TW362277B - Charge pump for a semiconductor substrate - Google Patents
Charge pump for a semiconductor substrateInfo
- Publication number
- TW362277B TW362277B TW086110688A TW86110688A TW362277B TW 362277 B TW362277 B TW 362277B TW 086110688 A TW086110688 A TW 086110688A TW 86110688 A TW86110688 A TW 86110688A TW 362277 B TW362277 B TW 362277B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- signals
- generates
- substrate
- low voltage
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title 1
- 238000005086 pumping Methods 0.000 abstract 2
- 230000003213 activating effect Effects 0.000 abstract 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Dc-Dc Converters (AREA)
- Static Random-Access Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2272496P | 1996-07-29 | 1996-07-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW362277B true TW362277B (en) | 1999-06-21 |
Family
ID=21811109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086110688A TW362277B (en) | 1996-07-29 | 1997-07-26 | Charge pump for a semiconductor substrate |
Country Status (2)
Country | Link |
---|---|
JP (2) | JP4259632B2 (zh) |
TW (1) | TW362277B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI486929B (zh) * | 2013-05-13 | 2015-06-01 | Sitronix Technology Corp | Can produce self-voltage or negative voltage switching circuit |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8897073B2 (en) * | 2012-09-14 | 2014-11-25 | Freescale Semiconductor, Inc. | NVM with charge pump and method therefor |
KR101362474B1 (ko) | 2013-03-04 | 2014-02-14 | 충북대학교 산학협력단 | Cmos 서브밴드갭 기준발생기 |
US9306553B2 (en) * | 2013-03-06 | 2016-04-05 | Qualcomm Incorporated | Voltage level shifter with a low-latency voltage boost circuit |
CN112952789B (zh) * | 2021-03-31 | 2024-06-18 | 上海华虹宏力半导体制造有限公司 | 高Latch up能力的失效安全IO电路 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2589405B2 (ja) * | 1990-09-20 | 1997-03-12 | 三菱電機株式会社 | 半導体集積回路 |
JPH05108175A (ja) * | 1991-08-06 | 1993-04-30 | Nec Ic Microcomput Syst Ltd | 基板電位発生回路 |
JPH06121525A (ja) * | 1992-10-07 | 1994-04-28 | Mitsubishi Electric Corp | 基板バイアス発生装置 |
US5347172A (en) * | 1992-10-22 | 1994-09-13 | United Memories, Inc. | Oscillatorless substrate bias generator |
JP3276476B2 (ja) * | 1993-08-20 | 2002-04-22 | 株式会社日立製作所 | 半導体集積回路装置 |
KR0123849B1 (ko) * | 1994-04-08 | 1997-11-25 | 문정환 | 반도체 디바이스의 내부 전압발생기 |
-
1997
- 1997-07-26 TW TW086110688A patent/TW362277B/zh not_active IP Right Cessation
- 1997-07-29 JP JP23640397A patent/JP4259632B2/ja not_active Expired - Fee Related
-
2008
- 2008-05-01 JP JP2008119724A patent/JP4842992B2/ja not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI486929B (zh) * | 2013-05-13 | 2015-06-01 | Sitronix Technology Corp | Can produce self-voltage or negative voltage switching circuit |
Also Published As
Publication number | Publication date |
---|---|
JP2008259420A (ja) | 2008-10-23 |
JPH114576A (ja) | 1999-01-06 |
JP4842992B2 (ja) | 2011-12-21 |
JP4259632B2 (ja) | 2009-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |