TW302529B - The semiconductor device & its manufacturing method - Google Patents

The semiconductor device & its manufacturing method Download PDF

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Publication number
TW302529B
TW302529B TW085107011A TW85107011A TW302529B TW 302529 B TW302529 B TW 302529B TW 085107011 A TW085107011 A TW 085107011A TW 85107011 A TW85107011 A TW 85107011A TW 302529 B TW302529 B TW 302529B
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Taiwan
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film
resin
layer
gold
patent application
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TW085107011A
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Chinese (zh)
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Yoshiyuki Kometa
Kazuto Tsuji
Masaichi Orishige
Takashi Nomoto
Eiji Sekota
Masanori Onodera
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Fujitsu Ltd
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A semiconductor device includes: Semiconductor element; Resin seal to seal the semiconductor device; Resin jut to jut on side of the resin seal; Metal film set on resin jut; Connecting mechanism for electricity connection with electrode pad and metal film.

Description

經濟部中央標準局員工消费合作社印製 302529 a7 B7五、發明説明（1 ) 〔發明所靨之技術領域〕 本發明係關於一種半導趙装置及其製造方法* K及引 線框及其製造方法*特別鼷於既無引線表面包装型且樹脂 密封型之半専强裝置及其製造方法，Μ及為製造此半導》 裝置而使用的引線框及其製造方法。 近嫌年，因電子機器之小型化而設在樹脂密封型半導 雔装置之引線的間距趲向於變小。因此，/在樹脂密封型半 導»装置方面，要求新的構造及製造方法。 〔習知技術〕 第52圖及第5 3圈係顬示習知樹脂密封型半導體裝置之 斷面画。於第52圈中，1為樹脂；2為半導體元件；3為 外引線；4為接合線；5為横墊。此半導«装置傜稱呼 SS0P(Shrink Small Outoline Package)之封装構造者， 其外引線3被彎曲成海鷗冀狀且被安裝在基板。 又，於第53麵中，1為樹脂；2為半専體元件；4為 接合媒；6為焊球；7係用來装載晶片2的装載基片。此 半専«装置係稱呼B6A(Ball Grid Array)之封裝構造者； 安裝在基片之端子部分則由焊球6所形成。 〔發明欲解決之課題〕 然而，如依第52圈所示之SS0P型半導體装置，從樹脂 1内所示之内引線8至外引線3之包圃部分9之面積、或 外線3本身$占住之面積頗大*存在著安装面積變大等之 問颳。 又·如依第53圖所示之BGA型半導體裝置，在使用裝 本紙張尺度逋用中國國家標準（CNS ) A4規格（210X 297公釐）Printed by Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 302529 a7 B7 V. Description of the invention (1) [Technical field of the invention] The present invention relates to a semiconducting Zhao device and its manufacturing method * K and lead frame and its manufacturing method * Specially applicable to the semi-strength device without lead surface packaging type and resin sealing type and its manufacturing method, M and the lead frame used for manufacturing this semiconductor device and its manufacturing method. In recent years, due to the miniaturization of electronic equipment, the pitch of lead wires provided in resin-sealed semiconductor devices has tended to become smaller. Therefore, new construction and manufacturing methods are required for the resin-sealed semiconductor device. [Conventional Technology] Figure 52 and the fifth and third circles show cross-sectional drawings of conventional resin-sealed semiconductor devices. In circle 52, 1 is resin; 2 is a semiconductor element; 3 is an external lead; 4 is a bonding wire; 5 is a horizontal pad. This semiconducting device is called SS0P (Shrink Small Outoline Package), and its outer lead 3 is bent into a seagull shape and is mounted on the substrate. In addition, in the 53rd plane, 1 is resin; 2 is a half-component; 4 is a bonding medium; 6 is a solder ball; and 7 is a mounting substrate for mounting a wafer 2. The device is a package structure called B6A (Ball Grid Array); the terminal part mounted on the substrate is formed by solder balls 6. [Problems to be Solved by the Invention] However, as with the SS0P type semiconductor device shown in the 52nd circle, the area from the inner lead 8 shown in the resin 1 to the covered portion 9 of the outer lead 3, or the outer line 3 itself The living area is quite large * There are problems such as the installation area becoming larger. In addition, as shown in Figure 53, the BGA type semiconductor device uses the Chinese National Standard (CNS) A4 standard (210X 297mm) in the size of the paper used.

A7 B7 五'發明説明（2 ) 經濟部中央標準局員工消费合作社印裝 載基片7方面*存在著成本變高之間題。 本發明係鑑於上述缺點而創作者，本發明之目的係在 於提供一種安裝面稹小、成本低、且可謀求小型化的樹脂 密封型半導體裝置及其製造方法•以及在製造上述半導體 装置時使用的引線框及其製造方法。 〔用Μ解決課題之手段〕 上述課薄*可轅著採取以下手段來解決。 申請專利範圃第1項之發明為一半導«裝置，其特戡 在於包含有： 半導體元件； 樹脂封裝•係用Μ密封該半導«元件； 樹脂突起•係突出形成在該樹脂封裝之安装側面； 金饜膜，係設置在該樹脂突起；及 連接機構，係用以霣接前述半導«元件上之《極墊片 與前述金颺膜。 又，依申謫専利範園第2項所述之發明， 於前述申誚專利範園第1項所述之半導«裝置中* 由銀（Ag)及鈀（Pd)中之一個來形成前述金羼膜。 又*依申誚專利範園第3項所述之發明· 於前述申請専利範園第1項所述之半導«装置中， 前述金颶膜•係由從外曆起鈀（Pd)層及金（Au)Jf之二 暦所形成。 又*依申請專利範_第4項所述之發明， 於前述申請專利範圈第1項所述之半導嫌裝置中， 本紙張尺度逋用中國國家標準（CNS ) Μ規格（210X29?公釐） (請先閱讀背面之注意事項再填寫本頁) 、-° 經濟部中央標準局貝工消费合作社印裝 3u25^9 at __B7_五、發明説明（3 ) 前述金属膜係由 從外層起金（Au)曆、鎳（Hi)雇、金（Au)庸之三磨膜， 從外層起鈀（Pd)層、鎳（Ni)廣、鈀（Pd)«之三靥膜· 從外層起金（Au)曆、鈀（Pd)雇、金（Au)靥之三靥膜， 從外曆起焊錫曆、鎳（Ni)贗、金（Au)餍之三曆膜；及 從外曆起焊錫層、辣（Hi)餍、鈀（Pd)曆之三層膜 中之一個三層膜所形成。 又*依申請專利範画第5項所述之發明· 於前述申請專利範圃第1項所述之半専體装置中， 前述金颶膜係由 從外層起焊錫雇、鎳（Ni)靥、鈀（Pd)«、金（Au)曆之 四層膜，及 從外曆起鈀（Pd)層、鎳（Ni)層、鈀（Pd)曆、金（Au)層 之四層膜中之一個四曆瞑所形成。 又，申請專利範画第6項所述之發明為， 一種製造申請専利範圃第1項乃至第5項之任一項所 逑之半導體裝置時使用之引媒框者，包含有： 凹部，其係形成在與前述樹脂突起對應之位置；及 申請專利範圍第1項乃至第5項之任一項所述之金屬 膜*其係形成在該凹部。 又，依申請專利範牖第7項所述之發明， 提供一種前述申請専利範圍第6項所述之引線框之製 造方法，包含有： 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央樣準局貝工消费合作社印製 B7五、發明説明（4 ) 保護膜塗佈工程-一將蝕刻保護膜塗佈於基材兩面； 保護膜鼷案形成工程一一除去一對應於前述蝕刻保護 膜之凹部形成位置的部位，Μ形成一規定保護膜圔案； 蝕刻工程- 一於前述基片之前述凹部形成位置，形成 凹部； 金靥膜形成工程-一於該蝕刻工程所形成之凹部内， 形成申請專利範画第1項乃至第11項之任一項所述之金厲 祺；及 保護膜除去工程--除去前述蝕刻保護膜。 又，依申請專利範圃第8項所述之發明， 於前述申謫專利範園第7項所述之引線框之製造方法 中， 前述金靥膜形成工程係使用霣鍍法來形成前述金羼膿 ;同時 前述保護膜圓案形成工程也用來除去一對應於供«部 之位置的前述蝕刻保護膜，該供霣部係連接於一用於前述 霣嫌處理之霣極。 又•依申謫專利範圃第9項所述之發明· 提供一種使用申猜專利範圃第6項所述之引線框的半 導體装置之製造方法*包含有： 元件装載工程--將半導«元件裝載於前述引線框； 連接工程一_«接一形成在前述半導«元件之霣棰墊 ，與一形成在前述引線框之前述金羼膜； 密封工程一一在前逑引線框上形成樹脂Μ形成樹脂封 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐） Α7 Β7 30G529 五、發明説明（5 ) 裝，Μ便密封前述半導體元件；及 分離工程一-從前述引線框分離前述金羼膜及前述樹 脂封裝。 又•依申請專利範園第10項所述之發明， 於前述申請專利範圍第9項所述之半導體装置之製造 方法中， 在前述連接工程•使用媒接合法作為《接前述霣極塑 與前述金屬膜之方法同時* 首先•將電線之一端連接於前述金靥膜，接著從前述 金牖膜引出霣線至前述霄極墊之後*將霣線之另一端部連 接於前述霣極墊。 又，依申請專利範圍第11項所述之發明， 於前述申請專利範圃第9項或第10項所述之半導«裝 置之製造方法中， 在前述分雕工程，從前述引埭框剝下前述樹脂封裝， 藉此予Μ分離。 又，依申請專利範園第12項所述之發明· 於前述申請専利範圍第9項或第10項所述之半専«装 置之製造方法中， 在前述分鐮工程·溶解前述引埭框而留下前述金羼膜 Μ分離前述樹脂封裝。 又，依申誧專利範圃第13項所述之發明· 於前述申讅専利範圃第9項乃至第12項之任一項所述 之半導體裝置之製造方法中， 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐） (請先閱讀背面之-意事項"从寫本頁) -裝· 、-° 經濟部中央標準局員工消費合作社印製 _ 經濟部中央標準局員工消費合作杜印製 A7 B7五、發明説明（6 ) 在前述密封工程，Μ多數個分別獨立的構成*總括起 來形成前述樹脂封裝於前述引線框上之同時， 包含一帶設置工程，其係於前述樹脂封装之形成前、 或形成後•設置用來連结前述多數個樹脂封裝的帶構件。 又，依申請專利範圍第14項所述之發明， 於前述申謫專利範圍第9項乃至第12項之任一項所述 之半導體裝置之製造方法中* 在前述密封工程·Κ由多數個各獨立之連结樹脂部所 連接之構成，總括起來形成前述樹脂封裝於前述引線框上 之同時， 包含連结樹脂除去工程，其係於前述分離工程之實施 後除去前述連结樹脂部。 又，依申謫專利範_第15項之發明，其半導體裝置包 含有： 一半導«元件； 一用來密封該半導败元件之樹脂封裝· 一設置在該樹脂封装之安裝面的金羼及 一用來電接前述半導體元件上之«極墊與萷述金羼膜 之連接機構；其中 前述樹脂封装，至少由上下兩層之樹脂部所構成。 又*依申請専利範園第16項所述之發明· 於前述申請專利範圃第15項所述之半導級装置中， 位置於前述樹脂封裝之最下靥之前述樹脂部*係具有 突出形成在前述安装面之樹脂突起； (請先背面之•注意事項斗蚨寫本頁) ▼裝- 二-* 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 經濟部中央標準局員工消費合作社印製 A7 B7五、發明説明（7 ) 前述金靥膜，係形成在該樹脂突起。 又*依申請專利範圃第17項所述之發明， 於前述申謫專利範围第15項所述之半導«装置中， 前述位置在樹脂封裝最下層之樹脂部.，係由絕緣性樹 脂帶所形成。 上述各手段*係作用如下。 如依申諝專利範圃第1項所述之發明，則 内引線和外引線變成不需要•且•由於可將形成在樹 脂突起之金屬膜當做外部端子安装•所Μ可縮小安装面積 。又，由於在半導《裝置内並未設置引線框，所Μ可謀求 成本之減低。再者*由於樹脂突起及金羼膜可發揮跟BGA 型半導體装置之焊錫突起相等之機能，故可提高安装性。 又*如依申謫專利範園第2項乃至第5項之發明•則 由於將金屬膜作成單層時•將連接櫬構（例如線接合 )之接合性及焊接性均佳之金羼作為金羼膜使用*又，金 羼膜為層合多數曆而成之金屬膜時，將最内曆作成連接櫬 構之接合性良好之金屬，且將最外爾作成接合性及焊接性 均佳之金屬*所Μ可使半導體元件與金饜膜之«接及金羼 基片與安装基片之霣接變成良好。 又，如依申請専利範圍第6項所述之發明，則 可賴僅由凹部及金屬膜所構成之簡軍構造之引媒框* 來製造申請專利範園第1項乃至第5項所述之半導體装S Ο 又·如依申謫専利範園第7項所述之發明，則 (請先閱讀背面之注意事項再填寫本貢) 裝· ,?τ 本紙張尺度適用中國國家榇準（CNS ) Α4規格（210 X 297公釐） 10 經濟部中央標準局員工消費合作社印製 A7 B7_五、發明説明（8 ) 可賴保護膜之塗佈、保謅膜圖案之形成、胜刻金属膜 之形成、及保護膜之除去等之簡單工程•來形成引鎳框。 又·如依申請専利範圃第8項所述之發明，則 由於在保護膜圈案形成工程，也除去對應於供霣部之 位置的触刻保護膜，故可輕易進行供«部之形成。 又·如依申請專利範園第9項所逑之發明，貝IJ 引線之切斷處理、及將引線成形一規定形狀（例如· 海《翼之形狀）之工程變成不需要*可將半導體裝置之製 造工程簡單化。 又*如依申請專利範園第10項所述之發明，則 首先，將電線之一端連接於金羼膜•接著從金靥膜引 出霄線至霣極墊之後將電線之另一端部霣接於霣極墊。即 ，使用所諝倒打之引線接合法，箱此可謀求線圈之低後背 化，從而可跟接著謀求半専趙装置之低後背化。 又，電極墊之配置間跟比金屬膜之配置間距更窄。又 *在處理引線接合時*第一次接合之接合領域，較之第二 次接合領域更廣»。因此，作成對設置間距廣閥之金羼膜 進行第一次接合*並對於設置間距狹窄之霣極墊進行第二 次接合之構成•藉此可進行高密度之線配置。 又•依申請専利範圃第11項之發明，則於分離工程中 從引媒框剝下樹脂封裝，藉此可從引線框軽易分離樹脂封 裝。 又，如依申請專利範園第12項所述之發明•則 於分離工程中，溶解引線框而留下金謳膜以分離樹脂 (請先閲讀背面之-意事項令填寫本頁) •裝. 訂 泉 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -11 - Α7 Β7 經濟部中央標準局員工消費合作杜印製 五、發明説明（9 ) 封裝•«此可確實且輕易從引線框分離樹脂封裝。 又*如依申誚専利範圍第13項及第14項所述之發明* 則 即使在引線框上形成多數個之樹脂封裝*由於各樹脂 封裝係由帶構件或連结樹脂部所連结著，所Μ從引線框分 離也不會個個七零八落地散開•可使分離工程後之樹脂封 装（半導體裝置）之處理變為容易。 又·如依申請專利範園第15項所述之發明•則 由於用至少上下兩曆之樹脂部來構成樹脂封裝•所W 可將各曆樹脂之種頬作成各異。因此，例如，可使用耐热 且高櫬械強度之樹脂來形成供半導體元件裝載之下雇樹脂 部，同時可使用散熱特性良好之樹脂來形成上曆之樹脂部 ，從而可謀求半導髖裝置之特性提高。 又·如依申請專利範圃第16項所述之發明•則 在位置於樹脂封装最下層之樹脂部形成樹脂突起之同 時在此樹脂突起形成金羼膜，藉此使樹脂突起及金鼷瞑發 揮跟BGA型半導艚装置之焊錫突起相等之機能，因此可提 高安装性。 又，如依申請専利範圃第17項所述之發明，則 由於使用絕緣性樹脂帶來形成一位置在樹脂封装最下 層之樹脂部，所以用來形成最下曆之金颺膜（引線框）變 成不需要，可謀求成本之減低。 C發明之實賍形態〕 其次，參照圖式說明有關本發明之實腌形態。第1圈 --：--；-----^衣丨 (請先閎讀背面之•注意事項't4,寫本頁 本紙張尺度適用中國國家標準（CNS〉A4規格（210X297公釐） 12 經濟部中央標準局員工消費合作杜印裝 A7 B7 五、發明説明（10 ) 乃至第3圖係顯示本發明第一實腌例之半導艚装置10。第 1圖係顬示半導體装置10之斷面；第2鼷係顯示半導體装 置10之底面；及第3圓係透視後述樹脂封装的狀態之平面 圖。 有關第一實施例之半導體装置10,大致而言*係由樹 脂封装12、半専«元件11及金靥膜13所構成。半導體元件 11，係於其上面形成有多數個霣棰墊14,且•構成裝載在 元件固定樹脂上。 又*樹脂封裝12·係如後述箱著塑棋成形〔陶器製造 (potting)也可〕例如環氧樹脂來形成者。在其安裝面16 之規定位置，一體形成有樹脂突起17。此樹脂突起之設置 間距為例如0.8 mm左右。 又•形成金靥膜13, K用來覆蓋形成在樹脂封裝12之 樹脂突起。在此金羼膜13與霣極墊14之間，設置有電線18 •藉此金羼膜13與半導體元件11成為霣接構成。又•金羼 膜13之詳细，在方便上，留給後文敘述。 上述所構成之半導體裝置10·並$洱要如習知SS0P之 内引線和外引線，且不痛要用來包園内引線至外引媒之面 積，或外引堞本身之面積，從而可謀求半専體裝置10之小 型化。又•不需要使用如習知BGA之為形成焊球而用的裝 置基片，所Μ可謀求半導體装置10之成本減低。又•樹脂 突起17及金羼膜13可合作發揮跟BGA型半導»装置之焊錫 突起相等之櫬能*所以可提高安装性。 其次，使用第4圈乃至第7圖來說明金臞膜13。各圖 (請先閱读背面之>i意事項\1<寫本頁) 裝- 訂 線 本紙張尺度適用中國國家標準（CNS〉A4規格（210 X297公釐） 13 302529 經濟部中央標準局貝工消費合作衽印製 五、發明説明（11 ) 係將金羼膜13之設置位置附近放大表示之画者。 金屬膜13被設置成可覆蓋樹脂突起之同時，箱霣線18 來«接於半導體元件11。又，此金靨膜13係作為半導«装 置之外部連接端子作用者；當將半導雔装置10安装於安裝 基片（未圖示）時*金鼸膜13則被焊接在實施基片中所形 成的電極部。 此金屬膜13,可用單曆之金羼層來形成*也可作成將 多數之金雇曆曆合形成之構成。第4鼷係用單層之金属曆 來形成金鼷膜13A者；第5圖乃至第7画係將多數個金屬 層層合而成之金属膜13B〜13D者。 又*當理定金靥祺（13A〜13D)之材質時，一如前述， 由於金龎膜13在其内俩連接霣線18之同時在外側對安裝基 片進行焊接，所Μ要求金屬膜13之最內雇具有良好之接合 性，且要求最外曆具有焊接性（以下，將對此金雇膜13所 要求之條件，稱做金鼷膜要求特性）。就滿足此金靨膜要 求特性之材質而言，可考慮以下之事項。 就第4圈所示之單餍金属膜13Α來說，有必要遘定接 合性及焊接性均佳之材質，作為金羼膜13Α之材質。滿足 此條件之材料者，例如有銀（Ag)，或鈀（Pd>。 又，就層合如第5圖所示之外層13B-1與内餍13B-2而 成之二層構造的金羼膜13B來說，作為滿足金羼膜要求特 性之外層13B-1及内曆13B-2之姐合者可為，用鈀（Pd)來形 成外曆13B-1，及用金（AU)來形成外曆13B-2之組合。 又·就如第6圃所示之層合外曆13C-1、中間曆13C-2 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐〉 ，， 請 先 閲 讀 背 1¾ •夯 ί 事Μ ώ 本衣 頁 訂 線 A7 B7 五、發明説明（12 ) 、内靥13C-3而成之三曆構造的金雇膜C來說，可為用金 (Au)來形成外餍13C-卜用練（Ni)來形成中間曆13C-2、用 金（Au)來形成内雇13C-3之組合。 又•就其他組合來說•可為： 用鈀（Pd)來形成外層13C-卜用鎳（Hi)來形成中間曆 13C-2、及用鈀（Pd)來形成内曆13C-3之組合； 用金（Au)來形成外曆13C-卜用鈀（Pd)來形成中間層 13C-2、及用金（Au)來形成内層13C-3之姐合； 用焊錫來形成外層13C-1、用嫌（Ni)來形成中間層、 用金（Au)來形成内層13C-3之組合；或 用焊錫來形成外層、用鎳（Ni)來形成中間«、及用鈀 (Pd)來形成内層13C-3之組合。由上述各组合來構成金鼷 膜13C，藉此來滿足金羼膜要求特性之同時，可藹中間層 13C-2來提高外層13C-1與内層13C-3之接合性。 又*躭層合如第7圈所示之外層13D-1、第一中間暦 13D-2、第二中間餍13D-3、内曆13D-4而成之四層構造之 金羼膜13D來說，可為用焊錫來形成外靥13D-1、用嫌（Ni) 來形成第一中間層13D-2、用鈀（Pd)來形成第二中間層13D -3、用金（Au)來形成内層之組合。 又*就其他組合來說*可為用鈀（Pd)來形成外雇3D-1 、用鎳（1U)來形成第一中間層13D-2、用鈀（Pd)來形成第 二中間層13D-3、用金（Au)來形成内層13D-4之組合。 由上述之組合來構成金雇膜13D»賴此可滿足金屬膜 要求特性之同時，可提高藉助第一及第二中間層13D-2、 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 請先閱讀背面之注意事項寫本頁) -裝. 訂 經濟部中央標準局貝工消費合作社印製 15 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（13 ) 13D-3之外層13D-1與内曆13D-4之接合性。 接著，說明上述第一實疵例之半導«裝S之製造方法 。又，Μ下之說明係提示以層合外層13C-1、中間層13C-2 、内層13C-3而成之三層構造之金羼膜13C為例來說明者。 半導體装置10*係使用第14画所示之引線框20來製造 者。此引線框20,係於導電性金雇基材21形成有多數個凹 部2 2之同時，於此凹部2 2形成有金饜膜13C。凹部2 2之形 成位置係與形成在半導體裝置1Q之樹脂突起之形成位置對 應，又，金属膜13C係形成可供樹脂突起17嵌入之形狀。 又，如後述，引線框20係構成可將多數個半専體装置 10總括起來形成（即，所諝可包装多數個）之構造•因此 在一個金鼷基材21形成有多數個之凹部22及金颶瞑13C ( 請參照第11囫）。又，圈中23係於操作引線框20時供撗子 卡合之模孔者。 在此，說明半導體装置10之製造方法前，先使用第8 _乃至第14·來說明有闞引線框2 0之製造。 當要製造引線框2 0時，首先如第8圔所示，準備由専 電材（例如網）所成之平板狀金羼基材21，於此金羼基材 21之上下兩面塗佈蝕刻保護膜24 (保謅膜塗佈工程）。此 蝕刻保護膜24,例如為一感光性樹脂，係使用旋轉器等來 塗佈成一規定膜厚者。 接著，使用未圓示之屏蔽對蝕刻保護膜24進行曝光處 理，其後進行顯像處理*藉此除去對應於鈾刻保護膜24之 凹部形成位置及棋孔形成位置之部位，Μ形成第9圓所示 本紙張尺度適用中國國家標隼（CNS ) Α4規格（210Χ297公釐） (請先閱逢背面之-注意事項\一 V寫本頁) .裝· ，1Τ 16 經濟部中央標準局員工消費合作社印製 A7 _B7 五、發明説明（14 ) 之保護膜圈案24a (保護膜圖案形成工程）。 又，本實施例也在此保護膜_案形成工程，除去一設 在對應於供電部25形成位置（供霣部形成位置）的部位之 蝕刻保護膜24。又，供電部25，係於後述金屬膜形成工程 ，用來設置電鍍電極之部位者（請參照第11_)。 又*完了保護膜圖案形成工程後，對於形成有保護膜 圈案24a實施独刻處理（蝕刻工程）。依此蝕刻工程，在 凹部形成位置及供霣部形成位置·僅實陁來自金饜基材21 之上面的半鈾刻，而在模孔形成位置則實施兩面蝕刻。又 *若使用銅（Cu)作為金屬基材21之材料時，例如使用氣化 嫌作為蝕刻液。 藉此，如第10圈所示*在金属基材21之凹形成位置形 成凹部2 2之同時，在棋孔形成位置形成棋孔23。又，如第 11_所示，在金屬基材21之供霣部形成位置，形成有凹部 狀之供電部25。此時，由半蝕法所形成之凹部2 2之深度· 可設定在金饜基材21之板厚的約60%左右。 此供霣部25·係分別形成在金屬基材21之長向兩端部 ;由導霣性金羼所材之金羼基材21係在此供霣部25成K出 狀態。因此，將爾鍍用電極設在供電部25,拜此可將一規 定電位外加於金羼基材21。又•第11園（B)係沿第11_ (B) 及第11圖之A-A媒的斷面圖。 又，第11_中用箭形符號B來表示之矩形吠之虛線， 係表示一個半導體裝置1Q之形成領域；於是，如該圖所示 ，在一個金雇基材21癉括地形成有多數個之半導體裝置1〇 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 17 (請先閹讀背面之注意事項>"·寫本頁) •裝· 訂 A7 B7 五、發明説明（15 ) 請. 先 閲 背 ι6 意 事 項 填 5裝 頁 。因此，如將對應於一個半導«装置10之多數個凹部2 2之 組作為1組，則在一個金属基材22中形成有多數組之凹部 22 ° 且說•為了總括起來形成更多之半導體装置10,如第 12圖所示，可在框狀部26形成一透過左右一對之連结部連 结多数個金颺基材21之引線框軍元28。此構成•雖説也有 必要形成供電部25 >但由於多數個金靨基材21係透過連结 部27霄接於框狀部26·因此在框狀部26形成供«部25,薄 此可總括地向多數個金羼基材21供電。 訂 因此，作成如上述之構成•藉此可將半導«装置10之 製造效率更進一步提升*同時較之在各金靥基材21形成供 電部25,更可將保護膜圔案形成工程及蝕刻工程簡單化。 一如上述，實施蝕刻工程後*接著實施金雇膜形成工 程以形成金屬膜13C。在本實施例方面，其金屬膜13C之形 成乃使用霣鍍法來達成，並於前述供電部25設置電鍍用電 極之同時，將金觸基材21浸漬於«鍍槽，進行霣場霣鍍。 經濟部中央標準局貝工消費合作社印製 本寅施例之金屬膜13C，為一靥合外層13C-1、中間曆 13C-2及内曆13C-3而成之三層構造，所Μ須對各曆分別進 行霣鍍處理。具體言之*如使用金（Au)作為外» 13C-1、 使用鈀（Pd)作為中間層13C-2、使用金（Au)作為内靥13C-3 時，首先進行鍍金Μ成為內層13C-3·接著進行嫌鈀Μ成 為中間層13C-2 *最後進行鍍金Μ成為外靥13C-1。構成此 金靨膜13C之各曆13C-1〜13C-3之厚度，可藕著控制霣鍍 時間來任意設定。第13圖係顯示形成有金屬膜13C之金屬 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 經濟部中央標準局員工消费合作社印製 A7 B7 五、發明説明（16) 基材21。 雖然賴著實施上述處理而將金屬膜13C形成在金羼基 材21，但如後述·於分離工程中，從引線框20分離樹脂封 装12時，有必要與樹脂封装12—起從引媒框20脫離金颶基 材21中所形成之金靥膜13C。為此·金羼膜13C被要求具備 某程度之對金羼基材21之分離性。 因此·為了將金靥膜13C形成於凹部2 2前先確保該分 離性，而預先在凹部22内塗佈用來提升導電性焊錫膏等之 分離性的構件，然後在其上部形成金鼷膜13C也可。 又，雖於上述之金羼膜形成工程•說明了使用霣鍍法 來形成金屬膜13C之方法，但金羼膜13C之形成並非受限於 霣鍍法，例如使用蒸鍍法、濺射法等之其他膜形成技術來 形成金羼膜13C也可。 又，由於實腌金鼸膜形成工程時*除了凹部22以外也 在横孔2 3作成使金屬基材21露出外部之構成•所Μ在膜孔 23内也形成有與金屬膜13C同一構成之金屬膜。惟•由於 棋孔2 3係在金臈基材21之定位及處理時要用之孔•所Μ如 上述在棋孔2 3内形成金靥膜也不舍產生不合缠之事。 如上述，待於金鼷膜形成工程將金覼膜13C形成於凹 部22内之後*接著實施用來除去保護腰画案24a (蝕刻保 護膜24)之除去工程•以形成第14圔所示之引埭框2G。依 照上述之引線框20之製造方法，可藉保謅膜之塗佈、保護 膜圆案之形成、蝕刻、金屬膜之形成、及保護膜之除去等 之籣軍工程*來形成引線框20。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本f ) 、τA7 B7 Five'Instructions for Invention (2) 7 aspects of printing and mounting substrates printed by employees' consumer cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs * There is a problem of higher costs. The present invention was created in view of the above shortcomings, and the object of the present invention is to provide a resin-sealed semiconductor device with a small mounting surface, low cost, and miniaturization, and a method for manufacturing the same Lead frame and its manufacturing method. [Methods for solving problems with Μ] The above textbooks * can be solved by the following means. The invention of patent application No. 1 is a semi-conducting «device, which includes: semiconductor components; resin encapsulation • sealing the semiconducting« element with Μ; resin protrusions • protrusion formed in the installation of the resin encapsulation The side; the golden film, which is provided on the resin protrusion; and the connecting mechanism, which is used to connect the "electrode pad" and the golden film on the semi-conducting element. In addition, according to the invention described in item 2 of the Shenfanli Fanyuan, in the semiconducting «device described in item 1 of the aforementioned patent application *, it is formed of one of silver (Ag) and palladium (Pd) The aforementioned Jinluo film. Also * in accordance with the invention described in Item 3 of the Shenfan Patent Park. In the semiconducting «device described in Item 1 of the aforementioned application, the gold hurricane film is composed of a palladium (Pd) layer from the outside. And the gold (Au) Jf's second formation. In addition, according to the invention described in item 4 of the patent application model, in the semi-conducting device described in item 1 of the patent application circle, the paper standard adopts the Chinese National Standard (CNS) M specification (210X29? () Please read the precautions on the back before filling in this page),-° Printed by the Beigong Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 3u25 ^ 9 at __B7_V. Invention description (3) The aforementioned metal film is from the outer layer Gold (Au) calendar, nickel (Hi) hire, gold (Au) mediocre grinding film, from the outer layer of palladium (Pd) layer, nickel (Ni) wide, palladium (Pd) «of the three sacrificial film · from the outer layer of gold (Au) calendar, palladium (Pd) hire, gold (Au) metal oxide film, solder calendar from the foreign calendar, nickel (Ni) pseudo, gold (Au) aluminum calendar film; and solder from the external calendar Layer, spicy (Hi), palladium (Pd) is formed by one of the three-layer film. Also * in accordance with the invention described in item 5 of the patent application model. In the half-body device described in item 1 of the patent application, the gold hurricane film consists of solder from the outer layer and nickel (Ni) alloy , Four layers of palladium (Pd) «, gold (Au), and four layers of palladium (Pd), nickel (Ni), palladium (Pd), and gold (Au) from the external calendar One of the four calendars formed. In addition, the invention described in item 6 of the patent application is a kind of media frame used in manufacturing the semiconductor device claimed in any one of items 1 to 5 of the fan model, including: a recess, It is formed at a position corresponding to the aforementioned resin protrusion; and the metal film described in any one of claims 1 to 5 is formed in the concave portion. In addition, according to the invention described in item 7 of the patent application, a method for manufacturing a lead frame as described in item 6 of the scope of the above application is provided, which includes: The paper standard is applicable to the Chinese National Standard (CNS) A4 specification (210X297 Mm) B7 printed by Beigong Consumer Cooperative of the Central Bureau of Samples and Economics of the Ministry of Economic Affairs 5. Description of the invention (4) Protective film coating process-First, the etching protective film is coated on both sides of the substrate; the protective film formation project is removed one by one A portion corresponding to the formation position of the concave portion of the etching protection film, M forms a prescribed protective film; etching process-a formation of the concave portion at the formation position of the concave portion of the substrate; a film formation process of the gold film-one after the etching In the recessed part formed by the project, Jin Liqi as described in any one of items 1 to 11 of the patent application model is formed; and the protective film removal process-removing the aforementioned etching protective film. In addition, according to the invention described in item 8 of the patent application park, in the method for manufacturing a lead frame described in item 7 of the application for patent application, the gold-membrane film-forming process uses a bead plating method to form the gold At the same time, the aforementioned protective film round forming process is also used to remove the aforementioned etching protective film corresponding to the position of the supply section, the supply section is connected to a corner for the aforementioned treatment. In addition, according to the invention described in item 9 of the patent application for patent application, a method for manufacturing a semiconductor device using the lead frame described in item 6 of the patent application for patent application * includes the following: component loading engineering--will The guide «components are mounted on the aforementioned lead frame; the connection process one« «one-on-one pad formed on the aforementioned semi-conductor« component, and the aforementioned gold film formed on the aforementioned lead frame; the sealing process on the front lead frame Formed on the resin M to form the resin seal paper size is applicable to the Chinese National Standard (CNS) Α4 specifications (210X 297 mm) Α7 Β7 30G529 5. Invention description (5) installed, M will seal the aforementioned semiconductor components; and separation engineering-from The lead frame separates the gold film and the resin package. In addition, according to the invention described in item 10 of the patent application, in the method of manufacturing a semiconductor device described in item 9 of the aforementioned patent application range, in the connection process mentioned above, the use of a media bonding method as the At the same time, the method of the aforementioned metal film * firstly, connects one end of the wire to the gold film, and then draws the wire from the gold film to the pad, then connects the other end of the wire to the pad. In addition, according to the invention described in item 11 of the patent application scope, in the manufacturing method of the semiconducting device described in item 9 or item 10 of the aforementioned patent application, in the above-mentioned divided carving process, the frame is drawn from the above The aforementioned resin package is peeled off to thereby separate M. In addition, according to the invention described in item 12 of the patent application park, in the method for manufacturing the semi-exposure device described in item 9 or item 10 of the aforementioned application scope, in the aforementioned sub-sickle project / dissolution of the aforementioned introduction frame The gold film M is left to separate the resin package. In addition, according to the invention described in item 13 of the patent application, in the method of manufacturing a semiconductor device described in items 9 to 12 of the application, the paper scale is applicable to the country of China Standard (CNS) Α4 specification (210X 297mm) (please read the -Important " from this page first) -installed ·,-° Printed by the Employees Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs _ Central Bureau of Standards of the Ministry of Economic Affairs Employee consumption cooperation Du Printed A7 B7 V. Description of the invention (6) In the aforementioned sealing process, most of the separate structures * collectively form the aforementioned resin package on the aforementioned lead frame, and include a band setting project, which is based on Before or after the formation of the resin package • A belt member for connecting the plurality of resin packages is provided. In addition, according to the invention described in item 14 of the patent application scope, in the method of manufacturing a semiconductor device described in item 9 to item 12 of the aforementioned patent application scope * The structure to which each independent connection resin part is connected collectively forms the resin package on the lead frame, and includes a connection resin removal process that removes the connection resin part after the separation process is performed. In addition, according to the invention of claim 15 of the patent application, the semiconductor device includes: a semi-conducting element; a resin package for sealing the semi-conducting element; and a gold pendant provided on the mounting surface of the resin package And a connection mechanism for electrically connecting the “electrode pad” and the “Yuyujin” film on the semiconductor device; wherein the resin package is composed of at least two layers of resin parts. Also * in accordance with the invention described in item 16 of the application for the fan park. In the semiconductor device described in item 15 of the patent application, the resin part located at the bottom of the resin package * has a protrusion The resin protrusions formed on the aforementioned mounting surface; (please refer to the back of the first note) Dou Fu write this page) ▼ Pack-2-* This paper size is applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) Ministry of Economic Affairs A7 B7 is printed by the Consumer Cooperative of the Central Bureau of Standards. 5. Description of the invention (7) The aforementioned gold film is formed on the resin protrusion. In addition, according to the invention described in item 17 of the patent application, in the semiconducting device described in item 15 of the aforementioned patent application, the aforementioned position is at the lowermost resin part of the resin package. The resin band is formed. The above-mentioned means * function as follows. According to the invention described in item 1 of the patent application, the inner lead and the outer lead become unnecessary • and • since the metal film formed on the resin protrusion can be used as an external terminal for mounting • the mounting area can be reduced. In addition, since no lead frame is provided in the semiconductor device, the cost can be reduced. Furthermore, since the resin protrusions and the gold film can function as the solder protrusions of the BGA type semiconductor device, the mountability can be improved. Also * if according to the inventions in the 2nd to 5th items of the application for patent application, because the metal film is made into a single layer, the gold joint with excellent jointability and weldability of the connection structure (such as wire bonding) is used as gold Use of 羼 膜 * In addition, when the 龼 film is a metal film formed by laminating a large number of layers, the innermost layer is made into a metal with good bonding properties of the connecting structure, and the outermost layer is made into a metal with good bonding and welding * As a result, the connection between the semiconductor element and the gold film and the connection between the gold substrate and the mounting substrate become good. In addition, according to the invention described in item 6 of the scope of application, it is possible to rely on the introduction frame of the simple military structure composed of only the concave portion and the metal film * to apply for the application of the patent garden item 1 to item 5 The semiconductor device S Ο Furthermore, if the invention described in item 7 of the Shenfanli Fanyuan, (please read the precautions on the back before filling in this tribute), the paper size is applicable to the Chinese national standard ( CNS) Α4 specification (210 X 297 mm) 10 A7 B7_5 printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of invention (8) Coating of reliable protective film, formation of protective film pattern, Shengke metal Simple process of film formation, removal of protective film, etc. • To form nickel frame. In addition, according to the invention described in Article 8 of the application law, because the protective film circle formation process also removes the touch protection film corresponding to the position of the forehead, it is easy to form the forehead . In addition, according to the invention of the patent application, the invention of item 9, the process of cutting the IJ lead wire and forming the lead wire into a prescribed shape (for example, the shape of the sea wing) becomes unnecessary * The semiconductor device can be changed The manufacturing process is simplified. And * if according to the invention described in item 10 of the patent application park, first, connect one end of the wire to the gold film. Then, lead the wire from the gold film to the pad, and then connect the other end of the wire. Yu Fengji pad. In other words, by using the wire bonding method of the reverse hit, the coil can be lowered, so that the lower back of the semi-zhao device can be subsequently sought. In addition, the spacing between the electrode pads is narrower than that of the metal film. And * when dealing with wire bonding * the first bonding area is wider than the second bonding area ». For this reason, the first joint * of the gold-membrane membranes with wide-pitch valves installed and the second joint of the pads with narrow-pitch installations were constructed. This enables high-density wire layout. In addition, according to the invention of application No. 11 of the application, the resin package is peeled off from the lead frame in the separation process, so that the resin package can be easily separated from the lead frame. In addition, if the invention described in item 12 of the patent application park is applied • In the separation process, the lead frame is dissolved to leave the gold film to separate the resin (please read the back-the order to fill out this page) . The size of the spring paper is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -11-Α7 Β7 Employee's consumer cooperation with the Central Bureau of Standards of the Ministry of Economic Affairs. Du printed five. Description of invention (9) Encapsulation And easily separate the resin package from the lead frame. In addition, if the inventions described in Item 13 and Item 14 of the scope of the application are established *, even if a large number of resin packages are formed on the lead frame * Because each resin package is connected by a belt member or a connecting resin part As a result, the separation from the lead frame will not be scattered one by one. It can make the handling of the resin package (semiconductor device) after the separation process easy. In addition, according to the invention described in item 15 of the patent application garden, since the resin package is formed by using at least two upper and lower calendar parts, the resin types of each calendar can be made different. Therefore, for example, a heat-resistant and high-strength resin can be used to form the resin portion for mounting the semiconductor element, and a resin with good heat dissipation characteristics can be used to form the resin portion of the previous calendar, so that a semi-conductive hip device can be sought The characteristics are improved. In addition, according to the invention described in Item 16 of the patent application, a resin protrusion is formed at the lowermost resin portion of the resin package, and a gold film is formed on the resin protrusion, thereby making the resin protrusion and the gold ridge It exerts the same function as the solder bumps of the BGA type semiconducting stern device, so it can improve the mountability. In addition, according to the invention described in Article 17 of the application, the insulating resin tape is used to form a resin portion located at the lowermost layer of the resin package, so it is used to form the lowermost gold film (lead frame ) Becomes unnecessary, and cost reduction can be sought. C. Form of the real quill of the invention] Next, the actual pickled form of the present invention will be described with reference to the drawings. Circle 1-:-; ----- ^ Clothes 丨 (please read the back of the first note * t4, write this page. The paper size is applicable to the Chinese national standard (CNS> A4 specification (210X297 mm) 12 Employee Consumer Cooperation Duo Printing A7 B7 of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (10) and even Figure 3 shows the semiconducting stern device 10 of the first example of the invention. Figure 1 shows the semiconductor device 10 The second cross section shows the bottom surface of the semiconductor device 10; and the third circle is a plan view showing the state of the resin package described later. The semiconductor device 10 of the first embodiment is roughly composed of the resin package 12, half «The component 11 and the gold film 13 are formed. The semiconductor component 11 is formed with a large number of pads 14 formed on it, and the component is mounted on the component fixing resin. The resin package 12 is packaged as described later Plastic chess forming (potting) is also possible, such as epoxy resin. At a predetermined position on the mounting surface 16, a resin protrusion 17 is integrally formed. The pitch of this resin protrusion is, for example, about 0.8 mm. Forming gold film 13, K is used to cover the resin seal formed Install the resin protrusions of 12. Between this gold film 13 and the pad 14, there is a wire 18 • By this the gold film 13 and the semiconductor element 11 are connected to each other. Also • The details of the gold film 13 For convenience, it will be described later. The semiconductor device 10 constructed in the above shall be the inner lead and the outer lead of SS0P as conventionally known, and it shall be used to cover the area from the inner lead to the outer lead medium, or The area of the castellation itself is introduced, so that the miniaturization of the half-body device 10 can be achieved. Also, it is not necessary to use a device substrate for forming solder balls as conventionally known BGA, so the cost of the semiconductor device 10 can be reduced . • The resin protrusion 17 and the gold film 13 can cooperate to achieve the same performance as the solder protrusion of the BGA type semi-conductor »device *, so that the installability can be improved. Secondly, use the fourth circle and even the seventh figure to illustrate the gold film 13. Each picture (please read the "I notices \ 1 < write this page" on the back) Binding-the paper size of the book is applicable to the Chinese National Standard (CNS> A4 specification (210 X297 mm) 13 302529 Central Standard of the Ministry of Economic Affairs Printed by the Bureau Cooperative Consumer Cooperation V. Description of Invention (11) Department of General Jin Yi An enlarged drawing near the location where the film 13 is installed. While the metal film 13 is arranged to cover the resin protrusions, the box wire 18 is «connected to the semiconductor element 11. Furthermore, this gold film 13 is used as a semiconducting device» The role of the external connection terminal; when the semiconductor device 10 is mounted on a mounting substrate (not shown) * The gold film 13 is welded to the electrode portion formed in the implementation substrate. This metal film 13 is available The golden calendar layer of a single calendar can be formed * and can also be formed by combining the majority of golden calendars. The fourth arch is formed by using a single layer of metal to form the golden arch film 13A; the fifth picture and even the seventh painting are the majority The metal films 13B ~ 13D formed by laminating two metal layers. And * When the material of Jin Weiqi (13A ~ 13D) is determined, as mentioned above, since the gold pinch film 13 is connected to the inner wire 18 while the outer side is soldered to the mounting substrate, the metal film 13 is required. The most internal employment has good bonding and requires the most external experience to have weldability (hereinafter, the conditions required for this gold employment film 13 will be referred to as the required characteristics of the gold film). As for the material that satisfies the characteristics of this gold film, the following items can be considered. As for the single-layer metal film 13A shown in the fourth circle, it is necessary to determine a material with excellent bonding properties and weldability as the material of the gold film 13A. The material that satisfies this condition is, for example, silver (Ag) or palladium (Pd>. Furthermore, the two-layer structure of gold formed by laminating the outer layer 13B-1 and the inner layer 13B-2 as shown in Figure 5 For the film 13B, as the sister of the outer layer 13B-1 and the inner calendar 13B-2, which meet the required characteristics of the gold film, the outer calendar 13B-1 can be formed with palladium (Pd) and gold (AU) To form a combination of external calendar 13B-2. Also, as shown in the sixth garden, laminated external calendar 13C-1, intermediate calendar 13C-2 This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm 〉, Please read the back 1¾ • Ramming Μ ώ This clothing page is lined A7 B7 V. Description of the invention (12), the three-layer structure of the golden hire film C made of 13C-3, it can be Use gold (Au) to form the outer 13C-Bu use Lian (Ni) to form the middle calendar 13C-2, and use gold (Au) to form the internal hire 13C-3. Also • For other combinations • can be : Use palladium (Pd) to form the outer layer 13C-use nickel (Hi) to form the middle calendar 13C-2, and palladium (Pd) to form the inner calendar 13C-3 combination; use gold (Au) to form the outer calendar 13C- Bu uses palladium (Pd) to form the intermediate layer 13C-2, and Use gold (Au) to form the inner layer 13C-3; use solder to form the outer layer 13C-1; use (Ni) to form the middle layer; use gold (Au) to form the inner layer 13C-3; or use The combination of solder to form the outer layer, nickel (Ni) to form the middle, and palladium (Pd) to form the inner layer 13C-3. The gold film 13C is formed from the above combinations to meet the required characteristics of the gold film At the same time, the middle layer 13C-2 can be used to improve the adhesion between the outer layer 13C-1 and the inner layer 13C-3. Also, the outer layer 13D-1, the first middle ring 13D-2, etc. are laminated as shown in the seventh circle The second intermediate layer 13D-3 and the internal calendar 13D-4 are formed of a four-layer gold film 13D. For example, the outer layer 13D-1 can be formed by solder, and the first intermediate layer can be formed by nickel (Ni). 13D-2, using palladium (Pd) to form the second intermediate layer 13D -3, using gold (Au) to form the inner layer combination. And * for other combinations * may use palladium (Pd) to form the hired 3D -1, a combination of nickel (1U) to form the first intermediate layer 13D-2, palladium (Pd) to form the second intermediate layer 13D-3, and gold (Au) to form the inner layer 13D-4. Combining to form a golden film 13D At the same time as the required characteristics of the metal film, it can be improved with the help of the first and second intermediate layers 13D-2. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). Please read the notes on the back to write this page)- Printed and ordered. Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. Printed A7 B7 by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy. V. Description of the Invention (13) 13D-3 The outer layer 13D-1 and the internal calendar 13D-4 are joined Sex. Next, a description will be given of the manufacturing method of the semi-conductor "S" installed in the above-mentioned first actual defect example. In addition, the description under Μ is for suggesting that the three-layer structured gold film 13C formed by laminating the outer layer 13C-1, the intermediate layer 13C-2, and the inner layer 13C-3 is used as an example. The semiconductor device 10 * is manufactured using the lead frame 20 shown in the 14th picture. In the lead frame 20, a plurality of concave portions 22 are formed on the conductive gold substrate 21, and a gold film 13C is formed on the concave portions 22. The formation position of the recess 22 corresponds to the formation position of the resin protrusion formed in the semiconductor device 1Q, and the metal film 13C is formed in a shape into which the resin protrusion 17 can be embedded. In addition, as will be described later, the lead frame 20 is a structure that can collectively form a plurality of half-body devices 10 (that is, a plurality of packages can be packed). Therefore, a plurality of recesses 22 and gold are formed on one gold base material 21 Hurricane 13C (please refer to the 11th 囫). In addition, the circle 23 is a die hole for engaging the snap when the lead frame 20 is operated. Here, before describing the manufacturing method of the semiconductor device 10, the manufacturing of the lead frame 20 with a blank frame will be described using the 8th to 14th. When the lead frame 20 is to be manufactured, first, as shown in the eighth image, a flat-shaped gold substrate 21 made of an electrical material (such as a mesh) is prepared, and an etching protection film 24 (coating is coated on the upper and lower sides of the gold substrate 21) The film coating project). The etching protection film 24 is, for example, a photosensitive resin, which is applied to a predetermined film thickness using a spinner or the like. Next, the etching protection film 24 is exposed to light using a mask not shown, followed by a development process * thereby removing the portions corresponding to the formation positions of the concave portions and the formation positions of the chess holes of the uranium engraving protection film 24, forming the ninth The size of the paper shown in the circle is applicable to the Chinese National Standard Falcon (CNS) Α4 specification (210Χ297 mm) (please read the back of the first-notes \ I write this page). Installed, 1T 16 employees of the Central Standards Bureau of the Ministry of Economic Affairs Printed by consumer cooperatives A7 _B7 V. Invention description (14) Protective film ring case 24a (protective film pattern formation project). In addition, in this embodiment, in this protective film formation process, an etching protective film 24 provided at a position corresponding to the formation position of the power supply portion 25 (the formation position of the corner portion) is removed. In addition, the power supply unit 25 is a part of the metal film forming process to be described later, and is used to provide a part of the plating electrode (refer to section 11_). After the completion of the protective film pattern formation process, a single engraving process (etching process) is performed on the case 24a where the protective film circle is formed. According to this etching process, only the semi-uranium engraving from the upper surface of the gold substrate 21 is formed at the recessed portion forming position and the supplying portion forming position, and the both sides are etched at the die hole forming position. In addition, when copper (Cu) is used as the material of the metal substrate 21, for example, vaporization is used as an etching solution. Thereby, as shown in the 10th circle *, while the concave portion 22 is formed at the concave formation position of the metal base 21, the chess hole 23 is formed at the chess hole formation position. Further, as shown in No. 11_, a power supply portion 25 in the shape of a recess is formed at the position where the supply portion of the metal base 21 is formed. At this time, the depth of the concave portion 22 formed by the half-etching method can be set to about 60% of the thickness of the gold substrate 21. The feeding parts 25 · are formed at both ends of the metal substrate 21 in the longitudinal direction; the gold substrate 21 made of the conductive gold jelly is used for the feeding part 25 into a K-out state. Therefore, the electrode for Er plating is provided in the power supply section 25, whereby a predetermined potential can be applied to the gold base material 21. Also, the 11th garden (B) is a cross-sectional view along the A-A medium in the 11th (B) and 11th figures. In addition, the dotted line of the rectangular bark represented by the arrow B in the 11_ indicates the formation area of a semiconductor device 1Q; therefore, as shown in the figure, a large number of substrates 21 are formed on a gold substrate 21 A piece of semiconductor device 10. The paper size is compliant with Chinese National Standard (CNS) A4 specification (210X297mm) 17 (Please read the notes on the back > " · write this page) • Install · Order A7 B7 5. Description of the invention (15) Please. Read the ι6 notes and fill in 5 pages. Therefore, if the group of a plurality of recesses 2 2 corresponding to a semiconductor device 10 is regarded as a group, multiple sets of recesses 22 ° are formed in one metal substrate 22 and it is said that more semiconductors are formed in order In the device 10, as shown in FIG. 12, a lead frame element 28 may be formed in the frame-shaped portion 26 to connect a plurality of gold-yang substrates 21 through a pair of left and right connecting portions. This structure • Although it is also necessary to form the power supply section 25 > However, since most of the gold-tipped base material 21 is connected to the frame-shaped section 26 through the connection section 27, the frame-shaped section 26 is formed with a supply section 25, which can be summarized as thin The ground supplies power to the plurality of Jinyong substrates 21. Therefore, the composition as described above can be made. With this, the manufacturing efficiency of the semiconductor device 10 can be further improved * At the same time, the protective film can be formed and etched more than the power supply portion 25 is formed on each of the gold substrates 21 simplify. As described above, after performing the etching process *, a gold film formation process is then performed to form the metal film 13C. In this embodiment, the formation of the metal film 13C is achieved by using the 霣 plating method, and while the electrode for electroplating is provided in the power supply section 25, the gold contact base material 21 is immersed in the «plating bath to perform 霣 场 霜 難. The metal film 13C printed by Benyong Co., Ltd. of the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs is a three-layer structure formed by combining an outer layer 13C-1, a middle calendar 13C-2, and an inner calendar 13C-3. Engrave each calendar separately. Specifically, if gold (Au) is used as the outer layer »13C-1, palladium (Pd) is used as the intermediate layer 13C-2, and gold (Au) is used as the inner layer 13C-3, gold plating M is first made into the inner layer 13C -3 · Next, palladium M is made into the intermediate layer 13C-2 * Finally, gold plating M is made into the outer layer 13C-1. The thickness of each calendar 13C-1 to 13C-3 constituting this gold film 13C can be arbitrarily set by controlling the time of plating. Figure 13 shows that the size of the metal paper on which the metal film 13C is formed is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). The A7 B7 is printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. Description of the invention (16) twenty one. Although the metal film 13C is formed on the gold base 21 by performing the above process, as described later, in the separation process, when the resin package 12 is separated from the lead frame 20, it is necessary to separate from the resin frame 12 together with the resin package 12 The gold film 13C formed in the gold hurricane substrate 21. For this reason, the Jinyong film 13C is required to have a certain degree of separability with respect to the Jinyong substrate 21. Therefore, in order to ensure the separability before forming the gold-thorium film 13C in the concave portion 22, a member for improving the separability of a conductive solder paste or the like is applied in the concave portion 22 in advance, and then a gold film is formed on the upper portion 13C is also available. In addition, although the above-mentioned gold film formation process has described the method of forming the metal film 13C using the gold plating method, the formation of the gold film 13C is not limited to the gold plating method, such as the vapor deposition method and the sputtering method It is also possible to form the gold film 13C by other film forming techniques. In addition, during the formation process of the solid-laminated gold mule film * In addition to the concave portion 22, the lateral hole 23 is also configured to expose the metal substrate 21 to the outside. Therefore, the same structure as the metal film 13C is also formed in the film hole 23 Metal film. However, since the chess hole 23 is a hole to be used for positioning and processing the gold substrate 21, as described above, the formation of a gold film in the chess hole 23 does not cause any disentanglement. As described above, after the gold film formation process has formed the gold film 13C in the concave portion 22 * Then, the removal process for removing the protective waist painting 24a (etching protection film 24) is carried out. Introduce the 2G box. According to the manufacturing method of the lead frame 20 described above, the lead frame 20 can be formed by the military engineering * of coating the protective film, forming the protective film round, etching, forming the metal film, and removing the protective film. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) (please read the precautions on the back before filling in this f), τ

A7 B7 五、發明説明（17 ) 其次*使用由上述之方法所製成之引線框20,參照第 15圖乃至第28國來說明有闞半導®装置10之製造方法。 當要製造半専體装置10時，如第15圈所示•於引嬢框 2 0之規定元件裝載位置塗佈元件固定樹脂15之同時，在元 件固定樹脂15之上部装載半専«元件（元件裝載工程）。 由於元件固定樹脂15具有絕緣性同時可做黏合劑作用•所 半導體元件11變成箱元件固定樹脂15之黏合力而装載在引 線框2Q上之狀態。 當終了元件装載工程後|將引線框2 0安裝在線接合裝 置，接著，如第16圖所示，將電線18設在引線框20中所形 成之金屬膜13C (具雔言之，內雇13C-3)與形成在半導髖 元件11之霣極墊14間，Μ轚接半導«元件11與金钃膜13C («接工程）。 當將此電線18線接合於電極墊14與金屬膜13C間時， 依第16圈之例*乃採用了先將電媒18之一端接合於霣極墊 14 (第一次接合），而後將罨線18之另一端接合於金羼膜 13C (第二次接合）之方法。 經濟部中央標準局員工消費合作社印製 然而，如第17圖所示，先將電線18之一端連接於金雇 膜13C，接著從金属膜13C拉出霣線18至霄極垫14後，將霣 線18之另一端部連接於電棰墊14也可。 如此，由於使用「先將電線18之一端連接於金羼膜13C ，然後將電線18之另一端部連接於電棰14j的所謂f打線 接合法，所Μ可謀求線圈之低後背化•從而可謀求半導體 裝置10之低後背化。 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ 297公釐） 20 經濟部中央標隼局員工消費合作社印製 A7 B7 五、發明説明（18 ) 又，一般而言，霣極垫14之設置間距比金羼膜13C之 設置間距較窄•並在線接合處理時第一次接合之接合領域 比第二次接合之接合領域較窄。因此，對設置間距廣闊之 金靨膜13C施行第一次接合，而對設置間距狹窄之霄極墊 14則施行第二次接合，藉此可進行高密度的霣線18之設置 〇 當上述之連接工程完了後，接著形成樹脂2 9M便將半 導體元件密封於引線框2Q上，並實施用來形成樹脂封装12 之密封工程。在本實施例•雖就塑横成形樹脂封裝12之方 法作說明，但箱接合來形成樹脂封装12也可。 第18_係顯示剛將完成連接工程之引線框20裝入横製 金雇模以模製樹脂29後之狀態的概略構成圔。其中· 30為 剩餘物；31為流道；32為澆口。如該圖所示•樹脂封装12 係總括地多數個形成在引線框20。又，期棋製後·形成多 數個之各樹脂封装12·係形成薄存在於澆口 32之樹脂29 ( Μ下稱做澆口內樹脂）來連结之狀態。 第19園，係將對應於一個半専髑装置的樹脂封裝12放 大顬示的圔。如該圔所示*樹脂29係藏一形成在棋製金屬 棋（上横）之棋六（未予匾示）成形於一規定形狀之同時 *由引埭框20發揮下横之櫬能；而凹部22之内部（具體言 之，金雇膜13C之内部）也填充有樹脂29*形成樹脂突起 27。在此狀態下*樹脂封裝12則形成添附於引線框20之狀 態。 俟如上所述形成了樹脂封装12後，除去各樹脂封装12 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) .裝. 、va 21 經濟部中央標隼局員工消費合作社印製 A7 B7 五 '發明説明（19 ) 間所形成之澆口 32内樹脂、殘存於流道31内之樹脂、及剩 餘物30,則如前所述構成各個獮立的樹脂封装12。而，如 前述，由於各樹脂封装12係形成添附固定在引線框20之狀 態*所Μ儘管成各個獨立之狀態*各樹脂封装12也不會從 引線框20脫離。 俟上述密封工程終了後，接著實施帶設置工程。於帶 設置工程，如第21園所示，將黏合帶等之帶構件33 (附影 線之部分）設置在各個成獨立狀態之各樹脂封装12之上部 Ο 此帶構件33,係作成於底帶之一面塗佈有黏合劑之構 成；又，底帶係由不受下一分離工程中使用的蝕刻液損傷 的材料所形成。如此，用帶構件33來逋结多數個樹脂封装 12之上部，藉此即使從引線框20分離各樹脂封装12，也可 賴帶構件33來限制各個樹脂封裝12之位置。 又，設置此帶構件33之時間，並不受限於樹脂封装12 之形成後，例如在實施密封工程前，預先放在棋製金羼横 内·藉此在形成之時刻用箝構件33來連结多數個樹脂封装 12也可。 俟上述帶設置工程终了後，接著從引線框20分離樹脂 封裝12,實施用來形成半導«裝置10之分離工程。第22鼷 係顬示分離工程。該圓係顯示，使引媒框20浸漬於蝕刻液 溶解•藉此使樹脂封裝12從引線框20分離之方法。 在此分離工程所用之蝕刻液，係選定具有值溶解引埭 框2 0但不溶解金羼膜13C之性霣的蝕刻液。因此，完全溶 本紙張尺度適用中國國家標準（CNS〉Α4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) -裝. 訂 22 經濟部中央標準局員工消费合作社印製 Α7 Β7 五、發明説明（20 ) 解引線框2Q，鶫此從引線框20分雛樹脂封装20。此時，金 羼膜12C麥成設置在樹脂突起17之狀態，而形成第1_所 示之半導體裝置10。 卯上述，使用一藉著溶解引線框20而從引線框20分離 樹脂封裝12之方法•拜此可確實且輕易進行從引線框2 0分 離樹脂封裝12之分離處理，可提高成品率。 第23圖係顯示分離工程終了之狀態的半導髏裝置10。 如該圈所示*在分離工程終了之時刻，多數個半導鰭裝置 10維捋被黏接在帶構件3 3之狀態。因此•可使分離工程終 了後之半導雎装置10之處理變成容易。再者，Μ第23圖所 示之狀態捲回箝構件後出貨，藉此可與晶片零件同樣*在 安装時可將半導體裝置1Q自動装填在安装基片。 由上述之製造方法製造半導髖裝置* »此可省略以往 两要的引線之切斷處理、及將引線成形一規定形狀（例如 海鷗翼吠）之工程，可使半導«装置10製造工程簡軍化。 接著，說明有闞上述半導«装置10之製造方法之變形 例。 第24画係顬示密封工程之第一變形例。依前述實施例 ，一如第18圖所示*剛樹脂横製後之狀態時用澆口内樹脂 來連结多數個之樹脂封装12間，但一如第20圃所示，此澆 口内樹脂«後被除去，其後一如第2 1_所示•變成設有帶 構件33之構成。 由前述之說明可知*帶構件33係為了避免樹脂封裝12 從引線框2 0時分散成七零八落之狀態而設置者。於是•在 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 23 B7 五、發明説明（21 ) 本實施例，乃利用澆口内樹脂及流道内所殘留之樹脂2 9M 替代帶構件33·將澆口内樹脂及流道31内所殘留之樹脂29 作為用來連结各樹脂封裝之連结樹脂部使用。瑄是本實施 例之特激，Μ下，將此埋结部樹脂部稱做流道框34。 如此*使流道框34具備支持各樹脂封装12之櫬能，賴 此可有效利用通常要除去的澆口内樹脂及流道31內所殘留 的樹脂29。又•由於在半導體装置10之出貨時有必要除去 流道框34,所Μ剛要出貨前，如第2 5圏所示設置帶構件33 ，然後除去流道框34即可（連结樹脂除去工程）。 如此剛要出貨前設置帶構件33,薄此可在分離工程及 半導«裝置10之試驗工程等中，防止帶構件33之損傷。在 此方面，如前述* Μ黏接於帶構件3 3之狀態出貨半導體装 置1Q時有利。 第26圖及第2 7圖係顯示密封工程之第二變形例。依照 前述之實施例* 一如第20圈所示，多數個之樹脂封装12係 在密封工程終了之時刻被作成各個獮立之狀態。反觀，本 實施例之特徴構成係在密封工程終了之時刻連结多數個樹 脂封裝12。 經濟部中央樣準局貝工消費合作社印製 第26圈係顏示本變形例中之密封工程終了時之引線框 20。如該圔所示•多數個樹脂封裝12係連结成板巧克力狀 之狀態*並在鄰接之樹脂封裝12間形成有溝部35。因此， 在實施分離工程之時刻•多數個半導«装置1Q變成透遇溝 部35連结樹脂封裝12之構成，不用箝構件33也可進行各半 導髁装置10之位置限制。 本纸張尺度適用中國國家標準（CNS ) Α4規格（2丨Ο X 297公釐） -24 - 經濟部中央樣準局員工消費合作社印策 A7 B7 五、發明説明（22 ) 又，如要將半導«装置分離成各個的話，在溝部35 之形成位置切開樹脂封装12躭可。此樹脂封装12之切開作 業，由於形成有溝部35而可Μ輕易地進行。 第27圖係顯示為形成第26圖所示之樹脂封装12而使用 之金靨棋36。如該匾所示，構成金屬横36之上棋37的横六 ，係形成對應於溝部3 5之位置形成有突起38之形狀。又* 在下棋39形成有供引媒框20安装之安裝凹部40。如此，可 用簡單之金饜棋構成，形成多數個連结起來的樹脂封装12 Ο 又，第28圖係顯示分離工程之變形例。在前述實施例 方面*乃使用從引線框20分離樹脂封装12之方法。但本實 施例，卻不溶解引線框20，而是從引線框20剝下樹脂封装 12·賴此機械地從引線框2 0分離樹脂封装12。 依照此分離方法*跟前述實施例之方法相較*變成不 補要蝕刻液且可縮短工程所需之時間。然而，由於機械地 從引線框20分維樹脂封装20 *而有金饜膜13C能否從引線 框20向樹脂突起17移動之問鼴，不過，如果在引線框2 0之 製造工程之金羼膜形成工程，預先在凹部2 2内設置用來提 高金羼膜13C之分離性的構件之後，形成金颸膜13C的話， 即可薄此解決此缺點。 其次•說明本發明第二實施例之半導«裝置50。 第2 9圖係顯示本發明第二實施例之半導«裝置5Q。又 ，於該圃中，與第一實施例之半導體裝置10間一構成者， 附Μ同一符號，說明則略之。 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） (請先閲讀背面之注意事項再填寫本頁) .裝. 訂 25 五、發明説明（23 A7 B7 經濟部中央標準局員工消费合作社印装 第二實施例之半導艚装置50·係以把樹脂封裝51作成 上部樹脂部52及下部樹脂部53之二曆構造為特激者。又， 在下部樹脂部53之一規定位置形成有樹脂突起54·在此樹 脂突起54則設有例如鈀（Pd)之單曆構造的金雇膜55。 再者，在下部樹脂5 3設有連接電極56。此連接霣極56 之下部延出部62,係透過形成在下部樹脂部53之貫穿孔57 而霄接於金屬膜5 4之同時•形成在上部之接合部63則延出 而伏在下部樹脂部53之上面K供電線18接合。 如本實施例，將樹脂封装51作成上部樹脂部52與下部 樹脂部53之上下二層構造，藉此可在上部樹脂部52與下部 樹脂部53·作成不同樹脂種類的樹脂部。為此，例如用耐 熱且高機強度之樹脂來形成装載有半導級元件11之下部樹 脂部53同時·用散热特性良好之樹脂來形成上部樹脂部52 *因而可謀求半専體装置50之特性提升。 又，於樹脂封装51之下部樹脂部53形成樹脂突起54之 同時，於此樹脂突起54形成金属膜54 ·藉此樹脂突起54及 金鼷膜55可發揮與BGA型半導體裝置之焊鎘突起相等之機 能，因此可提高半導«装置50之安裝性。 又•依照上述之實施例，雖顯示將樹脂封装51構成由 上部樹脂部52及下部樹脂部所成之二曆構造，但樹脂封装 51並不受限於二餍構造，三層Μ上之構成也可。 接著，使用第30圈乃至第39國來說明第二實施例之有 闞半専體裝置50之製造方法。又，本賁施例之製造方法之 特激係在於金羼膜55及連接電極56·其他構成之製造方法 {請先閲讀背面之注意事項再填寫本頁) -裝. 訂 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） 26 -Ο β - 經濟部中央標率局員工消費合作社印製 A7 B7 五、發明説明（24 ) 則與前述實腌例所說明之製造方法相同，故K下之說明僅 涉及金属膜5 5及《接電極5 6之形成方法。 首先，如第3 0圖所示，準備由銅（Cu)等所成之平板狀 金屬基材21。然後，於此金厲基材21之上下兩面塗佈例如 由感光性樹脂等所成之蝕刻保護膜（保護膜塗佈工程）； 接著使用未圖示之屏蔽對此蝕刻保護膜進行曝光處理，其 後進行顯像處理，藉此除去對應於蝕刻保護膜之凹部形成 位置的部位，以形成第31圈所示之保護膜圖案2 4a (保護 膜圖案形成工程）。 俟保護膜圖案形成工程終了後，對形成有保護瞑圖案 24a之金屬基材21實施蝕刻處理（蝕刻工程）。在此蝕刻 工程，僅對金鼷基材21之上面實胨半蝕刻*拜此如第32圃 (第32圖Μ後之各圖均為將第31_中以箭形符號B表示的 虛線圍繞領域，放大顯示者）所示，在金臑基材21之凹部 形成位置形成凹部58。 如上所述，實胨蝕刻工程後，接著實賍金鼷Ρ形成工 程以形成金屬膜55。在本實施例方面，其金觸膜55之形成 ，係使用電鍍法，將金圈膜21浸漬於電鍍檐Κ進行霣場電 鍍。本實施例之金臈膜，由於構成鈀（Pd)之軍®構造，所 Μ賴一次之«鍍處理來形成金屬膜。第33圈係顧示形成有 金屬膜55之金屬基材21。 又，在上述之金覼膜形成工程，雖說明使用«級法來 形成金屬膜5 5之方法，但金羼瞑5 5之形成並不受限於電雜 法，例如使用蒸鍍法、激射法等之其他膜形成技術來形成 本紙張尺度適用中國國家標隼（CNS ) Α4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝· -1° 27 經濟部t央梂準局員工消費合作社印製 A7 B7 五、發明説明（25 ) 金羼膜55也可。 如上述，俟於金靥膜形成工程將金羼膜55形成在凹部 58内後，接著實施用來除去保護膜圔案24a之保護膜除去 工程，以形成如第34圖所示之引線框59。 俟形成如上述之引線框59後*接著使用此引線框59來 製造半導體装置50。首先，如第35圏所示，在引線框59之 上部設置下部樹脂部53。此時，下部樹脂部53也侵入形成 有金羼膜55之凹部58内Μ形成樹脂突起54。 其次，如第36圄所示，在形成下部樹脂部53之樹脂突 起54之位置，形成貫穿孔57。藉著形成此貫穿孔57而使金 羼膜55成露出之狀態。 俟形成貫穿孔57後，接著在下部樹脂部53之上部全面 *形成以規定膜厚成連鑛霣極56之導霣性金羼膜60。此導 霣性金羼膜60,係使用無霣解電鍍法、蒸鍍法、或溅射法 來形成者。又·當形成導霣性金鼷膜6Q時•在貫穿孔57之 内部也填充有導電性金屬膜60,形成下方延出部62*因此 ，如第37_所示，導電性金羼膜60與金羼_55變成霣接構 造° 接著，在専電性金羼膜60之上部塗佈鈾刻保護膜之同 時進行嗶光處理，Μ便如第38圓所示，在連接霣極56之位 置形成保護膜圓案61。然後，將保護膜案61作為屏蔽對 導電性金羼膜60進行牲刻處理，Μ除去連接®極56之形成 位置Μ外之導轚性金屬膜60。 藉此，如第39匾所示，使下方延出部62連接至金羼膜 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝. --° 28 經濟部中央標準局員工消費合作社印製 A7 _____B7_ 五、發明説明（26 ) 55之同時•形成一供霣線18連接的接合部63向下部樹脂部 53之上部延出的連接霣極56。又，在形成連接霣欏56後所 實施之製造方法，係與使用前述第15園乃至第2 3画來說明 的製造法大致相同，因而其說明不再赘述。 其次·說明有W本發明第三實施例之半導體装置70。 第40圃係顯示本發明第三實施例之半導體装置70。又 •於該画中，與第二實施例之半専«装置50同一構成者附 K同一符號·其說明則不再赘述。 第三實腌例之半導體装置70，係將樹脂封裝51作成上 部樹脂部52與下部樹脂部53之二曆構造同時，Μ金羼突起 71替代樹腊突起54·將其形成在連接《極72,為特微者。 在此金屬突起71，例如直接設有鈀（Pd)之單曆構造的金屬 膜55° 此連接霣極72係設置在下部樹脂部53 ;金羼突起71則 透過形成在下部樹脂部5 3之孔部7 3而與金屬膜55¾接。又 ，形成在連接電極7 2上部之接合部7 4係延出而伏在下部樹 脂部53之上面•以供電線18接合。 本實施例之半専體裝置7Q也與第二實施例之半導體装 置50—樣*將樹脂封装50作成上部樹脂部52輿下部樹脂部 53之上下二B構造，因此可謀求半導髖装置70之特性提升 Ο 又，在連鑛電極7 2形成金羼突起71·而在此金羼突起 71直接形成金臞膜55,藉此可減低金屬突起71與金颶膜55 之接合部位之阻抗，從而可提高半導賵装置70之霣特性。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) .裝· ，va 29 Α7 Β7 302529 五、發明説明（27 ) 又，在本實施例，樹脂封装51也不受限於二靥構造，作成 三雇K上之構造也可。 (锖先閱讀背面之注意事項再填寫本頁) 接著使用第41圖乃至第50圖來說明第三實施例之半導 趙裝置70之製造方法。又，本實施例之製造方法之特徴係 在於金屬膜55及連接電極72之形成方法•其他構成之製造 方法則與前述實腌例所說明之製造方法同一，故Μ下之說 明僅涉及金屬膜55及連接電極72之形成方法。 首先，如第41圖所示，準備由飼（Cu>等所成之平板狀 金屬基材21。然後，於此金羼基材21之上下兩面塗佈由感 光性樹脂等所成之蝕刻保護膜；接著對該蝕刻防護膜進行 W光•顯像處理•藉此除去對應於蝕刻保護膜之凹部形成 位置的部位，以形成第42圔所示之保護膜園案24a。 接著·對形成有保護膜圈案24a之金羼基材21實施蝕 刻處理。在此蝕刻處理，僅對金靥基材21之上面實施半触 刻，鞴此如第43圓（第43圖K後之各圖均為將第42圔中Μ 筋形符號C表示的虛線_繞領域，放大表示者）所示，在 金屬基材21之凹部形成位置形成凹部58。 經濟部中央標準局員工消費合作社印製 俟上述蝕刻處理完了後·接著實施金靥膜形成工程， Μ便如第4 4匯所示在凹部58内形成例如由霣鍍法所成之金 屬膜55。又•上述金羼膜之形成並不受限於霣鍍法，例如 使用蒸鍍法、濺射法等之其他膜形成技術來形成也可。 又，俟於凹部58内形成金画膜5 5後•接著實豳用來除 去保護膜圖案24a之保護膜除去工程，Μ形成如第45圖所 示之引線框59。 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ29?公釐） 30 經濟部中央標準局員工消費合作社印製 Α7 Β7 五、發明説明（2β ) 俟形成如上述之引線框59後，接著使用此引線框5 9來 製造半導《装置70。首先，如第46臞所示，在引線框59之 上部設置下部樹脂部53。其次•如第4 7圆所示，除掉跟下 部樹脂部53之金靥膜55相向之部分·於下部樹脂部53形成 孔部73。賴著形成此孔部7 3而使金臑膜55變成露出之狀態 Ο 俟形成孔部73後，接著在下部樹脂部53之上部全面， 形成Μ規定膜厚成速接霣極72之導霣性金颶瞑60。此導電 性金颺膜60 ·係使用無電解霣鍍法、蒸鍍法、或濺射法來 形成者。又*當形成導電性金屬膜6 0時，在凹部58之内部 也填充有導霣性金屬膜60·形成金屬突起71，因此，如第 48·所示，金屬突起71與金靥膜55成為直接霣接之構造。 此時，依照本實Sfe例，孔部73之面積比前述實施例所 形成的貫穿孔57較廣闊，因此金臈突起與金圈联55之接觸 面積變寬。因此•能Μ低阻抗霣接金饜突起71與金屬膜55 Ο 俟如上述形成了導電性金羼膜60後，接著對此専霣性 金羼膜6Q之上部塗佈鈾刻保護膜同時進行曝光•顯像處理 ，Μ便如第4 9園所示，在連接電極部7 2之形成位置形成保 諸瞑画案61。然後，將保護膜圈案61作為屏蔽對導罨性金 圈膜61實施蝕刻處理，以除去連接霣棰部72之形成位置以 外之導霣性金雇膜60。 藉此•如第50國所示，使金羼突起7 1連接至金羼膜55 之同時，形成一供霣線18連接的接合部74向下部樹脂部53 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) •裝.A7 B7 V. Description of the invention (17) Secondly, using the lead frame 20 made by the method described above, the manufacturing method of the Kan semiconductor device 10 will be described with reference to FIGS. 15 to 28. When the half-body device 10 is to be manufactured, as shown in the 15th circle • While applying the component fixing resin 15 at the prescribed component loading position of the lead frame 20, load the half component «components on the upper part of the component fixing resin 15 (Component loading engineering). Since the component fixing resin 15 has an insulating property and can act as an adhesive, the semiconductor element 11 becomes a state where the adhesive force of the box component fixing resin 15 is loaded on the lead frame 2Q. When the component loading process is finished | installed, the lead frame 20 is mounted on the wire bonding device, and then, as shown in FIG. 16, the wire 18 is set on the metal film 13C formed in the lead frame 20 (with the words, internally employed 13C-3) and the pad 14 formed in the semi-conducting hip element 11, the M-conductor connects the semi-conducting element 11 and the metal film 13C (the connection engineering). When this wire 18 is wire-bonded between the electrode pad 14 and the metal film 13C, according to the example of the 16th circle *, one end of the dielectric 18 is first bonded to the pad 14 (first bonding), and then The other end of the wire 18 is bonded to the gold film 13C (second bonding). Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. However, as shown in Figure 17, first connect one end of the wire 18 to the gold film 13C, and then pull out the wire 18 from the metal film 13C to the pole pad 14 The other end of the wire 18 may be connected to the electric pad 14. In this way, by using the so-called f wire bonding method of "first connecting one end of the wire 18 to the gold film 13C and then connecting the other end of the wire 18 to the electrode 14j, the lower back of the coil can be achieved. Seek the lower back of the semiconductor device 10. This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210Χ 297 mm) 20 A7 B7 printed by the Employee Consumer Cooperative of the Central Standard Falconry Bureau of the Ministry of Economic Affairs 5. Description of the invention (18) In general, the pitch of the pads 14 is narrower than that of the gold film 13C. • In the wire bonding process, the bonding area of the first bonding is narrower than the bonding area of the second bonding. Therefore, the pitch The broad gold film 13C is bonded for the first time, and the narrowly spaced ball pad 14 is bonded for the second time, thereby enabling the high-density wire 18 to be set. After the above connection works are completed, Next, the resin 29M is formed to seal the semiconductor element on the lead frame 2Q, and a sealing process for forming the resin package 12 is carried out. In this embodiment, although the method of plastically molding the resin package 12 is used However, it is possible to form the resin package 12 by box bonding. The 18th part shows the general structure of the state immediately after the lead frame 20 whose connection process has been completed is inserted into a horizontal gold mold to mold the resin 29. Among them, 30 It is the remainder; 31 is the runner; 32 is the gate. As shown in the figure • The resin package 12 is collectively formed in the lead frame 20. In addition, after the chess game, a plurality of resin packages 12 are formed. It is a state where a thin resin 29 (hereinafter referred to as resin in the gate) existing in the gate 32 is formed to be connected. In the 19th circle, the resin package 12 corresponding to a semi-gap device is enlarged. As shown in the picture, * Resin 29 is formed by a chess six (not shown in a plaque) formed on a metal chess made from chess (upper horizontal) and formed into a prescribed shape. * Introduction of the lower horizontal power by the lead frame 20; The inside of the recess 22 (specifically, the inside of the gold film 13C) is also filled with a resin 29 * to form a resin protrusion 27. In this state * the resin package 12 is formed to be attached to the lead frame 20. As described above After the resin package 12 is formed, remove each resin package 12 Standard (CNS) A4 specification (210X297mm) (Please read the precautions on the back before filling in this page). Installed., Va 21 A7 B7 Five 'Invention Instructions printed by the Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs (19) The resin in the gate 32 formed between the resin, the resin remaining in the flow channel 31, and the residue 30 constitute the individual resin packages 12 as described above. However, as described above, each resin package 12 is formed The state of attaching and fixing to the lead frame 20 * Although it is in an independent state *, each resin package 12 will not be detached from the lead frame 20. Once the above sealing process is completed, the tape setting process is then carried out. In the tape installation process, as shown in the 21st circle, the tape member 33 (the hatched part) such as an adhesive tape is provided on the upper part of each resin package 12 in an independent state. The tape member 33 is made at the bottom One side of the belt is coated with an adhesive; and the bottom belt is formed of a material that is not damaged by the etching solution used in the next separation process. In this way, the upper portions of the plurality of resin packages 12 are bonded by the belt member 33, whereby even if the resin packages 12 are separated from the lead frame 20, the position of each resin package 12 can be restricted by the belt member 33. In addition, the time for installing the belt member 33 is not limited to after the formation of the resin package 12, for example, before the implementation of the sealing process, it is placed in the chessboard in advance. By this time, the clamp member 33 is used to connect A plurality of resin packages 12 may be used. After the above tape installation process is completed, the resin package 12 is separated from the lead frame 20, and a separation process for forming the semiconductor device 10 is performed. The 22nd line is a separation project. This circle shows the method of immersing the lead frame 20 in the etching solution to dissolve the resin package 12 from the lead frame 20. The etching liquid used in this separation process is an etching liquid having a value that dissolves the lead frame 20 but does not dissolve the 13C of the gold film 13C. Therefore, the standard of fully-dissolved paper is in accordance with Chinese National Standard (CNS> Α4 specification (210X297mm) (please read the notes on the back before filling out this page). Β7 5. Description of the invention (20) The lead frame 2Q is solved, and the resin package 20 is separated from the lead frame 20. At this time, the gold film 12C is placed in the state of the resin protrusion 17 and the first Semiconductor device 10. The method described above uses a method of separating the resin package 12 from the lead frame 20 by dissolving the lead frame 20. By doing so, the separation process of separating the resin package 12 from the lead frame 20 can be surely and easily performed, which can improve the finished product Figure 23 shows the semi-conducting skull device 10 at the end of the separation process. As shown in the circle * At the end of the separation process, most of the semi-conducting fin devices 10 are adhered to the belt member 3 3 Therefore, the handling of the semiconducting device 10 after the separation process is completed can be made easier. Furthermore, the state shown in Fig. 23 is rolled back to the jaw member and shipped, so that it can be installed in the same way as the chip parts. Semiconducting The device 1Q is automatically loaded on the mounting substrate. The semi-conducting hip device is manufactured by the above-mentioned manufacturing method * »This can omit the cutting process of the conventional two important leads and the process of forming the leads into a predetermined shape (for example, seagull wing bark), The manufacturing process of the semiconducting device 10 can be simplified. Next, a modification of the manufacturing method of the semiconducting device 10 described above will be described. Picture 24 is the first modification of the sealing process. According to the foregoing embodiment, As shown in Figure 18 * When the resin is made horizontally, the resin in the gate is used to connect a large number of 12 resin packages, but as shown in the 20th garden, the resin in the gate is removed after « The second one is shown as 2 1_. It becomes a structure provided with a belt member 33. From the foregoing description, it can be seen that the belt member 33 is provided to prevent the resin package 12 from being scattered from the lead frame 20 into a scattered state. Therefore, the Chinese National Standard (CNS) Α4 specification (210Χ297mm) is applicable to this paper standard (please read the precautions on the back and then fill out this page). Binding · Order 23 B7 5. Description of the invention (21) This embodiment , Using resin and Resin remaining in the channel 29M instead of the belt member 33. The resin in the gate and the resin 29 remaining in the runner 31 are used as the connecting resin portion for connecting the resin packages. Xuan is the special example of this embodiment. The resin portion of the buried part is called the runner frame 34. In this way, the runner frame 34 has the ability to support each resin package 12, so that the resin in the gate and the runner 31 that are usually removed can be effectively used Resin 29 remaining inside. Also, since it is necessary to remove the runner frame 34 when shipping the semiconductor device 10, just before shipping, the band member 33 is provided as shown in the second five circles, and then the runner is removed Frame 34 is sufficient (connection resin removal process). In this way, the belt member 33 is provided just before shipment, and the thinness can prevent the damage of the belt member 33 in the separation process and the pilot project of the semiconductor device 10. In this respect, it is advantageous when the semiconductor device 1Q is shipped in a state where * M is adhered to the belt member 33 as described above. Figure 26 and Figure 27 show the second modification of the sealing process. According to the foregoing embodiment * As shown in the 20th circle, a plurality of resin packages 12 are made into a standing state at the end of the sealing process. In contrast, the special structure of this embodiment is to connect a plurality of resin packages 12 at the end of the sealing process. Printed by Beigong Consumer Cooperative of Central Bureau of Standards of the Ministry of Economic Affairs. Circle 26 shows the lead frame 20 at the end of the sealing project in this modification. As shown in this picture, a plurality of resin packages 12 are connected in a chocolate-like state *, and grooves 35 are formed between adjacent resin packages 12. Therefore, at the time when the separation process is performed, many semiconducting devices 1Q are configured to penetrate the groove portion 35 to connect the resin package 12, and the position of each semiconducting condyle device 10 can be restricted without the jaw member 33. This paper scale is applicable to the Chinese National Standard (CNS) Α4 specification (2 丨 Ο X 297mm) -24-Employee's Consumer Cooperative of the Central Bureau of Samples of the Ministry of Economic Affairs A7 B7 V. Description of invention (22) If the semiconducting device is separated into individual parts, the resin package 12 may be cut at the position where the groove 35 is formed. The cutting operation of the resin package 12 can be easily performed because the groove 35 is formed. FIG. 27 shows a gold tug 36 used to form the resin package 12 shown in FIG. 26. As shown in this plaque, the horizontal six that constitutes the chess 37 on the metal horizontal 36 forms a shape in which the protrusion 38 is formed at a position corresponding to the groove portion 35. Furthermore, in the chess game 39, an installation recess 40 for mounting the media frame 20 is formed. In this way, a simple golden chess can be used to form a plurality of connected resin packages. In addition, Figure 28 shows a modification of the separation process. In the aforementioned embodiment *, the method of separating the resin package 12 from the lead frame 20 is used. However, in this embodiment, the lead frame 20 is not dissolved, but the resin package 12 is peeled off from the lead frame 20. In this way, the resin package 12 is mechanically separated from the lead frame 20. According to this separation method * compared with the method of the foregoing embodiment *, it becomes unnecessary to etch the liquid and the time required for the project can be shortened. However, due to the mechanical fractal resin package 20 * from the lead frame 20, there is a question as to whether the gold film 13C can move from the lead frame 20 to the resin protrusion 17, but if the lead frame 20 is manufactured by Jin Yi In the film formation process, after a member for improving the separability of the gold film 13C is provided in the concave portion 22 in advance, if the gold swell film 13C is formed, the disadvantage can be solved by thinning it. Next, the semiconductive device 50 of the second embodiment of the present invention will be described. Figure 29 shows a semiconducting device 5Q of the second embodiment of the present invention. In addition, in this garden, the same structure as the semiconductor device 10 of the first embodiment is attached with the same symbol, and the description is omitted. This paper scale is applicable to the Chinese National Standard (CNS) Α4 specification (210Χ297mm) (please read the precautions on the back before filling out this page). Packing. Order 25 5. Description of the invention (23 A7 B7 Employee consumption of the Central Standards Bureau of the Ministry of Economy The cooperative prints the semiconducting stern device 50 of the second embodiment. The resin package 51 is made up of the upper resin portion 52 and the lower resin portion 53. It is a special case. In addition, the predetermined position of one of the lower resin portions 53 is A resin protrusion 54 is formed. The resin protrusion 54 is provided with a gold film 55 of a single calendar structure such as palladium (Pd). In addition, a connection electrode 56 is provided on the lower resin 53. This connection electrode 56 has a lower part The extended portion 62 is connected to the metal film 54 through the through hole 57 formed in the lower resin portion 53. The joint portion 63 formed on the upper portion is extended to lie on the upper surface of the lower resin portion K 18. Joining. As in the present embodiment, the resin package 51 is formed into an upper and lower two-layer structure of an upper resin portion 52 and a lower resin portion 53, whereby resin portions of different resin types can be formed on the upper resin portion 52 and the lower resin portion 53 ·. For this purpose, for example, heat-resistant and The resin with mechanical strength is used to form the lower resin portion 53 on which the semiconductor element 11 is mounted. At the same time, the upper resin portion 52 is formed with a resin having good heat dissipation characteristics. * Therefore, the characteristics of the semiconductor device 50 can be improved. At the same time as the resin protrusions 54 on the lower resin portion 53 of the package 51 form the metal protrusions 54, the metal protrusions 54 are formed on the resin protrusions 54. This allows the resin protrusions 54 and the gold film 55 to function as the solder cadmium protrusions of the BGA type semiconductor device The installation of the semiconducting device 50 can be improved. Also according to the above embodiment, although the resin package 51 is shown to be composed of the upper resin part 52 and the lower resin part, the resin package 51 is not limited In the two-layer structure, the structure on the three-layer M may also be used. Next, the 30th circle to the 39th country will be used to describe the manufacturing method of the second embodiment of the device 50. Also, the manufacture of this embodiment The special way of the method lies in the manufacturing method of the gold film 55 and the connecting electrode 56. Other manufacturing methods (please read the precautions on the back and then fill out this page)-Pack. The size of this paper is applicable to China National Standard (CNS) Α4 specifications 210Χ297 mm) 26-Ο β-Printed by the Ministry of Economic Affairs, Central Standardization Bureau, Employee Consumer Cooperative A7 B7 V. The description of invention (24) is the same as the manufacturing method described in the above example, so the description under K only concerns metals The method of forming the membrane 55 and the contact electrode 56. First, as shown in Fig. 30, a flat metal substrate 21 made of copper (Cu) or the like is prepared. Then, an etching protective film made of a photosensitive resin or the like is coated on the upper and lower surfaces of the gold base material 21 (protective film coating process); then the etching protective film is exposed to light using a mask (not shown), and then The development process is performed, thereby removing the portion corresponding to the position where the concave portion of the etching protective film is formed, to form the protective film pattern 24a shown in the 31st circle (protective film pattern forming process). After the protective film pattern forming process is completed, the metal substrate 21 on which the protective ridge pattern 24a is formed is subjected to an etching process (etching process). In this etching process, only the upper peptone of the gold base material 21 is half-etched. * As shown in the 32nd garden (each picture after the 32nd picture M is surrounded by the dotted line indicated by the arrow B in the 31st area, As shown in the enlarged view), a recess 58 is formed at the position where the recess of the gold base 21 is formed. As described above, after the peptone etching process, the pallidum gold p formation process is followed to form the metal film 55. In this embodiment, the gold contact film 55 is formed by immersing the gold ring film 21 in the electroplating eaves K using a plating method to perform electroplating in the field. The gold film of this embodiment is formed of a palladium (Pd) Jun® structure, so the metal film is formed by one-time plating process. The 33rd circle shows the metal substrate 21 on which the metal film 55 is formed. In addition, in the above-mentioned gold film formation process, although the method of forming the metal film 55 using the «level method is described, the formation of the gold cap 55 is not limited to the electric hybrid method, for example, the vapor deposition method, the laser Other film forming techniques such as shot method are used to form this paper scale. The Chinese National Standard Falcon (CNS) Α4 specification (210 X 297 mm) is required (please read the precautions on the back and fill in this page) -installed -1 ° 27 A7 B7 printed by the Employee Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs 5. Invention Instructions (25) Jin Yi film 55 is also available. As described above, after forming the gold film 55 in the recess 58 after the gold film forming process, the protective film removing process for removing the protective film 24a is performed to form the lead frame 59 as shown in FIG. 34 . After forming the lead frame 59 as described above *, the lead frame 59 is then used to manufacture the semiconductor device 50. First, as shown in the 35th ring, the lower resin portion 53 is provided on the upper portion of the lead frame 59. At this time, the lower resin portion 53 also penetrates into the concave portion 58 where the gold film 55 is formed to form a resin protrusion 54. Next, as shown in the 36th mark, a through hole 57 is formed at the position where the resin protrusion 54 of the lower resin portion 53 is formed. By forming this through hole 57, the gold film 55 is exposed. After the through-hole 57 is formed, a conductive gold film 60 is formed on the upper part of the lower resin portion 53 to form a continuous film 56 with a predetermined film thickness. The conductive gold film 60 is formed using a non-electrolytic plating method, an evaporation method, or a sputtering method. • When the conductive gold film 6Q is formed • The through hole 57 is also filled with the conductive metal film 60 to form the lower extension 62 * Therefore, as shown in FIG. 37_, the conductive gold film 60 Become a junction structure with 黃 羼 _55 °. Next, beeping treatment is carried out while coating a uranium engraving protective film on the upper part of the electrically conductive gold 羼 film 60. As shown in circle 38, M is connected to the pole 56位置 形成 保护 膜 圆 案 61. Then, using the protective film 61 as a shield, the conductive gold film 60 is engraved, and the conductive metal film 60 outside the forming position M of the connection electrode 56 is removed. In this way, as shown in the 39th plaque, the lower extension 62 is connected to the Jinluo film. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the precautions on the back before filling this page )-Installed.-° 28 A7 _____B7_ printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (26) 55 At the same time • Form a joint 63 for connecting the wire 18 to the upper part of the lower resin part 53出 的 難 极 极 56. In addition, the manufacturing method implemented after forming the connection 56 is substantially the same as the manufacturing method described using the above-mentioned 15th circle or even the 23rd picture, so the description will not be repeated. Next, a semiconductor device 70 according to a third embodiment of the present invention will be described. The 40th garden shows the semiconductor device 70 of the third embodiment of the present invention. Also • In this painting, the same components as those in the second embodiment of the "50" device 50 have the same symbol "K" and their description will not be repeated. In the semiconductor device 70 of the third embodiment, the resin package 51 is formed into the upper resin portion 52 and the lower resin portion 53. At the same time, the M Jin Ke protrusion 71 replaces the tree wax protrusion 54. , For those who are special. Here, the metal protrusion 71 is, for example, a metal film 55 of a single calendar structure directly provided with palladium (Pd). The connection electrode 72 is provided at the lower resin portion 53; the gold protrusion 71 is formed through the lower resin portion 53 The hole portion 73 is in contact with the metal film 55¾. In addition, the bonding portion 74 formed on the upper portion of the connection electrode 72 is extended to lie on the upper portion of the lower resin portion 53. The bonding is performed by the power supply wire 18. The half-body device 7Q of this embodiment is also the same as the semiconductor device 50 of the second embodiment. * The resin package 50 is configured with an upper resin portion 52 and a lower resin portion 53 above and below the B structure. The characteristics are improved. In addition, the gold protrusions 71 are formed on the continuous electrode 72. The gold protrusions 55 are directly formed on the gold protrusions 71, thereby reducing the resistance of the junction between the metal protrusions 71 and the gold hurricane film 55. Therefore, the characteristics of the semiconductive semi-conductor device 70 can be improved. This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) (please read the precautions on the back before filling out this page). Install ·, va 29 Α7 Β7 302529 5. Description of the invention (27) In the embodiment, the resin package 51 is not limited to the two-component structure, and the three-component structure may be used. (Read the precautions on the back before filling in this page.) Next, Figure 41 to Figure 50 will be used to explain the manufacturing method of the semiconductor device 70 of the third embodiment. In addition, the manufacturing method of this embodiment is characterized by the method of forming the metal film 55 and the connection electrode 72. The manufacturing methods of other structures are the same as the manufacturing method described in the previous example, so the description below M only concerns the metal film 55 and the formation method of the connection electrode 72. First, as shown in FIG. 41, a flat metal substrate 21 made of Cu (Cu) etc. is prepared. Then, an etch protection film made of photosensitive resin or the like is coated on the upper and lower sides of the Jinji substrate 21; Next, the etching protection film is subjected to W light development processing to remove the portion corresponding to the formation position of the concave portion of the etching protection film to form the protection film pattern 24a shown in No. 42. Next, the protection film is formed In the case 24a, the gold substrate 21 is etched. In this etching process, only the upper part of the gold substrate 21 is half-touched, and the circle is the 43rd circle (the pictures after the 43th figure K are all the 42nd 圔Μ The dotted line indicated by the rib symbol C_wound the area, enlarged display), the recess 58 is formed at the position where the recess of the metal substrate 21 is formed. Printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs after the above etching process is completed · Next After implementing the gold film formation process, M will form the metal film 55 formed by the beryllium plating method in the concave portion 58 as shown in section 4. The formation of the aforementioned gold film is not limited to the beryllium plating method. For example, using evaporation method, sputtering method, etc. It may be formed by other film formation techniques. In addition, after forming the gold painting film 55 in the concave portion 58 • The protective film removal process for removing the protective film pattern 24a is then performed, and the lead shown in FIG. 45 is formed Box 59. This paper scale is applicable to the Chinese National Standard (CNS) Α4 specification (210Χ29? Mm) 30 Α7 Β7 printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Invention description (2β) After forming the lead frame 59 as described above Then, use this lead frame 59 to manufacture the semiconductor device 70. First, as shown in section 46, a lower resin portion 53 is provided above the lead frame 59. Secondly, as shown in section 47, remove the heel The portion where the gold film 55 of the lower resin portion 53 faces. The hole portion 73 is formed in the lower resin portion 53. By forming this hole portion 73, the gold film 55 is exposed. Once the hole portion 73 is formed, then On the whole of the upper part of the lower resin part 53, a conductive gold hurricane 60 with a predetermined film thickness of M and a fast connection electrode 72 is formed. This conductive gold film 60 is made by electroless plating, evaporation, or It is formed by sputtering method. When the conductive metal film 60 is formed Since the concave portion 58 is also filled with a conductive metal film 60. The metal protrusions 71 are formed. Therefore, as shown in FIG. 48, the metal protrusions 71 and the gold film 55 are directly connected to each other. At this time, according to this In the actual example, the area of the hole 73 is wider than that of the through hole 57 formed in the previous embodiment, so the contact area between the gold bump and the gold ring joint 55 becomes wider. Therefore, the low-impedance gold bump 71 can be connected to Metal film 55 Ο After the conductive gold film 60 is formed as described above, then a uranium inscription protective film is coated on the upper part of this conductive gold film 6Q, and exposure and development processing are performed simultaneously. As shown, at the formation position of the connection electrode portion 72, the preserving plan 61 is formed. Then, using the protective film ring 61 as a shield, the conductive gold ring film 61 is etched to remove the conductive gold film 60 except for the formation position of the connection portion 72. In this way, as shown in the 50th country, at the same time as connecting the gold protrusions 71 to the gold film 55, a joint portion 74 for connecting the wire 18 to the lower resin portion 53 is formed. The paper standard applies to the Chinese National Standard (CNS ) A4 specification (210X297mm) (Please read the precautions on the back before filling this page) • Install.

、ST 31 經濟部中央標準局貝工消費合作社印製 A7 B7 五、發明説明（29 ) 之上部延出的連接霣極72。又，在形成連接霣極部7 2後所 實施之製造方法*係與使用前述第15_乃至第2 3圖來說明 的製造方法大致相同，因而其說明不再赘述。 其次·說明有關本發明第四實施例之半導體装置80。 第511係顯示本發明第四賁施例之半導«裝置80。又 ，於該圖中，與第二實晦例之半導體裝置50同一構成者附 以同一符號，其說明例不再赘述。 第四實施例之半導雔装置8Q*係將樹脂封装81作成上 部樹脂部82與下部樹脂部83之二雇構造同時，用絕緣性樹 脂箝來構成下部樹脂部83,為特撖（M下*將下部樹脂部 83稱做樹脂帶83)。 又•在樹脂帶83之規定位置形成有孔部84，並在樹脂 帶83之安裝面（下面）形成有外部霣極膜85以便覆Μ此孔 部84。電線18則透遇孔部84而接合於此外部《極膜85。 本實施例之半導體装置80也與第二實施例之半導體装 置50—樣*將樹脂封裝構成上部榭脂部82與樹脂帶83之上 下二曆構造，因此可謀求半導體裝置80之特性提升。又· 用樹脂帶83來形成位置於樹脂封装81最下曆之樹脂部*藉 此在製造半導髖装置80時可省略在其他實施例所必需的引 媒框20, 59,因而可謀求成本之減低。 〔發明之效果〕 如依本發明，可實現下述各種效果。 如依申請專利範園之發明•則 内引線和外引線變成不需要，且，由於可將形成在樹 本紙張尺度逋用中國國家標準（CNS ) Α4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝· 訂 32 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（30 ) 脂突起之金靥膜當做外部端子安裝，所K可縮小安裝面稹 。又，由於在半導體裝置内並未設置引線框，所Μ可謀求 成本之減低。再者，由於樹脂突起及金賙膜可發揮跟BGA 型半導體装置之焊錫突起相等之機能*故可提高安裝性。 又，如依申請專利範園第2項乃至5項所述之發明， 則 由於將金颸膜作成單層時，將連接機構（例如，線接 合）之接合性及焊接性均佳之金屬作為金牖膜使用，又， 金饜膜為曆合多數層而成之金属膜時•將最内曆作成連接 櫬構之接合性良好之金屬|且將最外層作成接合性及焊接 性均佳之金羼，所Μ可使半導«元件與金蠲膜之電接及金 屬基片與安装基片之電接變成良好。 又*如依申請專利範困第6項所述之發明•則 可藉僅由凹部及金羼膜所構成之籣單構造之引線框· 來製造申誧専利範圃第1項乃至第5項所述之半導體裝置 Ο 又，如依申謫専利範圃第7項所述之發明•則 可藉保護膜之塗佈、保護膜圔案之形成、蝕刻、金靥 膜之形成、及保護膜之除去等之簡單工程，來形成引媒框 Ο 又，如依申誧専利範圃第8項所述之發明*則 由於在保護膜圔案形成工程*也除去對應於供電部之 位置的蝕刻保護，所Μ可輕易進行供霄部之構成。 又，如依申請專利範圃第9項所述之發明，則 本紙張尺度適用中國國家標隼（CNS ) Α4規格（210Χ297公釐） I ^ —裝 I "—訂 一 ·- (請先閲讀背面之注意事項再填寫本頁) 33 經濟部中央標準局員工消費合作杜印聚 Μ Β7 五、發明説明（31 ) 引線之切斷處理、及將引線成形一規定形狀（例如， 海W冀之形狀）之工程變成不需要·可將半導體裝置之製 造工程簡單化。 又，如依申諫專利範園第10項所述之發明，則 可謀求線圈之低後背化，從而可跟接著謀求半導髏裝 置之低後背化。又，由於作成對設置間距廣闊之金屬膜進 行第一次接合，並對於設置間距狭窄之霣極墊進行第二次 接合之構成*故可進行高密度之線配置。, ST 31 Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 B7 V. Description of Invention (29) The connection pole 72 extended from the upper part. In addition, the manufacturing method * implemented after the formation of the connection electrode portion 7 2 is substantially the same as the manufacturing method described using the aforementioned 15th to 23th figures, so the description will not be repeated. Next, the semiconductor device 80 according to the fourth embodiment of the present invention will be described. No. 511 shows the semi-conductive device 80 of the fourth embodiment of the present invention. In this figure, the same components as those of the semiconductor device 50 of the second real example are denoted by the same symbols, and description examples thereof will not be repeated. The semiconducting device 8Q * of the fourth embodiment uses the resin package 81 as the upper resin portion 82 and the lower resin portion 83. At the same time, the insulating resin clamp is used to form the lower resin portion 83. * The lower resin portion 83 is referred to as a resin tape 83). Also, a hole 84 is formed at a predetermined position of the resin tape 83, and an external corner film 85 is formed on the mounting surface (lower surface) of the resin tape 83 so as to cover the hole 84. The wire 18 penetrates the hole portion 84 and is connected to the outer electrode film 85. The semiconductor device 80 of this embodiment is also the same as the semiconductor device 50 of the second embodiment. * The upper and lower resin structures of the upper resin portion 82 and the resin tape 83 are encapsulated by resin, so that the characteristics of the semiconductor device 80 can be improved. In addition, the resin portion 83 is used to form the resin portion at the bottom of the resin package 81. Therefore, when manufacturing the semi-conducting hip device 80, the media frames 20 and 59, which are necessary in other embodiments, can be omitted, so that cost can be obtained. Reduction. [Effects of the Invention] According to the present invention, the following various effects can be achieved. If according to the invention of the patent application park, the inner lead and outer lead become unnecessary, and, because the standard formed on the tree paper can be used in China National Standard (CNS) Α4 specification (210X 297 mm) (please read first (Notes on the back and then fill out this page)-Installation · Order 32 Printed A7 B7 by Employee Consumer Cooperative of Central Bureau of Standards, Ministry of Economic Affairs 5. Invention Description (30) The fat-protruding gold film is used as external terminal installation, so K can reduce the installation surface Zhen. In addition, since no lead frame is provided in the semiconductor device, the cost can be reduced. In addition, since the resin protrusions and the gold film can function as the solder protrusions of the BGA type semiconductor device *, the mountability can be improved. In addition, according to the inventions described in items 2 to 5 of the patent application park, when the gold shim film is made into a single layer, the metal with excellent bondability and weldability of the connection mechanism (for example, wire bonding) is used as gold When the metal film is used, and the gold film is a metal film formed by combining a plurality of layers, the innermost layer is made into a metal with good bonding properties connecting the structure | Therefore, the electrical connection between the semiconducting element and the gold film and the electrical connection between the metal substrate and the mounting substrate become good. And * if according to the invention described in item 6 of the patent application, you can use the lead frame with a single structure composed of only the concave part and the gold film to manufacture the first and fifth items The semiconductor device mentioned Ο In addition, according to the invention described in item 7 of the application, it is possible to apply the protective film, form the protective film, etch, form the gold film, and the protective film Removal and other simple processes to form the introduction frame Ο Also, as in the invention described in item 8 of the Shenfan Fanpu *, due to the formation process in the protective film, the etching corresponding to the position of the power supply section is also removed Protection, so M can be easily constituted for the small part. In addition, if the invention described in item 9 of the patent application park is applied, the paper size is applicable to the Chinese National Standard Falcon (CNS) Α4 specification (210Χ297mm) I ^ — 装 I " — 定 一 ·-(Please first Read the precautions on the back and fill out this page) 33 Employee Consumer Cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs Du Yinju Β7 5. Invention Description (31) Lead cutting process and forming the lead into a prescribed shape (for example, Hai W Ji The shape of the project) becomes unnecessary. The manufacturing process of the semiconductor device can be simplified. In addition, according to the invention described in Item 10 of the application patent patent garden, the lower back of the coil can be achieved, so that the lower back of the semiconducting skull device can be subsequently sought. In addition, since the first bonding is performed on the metal films with a wide pitch, and the second bonding is performed on the pads with a narrow pitch *, high-density wire arrangement can be performed.

又，如依申請專利範園第11項所逑之發明，貝U 於分離工程中從引線框剝下樹脂封裝·《此可從引線 框輕易分離樹脂封装。 又·如依申請専利範圍第12項所述之發明，則 於分離工程中•溶解引線框而留下金羼膜K分離樹脂 封装•藏此可確實且輕易從引線框分離樹脂封裝。 又，如依申請專利範圍第13項及第14項所述之發明* 則 即使在引線框上形成多數個之樹脂封装，由於各樹脂 封装係由帶構件或連结樹脂部所連结著，所Μ從引埭框分 離也不會個個t零八落地散開•可使分離工程後之樹脂封 裝（半導體装置）之處理變為容易。 又，如依申誚専利範围第15項所述之發明•則 由於可將構成樹脂封装之各層樹脂之種類作成各異* 所K可謀求半専«装置之特性提高。 又·如依申請専利範園第16項所述之發明，則 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝· 訂 34 3u2529 a? Β7 五、發明説明（32 ) 由於金靥突起及金屬膜可發揮跟BGA型半導體装置之 焊錫突起相等之機能*因此可提高安裝性。 又•如fe申請專利範画第17項所述之發明，則 用來形成最下層之金羼横（引線框）變成不需要，可 謀求成本之減低。 〔圔式之簡單說明〕 第1圈係本發明第一實施例之半専«装置的斷面圃； 第2圖係本發明第一實施例之半導體装置的底面園； 第3圈係本發明第一賁施例之半専體装置的透視圈； 第4圈係將金靥膜（一層）放大顬示之豳； 第5困係將金靨膜（二層）放大顯示之圔； 第6_係將金屬膜（三層）放大顯示之圖； 第7圈係將金羼膜（四雇）放大顯示之圖； 第8_係用以說明引線框形成方法之一實例圈（保 謂膜塗佈工程）； 第9圖係用Μ說明引線框形成方法之一霣腌例圓（保 護膜圓案形成工程）； 經濟部中央樣隼局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 第1〇匯係用Μ說明引線框形成方法之一實施例圖（胜 刻工程）； 第11國係用Μ說明一形成在引線框之供®部的圃； 第12圔係用Μ說明供電部之其他構成的圃； 第13圖係用Μ說明引線形成方法之一實施例圔（金羼 膜形成工程）； 第14_係顯示完成的引線框之斷面圃； 本紙張尺度適用中國國家橾準（CNS ) Α4規格（2丨0Χ297公釐） 35 經濟部中央標準局貝工消費合作社印製 Α7 Β7 A'發明説明（33) 第15圆係用Μ說明半導«装置製造方法之一實施例圏 (元件裝載工程）； 第16_係用Μ說明半専體装置製造方法之一實施例圖 (連接工程）； 第Π圖係用以說明半導體装置形成方法中之連接工程 的變形例圖； 第18圖係用Μ說明半導«装置製造方法之一簧施例圈 (密封工程）； 第19圖係顯示密封工程終了的引線框之斷面圖； 第20_係顯示密封工程終了的引線框之平面圖及側面 0Β ; 第21圖係用Μ說明半専髖形成方法之一實施例画（箝 設置工程）； 第22_係用以說明半導體形成方法之一實施例圖（分 離工程）； 第2 3圖係顯示密封工程终了的半専體装置之平面圖及 側面_ ; 第24圖係用Μ說明半導體裝置製造方法中之密封工程 的第一變形例圔； 第25圈係顬示對引線框寅施帶設置工程之狀態圔； 第26圃係用Μ說明半導髖装置製造方法中之密封工程 的第二變形例圈； 第2 7圖為平面及側面圖，係顯示完成第二變形例之密 封工程之狀態的引線框； 本紙張尺度逋用中國國家標準（CNS ) Α4規格（210Χ297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝. 訂 36 五、發明説明（34 ) A7 B7 經濟部中央標準局負工消费合作社印製 第28鼷係用以說明本發明製造方法中之分離工程的费 形例圈； 第2 9|«係本發明第二實施例之半導體装置的斷面麵； 第3 0圈係用以說明本發明第二實施例之半導體装置之 金羼膜形成方法的画（形成基片）； 第31匾係用以說明本發明第二實施例之半導體装置之 金羼膜形成方法的鼷（形成保護膜）； 第3 2画係用以說明本發明第二賁施例之半導體装置之 金雇膜形成方法的圖（半蝕刻）； 第33圃係用以說明本發明第二實施例之半導體裝置之 金属膜形成方法的晒（電鍍處理）； 第34圓係用以說明本發明第二賁施例之半導髓装置之 金羼膜形成方法的圖（剝離保護膜）； 第3 5圖係用Μ說明本發明第二實施例之半導髓装置之 金靥膜形成方法的圃（塗佈感光性樹脂）； 第3 6_係用Μ說明本發明第二實腌例之半導體装置之 金羼膜形成方法的臞（形成貫穿孔）； 第37鼷係用以說明本發明第二實施例之半専班装置之 金屬膜形成方法的圈（霣鍍處理）； 第38匾係用Μ說明本發明第二實施例之半導體装置之 金屬膜形成方法的圖（形成保護膜）； 第3 9圖係用Κ說明本發明第二實腌例之半導髑装置之 金饜膜形成方法的圖（蝕刻及剝離保護膜）； 第4 Q圖係本發明第三實施例之半専嫌装置的斷面圔； (請先閱讀背面之注意事項再填寫本頁) 裝- 訂 Λ 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X2S»7公釐） 37 經濟部中央標準局員工消费合作社印製 A7 B7 五、發明説明（35 ) 第41圖係用以說明本發明第三實施例之半導«裝置之 金屬膜形成方法的圔（形成基片）； 第42画係用Μ說明本發明第三實施例之半専»裝置之 金觸膜形成方法的圖（形成保護膜）； 第4 3圖係用Μ說明本發明第三實施例之半導體装置之 金羼膜形成方法的圓（半蝕刻）； 第44圓係用以說明本發明第三實施例之半専體装置之 金屬膜形成方法的鼷（霣鍍處理）； 第45圈係用Μ說明本發明第三實施例之半導艚裝置之 金屬膜形成方法的圖（剝離保護膜）； 第4 6圖係用Μ說明本發明第三實施例之半導體装置之 金羼膜形成方法的圖（塗佈感光性樹脂）； 第47圖係用Μ說明本發明第三實施例之半専髖装置之 金屬膜形成方法的圖（開窗處理）； 第48圖係用Μ說明本發明第三實胨例之半導體裝置之 金羼膜形成方法的圓（電鍍處理）； 第4 9圓係用Μ說明本發明第三賁施例之半導«装置之 金雇膜形成方法的圔（形成保護膜）； 第5 0圖係用Μ說明本發明第三賁施例之半導«裝置之 金颺膜形成方法的圖（蝕刻及剝離保護膜）； 第51圖係本發明第四資施例的半導Η装置之斷面圈； 第52圏係用Μ說明習知半導«装置之一例的圈；及 第53圖係用Κ說明習知半導髏装置之一例的圖。 本紙張尺度適用中國國家標準（CNS &gt; Α4規格（210Χ297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝· 訂 38 五、發明説明（36 ) 〔符號之說明〕 A7 B7 經濟部中央標準局員工消費合作社印製 10 ， 50 * 70 * 80 半導《装置 11 半導»元件 12 ， 51， 81 樹脂封装 13 ， 13A〜13D ， 55 金觸膜 13B-1 · 13C-1 · 13D-1 外餍 13C-2 中間靥 13D-2 第一中間層 13D-3 第二中間曆 13B-2 * 13C-3 - 13D-4 内層 14 電極墊 17，54 樹脂突起 18 電線 20，29 引線框 21 金羼基材 22 » 58 凹部 24 蝕刻保護膜 24a，61 保護膜Η案 25 供霣部 26 框狀部 27 連结部 28 引線框單元 33 帶構件 34 流道框 (請先閱讀背面之注意事項再填寫本頁) -裝.In addition, according to the invention claimed in Item 11 of the patent application park, Pui U peeled off the resin package from the lead frame in the separation process. "This can easily separate the resin package from the lead frame. In addition, according to the invention described in item 12 of the application scope, in the separation process • dissolve the lead frame and leave the gold film K to separate the resin package • hiding this can reliably and easily separate the resin package from the lead frame. In addition, according to the inventions described in Items 13 and 14 of the patent application scope *, even if a plurality of resin packages are formed on the lead frame, each resin package is connected by a belt member or a connecting resin part, Therefore, the separation from the lead frame will not be scattered in a scattered manner. • The handling of the resin package (semiconductor device) after the separation process can be facilitated. In addition, according to the invention described in item 15 of the application scope, since the types of resins constituting the resin encapsulation layer can be made to be different * K can seek to improve the characteristics of the device. In addition, if according to the invention mentioned in Article 16 of the application, the paper size is applicable to the Chinese National Standard (CNS) Α4 specification (210Χ297mm) (please read the precautions on the back and fill in this page) -installed Order 34 3u2529 a? Β7 5. Description of the invention (32) Since the gold lug bumps and metal film can play the same function as the solder bumps of the BGA type semiconductor device *, the mountability can be improved. In addition, if the invention described in item 17 of the patent application for fe is used, the gold layer (lead frame) used to form the lowermost layer becomes unnecessary, and cost reduction can be achieved. [Simple description of the formula] The first circle is the half-section of the device of the first embodiment of the present invention; FIG. 2 is the bottom surface of the semiconductor device of the first embodiment of the present invention; the third circle is the present invention The perspective circle of the half-body device of the first Ben embodiment; the fourth circle is the magnifying film of the gold film (one layer) enlarged; the fifth sleepy is the magnifying display of the gold film (second layer); sixth _ Is an enlarged view of the metal film (three layers); the seventh circle is an enlarged view of the gold film (four hires); the eighth is an example circle used to explain the formation method of the lead frame (bao said film) Coating project); Figure 9 uses M to explain one of the lead frame forming methods (preservation film round project formation process); Printed by the Consumer Cooperative of the Central Falcon Bureau of the Ministry of Economic Affairs (please read the notes on the back first (Fill in this page again) The 10th collection system uses M to illustrate an example of a method of forming a lead frame (Shengke Project); the 11th country uses M to describe a nursery formed in the supply section of the lead frame; Use M to describe the other parts of the power supply section; Figure 13 uses M to describe the implementation of one of the lead forming methods Example (Golden film formation project); Section 14_ shows the cross-section nursery of the completed lead frame; This paper scale is applicable to China National Standards (CNS) Α4 specification (2 丨 0Χ297mm) 35 Central Bureau of Standards, Ministry of Economic Affairs Beigong Consumer Cooperative Printed A7 Β7 A 'Description of the Invention (33) The 15th circle uses M to describe an example of a semiconducting «device manufacturing method (component loading process); the 16th department uses M to describe a half-body device An embodiment diagram of a manufacturing method (connection process); FIG. Π is a diagram illustrating a modification of the connection process in the method of forming a semiconductor device; FIG. 18 is a spring embodiment of a semiconductor manufacturing method of EMI Circle (sealing project); Figure 19 shows the cross-sectional view of the lead frame at the end of the sealing process; Figure 20_ shows the plan view and side surface of the lead frame at the end of the sealing process 0B; Figure 21 shows the formation of the half-hip hip with Μ Example drawing of one method (clamp setting project); Figure 22_ is a diagram illustrating an example of a semiconductor forming method (separation project); Figure 23 shows the plan view and side view of the half-body device with the sealing process completed _; Figure 24 The first modification of the sealing process in the manufacturing method of the semiconductor device is described with Μ; the 25th circle shows the state of the tape installation process for the lead frame; the 26th garden is used to explain the manufacturing method of the semi-conductive hip device The second modification circle of the sealing project; Figure 27 is a plan view and a side view, which shows the lead frame showing the state of the completion of the sealing project of the second modification; This paper scale uses the Chinese National Standard (CNS) Α4 specification ( 210Χ297mm) (Please read the precautions on the back before filling in this page)-Packing. Order 36 5. Description of invention (34) A7 B7 The 28th printed by the Ministry of Economic Affairs Central Standards Bureau Negative Work Consumer Cooperative is used to explain this The cost-shaped example circle of the separation process in the manufacturing method of the invention; No. 2 9 | «is the cross section of the semiconductor device of the second embodiment of the invention; the No. 30 circle is used to explain the semiconductor device of the second embodiment of the invention A picture of a method of forming a gold film (forming a substrate); a 31st plaque is a film (a protective film) used to describe a method of forming a gold film of a semiconductor device according to a second embodiment of the present invention; To illustrate the invention Figure 2 shows a method of forming a gold film for a semiconductor device of the second embodiment (semi-etching); No. 33 is a sun exposure (electroplating process) for explaining a method for forming a metal film of a semiconductor device of the second embodiment of the present invention; No. 34 The circle is a diagram for explaining the method of forming the gold film of the semi-conducting device of the second embodiment of the present invention (peeling the protective film); FIG. 35 shows the semi-conducting device of the second embodiment of the present invention with M A method of forming a film of gold film (coating photosensitive resin); Section 36 is a description of a method of forming a gold film on a semiconductor device of the second embodiment of the present invention (forming a through hole) with M; The ring is used to explain the method of forming the metal film of the half-level device of the second embodiment of the present invention (engraved plating process); the 38th plaque is the method of forming the metal film of the semiconductor device of the second embodiment of the present invention with M Figure (Forming a protective film); Figure 39 is a diagram illustrating the method of forming the gold film of the semi-conducting device of the second embodiment of the present invention (etching and peeling the protective film) with K; Figure 4Q is the original The cross-section of the semi-intrusive device of the third embodiment of the invention ; (Please read the precautions on the back and then fill out this page) Binding-Order Λ This paper size is applicable to China National Standard (CNS) Α4 specification (210X2S »7mm) 37 Printed by the Ministry of Economic Affairs Central Standards Bureau Employee Consumer Cooperative A7 B7 Fifth, the description of the invention (35) Figure 41 is used to explain the third embodiment of the present invention, the semiconductor film forming method of semi-conducting device (substrate formation); Picture 42 is the third embodiment of the present invention with Μ An example of a half-point »device gold contact film forming method (forming a protective film); FIG. 43 is a circle (half etching) illustrating the method for forming a gold film of a semiconductor device according to a third embodiment of the present invention with M; The 44th circle is used to explain the method of forming the metal film of the half-membrane device of the third embodiment of the present invention. The 45th circle uses M to describe the semiconducting stern device of the third embodiment of the present invention. Diagram of a method of forming a metal film (peeling protective film); FIG. 46 is a diagram illustrating a method of forming a gold film of a semiconductor device according to a third embodiment of the present invention with M (coating photosensitive resin); FIG. 47 is for M illustrates the third embodiment of the present invention Diagram of the method of forming the metal film of the hip device (windowing process); FIG. 48 is a circle (plating process) illustrating the method of forming the gold film of the semiconductor device of the third example of the present invention with M; Describe the semiconducting «apparatus of the third embodiment of the present invention« golden film forming method (form a protective film); FIG. 50 is used to illustrate the semiconducting «device of the third embodiment of the present invention </ i> Diagram of the method of forming the gold film (etching and peeling of the protective film); FIG. 51 is the cross-section circle of the semiconductive semiconductor device of the fourth embodiment of the present invention; An example of a circle; and Figure 53 is a diagram illustrating an example of a conventional semi-conductor device with K. The size of this paper is applicable to the Chinese National Standard (CNS> Α4 specification (210Χ297mm) (please read the precautions on the back before filling in this page)-Binding · Order 38 5. Description of the invention (36) [Description of symbols] A7 B7 Printed 10, 50 * 70 * 80 semi-conducting "device 11 semi-conducting» components 12, 51, 81 resin package 13, 13A ~ 13D, 55 gold touch film 13B-1 · 13C-1 · 13D-1 outer layer 13C-2 middle layer 13D-2 first middle layer 13D-3 second middle calendar 13B-2 * 13C-3-13D-4 inner layer 14 electrode pads 17, 54 resin protrusions 18 wires 20, 29 Lead frame 21 Jin Jin substrate 22 »58 recessed part 24 etching protective film 24a, 61 protective film H case 25 supply part 26 frame part 27 connection part 28 lead frame unit 33 band member 34 runner frame (please read the note on the back first Please fill out this page again)-Install.

、1T, 1T

J ij 本紙張尺度適用中國國家標隼（CNS〉A4規格（210X29*?公釐〉 39 ϋ 8 經濟部中央標準局員工消費合作杜印製 2529 五、發明説明（37 ) 35 外部霣極膜 52 * 82 上部樹脂部 53 · 83 下部樹脂部 56 · 72 連接锺極 57 貫穿孔 60 導電性金屬膜 62 下方延出部 63 * 74 接合部 71 金羼突起 73 - 84 孔部 83 樹脂帶 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） 40J ij This paper scale is applicable to China ’s National Standard Falcon (CNS> A4 specification (210X29 *? Mm) 39 ϋ 8 Printed by the Consumer Standards Bureau of the Ministry of Economic Affairs of the People ’s Republic of China 2529 V. Invention description (37) 35 External membrane 52 * 82 Upper resin part 53 · 83 Lower resin part 56 · 72 Connection pin 57 Through hole 60 Conductive metal film 62 Lower extension part 63 * 74 Joint part 71 Gold protrusion 73-84 Hole part 83 Resin tape (please first Read the precautions on the back and then fill out this page) This paper standard is applicable to China National Standard (CNS) Α4 specification (210Χ297mm) 40

Claims (1)

A8 B8 C8 D8 修正 綠^衣帅月和 夂、申請專利範圍 第85107011號專利申請案申請專利範圍修正本 修正日期：85年12月 1. 一種半導體裝置，包含有： 半導體元件； 樹脂封裝，其係用Μ密封該半導體元件； 樹腊突起，其係突出形成在該樹脂封裝之安裝侧 面； 金颶膜，其係設置在該樹脂突起；及 連接機構，係用Μ電接前述半導體元件上之電極 墊片與前述金颶膜。 2. 依據申請專利範圍第1項之半導體裝置，其中 前述金羼膜，係由銀（Ag)及鈀（Pd)中之一値所形 成。 3. 依據申請專利範圍第1項之半導體裝置，其中 前述金羼膜，係由從外層起鈀（Pd)層及金（Au)層 之二層所形成。 4. 依據申謓專利範圍第1項之半導體裝置，其中 前述金屬膜係由 從外層起金（Au)層、鎳（NU層、金（Au&gt;層之三層 膜， 從外層起耙（Pd&gt;層、鎳（NU層、耙（Pd)層之三層 膜， 從外層起金（Au)層、鈀（Pd)層、金（Au)層之三層 膜， 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X297公嫠） --------「裝-----.I 訂·------^.VJt (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 41 經濟部中央標準局員工消費合作社印製 Α8 Β8 C8 D8 六、申請專利範圍 從外層起焊錫層、鎳（Ni)層、金（Au)層之三層膜 ，及 從外層起焊錫層、鎳（Ni)層、耙（Pd)靥之三層膜 中之一個三層膜所形成。 5.依據申請專利範圍第1項之半導體裝置，其中前述金 鼷膜係由： 從外層起焊錫層、錁（Ni)層、鈀（Pd)層、金（Au&gt; 層之四層膜，及 從外層起耙（Pd)層、鎳（Ni)層、鈀（Pd)層、金（ Au)層之四層膜 中之一個四層膜所形成。 6·依據申請專利範圍第1項乃至第5項中任一項之半導 體裝置，其中製造該半導體裝置時使用之引線框，包 含有： 凹部，其係形成在與前述樹脂突起對應之位置； 及 申請專利範圍第1項乃至第5項之任一項所述之 金颶膜，係形成在該凹部。 7.—種引線框之製造方法，其係申請專利範圍第6項之 引線框之製造方法者，包含有： 保護膜塗佈工程--將蝕刻保護膜塗佈於基材兩 面； 保護膜圖案形成工程--除去一對應於前述蝕刻 保護膜之凹部形成位置的部位，Μ形成一保護膜圖案； (請先閲讀背面之注意事項再填寫本頁) 装· 、tT 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -42 - 42 經濟部中央標準局員工消費合作社印製 A8 B8 C8 ____D8 六、申請專利範圍 蝕刻工程--於前述基片之前述凹部形成位置， 形成凹部； 金屬膜形成工程--於該蝕刻工程所形成之凹部 內，形成申請專利範圍第1項乃至第11項之任一項所 逑之金屬膜；及 保護膜除去工程--除去前述蝕刻保護膜。 8. 依據申請專利範圍第7項所述之製造方法，其中： 前述金靨膜形成工程係使用電鍍法來形成前述金 屬膜；同時 前述保護膜圖案形成工程也用來除去一對應於供 電部之位置的前述蝕刻保護膜，該供電部係連接於一 用於前述電鍍處理之電極。 9. 一種使用申請專利範圍第6項之引線框的半導體裝置 之製造方法，包含有： 元件裝載工程將半導體元件裝載於前述引線 框； 連接工程_ -電接一形成在前述半導體元件之電 極墊，與一形成在前述引線框之前述金颶膜； 密封工程--在前述引線框上形成樹脂以形成樹 脂封裝，K便密封前述半導體元件；及 分離工程--從前述引線框分離前述金屬膜及前 述樹脂封裝，或，溶解前述引線框而留下前述金羼膜 K分離前述樹脂封裝。 10.依據申請專利範圍第9項之半導髏裝置之製造方法， 本紙張尺度適用中國國家標準（CNS〉A4規格（210X297公釐） ----.----叫·装-- (請先閲讀背面之注意事項再填寫本頁) 訂·· A8 B8 C8 D8 六、申請專利範圍 其中前述連接工程除使用線接合法作為電接前述電極 塾與前述金屬膜之方法外，並同時先將電線之一端連 接於前述金羼膜，接箸從前述金靨膜引出電線至前述 電極墊之後，將電線之另一端部連接於前述電極墊。 11. 依據申請專利範圍第9或10項之半導體裝置之製造方 法，其中前述密封工程除Μ多數値分別獨立的構成， 總括起來形成前述樹脂封裝於前述引線框上外，同時 並包含一帶設置工程，其係於前述樹脂封裝之形成前 、或形成後，設置用來連結前述多數個樹脂封裝的帶 構件。 12. 依據申請專利範圍第9或10項之半導體裝置之製造方 法，其中在前述密封工程中，除由多數値各獨立之連 結樹脂部所連接之構成，總括起來形成前述樹脂封裝 於前述引線框上外，同時並包含一連結樹脂除去工程， 其係於前述分離工程之實施後除去前述連結樹脂部。 13. —種半導體裝置，包含有： 半導體元件； 樹脂封裝，其係用以密封該半導體元件； 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本買) 金屬膜，其係設置在該樹脂封裝之安裝面；及 連接機構，係用Μ電接前述半導體元件上之電極 墊與前述金羼膜；其中前述樹腊封裝，至少由上下兩 層之樹脂部所構成。 14. 依據申請專利範圍第13項之半導體裝置，其中位置於 前述樹脂封裝之最下層之前述樹脂部，係具有突出形 本紙張尺度逋用中國國家標準（CNS ) Α4規格（210X297公釐） _ _ A8 B8 C8 D8 々、申請專利範圍 成在前述安裝面之樹脂突起；且，前述金屬膜，係形 成在該樹脂突起。 15.依據申請專利範圍第13項之半導體裝置，其中前述位 置在樹脂封裝最下層之樹脂部，係由絕緣性樹脂帶所 形成。 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) AA規格（210 X 297公嫠） 45A8 B8 C8 D8 Amendment Green ^ Yi Shuaiyuehe, Patent Application No. 85107011 Patent Application Amendment Scope of Amendment Date: December 1985 1. A semiconductor device, including: semiconductor components; resin encapsulation, which The semiconductor element is sealed with Μ; the wax protrusion, which protrudes is formed on the mounting side of the resin package; the gold hurricane film, which is provided on the resin protrusion; and the connection mechanism, which is electrically connected to the aforementioned semiconductor element with Μ Electrode pad and the aforementioned gold hurricane membrane. 2. The semiconductor device according to item 1 of the patent application scope, wherein the aforementioned gold film is formed of one of silver (Ag) and palladium (Pd). 3. The semiconductor device according to item 1 of the scope of patent application, wherein the aforementioned gold film is formed of two layers of a palladium (Pd) layer and a gold (Au) layer from the outer layer. 4. The semiconductor device according to item 1 of the patent application scope, wherein the aforementioned metal film is composed of a three-layer film of gold (Au) layer from the outer layer, nickel (NU layer, gold (Au> layer), and rake from the outer layer (Pd> ; Three-layer film of layer, nickel (NU layer, rake (Pd) layer, three-layer film of gold (Au) layer, palladium (Pd) layer, gold (Au) layer from the outer layer, the paper size is applicable to Chinese national standards (CNS) A4 specification (21〇X297 gong mai) -------- "installed -----. I order · -------- ^. VJt (Please read the notes on the back before filling in This page) Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 41 Printed A8 Β8 C8 D8 by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 6. The scope of the patent application starts from the outer layer of the solder layer, nickel (Ni) layer and gold (Au) layer The three-layer film, and one of the three-layer film from the outer layer of the solder layer, the nickel (Ni) layer, and the rake (Pd) tantalum layer. 5. The semiconductor device according to item 1 of the patent application scope, in which The aforementioned gold film is composed of: four layers of film from the outer layer: solder layer, 锞 (Ni) layer, palladium (Pd) layer, gold (Au> layer), and the rake from the outer layer ( Pd) layer, nickel (Ni) layer, palladium (Pd) layer, gold (Au) layer, one of the four-layer film. 6. According to any one of the first to fifth patent application The semiconductor device of item 1, wherein the lead frame used in manufacturing the semiconductor device includes: a recessed portion formed at a position corresponding to the aforementioned resin protrusion; and any one of items 1 to 5 of the patent application scope The gold hurricane film is formed in the recess. 7. A method of manufacturing a lead frame, which is a method of manufacturing a lead frame according to item 6 of the scope of patent application, includes: Protective film coating process-etching protection The film is coated on both sides of the substrate; the protective film pattern formation process-remove a portion corresponding to the position where the concave portion of the etching protective film is formed, Μ forms a protective film pattern; (please read the precautions on the back before filling this page) Installation ·, tT This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -42-42 Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A8 B8 C8 ____D8 VI. Patent application etching project- -Forming a concave portion at the position where the concave portion is formed on the substrate; forming a metal film-forming a metal film according to any one of claims 1 to 11 in the concave portion formed by the etching process ; And protective film removal process-remove the aforementioned etching protective film. 8. According to the manufacturing method described in item 7 of the scope of the patent application, wherein: the aforementioned metal film formation process uses a plating method to form the aforementioned metal film; while the aforementioned protection The film pattern forming process is also used to remove the aforementioned etching protection film corresponding to the position of the power supply portion, which is connected to an electrode used for the aforementioned plating process. 9. A method for manufacturing a semiconductor device using a lead frame according to item 6 of the patent scope, including: component mounting process to load a semiconductor component on the lead frame; connection process--electrically connecting an electrode pad formed on the semiconductor component , And a gold film formed on the lead frame; sealing process-forming a resin on the lead frame to form a resin package, K will seal the semiconductor element; and separation process-separating the metal film from the lead frame And the resin package, or the lead frame is dissolved to leave the gold film K to separate the resin package. 10. According to the manufacturing method of the semi-conducting skeleton device according to item 9 of the scope of patent application, this paper scale is applicable to the Chinese National Standard (CNS> A4 specification (210X297 mm) ----.---- called · installed-- ( Please read the precautions on the back before filling in this page) Order ·· A8 B8 C8 D8 6. The scope of the patent application In addition to using the wire bonding method as the method of electrically connecting the aforementioned electrode pads and the aforementioned metal film, the above connection works shall Connect one end of the wire to the gold film, connect the wire from the gold film to the electrode pad, and then connect the other end of the wire to the electrode pad. 11. According to item 9 or 10 of the patent application A method of manufacturing a semiconductor device, wherein the sealing process includes a separate structure of M and M, and collectively forms the resin package on the lead frame, and also includes a belt installation process, which is before the formation of the resin package, or After the formation, a belt member for connecting the plurality of resin packages described above is provided. 12. According to the method of manufacturing a semiconductor device according to item 9 or 10 of the patent application scope, the first In the sealing process, in addition to being composed of a plurality of independent connection resin parts, the resin package is formed on the lead frame, and a connection resin removal process is also included, which is implemented in the separation process. Then remove the aforementioned connection resin part. 13. A semiconductor device, including: a semiconductor element; a resin package, which is used to seal the semiconductor element; printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the notes on the back first (Fill in the purchase) metal film, which is installed on the mounting surface of the resin package; and the connection mechanism is to use M to electrically connect the electrode pad on the semiconductor element and the gold film; wherein the tree wax package, at least by the upper and lower The two-layer resin part is composed of 14. The semiconductor device according to item 13 of the patent application scope, in which the aforementioned resin part located at the bottom layer of the aforementioned resin encapsulation, has a prominent form, and the paper standard adopts the Chinese National Standard (CNS) Α4 specification (210X297mm) _ _ A8 B8 C8 D8 々, the scope of patent application is to be installed in the aforementioned The resin protrusions; and, the aforementioned metal film is formed on the resin protrusions. 15. The semiconductor device according to item 13 of the patent application range, wherein the resin portion at the lowermost position of the resin package is formed of an insulating resin tape (Please read the precautions on the back before filling out this page) The paper standard printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs is applicable to the Chinese National Standard (CNS) AA specification (210 X 297 gong) 45
TW085107011A 1995-12-12 1996-06-11 The semiconductor device & its manufacturing method TW302529B (en)

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