TW365563B - Polishing agent for semiconductor and method for its production - Google Patents
Polishing agent for semiconductor and method for its productionInfo
- Publication number
- TW365563B TW365563B TW087105740A TW87105740A TW365563B TW 365563 B TW365563 B TW 365563B TW 087105740 A TW087105740 A TW 087105740A TW 87105740 A TW87105740 A TW 87105740A TW 365563 B TW365563 B TW 365563B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- polishing agent
- production
- average particle
- weight average
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000002245 particle Substances 0.000 abstract 2
- 229910000420 cerium oxide Inorganic materials 0.000 abstract 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1472—Non-aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11108497 | 1997-04-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW365563B true TW365563B (en) | 1999-08-01 |
Family
ID=14551987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087105740A TW365563B (en) | 1997-04-28 | 1998-04-15 | Polishing agent for semiconductor and method for its production |
Country Status (5)
Country | Link |
---|---|
US (1) | US6120571A (zh) |
EP (1) | EP0875547A3 (zh) |
KR (1) | KR19980081812A (zh) |
SG (1) | SG72802A1 (zh) |
TW (1) | TW365563B (zh) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1323124C (zh) * | 1996-09-30 | 2007-06-27 | 日立化成工业株式会社 | 氧化铈研磨剂以及基板的研磨方法 |
JPH11181403A (ja) * | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
JP2002517593A (ja) | 1998-06-10 | 2002-06-18 | ロデール ホールディングス インコーポレイテッド | 金属cmpにおける研磨用組成物および研磨方法 |
FR2782462B1 (fr) * | 1998-08-21 | 2000-09-29 | Atochem Elf Sa | Procede pour ameliorer l'adherence de particules metalliques sur un substrat carbone |
US6426295B1 (en) | 1999-02-16 | 2002-07-30 | Micron Technology, Inc. | Reduction of surface roughness during chemical mechanical planarization(CMP) |
US6409936B1 (en) | 1999-02-16 | 2002-06-25 | Micron Technology, Inc. | Composition and method of formation and use therefor in chemical-mechanical polishing |
US6428392B1 (en) * | 1999-03-23 | 2002-08-06 | Seimi Chemical Co., Ltd. | Abrasive |
WO2001000744A1 (fr) | 1999-06-28 | 2001-01-04 | Nissan Chemical Industries, Ltd. | Compose abrasif pour plateau en verre de disque dur |
JP4075247B2 (ja) * | 1999-09-30 | 2008-04-16 | Jsr株式会社 | 化学機械研磨用水系分散体 |
US6183652B1 (en) * | 1999-10-08 | 2001-02-06 | Lucent Technologies, Inc. | Method for removing microorganism contamination from a polishing slurry |
US6358850B1 (en) * | 1999-12-23 | 2002-03-19 | International Business Machines Corporation | Slurry-less chemical-mechanical polishing of oxide materials |
MY118582A (en) * | 2000-05-12 | 2004-12-31 | Kao Corp | Polishing composition |
JP2001326199A (ja) * | 2000-05-17 | 2001-11-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
AU2001246851A1 (en) * | 2000-10-02 | 2002-04-15 | Mitsui Mining And Smelting Co. Lt.D | Cerium based abrasive material and method for producing cerium based abrasive material |
KR100450522B1 (ko) * | 2000-12-18 | 2004-10-01 | 주식회사 소디프신소재 | 초미분 산화 세륨 연마제의 제조 방법, 이에 의해 제조된연마제 및 이를 사용하여 기판을 연마하는 방법 |
JP2002319556A (ja) * | 2001-04-19 | 2002-10-31 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US6596042B1 (en) | 2001-11-16 | 2003-07-22 | Ferro Corporation | Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process |
US20060032836A1 (en) * | 2001-11-16 | 2006-02-16 | Ferro Corporation | Methods of controlling the properties of abrasive particles for use in chemical-mechanical polishing slurries |
US7666239B2 (en) * | 2001-11-16 | 2010-02-23 | Ferro Corporation | Hydrothermal synthesis of cerium-titanium oxide for use in CMP |
WO2003044123A1 (en) * | 2001-11-16 | 2003-05-30 | Ferro Corporation | Particles for use in cmp slurries and method for producing them |
US20040198191A1 (en) * | 2001-11-16 | 2004-10-07 | Naoki Bessho | Cerium-based polish and cerium-based polish slurry |
JP3463999B1 (ja) | 2002-05-16 | 2003-11-05 | 三井金属鉱業株式会社 | セリウム系研摩材の製造方法 |
KR100560223B1 (ko) * | 2002-06-05 | 2006-03-10 | 삼성코닝 주식회사 | 고정도 연마용 금속 산화물 분말 및 이의 제조방법 |
ATE455367T1 (de) * | 2002-07-22 | 2010-01-15 | Seimi Chem Kk | Halbleiterschleif prozess zu seiner herstellung und polierverfahren |
US6866793B2 (en) * | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
TWI332981B (en) * | 2003-07-17 | 2010-11-11 | Showa Denko Kk | Method for producing cerium oxide abrasives and cerium oxide abrasives obtained by the method |
KR100714814B1 (ko) * | 2003-09-12 | 2007-05-04 | 히다치 가세고교 가부시끼가이샤 | 세륨염, 그 제조방법, 산화세륨 및 세륨계 연마제 |
KR100574162B1 (ko) * | 2004-07-14 | 2006-04-27 | 테크노세미켐 주식회사 | 세륨계 연마제의 제조방법 |
KR100630691B1 (ko) * | 2004-07-15 | 2006-10-02 | 삼성전자주식회사 | 산화세륨 연마 입자 및 그 제조 방법과 cmp용 슬러리조성물 및 그 제조 방법과 이들을 이용한 기판 연마 방법 |
KR100682233B1 (ko) * | 2004-07-29 | 2007-02-12 | 주식회사 엘지화학 | 산화세륨 분말 및 그 제조방법 |
JP5090920B2 (ja) * | 2005-10-14 | 2012-12-05 | エルジー・ケム・リミテッド | Cmpスラリー用酸化セリウム粉末の製造方法及びこれを用いたcmp用スラリー組成物の製造方法 |
KR100812052B1 (ko) | 2005-11-14 | 2008-03-10 | 주식회사 엘지화학 | 탄산세륨 분말, 산화세륨 분말, 그 제조방법, 및 이를포함하는 cmp 슬러리 |
FR2906800B1 (fr) * | 2006-10-09 | 2008-11-28 | Rhodia Recherches & Tech | Suspension liquide et poudre de particules d'oxyde de cerium, procedes de preparation de celles-ci et utilisation dans le polissage |
EP2260013B1 (en) | 2008-02-12 | 2018-12-19 | Saint-Gobain Ceramics & Plastics, Inc. | Ceria material and method of forming same |
JP2015143332A (ja) * | 2013-12-24 | 2015-08-06 | 旭硝子株式会社 | 研磨剤、研磨方法および半導体集積回路装置の製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3429080A (en) * | 1966-05-02 | 1969-02-25 | Tizon Chem Corp | Composition for polishing crystalline silicon and germanium and process |
FR2583034A1 (fr) * | 1985-06-10 | 1986-12-12 | Rhone Poulenc Spec Chim | Nouvel oxyde cerique, son procede de fabrication et ses applications |
FR2604443A1 (fr) * | 1986-09-26 | 1988-04-01 | Rhone Poulenc Chimie | Composition de polissage a base de cerium destinee au polissage des verres organiques |
FR2617154B1 (fr) * | 1987-06-29 | 1990-11-30 | Rhone Poulenc Chimie | Procede d'obtention d'oxyde cerique et oxyde cerique a nouvelles caracteristiques morphologiques |
US5445996A (en) * | 1992-05-26 | 1995-08-29 | Kabushiki Kaisha Toshiba | Method for planarizing a semiconductor device having a amorphous layer |
US5389352A (en) * | 1993-07-21 | 1995-02-14 | Rodel, Inc. | Oxide particles and method for producing them |
JP2600600B2 (ja) * | 1993-12-21 | 1997-04-16 | 日本電気株式会社 | 研磨剤とその製法及びそれを用いた半導体装置の製造方法 |
TW311905B (zh) * | 1994-07-11 | 1997-08-01 | Nissan Chemical Ind Ltd | |
JP2864451B2 (ja) * | 1994-11-07 | 1999-03-03 | 三井金属鉱業株式会社 | 研磨材及び研磨方法 |
KR960041316A (ko) * | 1995-05-22 | 1996-12-19 | 고사이 아키오 | 연마용 입상체, 이의 제조방법 및 이의 용도 |
JP3359479B2 (ja) * | 1995-11-07 | 2002-12-24 | 三井金属鉱業株式会社 | 研磨材、その製造方法及び研磨方法 |
KR100336598B1 (ko) * | 1996-02-07 | 2002-05-16 | 이사오 우치가사키 | 산화 세륨 연마제 제조용 산화 세륨 입자 |
CN1323124C (zh) * | 1996-09-30 | 2007-06-27 | 日立化成工业株式会社 | 氧化铈研磨剂以及基板的研磨方法 |
-
1998
- 1998-04-15 TW TW087105740A patent/TW365563B/zh not_active IP Right Cessation
- 1998-04-15 SG SG1998000751A patent/SG72802A1/en unknown
- 1998-04-16 US US09/061,059 patent/US6120571A/en not_active Expired - Lifetime
- 1998-04-28 EP EP98107739A patent/EP0875547A3/en not_active Withdrawn
- 1998-04-28 KR KR1019980015185A patent/KR19980081812A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US6120571A (en) | 2000-09-19 |
EP0875547A3 (en) | 1999-03-31 |
EP0875547A2 (en) | 1998-11-04 |
KR19980081812A (ko) | 1998-11-25 |
SG72802A1 (en) | 2000-05-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW365563B (en) | Polishing agent for semiconductor and method for its production | |
TW324676B (en) | Polishing agent, method for producing the same and method for polishing | |
TW328068B (en) | Cerium oxide ultrafine particles and method for preparing the same | |
TW353112B (en) | Polishing composition | |
NZ294421A (en) | Dentifrice composition containing a precipitated silica having a mean particle size of 8-14 microns | |
MY128556A (en) | Use of a wafer edge polishing composition | |
MY126717A (en) | Cmp composition containing silane modified abrasive particles. | |
EP0750232A3 (en) | Magnetic particles for magnetic toner and process for producing the same | |
MY112735A (en) | Chemical mechanical polishing slurry for metal layers | |
CA2124394A1 (en) | Method of making an abrasive compact | |
TW237473B (en) | Polishing material | |
MY127266A (en) | Aqueous dispersion, a process for the preparation and the use thereof | |
CA2124393A1 (en) | Method of making an abrasive compact | |
WO1999061244A8 (en) | Silicon oxide particles | |
EP0965343A3 (en) | Ziprasidone formulations | |
MX9708434A (es) | Composiciones dentifricas. | |
CA2263241A1 (en) | Cerium oxide abrasive and method of abrading substrates | |
AU3138597A (en) | Fluoride additive containing chemical mechanical polishing slurry and method for use of same | |
NZ514330A (en) | Zinc containing dentifrice compositions | |
MX9708433A (es) | Composiciones dentifricas. | |
MY128883A (en) | Catalyst based on cobalt and its use in the fischer-tropsch process | |
EP1369906A4 (en) | POLISHING PASTE AND METHOD OF POLISHING A SUBSTRATE | |
EP0782179A3 (en) | Method of manufacturing semiconductor mirror wafers | |
MY120865A (en) | Composition and method for planarizing surfaces | |
AU2225301A (en) | Alumina particles, method for producing the same, composition comprising the same, and alumina slurry for polishing |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |