TW423131B - Wire bond attachment of a integrated circuit package to a heat sink - Google Patents
Wire bond attachment of a integrated circuit package to a heat sink Download PDFInfo
- Publication number
- TW423131B TW423131B TW088105209A TW88105209A TW423131B TW 423131 B TW423131 B TW 423131B TW 088105209 A TW088105209 A TW 088105209A TW 88105209 A TW88105209 A TW 88105209A TW 423131 B TW423131 B TW 423131B
- Authority
- TW
- Taiwan
- Prior art keywords
- heat sink
- package
- conductive surface
- mounting flange
- board
- Prior art date
Links
- 239000002356 single layer Substances 0.000 claims abstract description 7
- 230000002079 cooperative effect Effects 0.000 claims description 5
- 230000008646 thermal stress Effects 0.000 abstract description 3
- 230000000875 corresponding effect Effects 0.000 description 27
- 239000010410 layer Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000005476 soldering Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/45001—Core members of the connector
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H01L2224/4912—Layout
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- H01L2924/151—Die mounting substrate
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structure Of Printed Boards (AREA)
Description
423131 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 Μ A7 ----— _Β7______ 五、發明說明(1 ) 發明簌_ 所提發明屬於積體電路封裝範圍,且特別爲,將一積體 電路封裝固定至一散熱片上之安装配置。 背景 積體電路("ICs")在工業上自通信至消費電子均廣爲使 用。例如’一功率電晶體乃由一或多個電晶體單元在矽圓 片上组立而形成,一般稱之如電晶體"晶片"。電晶體晶片 接合於一常爲-陶磁基底爲熱傳導而非導片之絕緣層。陶磁 基雇本身接合至熱傳導之安裝凸緣上,—保護用蓋子將基 底與電晶體晶片蓋起並固定於凸緣上,如此形成一電晶體 1C”封裝"。 不同之電氣導電(例如薄金屬)之引線接至封装並自封裝 引出目的爲將電晶體晶片之共同端子連接至其他設置如附 近之印刷電路("PC”)板上。例如,一雙極接合型功率電晶 體各對應之引線接至封裝連接至電晶體晶片之基極,射極 及集極β 因爲電晶體封裝在使用中會產生大量之熱量,封裝安裝 凸緣之底部表面一般直接固定於PC板下一金屬散熱片上, 例如’ 一單—層PC板在相對立之上部及底部導電表面間有 一電介質材料層,其中底層表面功能如一參考接地。此底 層表面通常以螺絲或以錫焊接至下部之金屬散熱片上,如 此底層表面與散熱器相對於接至Pc板之上部表面之 電路元件而言爲同一接地電位。 ° 有數種已知之技術將一封裝固定至一散熱片表面上。例 ____ -4- 本紙張尺度適用中國因家標準(CNS)A4規格(210 X 297公爱)
423131 A7 B7
經濟部智慧財產局員工消費合作社印製 五、發明說明(2 ) 如如圖I所示’將封裝安裝凸緣26與散熱片22之表面間藉 一錫焊連接28將1C封裝20固定至散熱片22上之一例。 此一施做相當簡單,錫焊焊接材料28相對於安裝凸緣26 及散熱片22(標準金屬)具有不變之不同之熱膨脹係數。結 果,由於相對應之各層間熱膨脹應力特別當IC封裝受到每 次使用反覆之溫變化時使安裝凸緣與散熱片2 2間之結合變 弱甚至破壞。近爾加入之結合層28之存在可能使凸緣26與 散熱片22間之熱傳導效果減低。此種施做方式更進一步之 缺點爲,由於檢修或更換將IC封裝2〇予以移去時,爲了打 開錫焊結合2 8需將全部之教熱片予以加熱,如此使同一散 熱片2 2之其他錫焊結合之應力亦變弱。 參見圖2爲使用一錫焊結合之另一替代方式’ ic封裝2〇 利用一對螺絲24穿過位於安裝凸綠26之對應端之開孔將之 固疋至散熱片22上。參見圖3及4 ’如向上突出情形乃爲將 一1C封裝以一個或多個螺絲30插入至散熱片22來固定至散 熱片上。一有彈力之金屬帶32由螺絲30延伸形成如同在— 1C封裝20蓋子上加上一夾子’如此可獲得一確實之向中心 力將安裝凸26”固定”於散熱片上。 另有固定1C封裝至熱散片之方法揭示且記述於待審美國 專利申請案S/N 08/956,193發明名稱"固定一積體電路封裝 至一散熱片之安裝配置·',其亦併入此處供參考其全部所敎 導。在圖5中亦爲將1C封裝固定至一散熱器之另—方式, 其特點,爲一1C封裝40之保護蓋子50之上部表面上有一中 心突起物54。一有彈力之保持彈簧做成一帶形狀其帶狀曲 -5- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 1«---ΊΙΙΙΙΙ--- - I . (請先閱讀背面之注意事項-寫本頁 訂·_ -線- 4 23 彳 3 1 A7 B7 3 五、發明說明( 線底表面60上有一開孔合於中心突起物54處,帶狀曲線伸 延至具有相反之二端56及58 » 將一 1C封裝40安裝於一散熱片42上,可將保持彈簧開孔 62壓入配合之封裝蓋子突出物54上,且將ic封裝40及安 裝凸緣45插入並使確實平行於突出於散熱片42之牆44及 48上,雖然角度相反,結果使保持彈簧相對應二端56及 58自封裝子50延伸所得效果一樣。牆44及48相距有一段 距離以達成相反之保持彈簧二端56及58當凸緣45插入至 散熱片42上時’使相互間產生適當之餐力。 踏44及48二邊有相對應之多數之切口且64及68以"棘齒 ’’釋放方式確實平行於散熱片42上。一旦安裝凸緣45受力 壓至散熱片上’由於相對應牆上之切口 64及68使相反之彈 簧端56及58保持於原位。此—方式如箭頭7〇所示彈簧46 加支持力於封裝蓋子50上,如此安裝凸緣45在散熱片上即 予固定。 任何上面將1C封裝固定至一散熱片上之所示之方式,一 但將1C封裝固定至散熱片,電氣引線自封裝延伸出(圖卜5 未示出)必連接於相對立之即接合至散熱片位於靠近之pc 板之導電表面引線或導電面上。 見圖6可由圖示看出—Ic封裝8〇之安裝凸緣86經一慣常 之錫焊焊接84安裝至一散熱片82上。一單一層pc板“亦 同樣藉由靠近封裝80二側之螺絲(未示出)固定至散熱片82 上^ PC板包括有一金屬上部表面9〇,一電介質材料層 92,及一金屬底層表面94,其中底層表面94接於散熱器 -6 - 本紙張尺度適用中國國家標準(CNS)Ad榻这 [Ί 1 !1!裝 i—! — I 訂 -----—!線 (請先閲讀背面之注意事項-^:寫本頁) 經濟部智慧財產局員工消費合作杜印製 Μ V J \ 3 I" 4 23131 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(4 82上’其集合功能相對於接至pc板88之上部表面之電路 元件(未示出)而言如一參考接地。相對應之引線96及98自 相反之封裝8 0之二侧延伸並經相對立之錫焊焊接100及102 連接至在PC板88之上部表面90所形成之相屬之導電迴路 上〇 由於前述圖1使用錫焊以接合相對應之封裝凸緣(28)及 散熱片(2 2 )所造成之問題β錫焊連接10〇及丨〇2極易由二錫 焊材料間導電面90及相對應之(金屬)引線96及98因不同熱 膨張係數而產生問題。特別者,錫焊材料在多次之加熱及 冷卻後易成結晶使焊接1〇〇及102變弱及/或失敗,使相對 立之引線96及98蹺起且自PC板之表面脱離。 因之,提出將一1C元件封裝固定至一散熱片上避免使用 錫焊之改善配置是有其需要地。 發明摘要 本發明對一 1C元件封裝安裝至一散熱片上提出改善配置 方式爲由封裝延伸而出之引線與靠近之一 PC板表面相對應 之導電通路提供非焊踢底之連接β 在所選之具體實施例中,IC封装之熱傳導凸緣直接放置 於相對立接至散熱片上之單—層PC板層面間之散熱片上, 如此使封裝相反二側延伸之電氣引線在相對應之靠近之pc 板層面之表面所形成所屬導電表面上定位。按照發明之第 方面,相對立之封裝引線由一或數個软結合電線各自被 接於相屬之PC板面上《除封裝引線電氣連接至相對立之 PC板層面外,結合線將封裝集合安裝至散熱片之方式使相 t纸張尺度適財關家標準(CNS_)A4規格⑵G κ 297公^· I··---1------裝· ----- - - 訂 ------- -- 線 (請先閱讀背面之注意事項寫本頁) / 4 23 13 A7 B7 五 、發明說明( 5 對應之凸緣與散熱片表面間在熱應力反應下允許二者有侧 向之移動。 對精予此一技藝之士不難了解,其他及進一步之目的及 優點在此後予以説明之。 l-鱼重要説明 圖面示出本發明之設計及利用,其中在不同之具體實施 例中相似之元件爲便於顯示之目的均以相同之參考號碼作 爲參考,其中: 圖1爲一第一種先前技藝之安裝配置之侧面圖,其中一 封裝以錫焊或其他方式結合於一散熱片上; 圖2爲一第二種先前技藝之安裝配置之部分切割之侧面 圖,其中使用安裝螺絲直接將一 1C封装固定至一散熱片 上。 圖3爲一第三種先前技藝之安裝配置之側面圖,其中一單 一保持螺絲及保持帶自此延伸用以固定一 1C封裝至—散熱 片上〇 圖4爲一第四種先前技藝之安裝配置之側面圖,其中一對 保持螺絲及一保持帶在其中延伸用作將一 1C封裝固定至一 散熱片上。 圖5爲仍爲進一步之將一 IC固定至一散熱片之配置部分 切割之侧面圖’其一有彈力之,帶狀保持彈簧附著於—封 裝保護蓋子之中心上,且以一對相反由散熱片上突出之牆 來使之定於原位。 圖6爲一 1C封裝以錫焊結合至一散熱片之部分切割之侧 ____ _ 8 · 11!1!裝 i I C諳先閱讀背面之注意事項寫本頁) 訂- -線- 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格⑵〇 297公釐) 423131 A7 B7 五、發明說明(6 面圖,藉由在一靠近PC板導電表面引線經一先前技藝以錫 焊焊接連接至相對應自封裝延伸之引線上。 圖7爲一所選之功率電晶體封裝接合至一散熱片乃利用— 多數之軟結合電線將由封裝延伸相對應之引線連接至散熱 片靠近PC板層面所形成之導電表面上之頂視圖;及 圖8爲圖7配置之一部分切割之侧面圖。 所選具體實施例之詳細説明 參見圖7,一功率電晶體封裝110在接合至散熱片112之 單一層PC板板之第一及第二層面Π3及114間之一散熱片上 定位。功率電晶體i 10包括接至一侧13〇上之一第一多數之 引線117 ’ 119及121 ’及接至一相反侧132上之一第二多數 之引線137 ’ 139及141。特別者,封裝11〇定位於散熱片 上,其第一侧13 0之電氣引線117,119及12 1在相對應之第 一 PC板層面113表面所形成相屬之導電表面U6 6 118及 120上延伸及在相反側132之電氣引線137,139及141在相 對應之第二PC板層面II4表面所形成相屬之導電表面136, 138及140上延伸。 在一所選之具體實施例中,導電面116,118,120, 136,138,及140乃由相對應之第一及第二pc板層面113 及114之導電之(即金屬之)上部表面選擇性之將部分予以除 去而將下部電介質材料115予以露出而形成者。電介質材 料115之露出面其功能如·-非導電之限界以限定相對應之 導電面 116,118,120,136,138,及 140。 電晶體封裝引線117,119,121,137,139及141以相對 -9- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) —-----------裝— (請先閲請背面之注f項ri寫本頁) :5J* i線- 經濟部智慧財產局員工消費合作社印製 423131 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(7 ) 應之多數之彈力之導電結合電線122,124,126,142, 144及146連接至相屬之導電pc板面116,118,120, 136 ’ 138 ’ 及 140 上。結合電線 122,124,126,142, 144,及146最好由適當材料如鋁,金,或—鋁合金在集合 將封裝110固定至散熱片之同時亦將封裝引線,119, 121,137 ’ 139及141與PC板相對立之PC板面116,118, 120 ’ 136,138及140電氣耦合。 更特別者,相對應之多數結合電氣電線122,124, 126 ’ 142,144及146結合於相對應之導電PC板面116, 118,120,130,138及140之一端及在封裝引線1Π , 119,121,137,139及141之另一端。每一單獨之結合線 之結合最好採慣常之方式例如已知之超音波電線之結合技 術將相對應之導電面與封裝引線連接。 由圖8可以看出’有彈力之電線提供一與相對應之封裝引 線相反之力其方向如箭頭15 0所示,如此將電晶體封裝11 〇 下之安裝凸緣152壓向散熱片112。因封裝凸緣152並非固 定於原位’顯示之安裝架構相對於散熱片允許封裝11〇向 侧向移動如箭頭128所示,可避免任何其他原因而生之熱 應力。近爾’採結合線將封裝引線117,119,121,137, 139,及U1與相對應之導電Pc板面116,ι18,120, 136 ’ 138,及140連接可使錫焊連接不再需要最少有此一 優點。 所選具體實施例已揭示如改善之將一1C封裝固定至一散 熱片之安裝配置’在本發明之具體實施例及應用上示出及 10- C請先閱讀背面之注$項再彡·,片本頁) •裝· —訂 線
干 I Μ 公 4 23 13 1 " A7 B7 五、發明說明(8 ) 説明中,對熟於此一技藝之士很顯然能在不達背發明之概 念下是有可能由此做出許多修改及應用的。 因之,發明之範圍除所附之申請專利範圍外均不設限。 -n n l^i It I * n (請先閱讀背面之注意事項-Y寫本頁) J 0 . 言 -線 經濟部智慧財產局員工消費合作社印製 •11 本紙張尺度過用t國國家標準(CNTS)A4規格(210 X 297公釐)
Claims (1)
- A8 B8 C8 D8 423131 I 六、申請專利範圍 1. 一種電氣组合,包含: —積禮電路封裝包括一安裝凸緣及一電氣引線,電氣 引線接至封裝並自此向外延伸; 一散熱片’安裝凸緣直接與散熱片接觸; 一導電表面在靠近積體電路封裝處接合至散熱片;及 —多數有彈力,導電電線之一端接至導電表面及另一 端接至電氣引線’電線將安裝凸緣固定至散熱片上。 2. 如申請專利範圍第1項之電氣組合,其中導電表面包括 一單一層PC板。 3. 如申請專利範圍第1項之電氣組合,其中安裝凸緣相對 於散熱片爲側向可移動者。 4. 一種電氣電路組合,包含: —積體電路封裝,封裝包括一安裝凸緣; 矛 电氣引線接至封裝之一第一側並由此延仲; 一第二電氣引線接至封裝之第二侧,並自此延伸; 一散熱片’安裝凸緣直接定位於並與散熱片接觸; 一第一導電表面在靠近封裝之第一侧處接合至散熱 片; 一第二導電表面在靠近封裝之第二側處接合至散熱 片; 、 一第一多數之有彈力,導電之電線之一端接至第一導 電表面,及另一端接至第—電氣引線;及 一第二多數之有彈力,導電之電線之一端接至第二導 電表面’及另一端接至第二電氣引線; -12- 本紙張从適财g國家標準(CNS ) (請先閲讀背面之注意事項再橡寫本頁) -裝 訂 經濟部智慧財產局員工消費合作社印製 4 23131 A8 B8 CS D8 六、申請專利範圍 第一及第二多數之電線將凸緣固定至散熱片爲可 移動者。 _ι 5. 如申請專利範圍第4項之電^合,其中與一第一及第 二導電表面包含一單一層pc_ 6. 如申請專利範圍第4项之電合,其中安裝凸緣相對 於散熱片爲側向可移動者。 3/ W (請先閱讀背面之注意事項再填寫本頁) -裝 訂 經濟部智慧財產局員工消費合作社印製 -13- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)
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-
1998
- 1998-04-03 US US09/054,973 patent/US5933327A/en not_active Expired - Fee Related
-
1999
- 1999-03-29 JP JP2000542799A patent/JP2002510880A/ja active Pending
- 1999-03-29 WO PCT/US1999/006879 patent/WO1999052147A1/en not_active Application Discontinuation
- 1999-03-29 CN CN99804454A patent/CN1299520A/zh active Pending
- 1999-03-29 AU AU33707/99A patent/AU3370799A/en not_active Abandoned
- 1999-03-29 CA CA002327331A patent/CA2327331A1/en not_active Abandoned
- 1999-03-29 KR KR1020007011007A patent/KR20010074468A/ko not_active Application Discontinuation
- 1999-03-29 EP EP99915111A patent/EP1068639A1/en not_active Withdrawn
- 1999-04-01 TW TW088105209A patent/TW423131B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
AU3370799A (en) | 1999-10-25 |
CN1299520A (zh) | 2001-06-13 |
KR20010074468A (ko) | 2001-08-04 |
CA2327331A1 (en) | 1999-10-14 |
WO1999052147A1 (en) | 1999-10-14 |
US5933327A (en) | 1999-08-03 |
JP2002510880A (ja) | 2002-04-09 |
EP1068639A1 (en) | 2001-01-17 |
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