GB2290661A - Semiconductor structure, and method of manufacturing same - Google Patents

Semiconductor structure, and method of manufacturing same

Info

Publication number
GB2290661A
GB2290661A GB9518447A GB9518447A GB2290661A GB 2290661 A GB2290661 A GB 2290661A GB 9518447 A GB9518447 A GB 9518447A GB 9518447 A GB9518447 A GB 9518447A GB 2290661 A GB2290661 A GB 2290661A
Authority
GB
United Kingdom
Prior art keywords
semiconductor structure
barrier
manufacturing same
electrical device
isolating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9518447A
Other versions
GB9518447D0 (en
GB2290661B (en
Inventor
Alan Gordon Robert Evans
Mohammad Mateen Farooqui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BTG International Ltd
Original Assignee
British Technology Group Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Technology Group Ltd filed Critical British Technology Group Ltd
Publication of GB9518447D0 publication Critical patent/GB9518447D0/en
Publication of GB2290661A publication Critical patent/GB2290661A/en
Application granted granted Critical
Publication of GB2290661B publication Critical patent/GB2290661B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76289—Lateral isolation by air gap

Abstract

A semiconductor structure (10) comprises a layer of semiconducting material (106) having first and second opposing surfaces (108, 110), and electrical device (116) at least a portion of which is adjacent the first surface (108), and an isolating barrier (112) for the electrical device extending through the semiconducting material towards the second surface (110), there being an isolating region (118) to which the barrier extends where there is no electrically non-insulating material spanning the barrier, the isolating region being in direct contact with the ambient medium. A method of fabricating the semiconductor structure is also disclosed, as well as an alternative embodiment of structure. <IMAGE>
GB9518447A 1993-03-17 1994-03-11 Semiconductor structure, and method of manufacturing same Expired - Fee Related GB2290661B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB939305448A GB9305448D0 (en) 1993-03-17 1993-03-17 Semiconductor structure and method of manufacturing same
PCT/GB1994/000475 WO1994022167A1 (en) 1993-03-17 1994-03-11 Semiconductor structure, and method of manufacturing same

Publications (3)

Publication Number Publication Date
GB9518447D0 GB9518447D0 (en) 1995-11-08
GB2290661A true GB2290661A (en) 1996-01-03
GB2290661B GB2290661B (en) 1997-05-14

Family

ID=10732184

Family Applications (2)

Application Number Title Priority Date Filing Date
GB939305448A Pending GB9305448D0 (en) 1993-03-17 1993-03-17 Semiconductor structure and method of manufacturing same
GB9518447A Expired - Fee Related GB2290661B (en) 1993-03-17 1994-03-11 Semiconductor structure, and method of manufacturing same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB939305448A Pending GB9305448D0 (en) 1993-03-17 1993-03-17 Semiconductor structure and method of manufacturing same

Country Status (4)

Country Link
EP (1) EP0689719A1 (en)
JP (1) JPH08507904A (en)
GB (2) GB9305448D0 (en)
WO (1) WO1994022167A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69736351T4 (en) 1996-05-08 2009-07-23 Cyclacel Ltd. METHODS AND MEANS FOR INHIBITING CDK4 ACTIVITY
EP1062684B1 (en) * 1998-01-15 2010-06-09 Cornell Research Foundation, Inc. Trench isolation for micromechanical devices
WO1999059203A1 (en) * 1998-05-08 1999-11-18 Infineon Technologies Ag Substrate and method for manufacturing the same
WO2002025700A2 (en) * 2000-09-21 2002-03-28 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
EP1794799B1 (en) 2004-09-03 2011-05-25 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
JP5389464B2 (en) 2009-02-10 2014-01-15 フリースケール セミコンダクター インコーポレイテッド Manufacturing method of semiconductor device
JP2011044667A (en) * 2009-08-24 2011-03-03 Shin Etsu Handotai Co Ltd Method for manufacturing semiconductor device
JP6237515B2 (en) * 2014-07-17 2017-11-29 株式会社デンソー Pressure sensor and manufacturing method thereof
US11049788B2 (en) 2019-10-18 2021-06-29 Microsoft Technology Licensing, Llc Integrated circuit chip device with thermal control

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439712A1 (en) * 1964-08-08 1968-11-28 Telefunken Patent Process for the production of isolated monocrystalline areas with low shunt capacitance in the semiconductor body of a microminiaturized circuit arrangement based on solid bodies
GB1223705A (en) * 1967-04-19 1971-03-03 Hitachi Ltd Semiconductor devices
US4070230A (en) * 1974-07-04 1978-01-24 Siemens Aktiengesellschaft Semiconductor component with dielectric carrier and its manufacture
US4072982A (en) * 1974-07-04 1978-02-07 Siemens Aktiengesellschaft Semiconductor component with dielectric carrier and its manufacture
GB1558957A (en) * 1978-04-11 1980-01-09 Standard Telephones Cables Ltd Isolating semiconductor devices
WO1991005366A1 (en) * 1989-09-29 1991-04-18 The Government Of The United States Of America, As Represented By The Secretary Of The Department Of The Navy Method of producing a thin silicon-on-insulator layer
EP0539311A2 (en) * 1991-10-23 1993-04-28 International Business Machines Corporation Buried air dielectric isolation of silicon islands

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969944A (en) * 1982-10-14 1984-04-20 Sanken Electric Co Ltd Manufacture of integrated circuit from which bottom insulator is isolated
US4888300A (en) * 1985-11-07 1989-12-19 Fairchild Camera And Instrument Corporation Submerged wall isolation of silicon islands

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439712A1 (en) * 1964-08-08 1968-11-28 Telefunken Patent Process for the production of isolated monocrystalline areas with low shunt capacitance in the semiconductor body of a microminiaturized circuit arrangement based on solid bodies
GB1223705A (en) * 1967-04-19 1971-03-03 Hitachi Ltd Semiconductor devices
US4070230A (en) * 1974-07-04 1978-01-24 Siemens Aktiengesellschaft Semiconductor component with dielectric carrier and its manufacture
US4072982A (en) * 1974-07-04 1978-02-07 Siemens Aktiengesellschaft Semiconductor component with dielectric carrier and its manufacture
GB1558957A (en) * 1978-04-11 1980-01-09 Standard Telephones Cables Ltd Isolating semiconductor devices
WO1991005366A1 (en) * 1989-09-29 1991-04-18 The Government Of The United States Of America, As Represented By The Secretary Of The Department Of The Navy Method of producing a thin silicon-on-insulator layer
EP0539311A2 (en) * 1991-10-23 1993-04-28 International Business Machines Corporation Buried air dielectric isolation of silicon islands

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Patent Abstracts of Japan vol 8, no 176 (E-260)(1613)14.8.84&JP A 59069944 (SANKEN DENKI KK)20.4.84 *

Also Published As

Publication number Publication date
JPH08507904A (en) 1996-08-20
GB9518447D0 (en) 1995-11-08
GB9305448D0 (en) 1993-05-05
EP0689719A1 (en) 1996-01-03
GB2290661B (en) 1997-05-14
WO1994022167A1 (en) 1994-09-29

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19990311