JP4785249B2 - 縦型デバイスのための裏面オーミックコンタクトの低温形成 - Google Patents

縦型デバイスのための裏面オーミックコンタクトの低温形成 Download PDF

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Publication number
JP4785249B2
JP4785249B2 JP2000570823A JP2000570823A JP4785249B2 JP 4785249 B2 JP4785249 B2 JP 4785249B2 JP 2000570823 A JP2000570823 A JP 2000570823A JP 2000570823 A JP2000570823 A JP 2000570823A JP 4785249 B2 JP4785249 B2 JP 4785249B2
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substrate
dopant
implanted
silicon carbide
semiconductor
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Expired - Lifetime
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JP2000570823A
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Japanese (ja)
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JP2002525849A (ja
JP2002525849A5 (https=
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スレイター，デーヴィッド・ビー，ジュニアー
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
JP2000570823A 1998-09-16 1999-09-16 縦型デバイスのための裏面オーミックコンタクトの低温形成 Expired - Lifetime JP4785249B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10054698P 1998-09-16 1998-09-16
US60/100,546 1998-09-16
PCT/US1999/021475 WO2000016382A1 (en) 1998-09-16 1999-09-16 Low temperature formation of backside ohmic contacts for vertical devices

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011108544A Division JP2011151428A (ja) 1998-09-16 2011-05-13 裏面オーミックコンタクトを備えた縦型の半導体デバイス

Publications (3)

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JP2002525849A JP2002525849A (ja) 2002-08-13
JP2002525849A5 JP2002525849A5 (https=) 2005-12-22
JP4785249B2 true JP4785249B2 (ja) 2011-10-05

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JP2000570823A Expired - Lifetime JP4785249B2 (ja) 1998-09-16 1999-09-16 縦型デバイスのための裏面オーミックコンタクトの低温形成
JP2011108544A Pending JP2011151428A (ja) 1998-09-16 2011-05-13 裏面オーミックコンタクトを備えた縦型の半導体デバイス

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JP2011108544A Pending JP2011151428A (ja) 1998-09-16 2011-05-13 裏面オーミックコンタクトを備えた縦型の半導体デバイス

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Country Link
EP (1) EP1125320A1 (https=)
JP (2) JP4785249B2 (https=)
KR (1) KR100694681B1 (https=)
CN (1) CN1178277C (https=)
AU (1) AU6391699A (https=)
CA (1) CA2343416A1 (https=)
MX (1) MXPA01002751A (https=)
TW (1) TW449932B (https=)
WO (1) WO2000016382A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6884644B1 (en) 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6803243B2 (en) * 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6909119B2 (en) 2001-03-15 2005-06-21 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US7138291B2 (en) * 2003-01-30 2006-11-21 Cree, Inc. Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
US7262434B2 (en) 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
US7473929B2 (en) 2003-07-02 2009-01-06 Panasonic Corporation Semiconductor device and method for fabricating the same
JP2006086361A (ja) * 2004-09-16 2006-03-30 Stanley Electric Co Ltd 半導体発光素子及びその製造方法
WO2007032214A1 (ja) * 2005-09-14 2007-03-22 The Kansai Electric Power Co., Inc. 炭化珪素半導体素子の製造方法
WO2009157299A1 (ja) * 2008-06-26 2009-12-30 サンケン電気株式会社 半導体装置及びその製造方法
KR101220407B1 (ko) 2010-12-14 2013-01-21 (재)한국나노기술원 반도체 발광 소자
JP5811829B2 (ja) 2011-12-22 2015-11-11 住友電気工業株式会社 半導体装置の製造方法
JP5742712B2 (ja) 2011-12-29 2015-07-01 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6253133B2 (ja) * 2012-04-27 2017-12-27 富士電機株式会社 炭化珪素半導体装置の製造方法
US9496366B2 (en) 2013-10-08 2016-11-15 Shindengen Electric Manufacturing Co., Ltd. Method for manufacturing silicon carbide (SiC) semiconductor device by introducing nitrogen concentration of 5X1019 cm-3 or more at a boundary surface between thermal oxide film and the SiC substrate and then removing the thermal oxide film
JP7135443B2 (ja) * 2018-05-29 2022-09-13 富士電機株式会社 炭化ケイ素半導体装置及びその製造方法
CN115148601A (zh) * 2021-03-30 2022-10-04 无锡华润华晶微电子有限公司 半导体结构及其制备方法
EP4071786B1 (en) * 2021-04-06 2025-11-05 Hitachi Energy Ltd Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323022A (en) * 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
JP3303530B2 (ja) * 1994-06-23 2002-07-22 富士電機株式会社 炭化けい素半導体素子の製造方法
JPH08139053A (ja) * 1994-11-04 1996-05-31 New Japan Radio Co Ltd ＳｉＣへの電極の形成方法
JP3333896B2 (ja) * 1995-09-13 2002-10-15 富士電機株式会社 炭化珪素半導体装置の製造方法
WO1998037584A1 (en) * 1997-02-20 1998-08-27 The Board Of Trustees Of The University Of Illinois Solid state power-control device using group iii nitrides

Also Published As

Publication number Publication date
JP2002525849A (ja) 2002-08-13
WO2000016382A1 (en) 2000-03-23
TW449932B (en) 2001-08-11
CN1323446A (zh) 2001-11-21
EP1125320A1 (en) 2001-08-22
JP2011151428A (ja) 2011-08-04
CA2343416A1 (en) 2000-03-23
AU6391699A (en) 2000-04-03
MXPA01002751A (es) 2002-04-08
CN1178277C (zh) 2004-12-01
KR20010079759A (ko) 2001-08-22
KR100694681B1 (ko) 2007-03-13

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