TW428040B - Method of depositing an amorphous fluorocarbon film using HDP-CVD - Google Patents
Method of depositing an amorphous fluorocarbon film using HDP-CVDInfo
- Publication number
- TW428040B TW428040B TW087112994A TW87112994A TW428040B TW 428040 B TW428040 B TW 428040B TW 087112994 A TW087112994 A TW 087112994A TW 87112994 A TW87112994 A TW 87112994A TW 428040 B TW428040 B TW 428040B
- Authority
- TW
- Taiwan
- Prior art keywords
- depositing
- film
- amorphous fluorocarbon
- fluorocarbon film
- adhesion
- Prior art date
Links
- 238000000151 deposition Methods 0.000 title abstract 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000007833 carbon precursor Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/948,799 US6211065B1 (en) | 1997-10-10 | 1997-10-10 | Method of depositing and amorphous fluorocarbon film using HDP-CVD |
Publications (1)
Publication Number | Publication Date |
---|---|
TW428040B true TW428040B (en) | 2001-04-01 |
Family
ID=25488260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087112994A TW428040B (en) | 1997-10-10 | 1998-08-06 | Method of depositing an amorphous fluorocarbon film using HDP-CVD |
Country Status (4)
Country | Link |
---|---|
US (1) | US6211065B1 (zh) |
JP (1) | JP2001520454A (zh) |
TW (1) | TW428040B (zh) |
WO (1) | WO1999019533A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI426545B (zh) * | 2006-06-28 | 2014-02-11 | Applied Materials Inc | 沉積具有改進密度與階梯覆蓋率之非晶系碳膜的方法 |
CN113054865A (zh) * | 2021-03-23 | 2021-06-29 | 浙江大学 | 用于雨滴能收集的温室薄膜基摩擦纳米发电机及制备方法 |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6251758B1 (en) * | 1994-11-14 | 2001-06-26 | Applied Materials, Inc. | Construction of a film on a semiconductor wafer |
US6243112B1 (en) * | 1996-07-01 | 2001-06-05 | Xerox Corporation | High density remote plasma deposited fluoropolymer films |
US6746727B1 (en) * | 1998-08-24 | 2004-06-08 | Intel Corporation | Metal to ILD adhesion improvement by reactive sputtering |
US6271141B2 (en) * | 1999-03-23 | 2001-08-07 | Micron Technology, Inc. | Methods of forming materials over uneven surface topologies, and methods of forming insulative materials over and between conductive lines |
SG81281A1 (en) * | 1999-05-19 | 2001-06-19 | Tokyo Electron Ltd | Plasma thin-film deposition method |
JP4140674B2 (ja) | 1999-09-27 | 2008-08-27 | 東京エレクトロン株式会社 | 多孔質アモルファス膜の観察方法及びその観察装置 |
JP2001135630A (ja) * | 1999-11-10 | 2001-05-18 | Matsushita Electronics Industry Corp | 半導体装置の製造方法 |
JP4505915B2 (ja) * | 2000-01-13 | 2010-07-21 | 東京エレクトロン株式会社 | 成膜方法 |
US6573030B1 (en) * | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
JP2002194547A (ja) * | 2000-06-08 | 2002-07-10 | Applied Materials Inc | アモルファスカーボン層の堆積方法 |
US6559052B2 (en) | 2000-07-07 | 2003-05-06 | Applied Materials, Inc. | Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures |
US6614977B2 (en) | 2001-07-12 | 2003-09-02 | Little Optics, Inc. | Use of deuterated gases for the vapor deposition of thin films for low-loss optical devices and waveguides |
US7043133B2 (en) * | 2001-07-12 | 2006-05-09 | Little Optics, Inc. | Silicon-oxycarbide high index contrast, low-loss optical waveguides and integrated thermo-optic devices |
US7085616B2 (en) * | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US7067440B1 (en) * | 2001-08-24 | 2006-06-27 | Novellus Systems, Inc. | Gap fill for high aspect ratio structures |
KR100432378B1 (ko) * | 2001-08-30 | 2004-05-22 | 주성엔지니어링(주) | Hdp-cvd 장치 |
EP1448807A4 (en) * | 2001-10-30 | 2005-07-13 | Massachusetts Inst Technology | FLUORO CARBON ORGANOSILICIUM COPOLYMERS AND COATINGS MADE ACCORDING TO THE HFCVD PROCEDURE |
US6541397B1 (en) * | 2002-03-29 | 2003-04-01 | Applied Materials, Inc. | Removable amorphous carbon CMP stop |
US8524397B1 (en) | 2004-11-08 | 2013-09-03 | Quallion Llc | Battery having high rate and high capacity capabilities |
US7052802B2 (en) * | 2002-10-15 | 2006-05-30 | Quallion Llc | Fluorinated carbon active material |
US7122485B1 (en) | 2002-12-09 | 2006-10-17 | Novellus Systems, Inc. | Deposition profile modification through process chemistry |
JP3877692B2 (ja) * | 2003-03-28 | 2007-02-07 | 三洋電機株式会社 | 有機エレクトロルミネッセンス素子およびその製造方法 |
US7129180B2 (en) * | 2003-09-12 | 2006-10-31 | Micron Technology, Inc. | Masking structure having multiple layers including an amorphous carbon layer |
US7132201B2 (en) * | 2003-09-12 | 2006-11-07 | Micron Technology, Inc. | Transparent amorphous carbon structure in semiconductor devices |
US7344996B1 (en) | 2005-06-22 | 2008-03-18 | Novellus Systems, Inc. | Helium-based etch process in deposition-etch-deposition gap fill |
US7476621B1 (en) | 2003-12-10 | 2009-01-13 | Novellus Systems, Inc. | Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill |
US7163896B1 (en) | 2003-12-10 | 2007-01-16 | Novellus Systems, Inc. | Biased H2 etch process in deposition-etch-deposition gap fill |
WO2005087974A2 (en) * | 2004-03-05 | 2005-09-22 | Applied Materials, Inc. | Cvd processes for the deposition of amorphous carbon films |
US7638440B2 (en) * | 2004-03-12 | 2009-12-29 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for etch hardmask application |
US7079740B2 (en) * | 2004-03-12 | 2006-07-18 | Applied Materials, Inc. | Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides |
US20050199585A1 (en) * | 2004-03-12 | 2005-09-15 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for metal etch hardmask application |
US7384693B2 (en) * | 2004-04-28 | 2008-06-10 | Intel Corporation | Diamond-like carbon films with low dielectric constant and high mechanical strength |
US20070286965A1 (en) * | 2006-06-08 | 2007-12-13 | Martin Jay Seamons | Methods for the reduction and elimination of particulate contamination with cvd of amorphous carbon |
US7217658B1 (en) | 2004-09-07 | 2007-05-15 | Novellus Systems, Inc. | Process modulation to prevent structure erosion during gap fill |
US7176039B1 (en) | 2004-09-21 | 2007-02-13 | Novellus Systems, Inc. | Dynamic modification of gap fill process characteristics |
KR100589046B1 (ko) * | 2004-09-23 | 2006-06-12 | 삼성전자주식회사 | 박막 형성 방법 |
US7381451B1 (en) | 2004-11-17 | 2008-06-03 | Novellus Systems, Inc. | Strain engineering—HDP thin film with tensile stress for FEOL and other applications |
JP4541864B2 (ja) * | 2004-12-14 | 2010-09-08 | 東京エレクトロン株式会社 | シリコン酸窒化膜の形成方法、形成装置及びプログラム |
US7211525B1 (en) | 2005-03-16 | 2007-05-01 | Novellus Systems, Inc. | Hydrogen treatment enhanced gap fill |
US20070286954A1 (en) * | 2006-06-13 | 2007-12-13 | Applied Materials, Inc. | Methods for low temperature deposition of an amorphous carbon layer |
US7482245B1 (en) | 2006-06-20 | 2009-01-27 | Novellus Systems, Inc. | Stress profile modulation in STI gap fill |
US20080254233A1 (en) * | 2007-04-10 | 2008-10-16 | Kwangduk Douglas Lee | Plasma-induced charge damage control for plasma enhanced chemical vapor deposition processes |
US20090093128A1 (en) * | 2007-10-08 | 2009-04-09 | Martin Jay Seamons | Methods for high temperature deposition of an amorphous carbon layer |
US20090269923A1 (en) * | 2008-04-25 | 2009-10-29 | Lee Sang M | Adhesion and electromigration improvement between dielectric and conductive layers |
US8133797B2 (en) * | 2008-05-16 | 2012-03-13 | Novellus Systems, Inc. | Protective layer to enable damage free gap fill |
US7902641B2 (en) * | 2008-07-24 | 2011-03-08 | Tokyo Electron Limited | Semiconductor device and manufacturing method therefor |
KR101425760B1 (ko) * | 2010-08-27 | 2014-08-01 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법, 기판 처리 방법, 패턴 형성 방법, 반도체 소자의 제조 방법, 및 반도체 소자 |
US9653327B2 (en) | 2011-05-12 | 2017-05-16 | Applied Materials, Inc. | Methods of removing a material layer from a substrate using water vapor treatment |
WO2016187186A1 (en) | 2015-05-19 | 2016-11-24 | Corning Incorporated | Articles and methods for bonding sheets with carriers |
TWI821867B (zh) | 2016-08-31 | 2023-11-11 | 美商康寧公司 | 具以可控制式黏結的薄片之製品及製作其之方法 |
CN110073225B (zh) * | 2016-12-21 | 2021-11-26 | 日本碍子株式会社 | 电流检测用的耐热性元件 |
WO2019118660A1 (en) * | 2017-12-15 | 2019-06-20 | Corning Incorporated | Method for treating a substrate and method for making articles comprising bonded sheets |
US10840082B2 (en) * | 2018-08-09 | 2020-11-17 | Lam Research Corporation | Method to clean SnO2 film from chamber |
US20230008165A1 (en) * | 2021-07-08 | 2023-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for sealing a seam, semiconductor structure, and method for manufacturing the same |
CN114804016A (zh) * | 2022-04-26 | 2022-07-29 | 浙江大学 | 利用感应耦合等离子干法刻蚀提高摩擦电输出性能的方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4782380A (en) * | 1987-01-22 | 1988-11-01 | Advanced Micro Devices, Inc. | Multilayer interconnection for integrated circuit structure having two or more conductive metal layers |
US5246884A (en) | 1991-10-30 | 1993-09-21 | International Business Machines Corporation | Cvd diamond or diamond-like carbon for chemical-mechanical polish etch stop |
EP0661731B1 (en) | 1993-12-28 | 2000-05-31 | Applied Materials, Inc. | A single chamber CVD process for thin film transistors |
CA2157257C (en) | 1994-09-12 | 1999-08-10 | Kazuhiko Endo | Semiconductor device with amorphous carbon layer and method of fabricating the same |
KR0164149B1 (ko) * | 1995-03-28 | 1999-02-01 | 김주용 | 타이타늄 카보 나이트라이드층의 개질 방법 |
US5804259A (en) * | 1996-11-07 | 1998-09-08 | Applied Materials, Inc. | Method and apparatus for depositing a multilayered low dielectric constant film |
-
1997
- 1997-10-10 US US08/948,799 patent/US6211065B1/en not_active Expired - Lifetime
-
1998
- 1998-08-06 TW TW087112994A patent/TW428040B/zh not_active IP Right Cessation
- 1998-09-09 JP JP2000516080A patent/JP2001520454A/ja active Pending
- 1998-09-09 WO PCT/US1998/018832 patent/WO1999019533A1/en active Search and Examination
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI426545B (zh) * | 2006-06-28 | 2014-02-11 | Applied Materials Inc | 沉積具有改進密度與階梯覆蓋率之非晶系碳膜的方法 |
CN113054865A (zh) * | 2021-03-23 | 2021-06-29 | 浙江大学 | 用于雨滴能收集的温室薄膜基摩擦纳米发电机及制备方法 |
Also Published As
Publication number | Publication date |
---|---|
WO1999019533A1 (en) | 1999-04-22 |
US6211065B1 (en) | 2001-04-03 |
JP2001520454A (ja) | 2001-10-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW428040B (en) | Method of depositing an amorphous fluorocarbon film using HDP-CVD | |
US5227196A (en) | Method of forming a carbon film on a substrate made of an oxide material | |
WO1999062108A3 (en) | Methods for forming self-planarized dielectric layer for shallow trench isolation | |
WO2000016377A3 (en) | Method for forming a three-component nitride film containing metal and silicon | |
US5275850A (en) | Process for producing a magnetic disk having a metal containing hard carbon coating by plasma chemical vapor deposition under a negative self bias | |
GB2369829A (en) | Composite coatings | |
TW376545B (en) | Method of producing silicon layer having surface controlling to be even | |
AU554846B2 (en) | Disordered carbon and boron coatings | |
DE69736969D1 (de) | Verfahren zur Behandlung der Oberfläche von halbleitenden Substraten | |
WO2002064853A3 (en) | Thin films and methods of making them using trisilane | |
TW200605173A (en) | Method of controlling the film properties of a CVD-deposited silicon nitride film | |
AU2828197A (en) | Method for forming tin oxide coating on glass | |
TW335531B (en) | Gapfill and planarization process for shallow trench isolation | |
GB2363131C (en) | Soil-resistant coating for glass surfaces | |
TW370683B (en) | Semiconductor device with polysilicon layer of good crystallinity and its manufacture method | |
WO2000040773A3 (de) | Wärmeüberträger mit verringerter neigung, ablagerungen zu bilden und verfahren zu deren herstellung | |
TW353194B (en) | Coated deposition chamber equipment | |
AU2002359179A1 (en) | Coating method and coated devices | |
MY119325A (en) | Method of manufacturing bi-layered ferroelectric thin film | |
EP0845804A3 (en) | Pre-treatment of substrate before deposition of an insulating film | |
AU5973199A (en) | Method for the production of optical layers having uniform layer thickness | |
EP0932188A3 (en) | Glass formation on a semi-conductor wafer | |
WO2000013207A3 (en) | Method for forming a metal film | |
JP2571957B2 (ja) | バッファ層を介した炭素または炭素を主成分とする被膜及びその作製方法 | |
WO2002045147A3 (en) | Method for pretreating dielectric layers to enhance the adhesion of cvd metal layers thereto |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |