TW355807B - Thin-film electron emitter device having a multilayer top electrode from suppressing degradation of an insulating layer and application equipment using the same - Google Patents

Thin-film electron emitter device having a multilayer top electrode from suppressing degradation of an insulating layer and application equipment using the same

Info

Publication number
TW355807B
TW355807B TW086102992A TW86102992A TW355807B TW 355807 B TW355807 B TW 355807B TW 086102992 A TW086102992 A TW 086102992A TW 86102992 A TW86102992 A TW 86102992A TW 355807 B TW355807 B TW 355807B
Authority
TW
Taiwan
Prior art keywords
thin
layer
electron emitter
insulating layer
emitter device
Prior art date
Application number
TW086102992A
Other languages
English (en)
Inventor
Toshiaki Kusunoki
Mitsumi Suzuki
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW355807B publication Critical patent/TW355807B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M16/00—Structural combinations of different types of electrochemical generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31781—Lithography by projection from patterned cold cathode
    • H01J2237/31783—M-I-M cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Electron Sources, Ion Sources (AREA)
TW086102992A 1996-03-22 1997-03-11 Thin-film electron emitter device having a multilayer top electrode from suppressing degradation of an insulating layer and application equipment using the same TW355807B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6583196 1996-03-22
JP31450296A JP3633154B2 (ja) 1996-03-22 1996-11-26 薄膜型電子源および薄膜型電子源応用機器

Publications (1)

Publication Number Publication Date
TW355807B true TW355807B (en) 1999-04-11

Family

ID=26406981

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086102992A TW355807B (en) 1996-03-22 1997-03-11 Thin-film electron emitter device having a multilayer top electrode from suppressing degradation of an insulating layer and application equipment using the same

Country Status (7)

Country Link
US (1) US5936257A (zh)
EP (1) EP0797233B1 (zh)
JP (1) JP3633154B2 (zh)
KR (1) KR100421559B1 (zh)
CN (1) CN1105392C (zh)
DE (1) DE69726211T2 (zh)
TW (1) TW355807B (zh)

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JPH1167065A (ja) * 1997-08-08 1999-03-09 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
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JPH1167064A (ja) * 1997-08-08 1999-03-09 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
EP0926698A3 (en) * 1997-12-25 2001-10-17 Pioneer Electronic Corporation Electron emitting device based flat panel display apparatus
WO1999040601A1 (fr) * 1998-02-09 1999-08-12 Matsushita Electric Industrial Co., Ltd. Dispositif emetteur d'electrons, son procede de production, et son procede d'excitation; afficheur d'images comprenant ledit emetteur d'electrons et son procede de fabrication
US6875324B2 (en) 1998-06-17 2005-04-05 Tanaka Kikinzoku Kogyo K.K. Sputtering target material
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US6781305B1 (en) * 1998-12-25 2004-08-24 Sanyo Electric Co., Ltd. Organic electroluminescent device having negative electrode containing a selective combination of elements
DE60035447T2 (de) * 1999-02-25 2008-03-13 Canon K.K. Herstellungsverfahren einer Elektronenemittierenden Vorrichtung
EP1093662A1 (en) * 1999-05-03 2001-04-25 Etec Systems, Inc. Apparatus and method for reducing charge accumulation on a substrate
WO2000074098A1 (fr) * 1999-05-28 2000-12-07 Hitachi, Ltd. Source couche mince d'electrons, affichage et dispositif
JP3878365B2 (ja) 1999-09-09 2007-02-07 株式会社日立製作所 画像表示装置および画像表示装置の製造方法
JP3863325B2 (ja) * 1999-09-10 2006-12-27 株式会社日立製作所 画像表示装置
SG90182A1 (en) 1999-10-18 2002-07-23 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof
JP4253416B2 (ja) * 2000-01-14 2009-04-15 パイオニア株式会社 電子放出素子を用いた撮像素子
US6617774B1 (en) * 2000-04-10 2003-09-09 Hitachi, Ltd. Thin-film electron emitter device having multi-layered electron emission areas
JP3658342B2 (ja) 2000-05-30 2005-06-08 キヤノン株式会社 電子放出素子、電子源及び画像形成装置、並びにテレビジョン放送表示装置
JP2004503061A (ja) 2000-07-11 2004-01-29 エコル　ポリテクニック　フェデラル　ドゥ　ローザンヌ 電子ビームフォトリソグラフィ用ホット電子放出アレイ及び表示スクリーン
JP3658346B2 (ja) 2000-09-01 2005-06-08 キヤノン株式会社 電子放出素子、電子源および画像形成装置、並びに電子放出素子の製造方法
JP3639808B2 (ja) 2000-09-01 2005-04-20 キヤノン株式会社 電子放出素子及び電子源及び画像形成装置及び電子放出素子の製造方法
JP3639809B2 (ja) 2000-09-01 2005-04-20 キヤノン株式会社 電子放出素子，電子放出装置，発光装置及び画像表示装置
JP3610325B2 (ja) 2000-09-01 2005-01-12 キヤノン株式会社 電子放出素子、電子源及び画像形成装置の製造方法
JP3634781B2 (ja) 2000-09-22 2005-03-30 キヤノン株式会社 電子放出装置、電子源、画像形成装置及びテレビジョン放送表示装置
JP2002203499A (ja) * 2000-12-28 2002-07-19 Pioneer Electronic Corp 電子放出素子フラットパネル表示装置
JP3768908B2 (ja) 2001-03-27 2006-04-19 キヤノン株式会社 電子放出素子、電子源、画像形成装置
JP3703415B2 (ja) 2001-09-07 2005-10-05 キヤノン株式会社 電子放出素子、電子源及び画像形成装置、並びに電子放出素子及び電子源の製造方法
JP3605105B2 (ja) 2001-09-10 2004-12-22 キヤノン株式会社 電子放出素子、電子源、発光装置、画像形成装置および基板の各製造方法
US6847045B2 (en) * 2001-10-12 2005-01-25 Hewlett-Packard Development Company, L.P. High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
EP1421594B1 (en) * 2001-12-06 2013-10-09 Pioneer Corporation Electron emitting device and method of manufacturing the same and display apparatus using the same
KR20040010026A (ko) * 2002-07-25 2004-01-31 가부시키가이샤 히타치세이사쿠쇼 전계방출형 화상표시장치
CN100403486C (zh) * 2002-10-18 2008-07-16 株式会社日立制作所 冷阴极型平板显示器
TW568882B (en) * 2002-12-20 2004-01-01 Ind Tech Res Inst Self-organized nano-interfacial structure applied to electric device
JP4203954B2 (ja) * 2002-12-26 2009-01-07 株式会社日立製作所 画像表示装置
JP2005228556A (ja) 2004-02-12 2005-08-25 Pioneer Electronic Corp 電子放出素子を用いた光電変換装置および撮像装置
US7795617B2 (en) * 2004-10-29 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes
US20060151777A1 (en) * 2005-01-12 2006-07-13 Naberhuis Steven L Multi-layer thin film in a ballistic electron emitter
KR20060104657A (ko) 2005-03-31 2006-10-09 삼성에스디아이 주식회사 전자 방출 소자
JP2007189199A (ja) * 2005-12-12 2007-07-26 Tdk Corp キャパシタおよびその製造方法
KR100803207B1 (ko) * 2005-12-21 2008-02-14 삼성전자주식회사 표면전자 방출소자 및 그를 구비한 디스플레이 장치
JP4670717B2 (ja) * 2006-04-14 2011-04-13 株式会社日立製作所 薄膜型電子源
TW201002722A (en) 2008-01-22 2010-01-16 Ricoh Co Ltd Benzobisthiazole compound, benzobisthiazole polymer, organic film including the compound or polymer and transistor including the organic film
KR100975204B1 (ko) * 2008-08-04 2010-08-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
CN101714496B (zh) * 2009-11-10 2014-04-23 西安交通大学 利用多层薄膜型电子源的平面气体激发光源
US9564270B2 (en) 2013-12-27 2017-02-07 Tdk Corporation Thin film capacitor
JP6446877B2 (ja) 2014-07-16 2019-01-09 Tdk株式会社 薄膜キャパシタ
JP6365216B2 (ja) 2014-10-15 2018-08-01 Tdk株式会社 薄膜キャパシタ
JP6641872B2 (ja) 2015-10-15 2020-02-05 Tdk株式会社 電子デバイスシート
TWI700799B (zh) * 2016-10-04 2020-08-01 聯華電子股份有限公司 導電結構、包含導電結構之佈局結構以及導電結構之製作方法

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US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
WO1994020975A1 (en) * 1993-03-11 1994-09-15 Fed Corporation Emitter tip structure and field emission device comprising same, and method of making same
JP3390495B2 (ja) * 1993-08-30 2003-03-24 株式会社日立製作所 Ｍｉｍ構造素子およびその製造方法
JP3746080B2 (ja) * 1994-02-15 2006-02-15 株式会社日立製作所 薄膜型電子源の駆動方法
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Also Published As

Publication number Publication date
JPH09320456A (ja) 1997-12-12
US5936257A (en) 1999-08-10
DE69726211D1 (de) 2003-12-24
KR970067995A (ko) 1997-10-13
EP0797233A3 (en) 1999-12-22
KR100421559B1 (ko) 2004-05-20
EP0797233B1 (en) 2003-11-19
DE69726211T2 (de) 2004-09-09
JP3633154B2 (ja) 2005-03-30
EP0797233A2 (en) 1997-09-24
CN1165393A (zh) 1997-11-19
CN1105392C (zh) 2003-04-09

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees