TW344086B - Vacuum exhaust system for a low pressure CVD device - Google Patents

Vacuum exhaust system for a low pressure CVD device

Info

Publication number
TW344086B
TW344086B TW084106882A TW84106882A TW344086B TW 344086 B TW344086 B TW 344086B TW 084106882 A TW084106882 A TW 084106882A TW 84106882 A TW84106882 A TW 84106882A TW 344086 B TW344086 B TW 344086B
Authority
TW
Taiwan
Prior art keywords
valve
pipeline
main pipeline
low pressure
exhaust system
Prior art date
Application number
TW084106882A
Other languages
English (en)
Inventor
Junichi Arami
Masayuki Kitamura
Mitsuaki Omino
Original Assignee
Tokyo Electron Co Ltd
Tokyo Electron Tohoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Co Ltd, Tokyo Electron Tohoku Kk filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW344086B publication Critical patent/TW344086B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW084106882A 1994-07-01 1995-07-04 Vacuum exhaust system for a low pressure CVD device TW344086B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17342794 1994-07-01
JP28439194A JP3501524B2 (ja) 1994-07-01 1994-10-24 処理装置の真空排気システム

Publications (1)

Publication Number Publication Date
TW344086B true TW344086B (en) 1998-11-01

Family

ID=26495404

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084106882A TW344086B (en) 1994-07-01 1995-07-04 Vacuum exhaust system for a low pressure CVD device

Country Status (4)

Country Link
US (1) US5575853A (zh)
JP (1) JP3501524B2 (zh)
KR (1) KR100231255B1 (zh)
TW (1) TW344086B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107078052A (zh) * 2014-09-30 2017-08-18 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法及记录介质

Families Citing this family (140)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6022195A (en) 1988-09-13 2000-02-08 Helix Technology Corporation Electronically controlled vacuum pump with control module
US6318093B2 (en) 1988-09-13 2001-11-20 Helix Technology Corporation Electronically controlled cryopump
US6902378B2 (en) * 1993-07-16 2005-06-07 Helix Technology Corporation Electronically controlled vacuum pump
WO1996024949A1 (fr) * 1995-02-10 1996-08-15 Tokyo Electron Limited Procede de traitement thermique et appareil
US6217937B1 (en) * 1998-07-15 2001-04-17 Cornell Research Foundation, Inc. High throughput OMVPE apparatus
JP3606754B2 (ja) * 1998-11-27 2005-01-05 シーケーディ株式会社 真空圧力制御弁
US7077159B1 (en) * 1998-12-23 2006-07-18 Applied Materials, Inc. Processing apparatus having integrated pumping system
US6174376B1 (en) * 1999-06-01 2001-01-16 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus for evacuating a process chamber
US6382249B1 (en) * 1999-10-04 2002-05-07 Ebara Corporation Vacuum exhaust system
JP3543949B2 (ja) * 1999-11-09 2004-07-21 東京エレクトロン株式会社 熱処理装置
FR2808098B1 (fr) * 2000-04-20 2002-07-19 Cit Alcatel Procede et dispositif de conditionnement de l'atmosphere dans une chambre de procedes
US6544869B1 (en) * 2000-06-23 2003-04-08 Matsushita Electric Industrial Co., Ltd. Method and apparatus for depositing semiconductor film and method for fabricating semiconductor device
JP3872952B2 (ja) * 2000-10-27 2007-01-24 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US6770145B2 (en) * 2000-12-11 2004-08-03 Tanaka Kikinzoku Kogyo K.K. Low-pressure CVD apparatus and method of manufacturing a thin film
JP2003074468A (ja) * 2001-08-31 2003-03-12 Toshiba Corp 真空排気システム及びその監視・制御方法
KR100876318B1 (ko) * 2001-09-06 2008-12-31 가부시키가이샤 아루박 진공배기장치 및 진공배기장치의 운전방법
KR100434493B1 (ko) * 2001-10-05 2004-06-05 삼성전자주식회사 원자층 증착 장치 및 그 구동 방법
JP2003158080A (ja) * 2001-11-22 2003-05-30 Mitsubishi Electric Corp 半導体製造装置、半導体製造装置における堆積物除去方法、および半導体装置の製造方法
US6739840B2 (en) * 2002-05-22 2004-05-25 Applied Materials Inc Speed control of variable speed pump
KR100541814B1 (ko) * 2003-09-15 2006-01-11 삼성전자주식회사 화학기상증착장치
US7437944B2 (en) * 2003-12-04 2008-10-21 Applied Materials, Inc. Method and apparatus for pressure and mix ratio control
EP1741802B1 (en) * 2004-03-29 2013-08-21 Tadahiro Ohmi Film-forming apparatus and film-forming method
GB0418771D0 (en) * 2004-08-20 2004-09-22 Boc Group Plc Evacuation of a load lock enclosure
KR20060063188A (ko) * 2004-12-07 2006-06-12 삼성전자주식회사 화학기상증착장치 및 그를 이용한 화학기상증착방법
US8475624B2 (en) * 2005-09-27 2013-07-02 Lam Research Corporation Method and system for distributing gas for a bevel edge etcher
JP4943047B2 (ja) 2006-04-07 2012-05-30 東京エレクトロン株式会社 処理装置及び処理方法
JP2007324478A (ja) * 2006-06-02 2007-12-13 Hitachi Kokusai Electric Inc 基板処理装置
JP5048352B2 (ja) 2007-01-31 2012-10-17 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2008144766A (ja) * 2008-02-04 2008-06-26 Tadahiro Omi 真空装置
JP4961381B2 (ja) * 2008-04-14 2012-06-27 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
WO2010008021A1 (ja) * 2008-07-15 2010-01-21 キヤノンアネルバ株式会社 プラズマ処理方法及びプラズマ処理装置
US8623141B2 (en) * 2009-05-18 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Piping system and control for semiconductor processing
JP5015280B2 (ja) * 2010-02-26 2012-08-29 Ｔｄｋ株式会社 基板収納ポッドおよびその蓋部材並びに基板の処理装置
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
KR101330856B1 (ko) * 2011-05-25 2013-11-18 주식회사 케이씨텍 배기부의 역류를 방지하는 원자층 증착장치
US10428807B2 (en) * 2011-12-09 2019-10-01 Applied Materials, Inc. Pump power consumption enhancement
JP5464235B2 (ja) * 2012-06-06 2014-04-09 Ｔｄｋ株式会社 基板収納ポッドおよびその蓋部材並びに基板の処理装置
KR101995358B1 (ko) * 2012-06-28 2019-07-02 스털링 인더스트리 컨설트 게엠베하 챔버를 배기시키기 위한 방법 및 펌프 장치
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US20140311581A1 (en) * 2013-04-19 2014-10-23 Applied Materials, Inc. Pressure controller configuration for semiconductor processing applications
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9575494B2 (en) * 2013-11-14 2017-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for processing wafer
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
KR101594932B1 (ko) * 2014-04-01 2016-02-18 피에스케이 주식회사 기판 처리 장치 및 방법
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
DE102015106279A1 (de) * 2015-04-23 2016-10-27 Mobilplan Industrie- Und Umwelttechnik Ventileinrichtung und Verfahren zum Betrieb der Ventileinrichtung
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
JP6727871B2 (ja) * 2016-03-18 2020-07-22 東京エレクトロン株式会社 排気システム及びこれを用いた基板処理装置
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US10950500B2 (en) 2017-05-05 2021-03-16 Applied Materials, Inc. Methods and apparatus for filling a feature disposed in a substrate
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US11393703B2 (en) * 2018-06-18 2022-07-19 Applied Materials, Inc. Apparatus and method for controlling a flow process material to a deposition chamber
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
GB2579360A (en) * 2018-11-28 2020-06-24 Edwards Ltd Multiple chamber vacuum exhaust system
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
JP7362048B2 (ja) * 2019-07-31 2023-10-17 大学共同利用機関法人 高エネルギー加速器研究機構 真空排気方法及び装置
US11742188B2 (en) * 2019-08-15 2023-08-29 Tokyo Electron Limited Substrate processing method, pressure control apparatus and substrate processing system
CN110408913B (zh) * 2019-08-26 2021-09-10 湖南红太阳光电科技有限公司 管式pecvd设备的压力控制装置
JP2022061344A (ja) 2020-10-06 2022-04-18 エドワーズ株式会社 真空排気システム
WO2024069767A1 (ja) * 2022-09-27 2024-04-04 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム及び基板処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170234A (ja) * 1984-02-15 1985-09-03 Semiconductor Energy Lab Co Ltd 気相反応装置および気相反応被膜作製方法
JP2717236B2 (ja) * 1991-06-14 1998-02-18 株式会社 半導体エネルギー研究所 気相反応被膜作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107078052A (zh) * 2014-09-30 2017-08-18 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法及记录介质
CN107078052B (zh) * 2014-09-30 2021-04-23 株式会社国际电气 衬底处理装置、半导体器件的制造方法及记录介质

Also Published As

Publication number Publication date
JP3501524B2 (ja) 2004-03-02
KR960005825A (ko) 1996-02-23
KR100231255B1 (ko) 1999-11-15
JPH0874737A (ja) 1996-03-19
US5575853A (en) 1996-11-19

Similar Documents

Publication Publication Date Title
TW344086B (en) Vacuum exhaust system for a low pressure CVD device
AU6599900A (en) Pressure control device for a pipeline
ES2136232T3 (es) Estacion de bombeo de vacio.
EP0893132A3 (en) Volumetric infusion pump
ATE406666T1 (de) Säulenvorrichtung für strahl aus geladenen teilchen
WO2005005060A3 (en) Device for conveying powders through pipelines
GB2341433A (en) Pig delivery and transport system for subsea wells
AU2001285050A1 (en) Pressure regulator
ZA200507105B (en) Apparatus and process for the purification of air
TW336333B (en) A substrate processing apparatus
MY116869A (en) Continuous vacuum processing apparatus
CA2271996A1 (fr) Dispositif autonome de limitation du debit d'un fluide dans une canalisation et circuit de carburant pour aeronef comportant un tel dispositif
EP0401989A3 (en) A one way air admittance valve
CA2654972A1 (en) Twin blowers for gas separation plants
MXPA02002433A (es) Dispositivo para reducir las pulsaciones de presion en lineas hidraulicas.
ATE238497T1 (de) Hydraulischer steuerkreis für einen vorrangigen und für einen nachrangigen hydraulischen verbraucher
WO1996041485A3 (en) Pipelined multiplexing for a multiport memory
TW327669B (en) Air driven diaphragm pump
TW341617B (en) Variable area restrictor and turbine engine comprising the same
JPH0344238B2 (zh)
MXPA02011315A (es) Metodo y aparato para separar gas no condensable de un fluido de trabajo en un sistema de energia binario.
AU2003218610A1 (en) Cooling system for sleeves that are fixed to a carrier plate
AU3710199A (en) Device and method for alternating pressure flushing
WO2002064953A8 (en) Silencer and exhaust gas system comprising a silencer
EP1118749A3 (de) Abgaskatalysator