TW350095B - Cutting method and apparatus for semiconductor materials - Google Patents

Cutting method and apparatus for semiconductor materials

Info

Publication number
TW350095B
TW350095B TW085114112A TW85114112A TW350095B TW 350095 B TW350095 B TW 350095B TW 085114112 A TW085114112 A TW 085114112A TW 85114112 A TW85114112 A TW 85114112A TW 350095 B TW350095 B TW 350095B
Authority
TW
Taiwan
Prior art keywords
semiconductor
cutting method
semiconductor materials
etching gas
cuttuing
Prior art date
Application number
TW085114112A
Other languages
English (en)
Chinese (zh)
Inventor
Akira Yoshino
Takashi Yokoyama
Nobunori Omori
Kazuma Yamamoto
Original Assignee
Daido Hoxan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP30274995A external-priority patent/JP3485136B2/ja
Priority claimed from JP30275095A external-priority patent/JPH09148306A/ja
Application filed by Daido Hoxan Inc filed Critical Daido Hoxan Inc
Application granted granted Critical
Publication of TW350095B publication Critical patent/TW350095B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Drying Of Semiconductors (AREA)
TW085114112A 1995-11-21 1996-11-18 Cutting method and apparatus for semiconductor materials TW350095B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30274995A JP3485136B2 (ja) 1995-11-21 1995-11-21 ウエハの製法およびそれに用いる装置
JP30275095A JPH09148306A (ja) 1995-11-21 1995-11-21 ウエハの微細加工法およびそれに用いる装置

Publications (1)

Publication Number Publication Date
TW350095B true TW350095B (en) 1999-01-11

Family

ID=26563254

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085114112A TW350095B (en) 1995-11-21 1996-11-18 Cutting method and apparatus for semiconductor materials

Country Status (5)

Country Link
US (1) US5912186A (https=)
EP (1) EP0776031B1 (https=)
KR (1) KR970030443A (https=)
DE (1) DE69626360T2 (https=)
TW (1) TW350095B (https=)

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US5888906A (en) 1996-09-16 1999-03-30 Micron Technology, Inc. Plasmaless dry contact cleaning method using interhalogen compounds
IT1308986B1 (it) * 1999-01-28 2002-01-15 Sacmi Macchina per il taglio della parete cilindrica di capsule in plasticaper formare una linea di frattura atta a favorire il distacco di un
DE19963824A1 (de) * 1999-12-30 2001-07-19 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Bearbeiten von Halbleitermaterial
DE10014445C2 (de) * 2000-03-23 2002-01-24 Wacker Siltronic Halbleitermat Verfahren zum Zerteilen eines Halbleiterstabes
JP3530114B2 (ja) * 2000-07-11 2004-05-24 忠弘 大見 単結晶の切断方法
US7005081B2 (en) * 2001-07-05 2006-02-28 Canon Kabushiki Kaisha Base material cutting method, base material cutting apparatus, ingot cutting method, ingot cutting apparatus and wafer producing method
US20030155328A1 (en) * 2002-02-15 2003-08-21 Huth Mark C. Laser micromachining and methods and systems of same
JP2004090534A (ja) * 2002-09-02 2004-03-25 Tokyo Electron Ltd 基板の加工装置および加工方法
US7150811B2 (en) * 2002-11-26 2006-12-19 Pei Company Ion beam for target recovery
US6969822B2 (en) * 2003-05-13 2005-11-29 Hewlett-Packard Development Company, L.P. Laser micromachining systems
US7754999B2 (en) 2003-05-13 2010-07-13 Hewlett-Packard Development Company, L.P. Laser micromachining and methods of same
DE102006003605B4 (de) * 2006-01-25 2010-09-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Materialabtrag an Si-Festkörpern und dessen Verwendung
ATE465843T1 (de) * 2006-01-25 2010-05-15 Fraunhofer Ges Forschung Verfahren zum materialabtrag an festkörpern und dessen verwendung
DE102006003608A1 (de) * 2006-01-25 2007-09-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Materialabtrag an Festkörpern und dessen Verwendung
DE102007018080B3 (de) * 2007-04-17 2008-06-19 Eisele, Christopher, Dr. Verfahren und Vorrichtung zur Herstellung von dünnen Scheiben oder Folien aus Halbleiterkörpern
US9452495B1 (en) * 2011-07-08 2016-09-27 Sixpoint Materials, Inc. Laser slicer of crystal ingots and a method of slicing gallium nitride ingots using a laser slicer
FR3002687B1 (fr) * 2013-02-26 2015-03-06 Soitec Silicon On Insulator Procede de traitement d une structure
JP6399913B2 (ja) 2014-12-04 2018-10-03 株式会社ディスコ ウエーハの生成方法
JP6358941B2 (ja) 2014-12-04 2018-07-18 株式会社ディスコ ウエーハの生成方法
JP6391471B2 (ja) * 2015-01-06 2018-09-19 株式会社ディスコ ウエーハの生成方法
JP6395613B2 (ja) * 2015-01-06 2018-09-26 株式会社ディスコ ウエーハの生成方法
JP6395633B2 (ja) 2015-02-09 2018-09-26 株式会社ディスコ ウエーハの生成方法
JP6395632B2 (ja) 2015-02-09 2018-09-26 株式会社ディスコ ウエーハの生成方法
JP6395634B2 (ja) 2015-02-09 2018-09-26 株式会社ディスコ ウエーハの生成方法
JP6494382B2 (ja) 2015-04-06 2019-04-03 株式会社ディスコ ウエーハの生成方法
JP6429715B2 (ja) 2015-04-06 2018-11-28 株式会社ディスコ ウエーハの生成方法
JP6425606B2 (ja) 2015-04-06 2018-11-21 株式会社ディスコ ウエーハの生成方法
JP6472333B2 (ja) 2015-06-02 2019-02-20 株式会社ディスコ ウエーハの生成方法
JP6482423B2 (ja) 2015-07-16 2019-03-13 株式会社ディスコ ウエーハの生成方法
JP6472347B2 (ja) 2015-07-21 2019-02-20 株式会社ディスコ ウエーハの薄化方法
JP6482425B2 (ja) 2015-07-21 2019-03-13 株式会社ディスコ ウエーハの薄化方法
JP6690983B2 (ja) 2016-04-11 2020-04-28 株式会社ディスコ ウエーハ生成方法及び実第２のオリエンテーションフラット検出方法
JP6858587B2 (ja) 2017-02-16 2021-04-14 株式会社ディスコ ウエーハ生成方法
DE102019122827A1 (de) * 2019-08-26 2021-03-04 Photonic Sense GmbH Vorrichtung und Verfahren zum Ausschneiden einer Teilgeometrie aus einem Materialblock
TWI803019B (zh) * 2021-10-20 2023-05-21 國立中央大學 一種晶柱快速切片方法
CN119328331B (zh) * 2024-12-18 2025-03-07 深圳爱仕特科技有限公司 一种递进式半导体芯片生产设备及其工作方法

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US2841477A (en) * 1957-03-04 1958-07-01 Pacific Semiconductors Inc Photochemically activated gaseous etching method
JPS58196022A (ja) * 1982-05-11 1983-11-15 Nec Home Electronics Ltd 半導体装置の製造方法
US4465550A (en) * 1982-06-16 1984-08-14 General Signal Corporation Method and apparatus for slicing semiconductor ingots
US4624736A (en) * 1984-07-24 1986-11-25 The United States Of America As Represented By The United States Department Of Energy Laser/plasma chemical processing of substrates
JPH0691014B2 (ja) * 1984-11-14 1994-11-14 株式会社日立製作所 半導体装置の製造装置
US4731158A (en) * 1986-09-12 1988-03-15 International Business Machines Corporation High rate laser etching technique
JPH03257182A (ja) * 1990-03-07 1991-11-15 Hitachi Ltd 表面加工装置
US5151389A (en) * 1990-09-10 1992-09-29 Rockwell International Corporation Method for dicing semiconductor substrates using an excimer laser beam
US5352327A (en) * 1992-07-10 1994-10-04 Harris Corporation Reduced temperature suppression of volatilization of photoexcited halogen reaction products from surface of silicon wafer
US5334280A (en) * 1993-05-21 1994-08-02 General Electric Company Suppression of graphite formation during laser etching of diamond
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films

Also Published As

Publication number Publication date
US5912186A (en) 1999-06-15
EP0776031B1 (en) 2003-02-26
DE69626360D1 (de) 2003-04-03
KR970030443A (ko) 1997-06-26
DE69626360T2 (de) 2003-10-30
EP0776031A3 (https=) 1997-07-02
EP0776031A2 (en) 1997-05-28

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees