TW374174B - Semiconductor memory device with flexible redundancy - Google Patents

Semiconductor memory device with flexible redundancy

Info

Publication number
TW374174B
TW374174B TW085113675A TW85113675A TW374174B TW 374174 B TW374174 B TW 374174B TW 085113675 A TW085113675 A TW 085113675A TW 85113675 A TW85113675 A TW 85113675A TW 374174 B TW374174 B TW 374174B
Authority
TW
Taiwan
Prior art keywords
redundancy
sensing
ordinary
line
data
Prior art date
Application number
TW085113675A
Other languages
English (en)
Inventor
Kyu-Chan Lee
Keum-Yong Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW374174B publication Critical patent/TW374174B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage

Landscapes

  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW085113675A 1995-11-22 1996-11-08 Semiconductor memory device with flexible redundancy TW374174B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950042985A KR0172393B1 (ko) 1995-11-22 1995-11-22 탄력적인 컬럼구제 기능을 가지는 반도체 메모리 장치

Publications (1)

Publication Number Publication Date
TW374174B true TW374174B (en) 1999-11-11

Family

ID=19435239

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085113675A TW374174B (en) 1995-11-22 1996-11-08 Semiconductor memory device with flexible redundancy

Country Status (4)

Country Link
US (1) US5761138A (zh)
JP (1) JP3691608B2 (zh)
KR (1) KR0172393B1 (zh)
TW (1) TW374174B (zh)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3512957B2 (ja) * 1996-10-09 2004-03-31 株式会社東芝 半導体記憶装置
KR100441871B1 (ko) * 1996-11-13 2004-10-08 주식회사 하이닉스반도체 컬럼리페어장치
JPH10241398A (ja) * 1997-02-28 1998-09-11 Nec Corp 半導体メモリ装置
US5910921A (en) * 1997-04-22 1999-06-08 Micron Technology, Inc. Self-test of a memory device
WO1999017237A1 (de) * 1997-09-26 1999-04-08 Siemens Aktiengesellschaft Verfahren zur herstellung von layouts von integrierten speichern
CA2223222C (en) * 1997-11-28 2006-05-02 Mosaid Technologies Incorporated Data-bit redundancy for semiconductor memories
US6125051A (en) * 1997-12-12 2000-09-26 Hyundai Electronics Industries Co., Ltd. Circuit for driving nonvolatile ferroelectric memory
US6091624A (en) * 1997-12-12 2000-07-18 Lg Semicon Co., Ltd. SWL ferroelectric memory and circuit for driving the same
US6144591A (en) * 1997-12-30 2000-11-07 Mosaid Technologies Incorporated Redundancy selection circuit for semiconductor memories
KR19990061991A (ko) * 1997-12-31 1999-07-26 김영환 다수개의 리던던시 입출력 라인들을 구비하는 반도체 장치
JP2000067595A (ja) 1998-06-09 2000-03-03 Mitsubishi Electric Corp 半導体記憶装置
US6072735A (en) * 1998-06-22 2000-06-06 Lucent Technologies, Inc. Built-in redundancy architecture for computer memories
JP2000011681A (ja) * 1998-06-22 2000-01-14 Mitsubishi Electric Corp 同期型半導体記憶装置
KR100301042B1 (ko) 1998-07-15 2001-09-06 윤종용 레이아웃면적을최소화하는리던던시회로
KR100416318B1 (ko) 1998-12-22 2004-01-31 인피니언 테크놀로지스 아게 리던던트 메모리를 구비한 집적 메모리
TW451209B (en) 1998-12-22 2001-08-21 Infineon Technologies Ag Integrated memory with redundance
KR100304700B1 (ko) 1999-01-13 2001-09-26 윤종용 버퍼부를 내장하여 부하를 일정하게 하는 리던던시 회로
US6732229B1 (en) 1999-02-24 2004-05-04 Monolithic System Technology, Inc. Method and apparatus for memory redundancy with no critical delay-path
JP3307360B2 (ja) * 1999-03-10 2002-07-24 日本電気株式会社 半導体集積回路装置
DE19917589C1 (de) * 1999-04-19 2000-11-02 Siemens Ag Halbleiterspeicher vom wahlfreien Zugriffstyp
KR100341576B1 (ko) 1999-06-28 2002-06-22 박종섭 반도체메모리장치의 파이프데이터 입력 제어 방법 및 장치
KR100374633B1 (ko) * 2000-08-14 2003-03-04 삼성전자주식회사 리던던시 효율을 향상시키는 칼럼 리던던시 구조를 갖는반도체 메모리 장치
KR100385957B1 (ko) * 2001-02-14 2003-06-02 삼성전자주식회사 효율적인 칼럼 리던던시 스킴을 갖는 반도체 메모리장치
US7131039B2 (en) * 2002-12-11 2006-10-31 Hewlett-Packard Development Company, L.P. Repair techniques for memory with multiple redundancy
JP2005092963A (ja) * 2003-09-16 2005-04-07 Renesas Technology Corp 不揮発性記憶装置
GB0414622D0 (en) * 2004-06-30 2004-08-04 Ibm Data integrity checking in data storage devices
JP4676723B2 (ja) * 2004-07-30 2011-04-27 富士通株式会社 キャッシュメモリ、プロセッサ、キャッシュメモリの製造方法、プロセッサの製造方法
US7385862B2 (en) * 2005-07-29 2008-06-10 Stmicroelectronics Pvt. Ltd. Shared redundant memory architecture and memory system incorporating same
US8813021B1 (en) 2006-02-16 2014-08-19 Cypress Semiconductor Corporation Global resource conflict management for an embedded application design
US20080291760A1 (en) * 2007-05-23 2008-11-27 Micron Technology, Inc. Sub-array architecture memory devices and related systems and methods
US20240029781A1 (en) * 2022-07-19 2024-01-25 Micron Technology, Inc. Apparatuses and methods for repairing mutliple bit lines with a same column select value

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4807191A (en) * 1988-01-04 1989-02-21 Motorola, Inc. Redundancy for a block-architecture memory
KR910003594B1 (ko) * 1988-05-13 1991-06-07 삼성전자 주식회사 스페어컬럼(column)선택방법 및 회로

Also Published As

Publication number Publication date
JPH09180493A (ja) 1997-07-11
KR970029886A (ko) 1997-06-26
KR0172393B1 (ko) 1999-03-30
JP3691608B2 (ja) 2005-09-07
US5761138A (en) 1998-06-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees