TW346668B - Contact formation for a semiconductor device - Google Patents

Contact formation for a semiconductor device

Info

Publication number
TW346668B
TW346668B TW086112484A TW86112484A TW346668B TW 346668 B TW346668 B TW 346668B TW 086112484 A TW086112484 A TW 086112484A TW 86112484 A TW86112484 A TW 86112484A TW 346668 B TW346668 B TW 346668B
Authority
TW
Taiwan
Prior art keywords
contact hole
insulating layer
semiconductor device
etching
contact formation
Prior art date
Application number
TW086112484A
Other languages
English (en)
Inventor
Hisayuki Kaeriyama
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW346668B publication Critical patent/TW346668B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
TW086112484A 1996-08-28 1997-10-01 Contact formation for a semiconductor device TW346668B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2504196P 1996-08-28 1996-08-28

Publications (1)

Publication Number Publication Date
TW346668B true TW346668B (en) 1998-12-01

Family

ID=21823728

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086112484A TW346668B (en) 1996-08-28 1997-10-01 Contact formation for a semiconductor device

Country Status (5)

Country Link
EP (1) EP0827195A1 (zh)
JP (1) JPH1092935A (zh)
KR (1) KR19980019002A (zh)
SG (1) SG54548A1 (zh)
TW (1) TW346668B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW460748B (en) * 1998-05-26 2001-10-21 Matsushita Electronics Corp Capacitor and method for fabricating the same
JP3214449B2 (ja) 1998-06-12 2001-10-02 日本電気株式会社 半導体記憶装置の製造方法
JP2000031273A (ja) * 1998-07-13 2000-01-28 Nec Corp 半導体装置およびその製造方法
US6358756B1 (en) * 2001-02-07 2002-03-19 Micron Technology, Inc. Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme
KR100979229B1 (ko) * 2003-04-23 2010-08-31 주식회사 하이닉스반도체 반도체소자의 캐패시터 형성방법
JP3976703B2 (ja) 2003-04-30 2007-09-19 エルピーダメモリ株式会社 半導体装置の製造方法
KR100980294B1 (ko) * 2003-06-28 2010-09-06 주식회사 하이닉스반도체 반도체 소자의 커패시터 형성방법
JP2007180493A (ja) 2005-11-30 2007-07-12 Elpida Memory Inc 半導体装置の製造方法
KR100859636B1 (ko) 2007-09-14 2008-09-23 주식회사 동부하이텍 반도체 장치의 제조 방법
JP2020009840A (ja) * 2018-07-04 2020-01-16 東京エレクトロン株式会社 エッチング方法及び基板処理装置
US11600519B2 (en) * 2019-09-16 2023-03-07 International Business Machines Corporation Skip-via proximity interconnect

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0302647A1 (en) * 1987-08-03 1989-02-08 AT&T Corp. Aluminum plug using insulating sidewall space
US5279990A (en) * 1990-03-02 1994-01-18 Motorola, Inc. Method of making a small geometry contact using sidewall spacers
KR950000658B1 (en) * 1992-02-12 1995-01-27 Hyundai Electronics Co Ltd Forming method of contact hole in semiconductor devices
US5262352A (en) * 1992-08-31 1993-11-16 Motorola, Inc. Method for forming an interconnection structure for conductive layers
KR0136569B1 (ko) * 1992-10-24 1998-04-29 김주용 고집적 반도체 소자의 콘택홀 형성 방법

Also Published As

Publication number Publication date
JPH1092935A (ja) 1998-04-10
EP0827195A1 (en) 1998-03-04
SG54548A1 (en) 1998-11-16
KR19980019002A (ko) 1998-06-05

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