TW334634B - Low voltage reference circuit and method of operation - Google Patents

Low voltage reference circuit and method of operation

Info

Publication number
TW334634B
TW334634B TW085113276A TW85113276A TW334634B TW 334634 B TW334634 B TW 334634B TW 085113276 A TW085113276 A TW 085113276A TW 85113276 A TW85113276 A TW 85113276A TW 334634 B TW334634 B TW 334634B
Authority
TW
Taiwan
Prior art keywords
voltage
voltage reference
circuit
signal
multiplied
Prior art date
Application number
TW085113276A
Other languages
English (en)
Inventor
J Nahas Joseph
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of TW334634B publication Critical patent/TW334634B/zh

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
TW085113276A 1995-11-20 1996-10-30 Low voltage reference circuit and method of operation TW334634B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/560,876 US5614816A (en) 1995-11-20 1995-11-20 Low voltage reference circuit and method of operation

Publications (1)

Publication Number Publication Date
TW334634B true TW334634B (en) 1998-06-21

Family

ID=24239728

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085113276A TW334634B (en) 1995-11-20 1996-10-30 Low voltage reference circuit and method of operation

Country Status (4)

Country Link
US (1) US5614816A (zh)
EP (1) EP0774704A3 (zh)
JP (1) JPH09160663A (zh)
TW (1) TW334634B (zh)

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JP3780030B2 (ja) * 1995-06-12 2006-05-31 株式会社ルネサステクノロジ 発振回路およびｄｒａｍ
US5629612A (en) * 1996-03-12 1997-05-13 Maxim Integrated Products, Inc. Methods and apparatus for improving temperature drift of references
US5933045A (en) * 1997-02-10 1999-08-03 Analog Devices, Inc. Ratio correction circuit and method for comparison of proportional to absolute temperature signals to bandgap-based signals
US5900773A (en) * 1997-04-22 1999-05-04 Microchip Technology Incorporated Precision bandgap reference circuit
US6091287A (en) * 1998-01-23 2000-07-18 Motorola, Inc. Voltage regulator with automatic accelerated aging circuit
US6002243A (en) * 1998-09-02 1999-12-14 Texas Instruments Incorporated MOS circuit stabilization of bipolar current mirror collector voltages
US6225856B1 (en) * 1999-07-30 2001-05-01 Agere Systems Cuardian Corp. Low power bandgap circuit
EP1178383B1 (en) * 2000-08-03 2012-10-03 STMicroelectronics Srl Circuit generator of a voltage signal which is independent from temperature and a few sensible from manufacturing process variables
US6469572B1 (en) * 2001-03-28 2002-10-22 Intel Corporation Forward body bias generation circuits based on diode clamps
KR100493174B1 (ko) * 2003-06-16 2005-06-02 삼성전자주식회사 주파수 분주기용 기준 전압 발생기 및 그 방법
WO2005006102A1 (en) * 2003-07-09 2005-01-20 Anton Pletersek Temperature independent low reference voltage source
US7543253B2 (en) * 2003-10-07 2009-06-02 Analog Devices, Inc. Method and apparatus for compensating for temperature drift in semiconductor processes and circuitry
JP2005332364A (ja) * 2004-04-22 2005-12-02 Oki Electric Ind Co Ltd 定電流発生回路
KR100582742B1 (ko) * 2004-12-21 2006-05-22 인티그런트 테크놀로지즈(주) 기준 전류 발생 회로
JP2006244228A (ja) * 2005-03-04 2006-09-14 Elpida Memory Inc 電源回路
US7511567B2 (en) * 2005-10-06 2009-03-31 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Bandgap reference voltage circuit
JP4817825B2 (ja) * 2005-12-08 2011-11-16 エルピーダメモリ株式会社 基準電圧発生回路
JP2007228399A (ja) * 2006-02-24 2007-09-06 Toshiba Corp 電圧制御電流源および可変利得増幅器
TWI378227B (en) * 2009-02-27 2012-12-01 Mstar Semiconductor Inc Ptat sensor and temperature sensing method thereof
JP2012084034A (ja) * 2010-10-14 2012-04-26 Toshiba Corp 定電圧定電流発生回路
JP5220826B2 (ja) * 2010-11-05 2013-06-26 株式会社半導体理工学研究センター 基準電圧源回路
US9958895B2 (en) * 2011-01-11 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Bandgap reference apparatus and methods
US8278995B1 (en) 2011-01-12 2012-10-02 National Semiconductor Corporation Bandgap in CMOS DGO process
JP2012216034A (ja) * 2011-03-31 2012-11-08 Toshiba Corp 定電流源回路
US8924765B2 (en) * 2011-07-03 2014-12-30 Ambiq Micro, Inc. Method and apparatus for low jitter distributed clock calibration
US8547166B2 (en) * 2011-07-29 2013-10-01 Macronix International Co., Ltd. Temperature compensation circuit and temperature compensated metal oxide semiconductor transistor using the same
US9634648B1 (en) * 2013-12-05 2017-04-25 Xilinx, Inc. Trimming a temperature dependent voltage reference
KR20230112326A (ko) * 2022-01-20 2023-07-27 에스케이하이닉스 주식회사 온도 변화에도 기준 전류 혹은 기준 전압을 생성하는 반도체 장치

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Publication number Priority date Publication date Assignee Title
US3617859A (en) * 1970-03-23 1971-11-02 Nat Semiconductor Corp Electrical regulator apparatus including a zero temperature coefficient voltage reference circuit
US4313082A (en) * 1980-06-30 1982-01-26 Motorola, Inc. Positive temperature coefficient current source and applications
US4375595A (en) * 1981-02-03 1983-03-01 Motorola, Inc. Switched capacitor temperature independent bandgap reference
US4368420A (en) * 1981-04-14 1983-01-11 Fairchild Camera And Instrument Corp. Supply voltage sense amplifier
US4935690A (en) * 1988-10-31 1990-06-19 Teledyne Industries, Inc. CMOS compatible bandgap voltage reference
US4849684A (en) * 1988-11-07 1989-07-18 American Telephone And Telegraph Company, At&T Bell Laaboratories CMOS bandgap voltage reference apparatus and method
US4945260A (en) * 1989-04-17 1990-07-31 Advanced Micro Devices, Inc. Temperature and supply compensated ECL bandgap reference voltage generator
US4896094A (en) * 1989-06-30 1990-01-23 Motorola, Inc. Bandgap reference circuit with improved output reference voltage
US5053640A (en) * 1989-10-25 1991-10-01 Silicon General, Inc. Bandgap voltage reference circuit
US5144223A (en) * 1991-03-12 1992-09-01 Mosaid, Inc. Bandgap voltage generator
US5148099A (en) * 1991-04-01 1992-09-15 Motorola, Inc. Radiation hardened bandgap reference voltage generator and method
US5245273A (en) * 1991-10-30 1993-09-14 Motorola, Inc. Bandgap voltage reference circuit
US5336986A (en) * 1992-02-07 1994-08-09 Crosspoint Solutions, Inc. Voltage regulator for field programmable gate arrays
US5325045A (en) * 1993-02-17 1994-06-28 Exar Corporation Low voltage CMOS bandgap with new trimming and curvature correction methods
EP0658835B1 (en) * 1993-12-17 1999-10-06 STMicroelectronics S.r.l. Low supply voltage, band-gap voltage reference

Also Published As

Publication number Publication date
JPH09160663A (ja) 1997-06-20
EP0774704A2 (en) 1997-05-21
EP0774704A3 (en) 1998-01-21
US5614816A (en) 1997-03-25

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees