TW368747B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TW368747B
TW368747B TW086106943A TW86106943A TW368747B TW 368747 B TW368747 B TW 368747B TW 086106943 A TW086106943 A TW 086106943A TW 86106943 A TW86106943 A TW 86106943A TW 368747 B TW368747 B TW 368747B
Authority
TW
Taiwan
Prior art keywords
circuit
voltage
drop
semiconductor device
active
Prior art date
Application number
TW086106943A
Other languages
English (en)
Inventor
Kenichi Yasuda
Jun Setogawa
Tsukasa Ooishi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW368747B publication Critical patent/TW368747B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
TW086106943A 1996-12-26 1997-05-23 Semiconductor device TW368747B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8347664A JPH10189877A (ja) 1996-12-26 1996-12-26 半導体装置

Publications (1)

Publication Number Publication Date
TW368747B true TW368747B (en) 1999-09-01

Family

ID=18391756

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086106943A TW368747B (en) 1996-12-26 1997-05-23 Semiconductor device

Country Status (5)

Country Link
US (1) US5862096A (zh)
JP (1) JPH10189877A (zh)
KR (1) KR100276399B1 (zh)
CN (2) CN1267994C (zh)
TW (1) TW368747B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI567903B (zh) * 2014-03-13 2017-01-21 東芝股份有限公司 半導體裝置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3199987B2 (ja) 1995-08-31 2001-08-20 株式会社東芝 半導体集積回路装置およびその動作検証方法
JP3421530B2 (ja) * 1997-04-11 2003-06-30 東芝マイクロエレクトロニクス株式会社 半導体記憶装置
JPH11203862A (ja) * 1998-01-13 1999-07-30 Mitsubishi Electric Corp 半導体記憶装置
KR20000032290A (ko) * 1998-11-13 2000-06-15 윤종용 멀티-뱅크 구조를 가지는 반도체 메모리 장치
JP4963144B2 (ja) * 2000-06-22 2012-06-27 ルネサスエレクトロニクス株式会社 半導体集積回路
US6661279B2 (en) 2001-04-11 2003-12-09 Kabushiki Kaisha Toshiba Semiconductor integrated circuit which outputs first internal power supply voltage and second internal power supply voltage lower than first internal supply power voltage
JP4790158B2 (ja) * 2001-06-11 2011-10-12 ルネサスエレクトロニクス株式会社 半導体装置
KR100399437B1 (ko) 2001-06-29 2003-09-29 주식회사 하이닉스반도체 내부 전원전압 발생장치
JP2003100075A (ja) * 2001-09-25 2003-04-04 Mitsubishi Electric Corp 半導体記憶装置
US6677804B2 (en) * 2002-02-11 2004-01-13 Micron Technology, Inc. Dual bandgap voltage reference system and method for reducing current consumption during a standby mode of operation and for providing reference stability during an active mode of operation
JP2003264256A (ja) * 2002-03-08 2003-09-19 Hitachi Ltd 半導体装置
EP1398793B1 (fr) * 2002-09-06 2014-05-21 CSEM Centre Suisse d'Electronique et de Microtechnique S.A. - Recherche et Développement Circuit intégré numérique réalisé en technologie MOS
JP2004133800A (ja) * 2002-10-11 2004-04-30 Renesas Technology Corp 半導体集積回路装置
JP4070654B2 (ja) * 2003-04-04 2008-04-02 ローム株式会社 半導体集積回路装置
KR100558475B1 (ko) * 2003-04-16 2006-03-07 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 배치 방법
US7227804B1 (en) * 2004-04-19 2007-06-05 Cypress Semiconductor Corporation Current source architecture for memory device standby current reduction
JP4703133B2 (ja) * 2004-05-25 2011-06-15 ルネサスエレクトロニクス株式会社 内部電圧発生回路および半導体集積回路装置
JP4488800B2 (ja) * 2004-06-14 2010-06-23 株式会社ルネサステクノロジ 半導体集積回路装置
KR100729356B1 (ko) 2005-08-23 2007-06-15 삼성전자주식회사 플래시 메모리 장치의 레이아웃 구조
KR100735010B1 (ko) * 2005-09-08 2007-07-03 삼성전자주식회사 플래시 메모리 장치 및 그것을 위한 전압 발생회로
KR100715147B1 (ko) 2005-10-06 2007-05-10 삼성전자주식회사 전류소모를 감소시키는 내부전원전압 발생회로를 가지는멀티칩 반도체 메모리 장치
KR100802073B1 (ko) * 2006-05-31 2008-02-12 주식회사 하이닉스반도체 반도체메모리소자의 내부전압 공급장치
JP2008159128A (ja) * 2006-12-22 2008-07-10 Elpida Memory Inc 半導体記憶装置
JP2008159145A (ja) * 2006-12-22 2008-07-10 Elpida Memory Inc 半導体記憶装置
CN101950520B (zh) * 2010-08-25 2012-12-26 友达光电股份有限公司 电平移位器、时钟输出信号的产生方法及其平面显示装置
TWI405407B (zh) * 2010-12-06 2013-08-11 Novatek Microelectronics Corp 電流驅動器、電子裝置及電流驅動方法
US8811075B2 (en) * 2012-01-06 2014-08-19 Sandisk Technologies Inc. Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: verify to program transition
KR102113717B1 (ko) * 2013-12-30 2020-05-21 에스케이하이닉스 주식회사 반도체 장치
CN107633866A (zh) * 2017-10-20 2018-01-26 上海华力微电子有限公司 一种半导体器件的电编程熔丝结构
US10910358B2 (en) * 2019-01-30 2021-02-02 Micron Technology, Inc. Integrated assemblies having capacitive units, and having resistive structures coupled with the capacitive units

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4028415A1 (de) * 1990-09-07 1992-03-12 Jacobs Suchard Ag Verfahren zur verbesserung von kaffee-sekundaerextrakten bei der herstellung von loeslichem kaffee
JP3057100B2 (ja) * 1991-02-12 2000-06-26 株式会社日立製作所 半導体集積回路装置
JP3085782B2 (ja) * 1992-05-29 2000-09-11 株式会社東芝 半導体記憶装置
US5325336A (en) * 1992-09-10 1994-06-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having power line arranged in a meshed shape
JP3705842B2 (ja) * 1994-08-04 2005-10-12 株式会社ルネサステクノロジ 半導体装置
JP3583482B2 (ja) * 1994-10-04 2004-11-04 株式会社ルネサステクノロジ 半導体集積回路装置
JP3574506B2 (ja) * 1995-06-13 2004-10-06 松下電器産業株式会社 半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI567903B (zh) * 2014-03-13 2017-01-21 東芝股份有限公司 半導體裝置

Also Published As

Publication number Publication date
KR19980063362A (ko) 1998-10-07
JPH10189877A (ja) 1998-07-21
KR100276399B1 (ko) 2000-12-15
CN1186344A (zh) 1998-07-01
CN1492507A (zh) 2004-04-28
US5862096A (en) 1999-01-19
CN1104052C (zh) 2003-03-26
CN1267994C (zh) 2006-08-02

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