KR100197193B1 - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

Info

Publication number
KR100197193B1
KR100197193B1 KR1019960005726A KR19960005726A KR100197193B1 KR 100197193 B1 KR100197193 B1 KR 100197193B1 KR 1019960005726 A KR1019960005726 A KR 1019960005726A KR 19960005726 A KR19960005726 A KR 19960005726A KR 100197193 B1 KR100197193 B1 KR 100197193B1
Authority
KR
South Korea
Prior art keywords
insulating film
contact
semiconductor device
conductive
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960005726A
Other languages
English (en)
Korean (ko)
Other versions
KR960036096A (ko
Inventor
마사히로 후쿠이
미즈키 세가와
도시로 아키노
미치카즈 마쯔모토
Original Assignee
모리시다 요이치
마츠시타 덴끼 산교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 모리시다 요이치, 마츠시타 덴끼 산교 가부시키가이샤 filed Critical 모리시다 요이치
Publication of KR960036096A publication Critical patent/KR960036096A/ko
Application granted granted Critical
Publication of KR100197193B1 publication Critical patent/KR100197193B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D64/011—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019960005726A 1995-03-08 1996-03-05 반도체장치 및 그 제조방법 Expired - Fee Related KR100197193B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7048063A JPH08250600A (ja) 1995-03-08 1995-03-08 半導体装置及びその製造方法
JP95-048063 1995-03-08

Publications (2)

Publication Number Publication Date
KR960036096A KR960036096A (ko) 1996-10-28
KR100197193B1 true KR100197193B1 (ko) 1999-07-01

Family

ID=12792902

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960005726A Expired - Fee Related KR100197193B1 (ko) 1995-03-08 1996-03-05 반도체장치 및 그 제조방법

Country Status (4)

Country Link
US (1) US5677249A (enExample)
JP (1) JPH08250600A (enExample)
KR (1) KR100197193B1 (enExample)
TW (1) TW313700B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121663A (en) * 1997-05-22 2000-09-19 Advanced Micro Devices, Inc. Local interconnects for improved alignment tolerance and size reduction
US5956610A (en) * 1997-05-22 1999-09-21 Advanced Micro Devices, Inc. Method and system for providing electrical insulation for local interconnect in a logic circuit
US6413803B1 (en) * 1999-10-25 2002-07-02 Taiwan Semiconductor Manufacturing Company Design and process for a dual gate structure
WO2001071807A1 (en) * 2000-03-24 2001-09-27 Fujitsu Limited Semiconductor device and method of manufacture thereof
KR100542525B1 (ko) * 2001-01-30 2006-01-11 가부시키가이샤 히타치세이사쿠쇼 반도체 집적 회로 장치의 제조 방법
JP5519724B2 (ja) * 2001-07-17 2014-06-11 ルネサスエレクトロニクス株式会社 半導体装置
JP4173672B2 (ja) * 2002-03-19 2008-10-29 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JP2006339343A (ja) 2005-06-01 2006-12-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
WO2012056615A1 (ja) 2010-10-26 2012-05-03 パナソニック株式会社 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4619038A (en) * 1985-08-15 1986-10-28 Motorola, Inc. Selective titanium silicide formation
JP2689031B2 (ja) * 1991-04-01 1997-12-10 三菱電機株式会社 半導体記憶装置およびその製造方法
KR960006693B1 (ko) * 1992-11-24 1996-05-22 현대전자산업주식회사 고집적 반도체 접속장치 및 그 제조방법

Also Published As

Publication number Publication date
JPH08250600A (ja) 1996-09-27
KR960036096A (ko) 1996-10-28
TW313700B (enExample) 1997-08-21
US5677249A (en) 1997-10-14

Similar Documents

Publication Publication Date Title
EP0186855B1 (en) Semiconductor read only memory device and method of manufacturing the same
KR100403009B1 (ko) 반도체장치및그제조방법
KR101334509B1 (ko) 능동 영역과 중첩되는 폴리 컷 개구부의 레이아웃
US6638799B2 (en) Method for manufacturing a semiconductor device having a silicon on insulator substrate
KR20030014158A (ko) 반도체 기억 장치 및 그 제조 방법
US6274914B1 (en) CMOS integrated circuits including source/drain plug
GB2315159A (en) Semiconductor device
KR100232984B1 (ko) 반도체 장치의 제조 방법
KR100197193B1 (ko) 반도체장치 및 그 제조방법
US6025628A (en) High breakdown voltage twin well device with source/drain regions widely spaced from fox regions
US5384475A (en) Semiconductor device and method of manufacturing the same
CN1326210C (zh) 具有到衬底的互连的集成电路及其方法
US6124622A (en) MIS transistor with a three-layer device isolation film surrounding the MIS transistor
EP0696061B1 (en) Method of forming a contact in an integrated circuit
KR100251229B1 (ko) 노아형 마스크 롬의 개선된 구조 및 그 제조방법
US6040234A (en) Method of manufacturing semiconductor device without bird beak effect
US20080157227A1 (en) Semiconductor device and manufacturing process therefor
KR19990083134A (ko) 반도체 장치 및 그 제조방법
US4994894A (en) Semiconductor device having an improved wiring pattern
KR100317434B1 (ko) 반도체 장치와 그 제조 방법
KR100316577B1 (ko) 반도체 메모리 셀
KR100267197B1 (ko) 반도체장치및그제조방법
JPS6237960A (ja) 読み出し専用半導体記憶装置の製造方法
JP3429715B2 (ja) 半導体装置およびその製造方法
KR20030033810A (ko) 매몰 트랜지스터를 갖는 고전압 반도체 소자 및 그 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20090209

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20100225

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20100225

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000