TW376546B - Method and system for charged particle beam exposure - Google Patents

Method and system for charged particle beam exposure

Info

Publication number
TW376546B
TW376546B TW087102992A TW87102992A TW376546B TW 376546 B TW376546 B TW 376546B TW 087102992 A TW087102992 A TW 087102992A TW 87102992 A TW87102992 A TW 87102992A TW 376546 B TW376546 B TW 376546B
Authority
TW
Taiwan
Prior art keywords
potential
output
delay circuit
drive circuit
variable delay
Prior art date
Application number
TW087102992A
Other languages
English (en)
Inventor
Soichiro Arai
Kenichi Miyazawa
Hidefumi Yabara
Hiroshi Yasuda
Takayuki Nakatani
Original Assignee
Fujitsu Ltd
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Advantest Corp filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of TW376546B publication Critical patent/TW376546B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
TW087102992A 1997-04-11 1998-03-02 Method and system for charged particle beam exposure TW376546B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9094199A JPH10289843A (ja) 1997-04-11 1997-04-11 荷電粒子ビーム露光方法及び装置

Publications (1)

Publication Number Publication Date
TW376546B true TW376546B (en) 1999-12-11

Family

ID=14103636

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087102992A TW376546B (en) 1997-04-11 1998-03-02 Method and system for charged particle beam exposure

Country Status (5)

Country Link
US (1) US5910658A (zh)
JP (1) JPH10289843A (zh)
KR (1) KR100273655B1 (zh)
DE (1) DE19814245C2 (zh)
TW (1) TW376546B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990062942A (ko) * 1997-12-10 1999-07-26 히로시 오우라 전하 입자 빔 노출 장치
JPH11219679A (ja) * 1998-02-02 1999-08-10 Advantest Corp 荷電粒子ビーム露光装置及び荷電粒子ビーム露光システム
JP4220209B2 (ja) * 2002-09-27 2009-02-04 株式会社アドバンテスト 電子ビーム露光装置、偏向装置、及び電子ビーム露光方法
US6803582B2 (en) * 2002-11-29 2004-10-12 Oregon Health & Science University One dimensional beam blanker array
DE10319154B4 (de) 2003-04-29 2012-12-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Maskenloses Lithographiesystem
EP2575159B1 (en) * 2011-09-30 2016-04-20 Carl Zeiss Microscopy GmbH Particle beam system and method for operating the same
TWI578364B (zh) * 2014-09-03 2017-04-11 Nuflare Technology Inc Inspection method of masking device with multiple charged particle beam
JP2017063101A (ja) * 2015-09-24 2017-03-30 株式会社アドバンテスト 露光装置および露光方法
JP6587994B2 (ja) * 2016-09-09 2019-10-09 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイ装置、荷電粒子ビーム描画装置、および電極テスト方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5369282A (en) * 1992-08-03 1994-11-29 Fujitsu Limited Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput
US5528048A (en) * 1994-03-15 1996-06-18 Fujitsu Limited Charged particle beam exposure system and method

Also Published As

Publication number Publication date
DE19814245C2 (de) 2002-09-12
US5910658A (en) 1999-06-08
KR100273655B1 (ko) 2001-01-15
DE19814245A1 (de) 1998-10-22
JPH10289843A (ja) 1998-10-27
KR19980080136A (ko) 1998-11-25

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