TW340970B - Method to produce a MIS-structure on silicon carbonite - Google Patents
Method to produce a MIS-structure on silicon carboniteInfo
- Publication number
- TW340970B TW340970B TW086109438A TW86109438A TW340970B TW 340970 B TW340970 B TW 340970B TW 086109438 A TW086109438 A TW 086109438A TW 86109438 A TW86109438 A TW 86109438A TW 340970 B TW340970 B TW 340970B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- mis
- produce
- carbonite
- silicon
- Prior art date
Links
- MHESUICHGPWXRV-UHFFFAOYSA-N methanediolate silicon(4+) Chemical compound C([O-])[O-].[Si+4].C([O-])[O-] MHESUICHGPWXRV-UHFFFAOYSA-N 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000012772 electrical insulation material Substances 0.000 abstract 1
- 238000009472 formulation Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19629267 | 1996-07-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW340970B true TW340970B (en) | 1998-09-21 |
Family
ID=7800333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086109438A TW340970B (en) | 1996-07-19 | 1997-07-04 | Method to produce a MIS-structure on silicon carbonite |
Country Status (5)
Country | Link |
---|---|
US (1) | US6117751A (zh) |
EP (1) | EP0831520B1 (zh) |
JP (1) | JPH1070273A (zh) |
DE (1) | DE59711968D1 (zh) |
TW (1) | TW340970B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7560327B2 (en) | 2005-12-28 | 2009-07-14 | Hynix Semiconductor Inc. | Method of fabricating semiconductor device with dual gate structure |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19803013B4 (de) * | 1998-01-27 | 2005-02-03 | Robert Bosch Gmbh | Verfahren zum Ablösen einer Epitaxieschicht oder eines Schichtsystems und nachfolgendem Aufbringen auf einen alternativen Träger |
US8080826B1 (en) | 2002-02-14 | 2011-12-20 | Rf Micro Devices, Inc. | High performance active and passive structures based on silicon material bonded to silicon carbide |
US20030151051A1 (en) * | 2002-02-14 | 2003-08-14 | Xemod, Inc. | High performance active and passive structures based on silicon material grown epitaxially or bonded to silicon carbide substrate |
FR2876497B1 (fr) * | 2004-10-13 | 2007-03-23 | Commissariat Energie Atomique | Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabrication |
JP2009212366A (ja) | 2008-03-05 | 2009-09-17 | Oki Semiconductor Co Ltd | 半導体装置の製造方法 |
JP5521317B2 (ja) | 2008-11-20 | 2014-06-11 | トヨタ自動車株式会社 | p型SiC半導体 |
JP2013175593A (ja) * | 2012-02-24 | 2013-09-05 | Rohm Co Ltd | 半導体装置およびその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4479831A (en) * | 1980-09-15 | 1984-10-30 | Burroughs Corporation | Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment |
US5147826A (en) * | 1990-08-06 | 1992-09-15 | The Pennsylvania Research Corporation | Low temperature crystallization and pattering of amorphous silicon films |
JPH05343316A (ja) * | 1991-09-30 | 1993-12-24 | Nec Corp | 半導体装置の製造方法 |
JPH0786515A (ja) * | 1993-09-16 | 1995-03-31 | Nec Corp | ポリシリコン抵抗体の形成方法 |
JP2689935B2 (ja) * | 1995-02-01 | 1997-12-10 | 日本電気株式会社 | 半導体薄膜形成方法 |
US5869389A (en) * | 1996-01-18 | 1999-02-09 | Micron Technology, Inc. | Semiconductor processing method of providing a doped polysilicon layer |
-
1997
- 1997-07-03 DE DE59711968T patent/DE59711968D1/de not_active Expired - Lifetime
- 1997-07-03 EP EP97111179A patent/EP0831520B1/de not_active Expired - Lifetime
- 1997-07-04 TW TW086109438A patent/TW340970B/zh not_active IP Right Cessation
- 1997-07-16 JP JP9190807A patent/JPH1070273A/ja active Pending
- 1997-07-18 US US08/896,439 patent/US6117751A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7560327B2 (en) | 2005-12-28 | 2009-07-14 | Hynix Semiconductor Inc. | Method of fabricating semiconductor device with dual gate structure |
Also Published As
Publication number | Publication date |
---|---|
EP0831520B1 (de) | 2004-09-29 |
DE59711968D1 (de) | 2004-11-04 |
US6117751A (en) | 2000-09-12 |
EP0831520A3 (de) | 1998-12-30 |
JPH1070273A (ja) | 1998-03-10 |
EP0831520A2 (de) | 1998-03-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |