TW340221B - Internal source voltage generating circuit - Google Patents

Internal source voltage generating circuit

Info

Publication number
TW340221B
TW340221B TW086106021A TW86106021A TW340221B TW 340221 B TW340221 B TW 340221B TW 086106021 A TW086106021 A TW 086106021A TW 86106021 A TW86106021 A TW 86106021A TW 340221 B TW340221 B TW 340221B
Authority
TW
Taiwan
Prior art keywords
power voltage
change
internal
general operation
voltage
Prior art date
Application number
TW086106021A
Other languages
Chinese (zh)
Inventor
Cho Dons-Soo
Sang Jae Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW340221B publication Critical patent/TW340221B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

A sort of internal source voltage generating circuit, including: an internal source voltage generator for provision of an internal power supply voltage in relation to the increase of an external power voltage through an output; and a fixing cell in connection with the output for change of the internal power voltage to the first changed rate before the general operation and based on the increase of the external power voltage, for change of the internal power voltage to the second changed rate which is lower than the first changed rate during the general operation of the external power voltage, irrelevant to the change of the external power voltage, and after the general operation mode and during the general operation mode for change of the internal power voltage to the third changed rate and in a stree mode for change of the internal power voltage to the second changed mode, where the third chnged rate equals the first changed rate.
TW086106021A 1996-08-29 1997-05-06 Internal source voltage generating circuit TW340221B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960036480A KR100200926B1 (en) 1996-08-29 1996-08-29 Generation circuit of internal power voltage

Publications (1)

Publication Number Publication Date
TW340221B true TW340221B (en) 1998-09-11

Family

ID=19471462

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086106021A TW340221B (en) 1996-08-29 1997-05-06 Internal source voltage generating circuit

Country Status (6)

Country Link
US (1) US5946242A (en)
JP (1) JP3735698B2 (en)
KR (1) KR100200926B1 (en)
DE (1) DE19724277B4 (en)
GB (1) GB2316751B (en)
TW (1) TW340221B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5642073A (en) * 1993-12-06 1997-06-24 Micron Technology, Inc. System powered with inter-coupled charge pumps
KR100334864B1 (en) * 1998-06-30 2002-08-24 주식회사 하이닉스반도체 Internal voltage drop circuit
KR100549938B1 (en) * 1999-01-12 2006-02-07 삼성전자주식회사 Internal voltage converter of a semiconductor memory device
US6226205B1 (en) * 1999-02-22 2001-05-01 Stmicroelectronics, Inc. Reference voltage generator for an integrated circuit such as a dynamic random access memory (DRAM)
EP1099306A1 (en) 1999-05-14 2001-05-16 Koninklijke Philips Electronics N.V. A high-voltage level tolerant transistor circuit
US6185139B1 (en) * 2000-01-12 2001-02-06 Motorola, Inc. Circuit and method for enabling semiconductor device burn-in
KR20010081423A (en) * 2000-02-14 2001-08-29 윤종용 active internal power supply generator of a semiconductor memory device
JP2003022697A (en) * 2001-07-06 2003-01-24 Mitsubishi Electric Corp Semiconductor integrated circuit device
KR100799109B1 (en) * 2006-06-30 2008-01-29 주식회사 하이닉스반도체 Semiconductor device
US10396553B2 (en) * 2014-08-29 2019-08-27 Telefonaktiebolaget Lm Ericsson (Publ) System and method for control of multiple voltage regulators

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262999A (en) * 1988-06-17 1993-11-16 Hitachi, Ltd. Large scale integrated circuit for low voltage operation
US5063304A (en) * 1990-04-27 1991-11-05 Texas Instruments Incorporated Integrated circuit with improved on-chip power supply control
US5283762A (en) * 1990-05-09 1994-02-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device containing voltage converting circuit and operating method thereof
JP2642512B2 (en) * 1990-11-16 1997-08-20 シャープ株式会社 Semiconductor integrated circuit
JPH05109368A (en) * 1991-10-15 1993-04-30 Mitsubishi Electric Corp In-line type electron gun
JP2838344B2 (en) * 1992-10-28 1998-12-16 三菱電機株式会社 Semiconductor device
KR950014099B1 (en) * 1992-06-12 1995-11-21 가부시기가이샤 도시바 Semiconductor memory device
KR960005387Y1 (en) * 1992-09-24 1996-06-28 문정환 Burn-in test apparatus of semiconductor memory
JP3071600B2 (en) * 1993-02-26 2000-07-31 日本電気株式会社 Semiconductor storage device
JP3132637B2 (en) * 1995-06-29 2001-02-05 日本電気株式会社 Nonvolatile semiconductor memory device
DE19707422C1 (en) * 1997-02-25 1998-08-27 Telefunken Microelectron Switching circuit for generation of DC supply voltage, for sensor unit in motor vehicle

Also Published As

Publication number Publication date
GB2316751A (en) 1998-03-04
KR100200926B1 (en) 1999-06-15
JP3735698B2 (en) 2006-01-18
DE19724277A1 (en) 1998-03-12
GB2316751B (en) 1999-04-07
JPH1092199A (en) 1998-04-10
US5946242A (en) 1999-08-31
DE19724277B4 (en) 2008-01-10
GB9713579D0 (en) 1997-09-03
KR19980016788A (en) 1998-06-05

Similar Documents

Publication Publication Date Title
TW357360B (en) Internal power voltage generating circuit
CA2168520A1 (en) Inverter/charger circuit for uninterruptible power supplies
EA200001257A1 (en) ENERGY ACCUMULATION SYSTEM
DE60119371D1 (en) POWER SUPPLY
WO2007078403A3 (en) Efficient power system
EP1463188A3 (en) Circuit arrangement, accessory module and photovoltaic system
WO2002050618A3 (en) Microturbine/capacitor power distribution system
SE9801008D0 (en) X-Ray system
TW288117B (en) Semiconductor integrated circuit device
TW340221B (en) Internal source voltage generating circuit
CA2185333A1 (en) Method and apparatus for providing an ultra low power regulated negative charge pump
MY134537A (en) Capacitively coupled power supply
MY133437A (en) Portable multi-band communication device, and a method for determining a charge consumption thereof
TR200002566T2 (en) Random-imitation sequence generator with method
CA2350435A1 (en) Efficient battery transfer circuit
TW344161B (en) UPS system and its charge control method
TW333697B (en) The semiconductor device
MY115002A (en) Switched-mode power supply with synchronous preconverter
DE69831267D1 (en) CHARGING FOR UPS
TW342558B (en) Low power oscillator
TW345734B (en) Semiconductor integrated circuit
DE59901961D1 (en) POWER SUPPLY DEVICE AND CIRCUIT ARRANGEMENT WITH THIS POWER SUPPLY DEVICE
JPS57502039A (en)
MX9505223A (en) Voltage and current mode power regulator.
TW357350B (en) Semiconductor memory device

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent