TW441062B - Carrier substrate for producing semiconductor device - Google Patents

Carrier substrate for producing semiconductor device Download PDF

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Publication number
TW441062B
TW441062B TW088120790A TW88120790A TW441062B TW 441062 B TW441062 B TW 441062B TW 088120790 A TW088120790 A TW 088120790A TW 88120790 A TW88120790 A TW 88120790A TW 441062 B TW441062 B TW 441062B
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TW
Taiwan
Prior art keywords
resin
metal substrate
groove
substrate
semiconductor wafer
Prior art date
Application number
TW088120790A
Other languages
English (en)
Inventor
Hideki Toya
Mitsuyoshi Imai
Masaki Sakaguchi
Naoki Yamabe
Mamoru Suwa
Original Assignee
Shinko Electric Ind Co
Fujitsu Ltd
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Filing date
Publication date
Application filed by Shinko Electric Ind Co, Fujitsu Ltd filed Critical Shinko Electric Ind Co
Application granted granted Critical
Publication of TW441062B publication Critical patent/TW441062B/zh

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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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Description

經濟部智慧財產局員工消費合作社印製 4 41 0 6 2 Δ7 Α7 ___ Β7 五、發明說明（1 ) 發明之背景 1.發明之領域 本發明是關於一種用於製造半導艘裝置之載負基板， 一種載負基板的生產方法，一半導體裝置以及一種半導體 裝置的生產方法。更特別地是，本發明是關於一種適用於 生產樹埤棋的載負基板’關於無引腳表面封裝型半導體裝 置’關於一種載負基板的生產方法，關於一半導體裝置以 及關於一種半導艎裝置的生產方法^ 2·相關技藝之說明 在半導饉裝置的領域中，由於電子裝置的尺寸已被減 小且其積集密度已變得更高，所以半導體晶片本身小型化 以及外部連接端子間距減小的要求以變得更強烈，以便減 少半導《裝置的尺寸並增加其積集密度。 曰本公開專利公報（Kokai)第9-162348號提出一種無 引腳表面封裝型的封裝物構造，以作為用於完成樹脂每型 半導體裝置尺寸缩減的構造· 如附圖的第2d圈所示，使用該封裝物構造的半導艟裝 置包含一半導«晶片20、一樹脂封裝物22(用於密封半導 體晶片20)、一樹脂凸出物24(形成於連接至母板之樹脂封 裝物22表面上，以由該表面凸出的方式》)、一電鍍膜14( 施加於樹脂凸出物24外圍表面及導線30,用於將半導體晶 片20的各電極28電連接至電鍍膜14。 該半導體裝置係藉由用於製造半導體裝置的載負基板 50而製造，該基板50包含一支撐電鍍膜14且該半導«晶片 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 — — — — — — — — — — — — ·1111111 ^ --------I ^ <請先閱讀背面•之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（2 ) 20被固著於其上之似板狀基板12,如第Id圖所示。 首先’ 一該載負基板50的製程將參考第la圖至第Id圖 而被說明。 一光阻39首先被施加於金屬基板12的二個表面上。金 V. 屬基板12表面12a上的該光阻在相當於樹脂凸出物24的部 • 分被移除，而形成一光阻圖案第la圖· 其次，該具有光阻圖案形成於其上之金屬基板12被潛 浸於一蝕刻物質溶液中，且蝕刻被進行至該相當於樹脂凸 出物24的金屬基板12部分為半蝕刻，而形成一凹槽16第lb 圖。 該光阻圈案被留置如上，並進行電鍍，而形成一電鍍 膜14於凹槽16中第lc圖。 剝除光阻而完成載負基板50第Id圖。 其次，一種使用如此形成之該載負基板50而製造半導 體裝置的方法將參考第2a，圖至第2d圖而被說明。 半導體晶片20係以黏著劑而固定於諸如上述之載負基 — 板50的一個表面12a第2a圖。 安置於半導艎晶片20上之各電極28以及形成於載負基 板50之金屬基板12上的電鍍膜14係藉導線接合而以導線30 電連接第2b圖。 一樹脂封裝物22係以樹脂成形法而被形成於該載負基 板50上，而以樹脂將半導體基板20及導線30連接部分密封 〇 金屬基板12係以蝕刻移除，其方式為留下載負基板50 本紙張尺度適用中國國家標準（CNS)A4规格（2〗0 297公* > 裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4 410 6 2 A7 B7 五、發明說明（3 ) 的電鍍膜14第2d圖》總之，該電鍍骐14被曝露於封裝物外 部，並作為外部連接端子的連接表面，而完成具有可被連 接至母板的構造的半導«裝置。順帶一提，諸如銅等被使 用為金屬基板12的材料，以便令人滿意地進行蝕刻。 然而，在根據上述習知技藝的載負基板50的構造中， 組成該外部連接端子的電鍍膜14係僅黏著於沿著具有半球 形剖面形狀的凹槽16形狀流入凹槽16的樹脂*因此，黏著 力相當低，且電鍍膜14可能由樹脂凸出物24的表面剝除， 而導致製品可靠度降低。 因此，連接至半導艘裝置母板之外部連接_端子之可靠 度無法被改良的問題仍舊無法解決· 發明之概要 因此，本發明之目標係為提供一種載負基板，多可杳 樹脂貘的半導《裝置（無引脚產，改良作為 外連接端子之《鍍膜舆樹，藤凸出物表面之間的黏著性，並 可改良可靠度：以及提像二一種半 導體裝里與該半導體裝置的製程· 為了達成上述目標，本發明提供一種載負基板，其使 用於製造包含一半導《晶片、一密封該半導《晶片的樹脂 封裝物、一安置於連接至母板的樹脂封裝物表面上的樹脂 凸出物、一復蓋在樹脂凸出物表面的電鍍膜以及一將半導 體晶片的一電極電連接至該電鍍膜的導線的半導饉裝置， 其中該載負基板包含可為不溶解電鍍膜之 溶解並適用於同定該丰導醴晶月之似板狀金屬基板 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） I ---- - - - - - - -- — — — — — — I— — — — — — — — I (請先閲讀背面·之注意事項再填寫本頁) 6 經濟部智慧財產局員工消費合作社印*1衣 A7 ________B7___ 五、發明說明（4 ) 置在相當於樹脂凸出物之金屬基板位置並具有一底部表面 和/或側表面（其係為崎嶇）的凹槽；以及一連續覆蓋在凹 槽底部表面及側表面並具有相當於該底部表面及側表面之 表面形狀的表面形狀的電鍍膜。 本發明亦提供一種製造載負基板的方法，其使用於製 • 造包含一半導體晶片、一密封該半導體晶片的樹脂封裝物 、一安置於連接至母板的樹脂封裝物表面上的樹脂凸出物 、一覆蓋在樹脂凸出物表面的電鍍膜以及一將半導體晶片 的一電極電連接至該電鍍膜的導線的半導體裴置，該載負 基板包含可為不溶解電鍍膜之蝕刻物質溶液所溶解並適用 於固定該半導體晶片之似板狀金屬基板；一安置在相當於 樹脂凸出物之金屬基板位置並具有一底部表面和/或側表 面（其係為崎嶇）的凹槽；以及一連續覆蓋在凹槽底部表面 及側表面並具有相當於該底部表面及側表面之表面形狀的 表面形狀的電鍍膜，該方法包含的步驟為： 形卓該蝕刻光阻層於金屬基板的二個表面上； - 將該金屬基板表面之一上的蝕刻光阻層刻劃，而形成 一具有一開口（在相當於該樹脂凸出物的位置）以及部分的 蝕刻光阻層以似島狀殘留於該開口中的光阻圖案。 蝕刻該金屬基板，使蝕刻基於該似島狀蝕刻光阻層的 存在而在該開口中不均勻地進行，以及藉此形成一具有一 側表面與一崎嶇底部表面（在光阻圈案之開口的位置）的凹 槽；以及 形成一連續覆蓋在凹槽底部表面及側表面並具有相當 本紙張尺度適用中國國家標準（CNS)A4规格（210 X 297公釐) 「7 H ^ ---I---^- — 1 —-----^ (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消f合作社印製 4 ΖΠ 〇 6 2 a? __Β7 五、發明說明（5 ) 於該底部表面及側表面之表面形狀的表面形狀的電鍍膜。 在本發明之方法的較佳實施例中，將該蝕刻光阻層刻 劃的步驟包含一個形成該具有崎嶇周邊的開口的步驟，且 將該金屬基板飪刻的步驟包含一個形成一具有崎嶇側表面 (相當於開口的縱深）與崎嶇底部表面之凹槽的步驟。根據 本實施例，該凹槽側面的表面積可被增加，且藉該密封樹 脂材料的黏著性更可被改良》 該似島狀蝕刻光阻層最好具有似長方形框狀。根據本 實施例，適當的崎嶇性可被提供於凹槽的底部表面，其表 面積可被増加且藉該密封樹脂的黏著性更可被改良。 本發明更提供一種製造載負基板的方法，其適用於製 造包含一半導«晶片、一密封該半導Λ晶片的樹脂封裝物 、一安置於連接至母板的樹脂封裝物表面上的樹脂凸出物 、一復蓋在樹脂凸出物表面的電鍍膜以及一將半導體晶片 的一電極電連接至該電鍍棋的導線的半導《裝置；該載負 基板包含可為不溶解電鍍膜之蝕刻物質溶液所溶解並適用 於固定該半導體晶片之似板狀金屬基板；一安置在相當於 樹脂凸出物之金屬基板位置並具有一底部表面和/或側表 面（其係為崎嶇）的凹槽；以及一連續復蓋在凹搰底部表面 及側表面並具有相當於該底部表面及側表面之表面形狀的 表面形狀的電鍍膜，該方法包含的步驟為： 形成一蝕刻光阻層於金屬基板的二個表面上； 將該金屬基板表面之一上的蝕刻光阻層刻劃，而形成 一具有崎嶇縱深的開口在相當於樹脂凸出物的位置； 本紙張尺度適用中國國家標準（CNS)A4規格（2】0 * 297公« > ----------------------^---------^ <請先Mit背面，之注意Ϋ項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 __B7___ 五、發明說明（6 ) #刻該金屬基板，而形成一具有_底部表面及一崎堪 側表面（相當於開口的縱深）的凹槽在相當於光阻囷案開口 之金屬基板的位置；以及 形成一連續覆蓋在凹槽底部表面及側表面並具有相當 於該侧表面及底部表面之表面形狀的表面形狀的電錄膜。 ’ 本發明亦提供一種製造半導«裝置的方法，該半導體 裝置包含一半導體晶片、一密封該半導逋晶片的樹脂封裝 物、一安置於連接至母Θ的樹脂封裝物表面上的樹脂凸出 物、一覆蓋在樹脂凸出物表面的電鍍膜以及一將半導體晶 片的一電極電連接至該電鍍膜的導線，该方法包含的步驟 為： 製備一載負基板，其包含可為不溶解電鍍膜之蝕刻物 質溶液所溶解並適用於固定該半導艎晶>{之似板狀金眉基 板：一安置在相當於樹脂凸出物之金屬基板位置並具有一 底部表面和/或側表面（其，係為崎喝）的凹槽；以及一連續 覆蓋在凹槽底部表面及側表面並具有相當於該底部表面及 側表面之表面形狀的表面形狀的電鍍膜； 將該半導體晶片固定於載負基板上； 將該半導體晶片的電極以藉導線接合的導線電連接至 載負基板的凹槽的電鍍膜； 藉樹脂成形形成一樹脂封裝物，用於將載負基板上之 該半導體晶片及導線密封，該樹脂封裝物包含藉電鍍膜固 定於金屬基板凹槽的凸出物並具有相當於凹槽表面形狀的 表面形狀；以及 本紙張尺度適用中國國家標準<CNS)A4规格（2〗〇 x 297公釐〉 9 --裝 (請先J0讀背面之注意事項再填寫本頁) 訂. --線_ 441062 A7 ' ---—------- 五、發明說明（7 ) 將該金屬基板溶解並移除，而留下復蓋未被移除之樹 脂凸出物表面的電級膜。 本發明亦提供一種半導體裝置，其包含一半導體晶片 、一密封該半導想晶片的樹脂封裝物、一安置於連接至母 板的樹脂封裝物表面上的樹脂凸出物、一覆蓋在樹脂凸出 物表面的電鍍琪以及一將半導體晶片的一電極電連接至該 電鍵膜的導線，其中該半導想裝置係以包含下列步麻的方 法製造： 製備一載負基板，其包u為不溶解雷鍍膜之舳釗物 質溶液所溶解並適用於固定該丰導艟晶片之似板狀金屬基 板；一安置在相當於樹脂凸出物之金屬基板位置並具有一 底部表面和/或側表面（其係為崎嶇）的凹槽；以及一連續 復蓋在凹槽底部表面及側表面並具有相當於該底部表面及 側表面之表面形狀的表面形狀的電鍍膜； 將該半導體晶片固定於載負基板上； 將該半導艎晶片的電極以藉導線接合的導線電連接至 載負基板的凹槽的電鍍膜； 藉樹脂成形形成一樹脂封裝物，用於將載負基板上之 該半導體晶片及導線密封，該樹脂封裝物包含藉電鍍膜固 定於金屬基板凹槽的凸出物並具有相當於凹槽表面形狀的 表面形狀；以及 將該金眉基板溶解並移除，而留下復蓋未被移除之樹 脂凸出物表面的電鍍膜。 圖式之簡要說明 本紙張尺度適用中困國家標準（CNS)A4規格（2】0 X 297公釐） ---------!«! ^i. (請先《讀背面· 之注意事項再填寫本頁) 訂.· •線· 經濟部智慧財產局員工消費合作社印製 10
經濟部智慧財產局員工消費合作社印製
第la圊至第1<5圖係為表示一種根據習知技藝之載負基 板的製法的橫剖面圊； 第2a圖至第2d圖係為表示一種使用根據習知技藝之載 負基板的半導體裝置製法的橫剖面圖； 第3圊係為表示根據本發明之一實施例之用於半導體 裝置的載負基板的楝剖面圖； 第4ei圖及第4b圊係為表示根據本發明之另一個實施例 之用於半導體裝置的載負基板的一平面第a圊及一橫剖面 第b圖； 第5a圖至第5b圖係為表示在第3圖所示之用於半導體 裝置的載負基板的製法中的光阻圖案形成法的一平面第a 圓及一橫剖面第b圖； 第6a圖至第6c圖係為表示在第3圖所示之用於丰導體 裝置的載負基板的製法中的飪刻法的一橫剖面圖； 第7圖係為表示在第3·®所示之用於半導想裝置的載負 基板的製法中的電鍍法的橫剖面圖； 第8a圖及第8b圈係為表示一種在根據本發明之半導艘 裝置製法中的導線接合法中的橫剖面圓。 較佳實施例之說明 本發明之較佳實施例將參考附圓而被詳細說明如下。 第3圖係為表示根據本發明之一實施例之用於半導想 裝置（以下僅稱為"載負基板“）的載負基板的橫剖面囷。 第4a圊及第4b圊係為表示根據本發明之另一個實施例之用 於半導體裝置的載負棊板的一平面第a圖及一橫剖面圖第b 裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁}
本紙張尺度適用令國困冢鮮（CNS)A4规格（2丨G * 297公灰 經濟部智慧財產局員工消費合作社印製 ..厶 α7 ___Β7 ------ 五、發明說明（9 ) 圖。 如第3圖所示，一種根據本發明之一實施例的載負基 板10包含一被成形為板狀的金屬基板12(一半導體晶片在 該半導體裝置的生產製程期間被固定於其，且其在該半導 體裝置完成前被移除）、一凹糟16(其形成在相當於前述樹 脂凸出物24(詳閱第2d圈）的金屬基柘丨2付g f 5_有_崎.丨f 表面16a於其中），以及一形成於凹槽16内表盘重鍵膜 14。 如第4a圖及第4b圈所示，根據本發明之另一個實施例 之載負基板10包含一個似板狀金基板12(—半導體晶片 在該半導艘裝置的製程期間被固著於其）、一凹槽16(其形 成在相當於前述樹脂凸出物（詳閱第2d圊）的金屬基板12位 置並具有一崎嶇表面16a)’以及一形成於凹槽16内表面上 的電鍍膜14。 一種半導體裝置可藉’由使用該載負基板10而被適當地 製造，其包含一半導艎晶片20、一密封該半導體晶片20的 樹脂封裝物22、一設置於表面連接至母板的樹脂封裝物22 表面上的樹脂凸出物24(以由該表面凸出的方式）、一安置 在樹脂凸出物24外圍表面的電鍵膜14以及一將半導體晶片 的電極28電連接至該電鍍膜14的導線。 換句話說，在根據本發明的半導體裝置中，電鍍膜14 被形成為凹櫓形狀，以使得其外圍表面形狀相當於金屬基 板12之凹槽16的内底部表面和/或内部側表面的形狀；而 該電鍍膜的内表面被形成為相當於該電鏟雎之外袅面的崎 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）
-------ii’i. (請先閱讀背面之注意事項再填寫本頁) I · --線· r,濟部智慧財產局員工消費合作社印製 A7 ------ -B7_五、發明說明（1〇 ) 喂形_狀°除了導線3〇的連接部分以外，該樹脂凸出物24被 成形為電鍍膜内表面的崎嶇形狀。 因為該崎凹槽16的内表面上，所以該凹 •槽16内表面的表面積可被增加‘因此，鍍骐14的表面積亦 可被增加’而製作凹_16内表两的崎返掉‘總之，链膜14 之内表面拉A^t被增加，且與該窜蝰椒脂；M·料賢—密後网 的面積〇因此，其W的衲加，鍍膜14 由該樹脂凸出物24剝離可被避免，以及該半導體 靠度可被改良。 無庸說明，藉由形成該崎嶇性於底部表面16a及側表 面16b二者上方，而完成第3圖所示之實施例及第4a圖與第 4b圖所示之實施例的構造，可獲得一較佳的效果。 其次’根據本發明之一實施例之載負基板的製程將逐 步被說明。 首先’ 一個蝕刻光阻32在光阻塗佈步驟中，以薄層的 形式被施加於金屬基板12的二個表面。在其次的光阻圓案 一形成步驟中，該蝕刻光阻32(在相當於金眉基板12表面之 一上方的樹脂凸出物24之部分中）被移除（以留下一部份的 蝕刻光阻32a於該部分中的方式），藉此形成如第5a困及第 5b圖所示之光阻圖案。 在本實施例中，以島狀留置在該相當於光阻凸出物24 之部分中的蝕刻光阻32a被成形為如第5a圖之長方形框狀（ 似環狀）。總之，該表面積可藉由適當地形成該崎嶇性於 凹槽16的内底部表面16a上而被增加，且與該密封樹脂评- --------------裝·！ (靖先閱讀背面之注意事項再填寫本頁} 訂· --線· -I n I · 本紙張尺度適用中國國家標準（CNS>A4婕格<2〗0 * 297公« ) 13 經濟部智慧財產局員工消費合作社印製 A7 ____B7_____ 五、發明說明（U ) 料的黏著性可被適切地改良。順帶一提’上述蝕刻光阻32a 部分的形狀並非僅限於該形狀’其可根據該樹脂凸出物24 的形狀及其尺寸，設計該光革，而以不同形狀（諸如簡單 方形島狀）被選擇性地形成。 其次，該蝕刻製程係如第6a圖至第6c圖所示被進行。 在本實施例的蝕刻製程中，蝕刻係於光阻圖案#形成 於其之金屬基板12部分被進行，而形成一具有崎嶇底部表 面16a的凹槽16 » 第6a圖表示該蝕刻製程的起始隋段，蝕刻光阻32被移 除之金屬基板12部分開始被溶解· 當飪刻進行至如第6b圖所示之某種程度時，該似島狀 蝕刻光阻32a將自然地剝離。〜 在蝕刻更進一步被進行時，其底部表面16a具有崎嶇 性之凹槽16被適切地形成，如第6c圖所示。 順帶一提，該凹槽16必须具有一預定深度，而將該半 導體裝置適當地固著於基板上。因此，該凹槽16被形成至 諸如約0.1mm的深度· 其次’一種用於形成該電鍍膜14於凹槽16内表面上的 電鍍製程係被完成，如第7圖所示。換句話說，當該蝕刻 光阻32的光阻圖案被以該方式留置時，電鍍係使用該蝕刻 光阻32作為電鍍未以便形成該電鍍膜丨4於凹槽16内表 面而被完成。 在該電鍍製程中，該電鍍層可以電解電鍍形成。 該電錢膜14的電錢層最好包^—個依序為金、把、錄 本紙張尺度適用中國因家棵準（CNSM4規格（2】〇 X 297公«〉 14 (請先S1S背面之沒意事項再填寫本頁) -=0 - .線. A7
經濟部智慧財產局員工消費合作社印製 五、發明說明（12 ) 及鈀的四層電鍍層。當該電鍍骐14(包含該四層電鍍層）被 轉換成該半導體裝置的樹脂凸出物24時，作為凹槽16最底 層的金電鍵層被暴露，而提供至外部連接端子的一連接表 面並可與焊料適當地接合’以使得對於電路基板的表面封 裝可被適當地進行。因為作為凹榜16最外層的纪電錢層可 以打線接合法而與金線適當地接合，所以其可被可靠地電 連接〇 當光阻32被撥除時，可獲得載負基板1〇(詳閱第3圖） 〇 其次，根據本發明之另一個實施例之載負基板的製程 將參考第4a圖至第4b圖而被說明。順帶一提，有關如上述 載負基板製程之相同步驟的說明將被省略》 為製造第4a圖及第4b圖所示之載負基板10,在金屬基 板12表面12a之一（相當於樹脂凸出物24)的部分的該蝕刻 光阻32係於該光阻圖案形戒製程中被移除，而形成該光阻 圊案，其係以定義該部分的縱深線32b變得崎嶇的方式完 成。 在該蝕刻製程中，在光阻圖案被形成於其之金屬基板 12部分係被蝕刻，以便形成具有崎嶇側表面16b的凹槽16 〇 總之，形成凹槽16側表面16b之電鍍膜14的表面積可 被增加，且電鍍膜14與密封樹脂材料之間的黏著性可被適 當地改良。因為該側表面16b具有弩曲的形狀，所以形成 該側表面的電鍍膜14亦以鸞曲的形狀被形成。總之，該密 本紙張尺度適用中固因家標準（CNS>A4規格（2丨0 « 297公* ) 15 — II ——— — — 1! ^ i — — — — — — — — — — — — (請先閱讀背面之注意事項再填寫本頁) A7 4 41 0 62 ---B7____ 五、發明說明（13 ) 封樹脂材料可以多重方向被接合於電鍍膜14，且其間的黏 著性可被適當地改良。順帶一提，“密封樹脂材料”一詞 代表用於形成第2a圊至第2d圖所示之樹脂封裝物22的樹脂 材料。 在上述之載負基板10製程後（如第2a圖至第2d圊中所 示之相同製程），該半導體裝置可藉由連續進行一個用於 將半導體晶片20固定於載負基板1〇的晶片固定製程（該半 導體晶片之固定）、一導線接合製程、一成形製程（樹脂成 形）以及藉蝕刻的金屬基板12移除而被製造。 若在打線接合製程中之導線接合的可靠度降低（因為 崎嶇性存在於電鍍膜14的接合區域中），則一金球34可被 預先形成，而預備用於第二次接合，如第8a圖及第8b圊所 示。換句話說，如第8a圖所示，金球34係以球接合而被預 先形成在形成於凹槽16内表面上之電鍍膜14上方。第一次 接合（球接合）被完成於半導體晶片20的電極28,而第二次 接合（鍥形物接合）被完成於該金球34·藉此方法，可確保 藉導線接合之電連接的可靠度。 雖然本發明已以其較佳時施例做說明，惟本發明並非 特別地僅限於此，而可在不背離其精神與範疇下，以不同 方式自然地被改變或改良， 根據本發明之載負基板，該凹楮的底部表面和/或側 表面被崎嶇化’而增加凹槽内表面的表面積》總之，被形 成以形成凹槽内表面崎嶇性的電鍍膜内表面將變得崎嶇， 而增加表面精。因此，電鍵膜内表面及密封樹脂材料之間 本紙張尺度通用中國國家標準（CNS)A4規格（2】0 x 297公藿） --------------- I I (請先閲讀背面•之注意事項再填寫本頁) 訂： -線· 經濟部智慧財產局員工消費合作社印製 16 A7 A7 經濟部智慧財產局員工消費合作社印制取 _____B7____ 五、發明說明（14) , 的黏著性可披立名，且羞•於樹脂凸出物的剝除可被避免。 因此，在樹脂膜的半導體裝置中（無引腳表面封裝形 式）’本發明可改良作為外連接端子之電鍍膜與樹脂凸出 物表面之間的黏著性，並可明顯地改良可靠度。 元件標號對照 10...載負基板 12…基板 12a…表面 24...樹腊凸出物 14...電鍍骐 28...電極 16...凹槽 , 30...導線 16a...崎嶇表面 32...蝕刻光阻 16 b...側表面 32a·..#刻光阻 20...半導體晶片 34...金球 22...樹脂封裝物 39...光阻 50...載負基板 本紙張尺度適用中國國家楳準（CNS)A4蚬格（210 * 297公* ) I I 裝！ 訂------線 (請先閲讀背面之注意事項再填寫本頁) 17 -

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  1. 第麵2_號私丨巾請財請私m®修正本 1 0 6 2修正曰期· 90钟4月 A8 B8 C8 ΠΛ
    申請專利範圍 修正 、V· ^ _
    (琦先閱讀背*之注意事項再填寫本頁> ^ 一種載負基板，其使用於製造包含一半導體晶片、一 密封該半導體晶片的樹腊封裝物、一安置於連接至母 板的樹脂封裝物表面上的樹脂凸出物、一復蓋在樹脂 凸出物表面的電鍍膜以及一將半導體晶片的一電極電 連接至該電鍍膜的導線的半導體裝置，該載負基板包 含： 一可為不溶解電鍍膜之蝕刻物質溶液所溶解並 適用於固定該半導體晶片之似板狀金屬基板； 一安置在相當於樹脂凸出物之金屬基板位置並 具有一底部表面和/或側表面（其係為崎嶇）的凹槽；以 及 一連續復蓋在凹槽底部表面及側表面並具有相 當於該底部表面及側表面之表面形狀的表面形狀的電 鍍膜。 經濟部智慧財產局貝工消费合作钍印製 2. —種製造載負基板的’方法，其使用於製造包含一半導 體昂.片、一密封該半導體晶片的樹脂封裝物、一安置 於連接至母板的樹脂封裝物表面上的樹腊凸出物、一 復蓋在樹脂凸出物表面的電鍍膜以及一將半導體晶片 的一電極電連接至該電鍍貘的導線的半導體裝置，該 載負基板包含可為不溶解電鍍膜之飪刻物質溶液所溶 解並適用於固定該半導體晶片之似板狀金屬基板：_ 安置在相當於樹脂凸出物之金屬基板位置並具有一底 部表面和/或側表面（其係為崎嶇）的凹槽：以及一連續 復蓋在凹褙底部表面及側表面並具有相當於該底部表 18 本紙張尺度適用中國a家標準（CNS)A4蜣格（210 X 297公« > 4 410 62 as B8 C8 -----D8 六、申請專利範圍 面及側表面之表面形狀的表面形狀的電鍍膜，該方法 包含的步驟為： 形成一蝕刻光阻層於金屬基板的二個表面上： 將該金屬基板表面之一上的姓刻光阻層刻劃，而 形成一具有一開σ (在相當於該樹脂凸出物的位置）以 及部分的蝕刻光阻層以似島狀殘留於該開口中的光阻 ‘圖案5 蚀刻該金屬基板’使姓刻基於該似爲狀蚀刻光阻 層的存在而在該開不均勻地進行，以及藉此形成 一具有一側表面與一崎嶇底部表面（在光阻困案之開口 的位置）的凹槽：以及 形成一連續復蓋在凹槽底部表面及側表面並具有 相當於該底部表面及側表面之表面形狀的表面形狀的 電鍍膜。 3. 如申請專利範圍第2項之製造載負基板的方法，其中將 該蝕刻.光阻層刻劃的步驟包含一個形成該具有崎嶇周 邊的開口的步驟’且將該金屬基板蝕刻的步驟包含一 個形成一具有崎喂側表面（相當於開口的縱深）與該崎 嶇底部表面之凹槽的步驟。 4. 如申請專利範圍第2或3項之製造載負基板的方法，其 中該似島狀蝕刻光阻層具有似長方形框狀。 5_ —種製造載負基板的方法，其適用於製造包含一半等 體晶片'、一密封該半導艎晶片的樹脂封裝物、一安置 於連接至母板的樹脂封裝物表面上的樹脂凸出物、一 本紙張尺度過用t國困家標準（CNS)A4蚬樁（210 X 297公« ) 19 --- I —--I I I- « ---— II--^---------線 (锖先閱讀背面之沒意事項再填寫本頁) A8B8C8D8 441062 六、申請專利範圍 (請先®讀背面之沒意事項再填寫本頁) 復蓋在樹脂凸出物表面的電鍍膜以及一將半導體晶片 的一電極電連接至該電菊Γ膜的導線的半導體裝置；該 載負基板包含可為不溶解電鍍膜之飪刻物質溶液所溶 解並適用於固定該半導體晶片之似板狀金屬基板：一 安置在相當於樹脂凸出物之金屬基板位置並具有一底 部表面和/或側表面（其係為崎嶇）的凹槽；以及一連續 復蓋在凹槽底部表面及側表面並具有相當於該底部表 面及側表面之表面形狀的表面形狀的電鍍膜，該方法 包含的步驟為： 形成一蝕刻光阻層於金屬基板的二個表面上； 將該金屬基板表面之一上的蝕刻光阻層刻劃，而 形成一具有崎嶇縱深的開口在相當於樹脂凸出物的位 置： 蝕刻該金屬基板，而形成一具有一底部表面及一 崎嶇側表面（相當於蘭口的縱深）的凹槽在相當於光阻 圖案開口之金屬基板的位置：以及 經濟部智慧財產局員工消f合作社印製 形成一連續復蓋在凹槽底部表面及側表面並具有 相當於該側表面及底部表面之表面形狀的表面形狀的 電鍍膜3 6. —種製造半導體裝置的方法，該半導體裝置包含一半 導體晶片、一密封該半導體晶片的樹脂封裝物、一安 置於連接至母板的樹脂封裝物表面上的樹脂凸出物、 一復蓋在樹脂凸出物表面的電鍍膜以及一將半導體晶 片的一電極電連接至該電鍍獏的導線，該方法包含的 20 本纸張尺度適用<1*1國家櫺翠（〇^)八4規烙（210>«297公爱） 4 2 6 ο A8B8C808 六、申請專利範圍 步驟為： 製儀一載負基板，其包含可為不溶解電鍵膜之飪 刻物質容液所溶解並適用於固定該半導體晶片之似板 狀金屬基板；一安置在相當於樹脂凸出物之金屬基板 位置並具有一底部表面和/或側表面（其係為崎嶇）的凹 稽；以及一連續復蓋在凹槽底部表面及側表面並具有 相當於該底部表面及側表面之表面形狀的表面形狀的 電鍍膜； 將該半導艎晶片固定於載負基板上； 將該半導技晶片的電極以藉導線接合的導線電連 接至載負基板的凹槽的電鍍膜； 藉樹脂成形形成一樹脂封裝物，用於將載負基板 上之該半導雔晶片及導線密封，該樹脂封裝物包含藉 電鍍膜固定於金屬基板凹櫓的凸出物並具有相當於凹 槽表面形狀的表面形狀；以及 將該金屬基板溶解並移除，而留下復蓋未被移除 之樹脂凸出物表面的電鍍膜3 --I----1------••裝--------訂---------線 (請先M讀背面之>i意事項再填寫本頁) 竣濟邨智慧財冱局MK工消费合作社印製 21 本紙張尺度通用+ S國菜標準（CNS)A4邋格（2W » 297公
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