TW373251B - Arrangement for processing a substrate wafer and operating method thereof - Google Patents

Arrangement for processing a substrate wafer and operating method thereof

Info

Publication number
TW373251B
TW373251B TW087102967A TW87102967A TW373251B TW 373251 B TW373251 B TW 373251B TW 087102967 A TW087102967 A TW 087102967A TW 87102967 A TW87102967 A TW 87102967A TW 373251 B TW373251 B TW 373251B
Authority
TW
Taiwan
Prior art keywords
substrate wafer
arrangement
processing
operating method
susceptor
Prior art date
Application number
TW087102967A
Other languages
English (en)
Inventor
Alfred Kersch
Thomas Schafbauer
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW373251B publication Critical patent/TW373251B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • G01K7/04Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples the object to be measured not forming one of the thermoelectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
TW087102967A 1997-03-20 1998-03-02 Arrangement for processing a substrate wafer and operating method thereof TW373251B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19711702A DE19711702C1 (de) 1997-03-20 1997-03-20 Anordnung zur Bearbeitung einer Substratscheibe und Verfahren zu deren Betrieb

Publications (1)

Publication Number Publication Date
TW373251B true TW373251B (en) 1999-11-01

Family

ID=7824059

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087102967A TW373251B (en) 1997-03-20 1998-03-02 Arrangement for processing a substrate wafer and operating method thereof

Country Status (6)

Country Link
US (1) US5998767A (zh)
EP (1) EP0874388B1 (zh)
JP (1) JP3878321B2 (zh)
KR (1) KR100402299B1 (zh)
DE (2) DE19711702C1 (zh)
TW (1) TW373251B (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010071235A (ko) * 1998-05-11 2001-07-28 세미툴 인코포레이티드 열반응기용 온도 제어 시스템
US6169271B1 (en) * 1998-07-13 2001-01-02 Mattson Technology, Inc. Model based method for wafer temperature control in a thermal processing system for semiconductor manufacturing
DE19922919C2 (de) * 1999-05-19 2002-01-17 Infineon Technologies Ag Anlage zur Bearbeitung von Wafern
DE19936081A1 (de) * 1999-07-30 2001-02-08 Siemens Ag Vorrichtung und Verfahren zum Temperieren eines Mehrschichtkörpers, sowie ein unter Anwendung des Verfahrens hergestellter Mehrschichtkörper
US6403931B1 (en) * 1999-10-07 2002-06-11 Ventana Medical Systems, Inc. Slide heater calibrator and temperature converter apparatus and method
ES2352314T3 (es) 1999-10-20 2011-02-17 Saint-Gobain Glass France S.A. Dispositivo y procedimiento para atemperar al menos un producto de procesamiento.
US20030016727A1 (en) * 2001-06-29 2003-01-23 Tokyo Electron Limited Method of and apparatus for measuring and controlling substrate holder temperature using ultrasonic tomography
US6510888B1 (en) 2001-08-01 2003-01-28 Applied Materials, Inc. Substrate support and method of fabricating the same
US7921802B2 (en) * 2002-12-09 2011-04-12 Nxp B.V. System and method for suppression of wafer temperature drift in cold-wall CVD systems
JP2005285963A (ja) * 2004-03-29 2005-10-13 Sumco Corp Soi基板の製造方法
US7802917B2 (en) * 2005-08-05 2010-09-28 Lam Research Corporation Method and apparatus for chuck thermal calibration
US8034410B2 (en) * 2007-07-17 2011-10-11 Asm International N.V. Protective inserts to line holes in parts for semiconductor process equipment
US9758871B2 (en) * 2008-12-10 2017-09-12 Sumco Techxiv Corporation Method and apparatus for manufacturing epitaxial silicon wafer
JP5824886B2 (ja) * 2011-06-07 2015-12-02 株式会社ニコン 基板貼り合わせ方法および温度検出装置
US10998205B2 (en) * 2018-09-14 2021-05-04 Kokusai Electric Corporation Substrate processing apparatus and manufacturing method of semiconductor device
CN110828365A (zh) * 2019-11-19 2020-02-21 全球能源互联网研究院有限公司 退火组件及退火方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4243441A (en) * 1979-05-09 1981-01-06 National Steel Corporation Method for metal strip temperature control
JPS57183041A (en) * 1981-05-06 1982-11-11 Nec Corp Annealing method for chemical semiconductor
US4711989A (en) * 1986-05-19 1987-12-08 Thermco Systems, Inc. Diffusion furnace multizone temperature control
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
JPH0623935B2 (ja) * 1988-02-09 1994-03-30 大日本スクリーン製造株式会社 再現性を高めた熱処理制御方法
JPH01297795A (ja) * 1988-05-26 1989-11-30 Matsushita Electric Works Ltd 差動式熱感知器
US5059770A (en) * 1989-09-19 1991-10-22 Watkins-Johnson Company Multi-zone planar heater assembly and method of operation
US5106200A (en) * 1990-12-20 1992-04-21 Applied Materials, Inc. Apparatus for measuring temperature of wafer
US5356486A (en) * 1991-03-04 1994-10-18 Applied Materials, Inc. Combined wafer support and temperature monitoring device
JP2824003B2 (ja) * 1993-02-16 1998-11-11 大日本スクリーン製造株式会社 基板の温度測定装置
US5624590A (en) * 1993-04-02 1997-04-29 Lucent Technologies, Inc. Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for practicing this technique
KR100280772B1 (ko) * 1994-08-31 2001-02-01 히가시 데쓰로 처리장치
US5716133A (en) * 1995-01-17 1998-02-10 Applied Komatsu Technology, Inc. Shielded heat sensor for measuring temperature
US5685906A (en) * 1995-03-23 1997-11-11 Seh America, Inc. Method and apparatus for configuring an epitaxial reactor for reduced set-up time and improved layer quality
US5551985A (en) * 1995-08-18 1996-09-03 Torrex Equipment Corporation Method and apparatus for cold wall chemical vapor deposition
US5831249A (en) * 1997-01-29 1998-11-03 Advanced Micro Devices, Inc. Secondary measurement of rapid thermal annealer temperature

Also Published As

Publication number Publication date
DE59813748D1 (de) 2006-11-16
JP3878321B2 (ja) 2007-02-07
KR19980080382A (ko) 1998-11-25
KR100402299B1 (ko) 2003-11-14
JPH10270373A (ja) 1998-10-09
EP0874388A2 (de) 1998-10-28
EP0874388B1 (de) 2006-10-04
EP0874388A3 (de) 2001-06-20
DE19711702C1 (de) 1998-06-25
US5998767A (en) 1999-12-07

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