TW351020B - Group III-V compound semiconductor, method of manufacturing the same, and light emitting element - Google Patents

Group III-V compound semiconductor, method of manufacturing the same, and light emitting element

Info

Publication number
TW351020B
TW351020B TW085101006A TW85101006A TW351020B TW 351020 B TW351020 B TW 351020B TW 085101006 A TW085101006 A TW 085101006A TW 85101006 A TW85101006 A TW 85101006A TW 351020 B TW351020 B TW 351020B
Authority
TW
Taiwan
Prior art keywords
group iii
compound semiconductor
manufacturing
light emitting
emitting element
Prior art date
Application number
TW085101006A
Other languages
English (en)
Inventor
Yasushi Iechika
Tomoyuki Takada
Yoshinobu Ono
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP17872595A external-priority patent/JP3713751B2/ja
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Application granted granted Critical
Publication of TW351020B publication Critical patent/TW351020B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
TW085101006A 1995-02-03 1996-01-27 Group III-V compound semiconductor, method of manufacturing the same, and light emitting element TW351020B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1665195 1995-02-03
JP7867195 1995-04-04
JP17872595A JP3713751B2 (ja) 1995-07-14 1995-07-14 ３−５族化合物半導体および発光素子
JP20595495 1995-08-11

Publications (1)

Publication Number Publication Date
TW351020B true TW351020B (en) 1999-01-21

Family

ID=27456613

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085101006A TW351020B (en) 1995-02-03 1996-01-27 Group III-V compound semiconductor, method of manufacturing the same, and light emitting element

Country Status (3)

Country Link
US (2) US6346720B1 (zh)
DE (1) DE19603782A1 (zh)
TW (1) TW351020B (zh)

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US6440823B1 (en) * 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
DE19613265C1 (de) * 1996-04-02 1997-04-17 Siemens Ag Bauelement in stickstoffhaltigem Halbleitermaterial
US5729029A (en) * 1996-09-06 1998-03-17 Hewlett-Packard Company Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices
JP3642157B2 (ja) * 1997-05-26 2005-04-27 ソニー株式会社 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ
DE69835216T2 (de) * 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
US6555452B2 (en) * 1997-11-18 2003-04-29 Technologies And Devices International, Inc. Method for growing p-type III-V compound material utilizing HVPE techniques
US7384479B2 (en) 1998-04-13 2008-06-10 Ricoh Company, Ltd. Laser diode having an active layer containing N and operable in a 0.6 μm wavelength
US6563851B1 (en) * 1998-04-13 2003-05-13 Ricoh Company, Ltd. Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band
US6423984B1 (en) * 1998-09-10 2002-07-23 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride compound semiconductor
WO2001033643A1 (en) 1999-10-29 2001-05-10 Ohio University BAND GAP ENGINEERING OF AMORPHOUS Al-Ga-N ALLOYS
US7968362B2 (en) 2001-03-27 2011-06-28 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
JP2004356522A (ja) * 2003-05-30 2004-12-16 Sumitomo Chem Co Ltd ３−５族化合物半導体、その製造方法及びその用途
DE112005002319T5 (de) * 2004-09-28 2007-08-23 Sumitomo Chemical Co., Ltd. Gruppe-III-V-Verbindungshalbleiter und Verfahren zur Herstellung desselben
CN100435359C (zh) * 2004-10-10 2008-11-19 晶元光电股份有限公司 半导体发光元件及其制造方法
JP5023318B2 (ja) * 2005-05-19 2012-09-12 国立大学法人三重大学 ３−５族窒化物半導体積層基板、３−５族窒化物半導体自立基板の製造方法、及び半導体素子
JP4966530B2 (ja) 2005-09-15 2012-07-04 国立大学法人 新潟大学 蛍光体
JP2008091789A (ja) * 2006-10-04 2008-04-17 Hitachi Cable Ltd 発光ダイオード
TWI597862B (zh) * 2013-08-30 2017-09-01 晶元光電股份有限公司 具阻障層的光電半導體元件
CN104538518B (zh) * 2015-01-12 2017-07-14 厦门市三安光电科技有限公司 氮化物发光二极管
CN104600165B (zh) * 2015-02-06 2018-03-23 安徽三安光电有限公司 一种氮化物发光二极体结构

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DE3124456C2 (de) * 1980-06-23 1985-04-25 Futaba Denshi Kogyo K.K., Mobara, Chiba Halbleiterbauelement sowie Verfahren zu dessen Herstellung
DE68909632T2 (de) * 1988-02-09 1994-03-10 Toshiba Kawasaki Kk Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren.
JP3026087B2 (ja) * 1989-03-01 2000-03-27 豊田合成株式会社 窒化ガリウム系化合物半導体の気相成長方法
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US5173751A (en) * 1991-01-21 1992-12-22 Pioneer Electronic Corporation Semiconductor light emitting device
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JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
US5381756A (en) * 1992-03-04 1995-01-17 Fujitsu Limited Magnesium doping in III-V compound semiconductor
JP2803791B2 (ja) * 1992-06-08 1998-09-24 シャープ株式会社 半導体素子の製造方法
JP3243768B2 (ja) 1992-07-06 2002-01-07 日本電信電話株式会社 半導体発光素子
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JPH0661527A (ja) * 1992-08-07 1994-03-04 Nippon Telegr & Teleph Corp <Ntt> 半導体発光素子及びその作製方法
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JPH06350137A (ja) * 1993-06-08 1994-12-22 Toyoda Gosei Co Ltd 窒素−３族元素化合物半導体発光素子
DE69503299T2 (de) * 1994-04-20 1999-01-21 Toyoda Gosei Kk Galliumnitrid-Diodenlaser und Verfahren zu seiner Herstellung
US5604763A (en) * 1994-04-20 1997-02-18 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor laser diode and method for producing same
JPH0832112A (ja) * 1994-07-20 1996-02-02 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
US5740192A (en) * 1994-12-19 1998-04-14 Kabushiki Kaisha Toshiba Semiconductor laser

Also Published As

Publication number Publication date
US6346720B1 (en) 2002-02-12
DE19603782A1 (de) 1996-08-08
US6472298B2 (en) 2002-10-29
US20020053680A1 (en) 2002-05-09

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