JPH08250600A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPH08250600A
JPH08250600A JP7048063A JP4806395A JPH08250600A JP H08250600 A JPH08250600 A JP H08250600A JP 7048063 A JP7048063 A JP 7048063A JP 4806395 A JP4806395 A JP 4806395A JP H08250600 A JPH08250600 A JP H08250600A
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor device
contact
wiring
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7048063A
Other languages
English (en)
Japanese (ja)
Inventor
Masahiro Fukui
正博 福井
Mizuki Segawa
瑞樹 瀬川
Toshirou Akinou
俊郎 秋濃
Michiichi Matsumoto
道一 松元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7048063A priority Critical patent/JPH08250600A/ja
Priority to TW085102195A priority patent/TW313700B/zh
Priority to KR1019960005726A priority patent/KR100197193B1/ko
Priority to US08/670,927 priority patent/US5677249A/en
Publication of JPH08250600A publication Critical patent/JPH08250600A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D64/011—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP7048063A 1995-03-08 1995-03-08 半導体装置及びその製造方法 Pending JPH08250600A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP7048063A JPH08250600A (ja) 1995-03-08 1995-03-08 半導体装置及びその製造方法
TW085102195A TW313700B (enExample) 1995-03-08 1996-02-26
KR1019960005726A KR100197193B1 (ko) 1995-03-08 1996-03-05 반도체장치 및 그 제조방법
US08/670,927 US5677249A (en) 1995-03-08 1996-06-26 Semiconductor apparatus and production method for the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7048063A JPH08250600A (ja) 1995-03-08 1995-03-08 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
JPH08250600A true JPH08250600A (ja) 1996-09-27

Family

ID=12792902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7048063A Pending JPH08250600A (ja) 1995-03-08 1995-03-08 半導体装置及びその製造方法

Country Status (4)

Country Link
US (1) US5677249A (enExample)
JP (1) JPH08250600A (enExample)
KR (1) KR100197193B1 (enExample)
TW (1) TW313700B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006339343A (ja) * 2005-06-01 2006-12-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2014131073A (ja) * 2001-07-17 2014-07-10 Renesas Electronics Corp 半導体装置及びその製造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121663A (en) * 1997-05-22 2000-09-19 Advanced Micro Devices, Inc. Local interconnects for improved alignment tolerance and size reduction
US5956610A (en) * 1997-05-22 1999-09-21 Advanced Micro Devices, Inc. Method and system for providing electrical insulation for local interconnect in a logic circuit
US6413803B1 (en) * 1999-10-25 2002-07-02 Taiwan Semiconductor Manufacturing Company Design and process for a dual gate structure
WO2001071807A1 (en) * 2000-03-24 2001-09-27 Fujitsu Limited Semiconductor device and method of manufacture thereof
KR100542525B1 (ko) * 2001-01-30 2006-01-11 가부시키가이샤 히타치세이사쿠쇼 반도체 집적 회로 장치의 제조 방법
JP4173672B2 (ja) * 2002-03-19 2008-10-29 株式会社ルネサステクノロジ 半導体装置及びその製造方法
WO2012056615A1 (ja) 2010-10-26 2012-05-03 パナソニック株式会社 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4619038A (en) * 1985-08-15 1986-10-28 Motorola, Inc. Selective titanium silicide formation
JP2689031B2 (ja) * 1991-04-01 1997-12-10 三菱電機株式会社 半導体記憶装置およびその製造方法
KR960006693B1 (ko) * 1992-11-24 1996-05-22 현대전자산업주식회사 고집적 반도체 접속장치 및 그 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014131073A (ja) * 2001-07-17 2014-07-10 Renesas Electronics Corp 半導体装置及びその製造方法
JP2006339343A (ja) * 2005-06-01 2006-12-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR960036096A (ko) 1996-10-28
TW313700B (enExample) 1997-08-21
KR100197193B1 (ko) 1999-07-01
US5677249A (en) 1997-10-14

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Legal Events

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Effective date: 19990601