GB2333268B - Anisotropic dry etching method - Google Patents

Anisotropic dry etching method

Info

Publication number
GB2333268B
GB2333268B GB9901151A GB9901151A GB2333268B GB 2333268 B GB2333268 B GB 2333268B GB 9901151 A GB9901151 A GB 9901151A GB 9901151 A GB9901151 A GB 9901151A GB 2333268 B GB2333268 B GB 2333268B
Authority
GB
United Kingdom
Prior art keywords
dry etching
etching method
anisotropic dry
anisotropic
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9901151A
Other versions
GB9901151D0 (en
GB2333268A (en
Inventor
Keiichi Harashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB9901151D0 publication Critical patent/GB9901151D0/en
Publication of GB2333268A publication Critical patent/GB2333268A/en
Application granted granted Critical
Publication of GB2333268B publication Critical patent/GB2333268B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
GB9901151A 1998-01-20 1999-01-19 Anisotropic dry etching method Expired - Fee Related GB2333268B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10009096A JPH11214355A (en) 1998-01-20 1998-01-20 Anisotropic dry etching method

Publications (3)

Publication Number Publication Date
GB9901151D0 GB9901151D0 (en) 1999-03-10
GB2333268A GB2333268A (en) 1999-07-21
GB2333268B true GB2333268B (en) 2000-01-19

Family

ID=11711094

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9901151A Expired - Fee Related GB2333268B (en) 1998-01-20 1999-01-19 Anisotropic dry etching method

Country Status (5)

Country Link
JP (1) JPH11214355A (en)
KR (1) KR19990067997A (en)
CN (1) CN1113396C (en)
GB (1) GB2333268B (en)
TW (1) TW440942B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4471243B2 (en) 1999-08-27 2010-06-02 東京エレクトロン株式会社 Etching method and plasma processing method
JP2002252222A (en) * 2001-02-22 2002-09-06 Nec Corp Method for manufacturing semiconductor device, and the semiconductor device
US20040087153A1 (en) 2002-10-31 2004-05-06 Yan Du Method of etching a silicon-containing dielectric material
JP5466756B2 (en) * 2010-03-04 2014-04-09 東京エレクトロン株式会社 Plasma etching method, semiconductor device manufacturing method, and plasma etching apparatus
US8501630B2 (en) 2010-09-28 2013-08-06 Tokyo Electron Limited Selective etch process for silicon nitride
CN103779203B (en) * 2012-10-17 2016-11-02 株式会社日立高新技术 Plasma etching method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529476A (en) * 1983-06-01 1985-07-16 Showa Denko K.K. Gas for selectively etching silicon nitride and process for selectively etching silicon nitride with the gas
GB2165992A (en) * 1984-10-23 1986-04-23 Sgs Microelettronica Spa Reduced-beak planox process for the formation of integrated electronic components
US5643473A (en) * 1987-07-31 1997-07-01 Hitachi, Ltd. Dry etching method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529476A (en) * 1983-06-01 1985-07-16 Showa Denko K.K. Gas for selectively etching silicon nitride and process for selectively etching silicon nitride with the gas
GB2165992A (en) * 1984-10-23 1986-04-23 Sgs Microelettronica Spa Reduced-beak planox process for the formation of integrated electronic components
US5643473A (en) * 1987-07-31 1997-07-01 Hitachi, Ltd. Dry etching method

Also Published As

Publication number Publication date
CN1113396C (en) 2003-07-02
JPH11214355A (en) 1999-08-06
CN1224235A (en) 1999-07-28
GB9901151D0 (en) 1999-03-10
TW440942B (en) 2001-06-16
KR19990067997A (en) 1999-08-25
GB2333268A (en) 1999-07-21

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee