TW429600B - Semiconductor device and production process thereof - Google Patents
Semiconductor device and production process thereofInfo
- Publication number
- TW429600B TW429600B TW088120162A TW88120162A TW429600B TW 429600 B TW429600 B TW 429600B TW 088120162 A TW088120162 A TW 088120162A TW 88120162 A TW88120162 A TW 88120162A TW 429600 B TW429600 B TW 429600B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating film
- semiconductor device
- production process
- lower electrode
- metal layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10337660A JP2000164812A (ja) | 1998-11-27 | 1998-11-27 | 半導体装置及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW429600B true TW429600B (en) | 2001-04-11 |
Family
ID=18310757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088120162A TW429600B (en) | 1998-11-27 | 1999-11-18 | Semiconductor device and production process thereof |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6495874B1 (zh) |
| JP (1) | JP2000164812A (zh) |
| KR (1) | KR100372047B1 (zh) |
| TW (1) | TW429600B (zh) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19959711A1 (de) * | 1999-12-10 | 2001-06-21 | Infineon Technologies Ag | Verfahren zur Herstellung einer strukturierten Metallschicht |
| US6498364B1 (en) * | 2000-01-21 | 2002-12-24 | Agere Systems Inc. | Capacitor for integration with copper damascene processes |
| US6368953B1 (en) * | 2000-05-09 | 2002-04-09 | International Business Machines Corporation | Encapsulated metal structures for semiconductor devices and MIM capacitors including the same |
| JP4671497B2 (ja) * | 2000-12-15 | 2011-04-20 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| CN1653590A (zh) * | 2001-03-21 | 2005-08-10 | 皇家菲利浦电子有限公司 | 电子设备 |
| JP4094904B2 (ja) * | 2002-07-22 | 2008-06-04 | 三菱電機株式会社 | 半導体装置 |
| US7112504B2 (en) * | 2003-10-28 | 2006-09-26 | Taiwan Semiconductor Manufacturing Company | Method of forming metal-insulator-metal (MIM) capacitors at copper process |
| JP2007294514A (ja) * | 2006-04-21 | 2007-11-08 | Renesas Technology Corp | 半導体装置 |
| JP4785623B2 (ja) | 2006-05-31 | 2011-10-05 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| US7468525B2 (en) * | 2006-12-05 | 2008-12-23 | Spansion Llc | Test structures for development of metal-insulator-metal (MIM) devices |
| US8143699B2 (en) * | 2009-02-25 | 2012-03-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual-dielectric MIM capacitors for system-on-chip applications |
| JP2011055015A (ja) * | 2010-12-16 | 2011-03-17 | Renesas Electronics Corp | 半導体装置 |
| US20120211866A1 (en) * | 2011-02-17 | 2012-08-23 | Systems On Silicon Manufacturing Co. Pte. Ltd. | Metal-insulator-metal capacitor and a method of fabricating the same |
| CN117293123A (zh) * | 2022-06-20 | 2023-12-26 | 屹世半导体(上海)有限公司 | 高压隔离器件及其制作方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07115171A (ja) | 1993-10-15 | 1995-05-02 | Murata Mfg Co Ltd | Ｍｉｍキャパシタ |
| JP2759631B2 (ja) * | 1995-09-04 | 1998-05-28 | エルジイ・セミコン・カンパニイ・リミテッド | 半導体メモリセル及びその製造方法 |
| JP3055494B2 (ja) * | 1997-06-10 | 2000-06-26 | 日本電気株式会社 | 強誘電体メモリ及びその製造方法 |
| US6180976B1 (en) * | 1999-02-02 | 2001-01-30 | Conexant Systems, Inc. | Thin-film capacitors and methods for forming the same |
-
1998
- 1998-11-27 JP JP10337660A patent/JP2000164812A/ja active Pending
-
1999
- 1999-11-18 US US09/443,007 patent/US6495874B1/en not_active Expired - Lifetime
- 1999-11-18 TW TW088120162A patent/TW429600B/zh not_active IP Right Cessation
- 1999-11-24 KR KR10-1999-0052479A patent/KR100372047B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000164812A (ja) | 2000-06-16 |
| KR100372047B1 (ko) | 2003-02-14 |
| KR20000035659A (ko) | 2000-06-26 |
| US6495874B1 (en) | 2002-12-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |