TW356564B - Apparatus for cleaning semiconductor material - Google Patents
Apparatus for cleaning semiconductor materialInfo
- Publication number
- TW356564B TW356564B TW086107131A TW86107131A TW356564B TW 356564 B TW356564 B TW 356564B TW 086107131 A TW086107131 A TW 086107131A TW 86107131 A TW86107131 A TW 86107131A TW 356564 B TW356564 B TW 356564B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor material
- aforementioned
- liquid agent
- use liquid
- treatment
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8299097A JPH10144650A (ja) | 1996-11-11 | 1996-11-11 | 半導体材料の洗浄装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW356564B true TW356564B (en) | 1999-04-21 |
Family
ID=17868123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086107131A TW356564B (en) | 1996-11-11 | 1997-05-27 | Apparatus for cleaning semiconductor material |
Country Status (6)
Country | Link |
---|---|
US (2) | US6145519A (zh) |
JP (1) | JPH10144650A (zh) |
KR (1) | KR100272729B1 (zh) |
CN (1) | CN1099128C (zh) |
DE (1) | DE19723918A1 (zh) |
TW (1) | TW356564B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI469832B (zh) * | 2008-12-17 | 2015-01-21 | Aqua Science Corp | 對象物清洗方法及對象物清洗系統 |
Families Citing this family (57)
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TW539918B (en) * | 1997-05-27 | 2003-07-01 | Tokyo Electron Ltd | Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process |
US6354311B1 (en) * | 1997-09-10 | 2002-03-12 | Dainippon Screen Mfg. Co., Ltd. | Substrate drying apparatus and substrate processing apparatus |
DE19744953A1 (de) * | 1997-10-10 | 1999-04-15 | Giesecke & Devrient Gmbh | Sicherheitselement und Verfahren zu seiner Herstellung |
JP3701126B2 (ja) | 1998-09-01 | 2005-09-28 | 株式会社荏原製作所 | 基板の洗浄方法及び研磨装置 |
US6173720B1 (en) * | 1998-12-02 | 2001-01-16 | International Business Machines Corporation | Process for treating a semiconductor substrate |
JP3448613B2 (ja) * | 1999-06-29 | 2003-09-22 | オメガセミコン電子株式会社 | 乾燥装置 |
DE10036867B4 (de) * | 1999-07-30 | 2006-04-13 | Tokyo Electron Ltd. | Substrat-Bearbeitungsverfahren und -vorrichtung |
US6306008B1 (en) * | 1999-08-31 | 2001-10-23 | Micron Technology, Inc. | Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization |
US6758938B1 (en) * | 1999-08-31 | 2004-07-06 | Micron Technology, Inc. | Delivery of dissolved ozone |
TW499504B (en) * | 1999-09-09 | 2002-08-21 | Yu-Tsai Liu | Single chamber processing apparatus having multi-chamber functions |
US6296716B1 (en) | 1999-10-01 | 2001-10-02 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
US6982006B1 (en) * | 1999-10-19 | 2006-01-03 | Boyers David G | Method and apparatus for treating a substrate with an ozone-solvent solution |
US6748960B1 (en) * | 1999-11-02 | 2004-06-15 | Tokyo Electron Limited | Apparatus for supercritical processing of multiple workpieces |
DE19960573C2 (de) * | 1999-12-15 | 2002-10-10 | Promos Technologies Inc | Verfahren zum Entfernen von festen Rückständen auf Oberflächen von Halbleiterscheiben |
US6286231B1 (en) * | 2000-01-12 | 2001-09-11 | Semitool, Inc. | Method and apparatus for high-pressure wafer processing and drying |
TW434668B (en) * | 2000-01-27 | 2001-05-16 | Ind Tech Res Inst | Wafer rinse apparatus and rinse method of the same |
DE10020103A1 (de) * | 2000-04-22 | 2001-10-31 | Contrade Mikrostruktur Technol | Verfahren und Vorrichtung zum nasschemischen Entfernen von Schichten und zur Reinigung von scheibenförmigen Einzelsubstraten |
DE10020185C2 (de) * | 2000-04-25 | 2002-08-08 | Steag Micro Tech Gmbh | Vorrichtung und Verfahren zum Behandeln von Halbleiterwafern |
US6487792B2 (en) * | 2000-05-08 | 2002-12-03 | Tokyo Electron Limited | Method and apparatus for agitation of workpiece in high pressure environment |
CN1284636C (zh) * | 2000-07-24 | 2006-11-15 | 圣戈本陶瓷及塑料股份有限公司 | 陶瓷制品的清洁方法 |
KR100375005B1 (ko) * | 2000-07-26 | 2003-03-06 | 한주테크놀로지 주식회사 | 웨이퍼 클리닝 설비 및 이의 클리닝 방법 |
DE10036691A1 (de) | 2000-07-27 | 2002-02-14 | Wacker Siltronic Halbleitermat | Verfahren zur chemischen Behandlung von Halbleiterscheiben |
US6503837B2 (en) * | 2001-03-29 | 2003-01-07 | Macronix International Co. Ltd. | Method of rinsing residual etching reactants/products on a semiconductor wafer |
US20020174882A1 (en) * | 2001-05-25 | 2002-11-28 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method |
US6858091B2 (en) * | 2001-07-13 | 2005-02-22 | Lam Research Corporation | Method for controlling galvanic corrosion effects on a single-wafer cleaning system |
US6427359B1 (en) * | 2001-07-16 | 2002-08-06 | Semitool, Inc. | Systems and methods for processing workpieces |
US20040025901A1 (en) * | 2001-07-16 | 2004-02-12 | Semitool, Inc. | Stationary wafer spin/spray processor |
US20030136429A1 (en) * | 2002-01-22 | 2003-07-24 | Semitool, Inc. | Vapor cleaning and liquid rinsing process vessel |
US7156927B2 (en) | 2002-04-03 | 2007-01-02 | Fsi International, Inc. | Transition flow treatment process and apparatus |
EP1408534B1 (en) * | 2002-10-11 | 2007-02-07 | S.O.I. Tec Silicon on Insulator Technologies S.A. | A method and a device for producing an adhesive surface of a substrate |
US6722642B1 (en) | 2002-11-06 | 2004-04-20 | Tokyo Electron Limited | High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism |
US7289734B2 (en) * | 2002-12-24 | 2007-10-30 | Tropic Networks Inc. | Method and system for multi-level power management in an optical network |
JP4064402B2 (ja) * | 2003-01-09 | 2008-03-19 | 大日本スクリーン製造株式会社 | 基板処理システムおよび基板処理装置 |
US7270137B2 (en) * | 2003-04-28 | 2007-09-18 | Tokyo Electron Limited | Apparatus and method of securing a workpiece during high-pressure processing |
KR100734669B1 (ko) * | 2003-08-08 | 2007-07-02 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 및 그 장치 |
DE102005015758A1 (de) * | 2004-12-08 | 2006-06-14 | Astec Halbleitertechnologie Gmbh | Verfahren und Vorrichtung zum Ätzen von in einer Ätzlösung aufgenommenen Substraten |
US7767145B2 (en) | 2005-03-28 | 2010-08-03 | Toyko Electron Limited | High pressure fourier transform infrared cell |
KR20070087702A (ko) * | 2005-04-04 | 2007-08-29 | 주식회사 하이닉스반도체 | 금속 오염 억제를 위한 반도체웨이퍼의 세정방법 |
US7789971B2 (en) | 2005-05-13 | 2010-09-07 | Tokyo Electron Limited | Treatment of substrate using functionalizing agent in supercritical carbon dioxide |
US8388762B2 (en) * | 2007-05-02 | 2013-03-05 | Lam Research Corporation | Substrate cleaning technique employing multi-phase solution |
US8454760B2 (en) * | 2009-06-01 | 2013-06-04 | Micron Technology, Inc. | Wafer cleaning with immersed stream or spray nozzle |
JP5747031B2 (ja) * | 2009-07-16 | 2015-07-08 | ラム・リサーチ・アーゲーLam Research Ag | 半導体ウエハを乾燥させるための方法 |
US8668777B2 (en) * | 2010-12-22 | 2014-03-11 | Lam Research Ag | Process for treating a semiconductor wafer |
CN102427020A (zh) * | 2011-07-01 | 2012-04-25 | 上海华力微电子有限公司 | 一种有效减少水痕缺陷的晶片清洗方法 |
KR101450965B1 (ko) * | 2011-09-29 | 2014-10-15 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리장치 및 기판처리방법 |
JP5911689B2 (ja) * | 2011-09-29 | 2016-04-27 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6010894B2 (ja) * | 2011-10-31 | 2016-10-19 | セントラル硝子株式会社 | 洗浄乾燥剤およびそれを用いた基板の洗浄乾燥方法 |
JP6049257B2 (ja) * | 2011-12-20 | 2016-12-21 | 小林 光 | ウェハの洗浄装置および洗浄方法 |
US20130260569A1 (en) * | 2012-03-30 | 2013-10-03 | Lam Research Ag | Apparatus and method for liquid treatment of wafer-shaped articles |
US20160017263A1 (en) * | 2013-03-14 | 2016-01-21 | Applied Materials, Inc. | Wet cleaning of a chamber component |
US9799505B2 (en) * | 2014-09-24 | 2017-10-24 | Infineon Technologies Ag | Method and a processing device for processing at least one carrier |
CN106206247A (zh) * | 2015-05-25 | 2016-12-07 | 宁波时代全芯科技有限公司 | 清洗半导体元件的方法 |
JP6698446B2 (ja) * | 2016-07-05 | 2020-05-27 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法および記憶媒体 |
CN109201360B (zh) * | 2018-11-09 | 2023-10-24 | 北京科技大学 | 一种双阶高压水射流自振喷嘴装置 |
KR20200078737A (ko) * | 2018-12-21 | 2020-07-02 | 삼성디스플레이 주식회사 | 마스크부재의 세정 장치 및 마스크부재의 세정 시스템 |
CN110660662B (zh) * | 2019-10-08 | 2021-02-02 | 江苏晟驰微电子有限公司 | 一种新型硅腐蚀工艺 |
CN113793819A (zh) * | 2021-09-16 | 2021-12-14 | 长江存储科技有限责任公司 | 化学槽及其温度控制方法 |
Family Cites Families (23)
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---|---|---|---|---|
US4300581A (en) * | 1980-03-06 | 1981-11-17 | Thompson Raymon F | Centrifugal wafer processor |
JPS57170537A (en) * | 1981-04-14 | 1982-10-20 | Toshiba Corp | Treating method and device for semiconductor wafer |
US4984597B1 (en) * | 1984-05-21 | 1999-10-26 | Cfmt Inc | Apparatus for rinsing and drying surfaces |
JPH0318332A (ja) * | 1989-06-15 | 1991-01-25 | Inax Corp | シャワーの初期冷水抜き具 |
JPH0362925A (ja) * | 1989-07-31 | 1991-03-19 | Matsushita Electric Ind Co Ltd | 水洗装置 |
US5069236A (en) * | 1990-03-07 | 1991-12-03 | Pathway Systems, Inc. | Method and apparatus for cleaning disks |
US5090432A (en) * | 1990-10-16 | 1992-02-25 | Verteq, Inc. | Single wafer megasonic semiconductor wafer processing system |
JP2529468B2 (ja) * | 1990-11-30 | 1996-08-28 | 大陽酸素株式会社 | 半導体ウエハの洗浄装置及び洗浄方法 |
JPH06196465A (ja) * | 1992-12-24 | 1994-07-15 | Kawasaki Steel Corp | 半導体ウエハの洗浄装置 |
JP3003016B2 (ja) * | 1992-12-25 | 2000-01-24 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
JP3347814B2 (ja) * | 1993-05-17 | 2002-11-20 | 大日本スクリーン製造株式会社 | 基板の洗浄・乾燥処理方法並びにその処理装置 |
JPH06333899A (ja) * | 1993-05-19 | 1994-12-02 | Matsushita Electric Ind Co Ltd | 薬液処理方法およびその処理装置 |
JPH06349803A (ja) * | 1993-06-04 | 1994-12-22 | Nec Corp | 半導体基板の洗浄装置 |
WO1995008406A1 (en) * | 1993-09-22 | 1995-03-30 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
DE4336704A1 (de) * | 1993-10-27 | 1995-05-04 | Wacker Chemitronic | Verfahren und Vorrichtung zur Behandlung von scheibenförmigen Werkstücken mit einer Flüssigkeit |
US5575079A (en) * | 1993-10-29 | 1996-11-19 | Tokyo Electron Limited | Substrate drying apparatus and substrate drying method |
JP3351082B2 (ja) * | 1994-01-14 | 2002-11-25 | ソニー株式会社 | 基板乾燥方法と、基板乾燥槽と、ウェーハ洗浄装置および半導体装置の製造方法 |
JP3237386B2 (ja) * | 1994-04-08 | 2001-12-10 | ソニー株式会社 | 洗浄・乾燥方法と洗浄装置 |
US5468302A (en) * | 1994-07-13 | 1995-11-21 | Thietje; Jerry | Semiconductor wafer cleaning system |
US5571337A (en) * | 1994-11-14 | 1996-11-05 | Yieldup International | Method for cleaning and drying a semiconductor wafer |
US5730162A (en) * | 1995-01-12 | 1998-03-24 | Tokyo Electron Limited | Apparatus and method for washing substrates |
KR100226548B1 (ko) * | 1996-12-24 | 1999-10-15 | 김영환 | 웨이퍼 습식 처리 장치 |
US5807439A (en) * | 1997-09-29 | 1998-09-15 | Siemens Aktiengesellschaft | Apparatus and method for improved washing and drying of semiconductor wafers |
-
1996
- 1996-11-11 JP JP8299097A patent/JPH10144650A/ja active Pending
-
1997
- 1997-05-15 US US08/857,364 patent/US6145519A/en not_active Expired - Fee Related
- 1997-05-27 TW TW086107131A patent/TW356564B/zh active
- 1997-06-06 DE DE19723918A patent/DE19723918A1/de not_active Ceased
- 1997-07-11 CN CN97114518A patent/CN1099128C/zh not_active Expired - Fee Related
- 1997-07-11 KR KR1019970032333A patent/KR100272729B1/ko not_active IP Right Cessation
-
2000
- 2000-09-21 US US09/666,552 patent/US6227212B1/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI469832B (zh) * | 2008-12-17 | 2015-01-21 | Aqua Science Corp | 對象物清洗方法及對象物清洗系統 |
Also Published As
Publication number | Publication date |
---|---|
US6145519A (en) | 2000-11-14 |
CN1182281A (zh) | 1998-05-20 |
CN1099128C (zh) | 2003-01-15 |
DE19723918A1 (de) | 1998-05-14 |
US6227212B1 (en) | 2001-05-08 |
KR19980041782A (ko) | 1998-08-17 |
JPH10144650A (ja) | 1998-05-29 |
KR100272729B1 (ko) | 2000-12-01 |
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