TW440942B - Anisotropic dry etching method - Google Patents

Anisotropic dry etching method Download PDF

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Publication number
TW440942B
TW440942B TW088100636A TW88100636A TW440942B TW 440942 B TW440942 B TW 440942B TW 088100636 A TW088100636 A TW 088100636A TW 88100636 A TW88100636 A TW 88100636A TW 440942 B TW440942 B TW 440942B
Authority
TW
Taiwan
Prior art keywords
gas
film
silicon
etching method
dry etching
Prior art date
Application number
TW088100636A
Other languages
English (en)
Chinese (zh)
Inventor
Keiichi Harashima
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW440942B publication Critical patent/TW440942B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW088100636A 1998-01-20 1999-01-16 Anisotropic dry etching method TW440942B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10009096A JPH11214355A (ja) 1998-01-20 1998-01-20 異方性ドライエッチング方法

Publications (1)

Publication Number Publication Date
TW440942B true TW440942B (en) 2001-06-16

Family

ID=11711094

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088100636A TW440942B (en) 1998-01-20 1999-01-16 Anisotropic dry etching method

Country Status (5)

Country Link
JP (1) JPH11214355A (ja)
KR (1) KR19990067997A (ja)
CN (1) CN1113396C (ja)
GB (1) GB2333268B (ja)
TW (1) TW440942B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4471243B2 (ja) 1999-08-27 2010-06-02 東京エレクトロン株式会社 エッチング方法およびプラズマ処理方法
JP2002252222A (ja) * 2001-02-22 2002-09-06 Nec Corp 半導体装置の製造方法、及び半導体装置
US20040087153A1 (en) 2002-10-31 2004-05-06 Yan Du Method of etching a silicon-containing dielectric material
JP5466756B2 (ja) * 2010-03-04 2014-04-09 東京エレクトロン株式会社 プラズマエッチング方法、半導体デバイスの製造方法、及びプラズマエッチング装置
US8501630B2 (en) * 2010-09-28 2013-08-06 Tokyo Electron Limited Selective etch process for silicon nitride
CN103779203B (zh) * 2012-10-17 2016-11-02 株式会社日立高新技术 等离子蚀刻方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3420347A1 (de) * 1983-06-01 1984-12-06 Hitachi, Ltd., Tokio/Tokyo Gas und verfahren zum selektiven aetzen von siliciumnitrid
IT1213230B (it) * 1984-10-23 1989-12-14 Ates Componenti Elettron Processo planox a becco ridotto per la formazione di componenti elettronici integrati.
US5643473A (en) * 1987-07-31 1997-07-01 Hitachi, Ltd. Dry etching method

Also Published As

Publication number Publication date
CN1113396C (zh) 2003-07-02
KR19990067997A (ko) 1999-08-25
GB9901151D0 (en) 1999-03-10
GB2333268A (en) 1999-07-21
GB2333268B (en) 2000-01-19
CN1224235A (zh) 1999-07-28
JPH11214355A (ja) 1999-08-06

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees