TW399284B - Process for manufacture of integrated circuit device - Google Patents
Process for manufacture of integrated circuit device Download PDFInfo
- Publication number
- TW399284B TW399284B TW087118434A TW87118434A TW399284B TW 399284 B TW399284 B TW 399284B TW 087118434 A TW087118434 A TW 087118434A TW 87118434 A TW87118434 A TW 87118434A TW 399284 B TW399284 B TW 399284B
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- Taiwan
- Prior art keywords
- patent application
- organic amine
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- item
- dielectric
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000008569 process Effects 0.000 title abstract description 3
- 238000004519 manufacturing process Methods 0.000 title description 4
- 150000001412 amines Chemical class 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000009835 boiling Methods 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- KBXJHRABGYYAFC-UHFFFAOYSA-N octaphenylsilsesquioxane Chemical compound O1[Si](O2)(C=3C=CC=CC=3)O[Si](O3)(C=4C=CC=CC=4)O[Si](O4)(C=5C=CC=CC=5)O[Si]1(C=1C=CC=CC=1)O[Si](O1)(C=5C=CC=CC=5)O[Si]2(C=2C=CC=CC=2)O[Si]3(C=2C=CC=CC=2)O[Si]41C1=CC=CC=C1 KBXJHRABGYYAFC-UHFFFAOYSA-N 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 229930185605 Bisphenol Natural products 0.000 claims 1
- 125000006177 alkyl benzyl group Chemical group 0.000 claims 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 238000005096 rolling process Methods 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 abstract description 5
- 239000002243 precursor Substances 0.000 abstract description 2
- 239000007859 condensation product Substances 0.000 abstract 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 239000008267 milk Substances 0.000 description 3
- 210000004080 milk Anatomy 0.000 description 3
- 235000013336 milk Nutrition 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000002689 soil Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- -1 Siloxanes Chemical class 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- YHJNMGZIBULJHN-UHFFFAOYSA-N C1(=CC=CC=2C3=CC=CC=C3CC12)N(CCO)CCO Chemical compound C1(=CC=CC=2C3=CC=CC=C3CC12)N(CCO)CCO YHJNMGZIBULJHN-UHFFFAOYSA-N 0.000 description 1
- BEAVAQZQURDUJJ-UHFFFAOYSA-N CC1=C(C(CC2)CCC2N)C(C(CC2)CCC2N)=CC=C1 Chemical compound CC1=C(C(CC2)CCC2N)C(C(CC2)CCC2N)=CC=C1 BEAVAQZQURDUJJ-UHFFFAOYSA-N 0.000 description 1
- 206010011224 Cough Diseases 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 241001674048 Phthiraptera Species 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 244000018633 Prunus armeniaca Species 0.000 description 1
- 235000009827 Prunus armeniaca Nutrition 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 241000270708 Testudinidae Species 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- GUVUOGQBMYCBQP-UHFFFAOYSA-N dmpu Chemical compound CN1CCCN(C)C1=O GUVUOGQBMYCBQP-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 244000000013 helminth Species 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- JACMPVXHEARCBO-UHFFFAOYSA-N n-pentylpentan-1-amine Chemical compound CCCCCNCCCCC JACMPVXHEARCBO-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 210000004916 vomit Anatomy 0.000 description 1
- 230000008673 vomiting Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
五、發明說明（1) 本發明與積體電路 在微 片，增加 續不斷之 電路線寬 並避免在 先前 摻雜物燒 、舍吉 貌溶液以 為一介電 電子方面 .何，矽倍 之層時在 理中不會 因之 物及方法 其他 電子工業中多 其電路密度以 需求。為完成 及介電材料之 製造積體電路 技藝中用於積 結加於—基底 應用上需拫高 商標AS-418由 材料。—氫化 由道康寧公司 半氧烷之瞑特 製造時較傾向 龜裂之—低介 在積體電路裝 為本發明之目 之目的及優點 本發明與做成— 發明方法中之介電組合 15〇 c為高之一有機胺 (1 1)置於
苐6頁 記憶體 低其成 片其最 及減低 裂最為 電材料 電層。 〜甲基 出用於 商構FCX )買出: 介電層 厚螟成 之需求 改良之 月包明暗 發明範圍 裝薏中製造介電層 發明背景 層積體電路裝置如 便増加其性能及減 此〜目的，縮小晶 插入層性之改善以 裝見時介·電層之龜 體電路裝置中之介 上如一膜以成形介 之不適當之溫度。 阿利氏信號公司買 矽倍半氧烷溶液以 (Dow Corning ς〇 別為用於微電子之 於龜裂。故容易以 電组合物有其繼續 置之成形上提供」 的。 "Τ由以下之揭示更 發明摘要 電路裝置之〜種方 物包括矽倍半氧炫^ 積體電路包括丨土） <方法有關 及邏輯晶 本為一繼 小外型如 介電常數 需要。 為破壤之 不幸，燒 石夕倍半氧 微電子做 :用於微 5無論如 上需較厚 形且在處 〇 介電組合 /έτ Β 3 月關。用於本 及有 $ —沸點較 基底，r 、 ί五、發明說明—^7 路線上戎以電路線，及(1⑴置於靠、斤 介電材之—介電材料。在積=電路線(在電 積體氧院網狀縮合。…路裝置中之 之-熱縮合膜1之^形之方法包括—非—入 有-滞點較高於150。低分子重量之矽倍半氣二f L ^ „ b(JC之一有牆肚甘/, T乳烧先質及具 2 :>谷解於—有機溶液中。古土 ase)。石夕倍半氧燒 良其特性之介電組合成網狀縮合結果獲得一一；:; 本發明之進—牛_ $ f 細說明之》 /坪|之揭示依以下及併η七9 并同有關圖面詳 圖1，為本發明之^圖^面主要說明 阁。 積體電路裝置之—加 ® ^分之橫截面 圖2 ~ 5示出本取 m ' 衣成積體電路之 圖6〜8，不出本：之-種之方法。 法。 成積粗電路之〜種替代之方 圖1所示為由本發發明之詳細說明 體實施例。裝置普通包方π:體電路裝置之 能為裝置中分配電氣信號及對Ϊ置：；；8。t路線之功 出。適當之積體電路裝置力輪入及信^ 之多層電路線。 σ芏直金屬栓相互％名
U中所用之適當之基底包含， 一 多岸：2物及其他已知精於此1 :，矽鍺，矽氧化 有層；；！路裝置中'絕緣之下心適當之基底。在 辱成平面之電路線亦 物 多層 能有—基底之功 銅 適备之電路線一般包括一金屬 外覆η，*:銀或合金。視需要電氣導電，材料諸如 如錄’叙或鉻及/或並 電路線f以金屬層 nN)層。 其他如〜點合(如S1N, 本發明之方法包括在基底上置“ ，泉間之介電層之成形。在多声略电路線上及/或電路 層做成之平面俾以光刻電路線之=二路裝置中通常以介電t 功能》 〜層成形以達成基底之 適當之矽倍半氧烷用於本發 者所熟知。用於本發明中適心：：電為精於此-技藝 τ週田之矽倍半氧烷為苯基或烷基 /本q基不可取代或可取代之烷基（如Ci4_烷基）。矽倍半氧 烧最好為烧基（甲基）苯基矽倍半氧烧例如商業上可購得者 (如俄亥俄州波瑞堡技術破璃公司之GR 6 5 0及9 5 0 )。其他適 當之矽倍半氧烷為精於此技藝者所熟知並已揭示於美國專 利 5,384,376 及化學觀察（Chei Rev.) 95， 1 409- 1 430 (1 9 9 5 )，僅揭示於此以供參考。用於本發明之方法中之矽 倍半氧烷為部分縮合之矽倍半氧烷最好具有一分子重量心 此少於1 5 0 〇且最好少於1 0 0 0。矽倍半氧烷可視需要混合从 四烷氧基矽烷如’四乙氧基矽烷，烷基/三烷氧基或三鹵 矽酸鹽，或三烴/二烧氧基’或二氣碎酸鹽（d i h a 1 〇
第8頁 五、發明說明C4) silicates) ° 用於本發明之方法中之適當之有機胺基包括具有沸點 較高於150°C之初‘次，第二及第三之脂族及芳族有機胺， 最好採溫度較高於175 t，更好採較高於2〇(rc者。適當之 胺包括羥基取代胺如羥烷基胺如，二乙醇胺及N—曱基二乙 醇胺及N-,羥胺如，N-羥烷基苯基胺如，N_乙基_n_羥胺； Γ二胺一二基二胺：胺如雙(4~胺基環己基)甲烧；雙 丄 及N_甲基（3,3，~二氧-5 5, 一新 基）二戊基胺。其他適當之肱盔於 虱b，5 一尹工 如_，氨化物或氨基。其他適當之：已揭乳結合之取代基 (:ngel〇poulos)及其他，美國專利I”。：安琪玻拉斯 參考。其他適當之胺為精於此一技’僅揭示於 凸吐4、— j π刀丁里取/士物杏 亞知或氨基代替之聚越。 ^ 烧有梏冷站為丨—β Α丄&應為易於；谷於開始 烧有機溶解劑之溶液中 參見圖2 ’本發明之 超基取代之胺1可為分子量聚合；：：熟知。最 兑胺或Ji其从彗夕取*^ 巧可如，聚乙稀 之石夕倍半 驟包括右其忘9 '種方法之具體實施例之笛 。秸在一基底2上以本 W之弟—步 奴之介電组合物之處理層 礼烷先質及有機 亩夕六 尽或膜10。如圖所示^ 直之金屬栓8。非水之介恭 丁此基底2有垂 氧烷-k A丄 1兒組合物被溶解於以脸n 有檣、八 > 艰，合剜内溶解以形成一玄、产 千 另喊洛劑包括N，Ν’二甲其工 岭液。適當- 甲其τ暴丙二 （DMPU)，Nm 、田- 酯或類似4勿。胺適當濃声治"—τ軋是、丙醆乙酯 /克。在基底上採如，旋轉夕倍么氧:“°，1至 <轉，洛逛忐喑脔洗防. 1基醚醋酸薛，乳醆乙能 MP，丙二醇單 ^ ^ ^ .万—曱乳基丙酸乙酯，γ _ τ 2厘莫 ’浸染或噴覆或醫生刀刃嗔 米為大之厚°此膜有―較〇·5微 米。此溶液在高===米：最，係大於1.5微 較重量百分之30為高之低 阿於里里之百分之20最好 隙内成平面形並獲得咳屋，^，如此在基底上可充填於間 以斜向方式來遞升；護㈣。方法之第二步騾包括 :低之溫胺基摧化擴展及交互縮合反應可使在 古之·弗點Γ=一較咼之養護結果。胺有一較1 50 °C為
埶旦菸+虱烷之縮合時及其在縮合反應完成 熱里移去及仍能保留其原位。 A 參見圖3，方法之坌二丰现、 組合物膜i。上以形成上二物加加模印於介電 一 y成，·且σ物之層中溝1 2 (.壓低）。圖3中所 不蔣八 至基底2且至金屬栓8。光刻之模印—般包括 ⑴將二“且合物之層10覆以正及負之光致抗蝕劑這些可 由伸浦來或何器斯替克倫斯（ShlpUy 〇r H〇eehst 一
CelaneseKAZ光致抗蝕劑）購得；（i丨）向影像（經一屏蔽） 方向將光致抗蝕劑暴露至如電磁場之幅射，如’ uv或包括 193毫微米（1^)深” ；（lil)如以適當之基本顯像液在抗蝕 劑内將影像顯像；及（1V)經過介電組合物層1〇將影像用一 適當轉化技術如離子束反應刻蝕R丨Ε轉化至基底2 :適當之 光刻之模印技術為精於此一技藝者所熟知如揭示於湯木生 (Thompson)及其他之"微光刻介紹（Intr〇ductiQn二
Microlithography’’（ 1 9 94 ))，僅揭示於此以供參考。 參考圖4〗方法之第四步驟為本發明之積體電路中一 五、發明說明（6) i金屬膜1 4被沈積至於模印之介電層1 0内成形。所採之金屬 材料包括銅，鎢，及鉛或合金。金屬於模印介電中之適當 沈積為已知之技術如濺射，雷射蒸發，化學蒸發沈積 (C V D ) C V D加強漿，電或非電之沈積，濺射，或相以類。 參考圖5，方法之最後一步驟包括移去多餘之金屬材 料及全部晶片表面平面化使其膜1 4與模印化之介電層1 0有 一相同之水平。可利用化學/機械方式予以磨光或採溫或
I 乾刻來完成之。適當之化學/機械磨光方法為精於此一技 藝者所熟知。 | 參考圖6-8，所示為本發明製做積體電路之一代替方 |法之具體實施例。在具體實施例中方法之第一步包括沈積 I 一金屬層16至一基底18。基底18亦有垂直之金屬拴20。方 I法之第二步驟請參考圖7金屬層經屏蔽被光刻之模印成形 I溝22。方法之第三步驟參考圖8為本發明之介電組合物之 ! 一層24成沈積至模印之金屬膜16内。本方法之最後步驟為 | I組合物加熱至矽倍半氧烷完全縮合。視需要在一多層積體 | . i
丨電路中介電層其本身之後續程序為予以平面化。 I ! 本發明之介電組合物有一較3.0為低之介電常數，最 丨 好較2..7為低。甚至在80°G時最好較2. 5為低。組合物有增 丨 ;加之機械強度及光滑特性，且有提高之熱安定性及提高之 ； 丨介電特性。更有即使在厚膜（如厚度較高於1. 0微米）甚至 丨 丨在高溫度下此介電組合物因增加之機械特性亦能防止龜 i !裂。在多層積體電路之裝置中之組合物可由化學/機械方 | ; ' ;式予以平面化以利於增加之電路面光刻之成形。介電組合
第11頁
第12頁 五、發明說明（8) 雖然對於此一發明所具之具體實施例己予說明，對其 詳述部分不應解釋為其限定，且在不背離屬於其範圍及精 神下明顯之變更，具體實施例，變化及修改等，應能了解 此種相似之具體實施例亦應屬包括於本發明之範圍内。
第13頁
Claims (1)
- 六、 2. 3. 4. 5. 6. 一 〜 申請專利範圍 一種非水性介電組合物，其包含矽户 點較1 5 0 °C為高之有機胺。 p +虱烷及具有沸 如申請專利範圍第i項之組合物， 20 0 °C為高之沸點。 /、Y .有機胺具有較 如申請專利範圍第2項之組合物， 胺。 /、甲有機胺為羥基 如申請專利範圍第3項之組合物，其 Cm烷基矽倍半氧烷或Ci—4烷基/笨 \半氧烷為 一種形成積體電路裝置之方法，其勺氣烷。 U)於基底上敌置石夕倍半氧烧之非^性層， 點較1 5 0 t為高之有機胺； 及具有沸 (b )對組合物加熱使矽倍半氧烷反應； (c )以石印方式使介電層構圖；' ’ (d) 沈積一金屬膜於已構圖之介 (e) 使膜平面化以形成積體電路。9 ，及 如申。請專利範圍第5項之方法，其 2 〇 〇 C為高之沸點。 機胺具有較 如申凊專利範圍第6項之方法 胺。 如申請專利範圍第7項之方法 貌：碎倍半氧烧或U基/笨基倍半广氣 一種形成積體電路之方法，其包括倍丰軋烷。 (a)將—金屬膜沈積於基底上； (b )以石印方式使金屬膜構圖； /、中有機胺為羥基 、中矽倍半氣烷為399^84 六、申請專利範圍 (C)在已構圖之金屬膜上沈積包含矽倍半氧烷及具有 沸點較1 5 0 °C為高之有機胺之介電組合物之非水 性層； (d ) 對組合物加熱使夺倍半氧烧反應。 10. 如申請專利範圍第9項之方法，其中有機胺具有較 2 0 0 C為南之〉弗點。 11. 如申請專利範圍第1 0項之方法，其中有機胺為羥基 胺。 12. 如申請專利範圍第1 1項之方法其中矽倍半氧烷為(V4 烷基矽倍半氧烷或Ch烷基/苯基矽倍半氧烷。第15頁
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| EP1092234A1 (en) * | 1998-06-05 | 2001-04-18 | Georgia Tech Research | Porous insulating compounds and method for making same |
| US6156671A (en) * | 1999-03-10 | 2000-12-05 | United Microelectronics Corp. | Method for improving characteristic of dielectric material |
| US6891237B1 (en) * | 2000-06-27 | 2005-05-10 | Lucent Technologies Inc. | Organic semiconductor device having an active dielectric layer comprising silsesquioxanes |
| US6764958B1 (en) | 2000-07-28 | 2004-07-20 | Applied Materials Inc. | Method of depositing dielectric films |
| TWI226103B (en) * | 2000-08-31 | 2005-01-01 | Georgia Tech Res Inst | Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same |
| US6537733B2 (en) * | 2001-02-23 | 2003-03-25 | Applied Materials, Inc. | Method of depositing low dielectric constant silicon carbide layers |
| US6670285B2 (en) | 2001-03-14 | 2003-12-30 | International Business Machines Corporation | Nitrogen-containing polymers as porogens in the preparation of highly porous, low dielectric constant materials |
| US6685983B2 (en) | 2001-03-14 | 2004-02-03 | International Business Machines Corporation | Defect-free dielectric coatings and preparation thereof using polymeric nitrogenous porogens |
| GB0108274D0 (en) * | 2001-04-03 | 2001-05-23 | Dow Corning | preparation of silicone resins |
| US6656837B2 (en) * | 2001-10-11 | 2003-12-02 | Applied Materials, Inc. | Method of eliminating photoresist poisoning in damascene applications |
| JP5348843B2 (ja) * | 2003-10-07 | 2013-11-20 | ハネウエル・インターナシヨナル・インコーポレーテツド | 集積回路用途の被覆およびハードマスク組成物、これらの製造方法および使用 |
| US7378456B2 (en) * | 2004-01-30 | 2008-05-27 | Promerus Llc | Directly photodefinable polymer compositions and methods thereof |
| US20050192409A1 (en) * | 2004-02-13 | 2005-09-01 | Rhodes Larry F. | Polymers of polycyclic olefins having a polyhedral oligosilsesquioxane pendant group and uses thereof |
| EP1574491B1 (en) * | 2004-03-11 | 2009-05-13 | Corning Incorporated | Ceramic composition with silsesquioxane polymer |
| US8901268B2 (en) | 2004-08-03 | 2014-12-02 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
| US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
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| US5767014A (en) * | 1996-10-28 | 1998-06-16 | International Business Machines Corporation | Integrated circuit and process for its manufacture |
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