TW432464B - Unbalanced bipolar electrostatic chuck power supplies and methods therefor - Google Patents
Unbalanced bipolar electrostatic chuck power supplies and methods therefor Download PDFInfo
- Publication number
- TW432464B TW432464B TW087104757A TW87104757A TW432464B TW 432464 B TW432464 B TW 432464B TW 087104757 A TW087104757 A TW 087104757A TW 87104757 A TW87104757 A TW 87104757A TW 432464 B TW432464 B TW 432464B
- Authority
- TW
- Taiwan
- Prior art keywords
- power supply
- voltage
- unbalanced
- coupled
- node
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000012545 processing Methods 0.000 claims abstract description 19
- 230000008878 coupling Effects 0.000 claims abstract description 10
- 238000010168 coupling process Methods 0.000 claims abstract description 10
- 238000005859 coupling reaction Methods 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 10
- 230000002079 cooperative effect Effects 0.000 claims description 8
- 238000012937 correction Methods 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 claims 4
- 238000005259 measurement Methods 0.000 claims 1
- 238000005303 weighing Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 64
- 239000001307 helium Substances 0.000 description 14
- 229910052734 helium Inorganic materials 0.000 description 14
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 230000008901 benefit Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000003068 static effect Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 101100148253 Mus musculus Rttn gene Proteins 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/824,104 US5835335A (en) | 1997-03-26 | 1997-03-26 | Unbalanced bipolar electrostatic chuck power supplies and methods thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW432464B true TW432464B (en) | 2001-05-01 |
Family
ID=25240591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087104757A TW432464B (en) | 1997-03-26 | 1998-03-26 | Unbalanced bipolar electrostatic chuck power supplies and methods therefor |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5835335A (enExample) |
| EP (1) | EP0970517B1 (enExample) |
| JP (1) | JP4169792B2 (enExample) |
| KR (1) | KR100538599B1 (enExample) |
| AT (1) | ATE328365T1 (enExample) |
| DE (1) | DE69834716T2 (enExample) |
| TW (1) | TW432464B (enExample) |
| WO (1) | WO1998043291A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI553696B (zh) * | 2013-12-17 | 2016-10-11 | Plasma processing device and its substrate DC bias voltage measurement method | |
| TWI683216B (zh) * | 2017-11-13 | 2020-01-21 | 日商歐姆龍股份有限公司 | 電源系統、電源裝置的動作狀態顯示法以及程式 |
| CN112635381A (zh) * | 2019-10-08 | 2021-04-09 | 长鑫存储技术有限公司 | 控制方法、控制系统及半导体制造设备 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5953200A (en) * | 1998-02-05 | 1999-09-14 | Vlsi Technology, Inc. | Multiple pole electrostatic chuck with self healing mechanism for wafer clamping |
| US6346428B1 (en) * | 1998-08-17 | 2002-02-12 | Tegal Corporation | Method and apparatus for minimizing semiconductor wafer arcing during semiconductor wafer processing |
| US6361645B1 (en) * | 1998-10-08 | 2002-03-26 | Lam Research Corporation | Method and device for compensating wafer bias in a plasma processing chamber |
| US6188564B1 (en) * | 1999-03-31 | 2001-02-13 | Lam Research Corporation | Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber |
| KR20010007406A (ko) * | 1999-06-17 | 2001-01-26 | 조셉 제이. 스위니 | 정전 처크에 의해 발생한 정전력 균형을 맞추는 방법 및장치 |
| TW454320B (en) * | 2000-05-12 | 2001-09-11 | Siliconware Precision Industries Co Ltd | Semiconductor devices with heat-dissipation stiffener and manufacturing method thereof |
| JP2003115442A (ja) * | 2001-10-04 | 2003-04-18 | Nikon Corp | 荷電粒子線露光装置におけるレチクル又はウエハの静電チャック方法 |
| US6898065B2 (en) * | 2002-07-26 | 2005-05-24 | Brad Mays | Method and apparatus for operating an electrostatic chuck in a semiconductor substrate processing system |
| US7026174B2 (en) * | 2002-09-30 | 2006-04-11 | Lam Research Corporation | Method for reducing wafer arcing |
| JP4532410B2 (ja) * | 2003-06-17 | 2010-08-25 | 株式会社クリエイティブ テクノロジー | 双極型静電チャック |
| JP2005182494A (ja) * | 2003-12-19 | 2005-07-07 | Mitsubishi Electric Corp | 電流増幅回路およびそれを備える液晶表示装置 |
| US20120140362A1 (en) * | 2010-12-02 | 2012-06-07 | Mathew Robins | Method of Operating a Heating Element for Underfloor Heating |
| US9076831B2 (en) * | 2011-11-04 | 2015-07-07 | Lam Research Corporation | Substrate clamping system and method for operating the same |
| US9754809B2 (en) * | 2013-11-11 | 2017-09-05 | Western Alliance Bank | Tri-modal carrier for a semiconductive wafer |
| US10236202B2 (en) * | 2013-11-11 | 2019-03-19 | Diablo Capital, Inc. | System and method for adhering a semiconductive wafer to a mobile electrostatic carrier through a vacuum |
| EP3399545B1 (en) * | 2017-05-04 | 2021-09-29 | Meyer Burger (Germany) GmbH | Substrate treatment system |
| GB202310034D0 (en) * | 2023-06-30 | 2023-08-16 | Spts Technologies Ltd | Plasma etching method and apparatus |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4692836A (en) * | 1983-10-31 | 1987-09-08 | Toshiba Kikai Kabushiki Kaisha | Electrostatic chucks |
| DE3705866A1 (de) * | 1987-02-24 | 1988-09-01 | Siemens Ag | Schaltungsanordnung zum erzeugen von symmetrischen ausgangsspannungen |
| JP2779950B2 (ja) * | 1989-04-25 | 1998-07-23 | 東陶機器株式会社 | 静電チャックの電圧印加方法および電圧印加装置 |
| DE69103915T2 (de) * | 1990-01-25 | 1995-05-11 | Applied Materials Inc | Elektrostatische Klemmvorrichtung und Verfahren. |
| US5325261A (en) * | 1991-05-17 | 1994-06-28 | Unisearch Limited | Electrostatic chuck with improved release |
| US5557215A (en) * | 1993-05-12 | 1996-09-17 | Tokyo Electron Limited | Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus |
| US5463525A (en) * | 1993-12-20 | 1995-10-31 | International Business Machines Corporation | Guard ring electrostatic chuck |
| US5467249A (en) * | 1993-12-20 | 1995-11-14 | International Business Machines Corporation | Electrostatic chuck with reference electrode |
| US5535507A (en) * | 1993-12-20 | 1996-07-16 | International Business Machines Corporation | Method of making electrostatic chuck with oxide insulator |
| US5708250A (en) * | 1996-03-29 | 1998-01-13 | Lam Resarch Corporation | Voltage controller for electrostatic chuck of vacuum plasma processors |
| US5812361A (en) * | 1996-03-29 | 1998-09-22 | Lam Research Corporation | Dynamic feedback electrostatic wafer chuck |
-
1997
- 1997-03-26 US US08/824,104 patent/US5835335A/en not_active Expired - Lifetime
-
1998
- 1998-03-24 DE DE69834716T patent/DE69834716T2/de not_active Expired - Lifetime
- 1998-03-24 WO PCT/US1998/005676 patent/WO1998043291A1/en not_active Ceased
- 1998-03-24 JP JP54588298A patent/JP4169792B2/ja not_active Expired - Fee Related
- 1998-03-24 AT AT98911954T patent/ATE328365T1/de not_active IP Right Cessation
- 1998-03-24 EP EP98911954A patent/EP0970517B1/en not_active Expired - Lifetime
- 1998-03-24 KR KR10-1999-7008778A patent/KR100538599B1/ko not_active Expired - Fee Related
- 1998-03-26 TW TW087104757A patent/TW432464B/zh not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI553696B (zh) * | 2013-12-17 | 2016-10-11 | Plasma processing device and its substrate DC bias voltage measurement method | |
| TWI683216B (zh) * | 2017-11-13 | 2020-01-21 | 日商歐姆龍股份有限公司 | 電源系統、電源裝置的動作狀態顯示法以及程式 |
| CN112635381A (zh) * | 2019-10-08 | 2021-04-09 | 长鑫存储技术有限公司 | 控制方法、控制系统及半导体制造设备 |
| CN112635381B (zh) * | 2019-10-08 | 2022-03-22 | 长鑫存储技术有限公司 | 控制方法、控制系统及半导体制造设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69834716T2 (de) | 2007-05-03 |
| US5835335A (en) | 1998-11-10 |
| EP0970517B1 (en) | 2006-05-31 |
| EP0970517A1 (en) | 2000-01-12 |
| KR100538599B1 (ko) | 2005-12-22 |
| KR20010005710A (ko) | 2001-01-15 |
| JP2001525123A (ja) | 2001-12-04 |
| WO1998043291A1 (en) | 1998-10-01 |
| JP4169792B2 (ja) | 2008-10-22 |
| DE69834716D1 (de) | 2006-07-06 |
| ATE328365T1 (de) | 2006-06-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |