TW313700B - - Google Patents

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Publication number
TW313700B
TW313700B TW085102195A TW85102195A TW313700B TW 313700 B TW313700 B TW 313700B TW 085102195 A TW085102195 A TW 085102195A TW 85102195 A TW85102195 A TW 85102195A TW 313700 B TW313700 B TW 313700B
Authority
TW
Taiwan
Prior art keywords
insulating film
contact
conductive member
active area
interlayer insulating
Prior art date
Application number
TW085102195A
Other languages
English (en)
Chinese (zh)
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of TW313700B publication Critical patent/TW313700B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW085102195A 1995-03-08 1996-02-26 TW313700B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7048063A JPH08250600A (ja) 1995-03-08 1995-03-08 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW313700B true TW313700B (enExample) 1997-08-21

Family

ID=12792902

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085102195A TW313700B (enExample) 1995-03-08 1996-02-26

Country Status (4)

Country Link
US (1) US5677249A (enExample)
JP (1) JPH08250600A (enExample)
KR (1) KR100197193B1 (enExample)
TW (1) TW313700B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121663A (en) 1997-05-22 2000-09-19 Advanced Micro Devices, Inc. Local interconnects for improved alignment tolerance and size reduction
US5956610A (en) * 1997-05-22 1999-09-21 Advanced Micro Devices, Inc. Method and system for providing electrical insulation for local interconnect in a logic circuit
US6413803B1 (en) * 1999-10-25 2002-07-02 Taiwan Semiconductor Manufacturing Company Design and process for a dual gate structure
WO2001071807A1 (en) * 2000-03-24 2001-09-27 Fujitsu Limited Semiconductor device and method of manufacture thereof
CN100394605C (zh) * 2001-01-30 2008-06-11 株式会社日立制作所 半导体集成电路器件及其制造方法
JP5519724B2 (ja) * 2001-07-17 2014-06-11 ルネサスエレクトロニクス株式会社 半導体装置
JP4173672B2 (ja) * 2002-03-19 2008-10-29 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JP2006339343A (ja) * 2005-06-01 2006-12-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
CN102870207A (zh) 2010-10-26 2013-01-09 松下电器产业株式会社 半导体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4619038A (en) * 1985-08-15 1986-10-28 Motorola, Inc. Selective titanium silicide formation
JP2689031B2 (ja) * 1991-04-01 1997-12-10 三菱電機株式会社 半導体記憶装置およびその製造方法
KR960006693B1 (ko) * 1992-11-24 1996-05-22 현대전자산업주식회사 고집적 반도체 접속장치 및 그 제조방법

Also Published As

Publication number Publication date
US5677249A (en) 1997-10-14
KR960036096A (ko) 1996-10-28
KR100197193B1 (ko) 1999-07-01
JPH08250600A (ja) 1996-09-27

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