ATE196513T1 - Haftschicht für die abscheidung von wolfram - Google Patents

Haftschicht für die abscheidung von wolfram

Info

Publication number
ATE196513T1
ATE196513T1 AT96109031T AT96109031T ATE196513T1 AT E196513 T1 ATE196513 T1 AT E196513T1 AT 96109031 T AT96109031 T AT 96109031T AT 96109031 T AT96109031 T AT 96109031T AT E196513 T1 ATE196513 T1 AT E196513T1
Authority
AT
Austria
Prior art keywords
titanium
tungsten
deposition
adhesive layer
plasma
Prior art date
Application number
AT96109031T
Other languages
English (en)
Inventor
Ivo Raaijmakers
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE196513T1 publication Critical patent/ATE196513T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)
AT96109031T 1995-06-07 1996-06-05 Haftschicht für die abscheidung von wolfram ATE196513T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/482,682 US5725740A (en) 1995-06-07 1995-06-07 Adhesion layer for tungsten deposition

Publications (1)

Publication Number Publication Date
ATE196513T1 true ATE196513T1 (de) 2000-10-15

Family

ID=23917012

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96109031T ATE196513T1 (de) 1995-06-07 1996-06-05 Haftschicht für die abscheidung von wolfram

Country Status (6)

Country Link
US (1) US5725740A (de)
EP (1) EP0747502B1 (de)
JP (1) JPH0917747A (de)
KR (1) KR970003543A (de)
AT (1) ATE196513T1 (de)
DE (1) DE69610365T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6221792B1 (en) * 1997-06-24 2001-04-24 Lam Research Corporation Metal and metal silicide nitridization in a high density, low pressure plasma reactor
JPH11168071A (ja) * 1997-12-03 1999-06-22 Sony Corp Ｔｉ／ＴｉＮ膜の連続形成方法
US6030509A (en) * 1998-04-06 2000-02-29 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for shielding a wafer holder
US6132575A (en) * 1998-09-28 2000-10-17 Alcatel Magnetron reactor for providing a high density, inductively coupled plasma source for sputtering metal and dielectric films
US6337289B1 (en) 1999-09-24 2002-01-08 Applied Materials. Inc Method and apparatus for integrating a metal nitride film in a semiconductor device
US6791197B1 (en) 2002-08-26 2004-09-14 Integrated Device Technology, Inc. Reducing layer separation and cracking in semiconductor devices
US20040214417A1 (en) * 2003-03-11 2004-10-28 Paul Rich Methods of forming tungsten or tungsten containing films
JP4923450B2 (ja) * 2005-07-01 2012-04-25 富士ゼロックス株式会社 バッチ処理支援装置および方法、プログラム
US20070012558A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Magnetron sputtering system for large-area substrates
US20070012559A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Method of improving magnetron sputtering of large-area substrates using a removable anode
US20070012663A1 (en) * 2005-07-13 2007-01-18 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070084720A1 (en) * 2005-07-13 2007-04-19 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070051616A1 (en) * 2005-09-07 2007-03-08 Le Hienminh H Multizone magnetron assembly
US7588668B2 (en) 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
US20070056850A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070056843A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US12531210B2 (en) 2018-04-20 2026-01-20 Lam Research Corporation Edge exclusion control
US11062900B2 (en) * 2018-12-04 2021-07-13 Applied Materials, Inc. Method of reducing effective oxide thickness in a semiconductor structure
TWI814888B (zh) 2019-08-15 2023-09-11 聯華電子股份有限公司 一種製作半導體元件的方法
CN115087758A (zh) * 2020-02-11 2022-09-20 朗姆研究公司 用于控制晶片晶边/边缘上的沉积的承载环设计

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121469A (en) * 1977-03-31 1978-10-23 Toshiba Corp Gas etching unit
JPS57152127A (en) * 1981-03-16 1982-09-20 Nippon Telegr & Teleph Corp <Ntt> Fabrication of electrode of semiconductor device
JPS61222534A (ja) * 1985-03-28 1986-10-03 Anelva Corp 表面処理方法および装置
GB8629634D0 (en) * 1986-12-11 1987-01-21 Dobson C D Reactive ion & sputter etching
JPS63162573A (ja) * 1986-12-26 1988-07-06 日本鋼管株式会社 窒化チタン膜の製造方法
US5202008A (en) * 1990-03-02 1993-04-13 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
JP3343620B2 (ja) * 1992-04-09 2002-11-11 アネルバ株式会社 マグネトロンスパッタリングによる薄膜形成方法および装置
US5427666A (en) * 1993-09-09 1995-06-27 Applied Materials, Inc. Method for in-situ cleaning a Ti target in a Ti + TiN coating process

Also Published As

Publication number Publication date
EP0747502A1 (de) 1996-12-11
EP0747502B1 (de) 2000-09-20
DE69610365D1 (de) 2000-10-26
US5725740A (en) 1998-03-10
JPH0917747A (ja) 1997-01-17
KR970003543A (ko) 1997-01-28
DE69610365T2 (de) 2001-04-26

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