TW376576B - Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum - Google Patents

Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum

Info

Publication number
TW376576B
TW376576B TW087105385A TW87105385A TW376576B TW 376576 B TW376576 B TW 376576B TW 087105385 A TW087105385 A TW 087105385A TW 87105385 A TW87105385 A TW 87105385A TW 376576 B TW376576 B TW 376576B
Authority
TW
Taiwan
Prior art keywords
titanium
nitrogen
silicon
aluminum
substrate
Prior art date
Application number
TW087105385A
Other languages
English (en)
Inventor
Liang-Yuh Chen
Ted Guo
Roderick Craig Mosely
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW376576B publication Critical patent/TW376576B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/586—Nitriding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW087105385A 1997-04-11 1998-04-09 Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum TW376576B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/840,209 US6080665A (en) 1997-04-11 1997-04-11 Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum

Publications (1)

Publication Number Publication Date
TW376576B true TW376576B (en) 1999-12-11

Family

ID=25281734

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087105385A TW376576B (en) 1997-04-11 1998-04-09 Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum

Country Status (5)

Country Link
US (1) US6080665A (zh)
EP (1) EP0871217A3 (zh)
JP (1) JPH1145864A (zh)
KR (1) KR19980081269A (zh)
TW (1) TW376576B (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6077781A (en) * 1995-11-21 2000-06-20 Applied Materials, Inc. Single step process for blanket-selective CVD aluminum deposition
KR100269878B1 (ko) * 1997-08-22 2000-12-01 윤종용 반도체소자의금속배선형성방법
US6140228A (en) * 1997-11-13 2000-10-31 Cypress Semiconductor Corporation Low temperature metallization process
JP3568385B2 (ja) * 1998-03-16 2004-09-22 沖電気工業株式会社 半導体装置の製造方法
US6427904B1 (en) * 1999-01-29 2002-08-06 Clad Metals Llc Bonding of dissimilar metals
US6383915B1 (en) * 1999-02-03 2002-05-07 Applied Materials, Inc. Tailoring of a wetting/barrier layer to reduce electromigration in an aluminum interconnect
US6316353B1 (en) * 1999-02-18 2001-11-13 Micron Technology, Inc. Method of forming conductive connections
US6365507B1 (en) * 1999-03-01 2002-04-02 Micron Technology, Inc. Method of forming integrated circuitry
US6524951B2 (en) * 1999-03-01 2003-02-25 Micron Technology, Inc. Method of forming a silicide interconnect over a silicon comprising substrate and method of forming a stack of refractory metal nitride over refractory metal silicide over silicon
KR100355861B1 (ko) * 1999-05-11 2002-10-12 아남반도체 주식회사 반도체 소자의 제조 방법
US6355558B1 (en) * 1999-06-10 2002-03-12 Texas Instruments Incorporated Metallization structure, and associated method, to improve crystallographic texture and cavity fill for CVD aluminum/PVD aluminum alloy films
US6214714B1 (en) * 1999-06-25 2001-04-10 Applied Materials, Inc. Method of titanium/titanium nitride integration
US6969448B1 (en) 1999-12-30 2005-11-29 Cypress Semiconductor Corp. Method for forming a metallization structure in an integrated circuit
US6561627B2 (en) * 2000-11-30 2003-05-13 Eastman Kodak Company Thermal actuator
US6688584B2 (en) * 2001-05-16 2004-02-10 Micron Technology, Inc. Compound structure for reduced contact resistance
US6709958B2 (en) 2001-08-30 2004-03-23 Micron Technology, Inc. Integrated circuit device and fabrication using metal-doped chalcogenide materials
US20040203230A1 (en) * 2002-01-31 2004-10-14 Tetsuo Usami Semiconductor device having multilayered conductive layers
US6777328B2 (en) * 2002-01-31 2004-08-17 Oki Electric Industry Co., Ltd. Method of forming multilayered conductive layers for semiconductor device
KR100455382B1 (ko) * 2002-03-12 2004-11-06 삼성전자주식회사 듀얼 다마신 구조를 가지는 반도체 소자의 금속 배선 형성방법
WO2004076705A2 (en) * 2003-02-24 2004-09-10 University Of South Florida Reactive physical vapor deposition with sequential reactive gas injection
US20050221612A1 (en) * 2004-04-05 2005-10-06 International Business Machines Corporation A low thermal budget (mol) liner, a semiconductor device comprising said liner and method of forming said semiconductor device
US7550055B2 (en) * 2005-05-31 2009-06-23 Applied Materials, Inc. Elastomer bonding of large area sputtering target
KR100730478B1 (ko) * 2006-05-24 2007-06-19 동부일렉트로닉스 주식회사 반도체 소자 제조방법
US8003536B2 (en) * 2009-03-18 2011-08-23 International Business Machines Corporation Electromigration resistant aluminum-based metal interconnect structure
JP6832785B2 (ja) * 2016-08-08 2021-02-24 東京エレクトロン株式会社 シリコン窒化膜の成膜方法および成膜装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4762728A (en) * 1985-04-09 1988-08-09 Fairchild Semiconductor Corporation Low temperature plasma nitridation process and applications of nitride films formed thereby
US4715937A (en) * 1986-05-05 1987-12-29 The Board Of Trustees Of The Leland Stanford Junior University Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge
US4782380A (en) * 1987-01-22 1988-11-01 Advanced Micro Devices, Inc. Multilayer interconnection for integrated circuit structure having two or more conductive metal layers
US4786360A (en) * 1987-03-30 1988-11-22 International Business Machines Corporation Anisotropic etch process for tungsten metallurgy
US5162262A (en) * 1989-03-14 1992-11-10 Mitsubishi Denki Kabushiki Kaisha Multi-layered interconnection structure for a semiconductor device and manufactured method thereof
US5658828A (en) * 1989-11-30 1997-08-19 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum contact through an insulating layer
US5478780A (en) * 1990-03-30 1995-12-26 Siemens Aktiengesellschaft Method and apparatus for producing conductive layers or structures for VLSI circuits
US5236868A (en) * 1990-04-20 1993-08-17 Applied Materials, Inc. Formation of titanium nitride on semiconductor wafer by reaction of titanium with nitrogen-bearing gas in an integrated processing system
FR2670605B1 (fr) * 1990-12-13 1993-04-09 France Etat Procede de realisation d'une barriere de diffusion electriquement conductrice a l'interface metal/silicium d'un transistor mos et transistor correspondant.
FR2672731A1 (fr) * 1991-02-07 1992-08-14 France Telecom Procede d'oxydation localisee enterree d'un substrat de silicium et circuit integre correspondant.
US5242860A (en) * 1991-07-24 1993-09-07 Applied Materials, Inc. Method for the formation of tin barrier layer with preferential (111) crystallographic orientation
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US5427666A (en) * 1993-09-09 1995-06-27 Applied Materials, Inc. Method for in-situ cleaning a Ti target in a Ti + TiN coating process
AU1745695A (en) * 1994-06-03 1996-01-04 Materials Research Corporation A method of nitridization of titanium thin films
JP3130207B2 (ja) * 1994-07-08 2001-01-31 松下電子工業株式会社 半導体装置の製造方法
JPH08186075A (ja) * 1994-12-29 1996-07-16 Nippon Steel Corp 半導体装置の製造方法及び半導体製造装置

Also Published As

Publication number Publication date
KR19980081269A (ko) 1998-11-25
EP0871217A3 (en) 1999-08-04
EP0871217A2 (en) 1998-10-14
JPH1145864A (ja) 1999-02-16
US6080665A (en) 2000-06-27

Similar Documents

Publication Publication Date Title
TW376576B (en) Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum
MY122412A (en) Heat treatment method for semiconductor substrates
TW429477B (en) Tungsten layer formation method for semiconductor device and semiconductor device using the same
KR950007032A (ko) 반도체장치의 절연층 형성방법 및 그 형성장치
MX9802017A (es) Substrato con un revestimiento fotocatalitico basado en dioxido de titanio y dispersiones organicas basadas en dioxido de titanio.
WO2001078115A3 (en) Barrier coating for vitreous materials
ZA964829B (en) Method of producing coating on reconstituted wood substrate.
WO1999010916A3 (en) Copper electroless deposition on a titanium-containing surface
KR900013588A (ko) 막 형성 방법
WO1997026388A3 (en) Laser induced surfaces
ATE374847T1 (de) Anlage zum behandeln von substraten
WO2000020900A3 (en) Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method
FR2756663B1 (fr) Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface
KR950000931A (ko) 증착 처리시 물체가 수용기에 고착하는 것을 제한하는 방법
TW344892B (en) Method of forming a semiconductor metallization system and structure therefor
WO2003021009A3 (en) Process for treating a conductive surface and products formed thereby
TW350133B (en) Method of formation of on-line in copper
TW430882B (en) Plasma film forming method
ATE196513T1 (de) Haftschicht für die abscheidung von wolfram
EP0607808A3 (en) Method of etching a semiconductor substrate.
MY129597A (en) Method for manufacturing a semiconductor wafer which is coated on one side and provided with a finish
TW366541B (en) Process for forming a semiconductor device
ES2140496T3 (es) Sustrato de metal duro con una capa de diamante de alta adherencia.
GB2364664A (en) Electroslag surfacing using wire electrodes
WO2001039257A3 (fr) Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche