide film and the SiC substrate and then removing the thermal oxide film
JP7135443B2 (ja) * 2018-05-29 2022-09-13 富士電機株式会社 炭化ケイ素半導体装置及びその製造方法
CN115148601A (zh) * 2021-03-30 2022-10-04 无锡华润华晶微电子有限公司 半导体结构及其制备方法
EP4071786B1 (en) * 2021-04-06 2025-11-05 Hitachi Energy Ltd Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323022A (en) * 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
JP3303530B2 (ja) * 1994-06-23 2002-07-22 富士電機株式会社 炭化けい素半導体素子の製造方法
JPH08139053A (ja) * 1994-11-04 1996-05-31 New Japan Radio Co Ltd ＳｉＣへの電極の形成方法
JP3333896B2 (ja) * 1995-09-13 2002-10-15 富士電機株式会社 炭化珪素半導体装置の製造方法
WO1998037584A1 (en) * 1997-02-20 1998-08-27 The Board Of Trustees Of The University Of Illinois Solid state power-control device using group iii nitrides

Also Published As

Publication number Publication date
JP2002525849A (ja) 2002-08-13
WO2000016382A1 (en) 2000-03-23
CN1323446A (zh) 2001-11-21
EP1125320A1 (en) 2001-08-22
JP2011151428A (ja) 2011-08-04
CA2343416A1 (en) 2000-03-23
AU6391699A (en) 2000-04-03
MXPA01002751A (es) 2002-04-08
CN1178277C (zh) 2004-12-01
KR20010079759A (ko) 2001-08-22
KR100694681B1 (ko) 2007-03-13
JP4785249B2 (ja) 2011-10-05

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