TW301771B - - Google Patents
Download PDFInfo
- Publication number
- TW301771B TW301771B TW085100691A TW85100691A TW301771B TW 301771 B TW301771 B TW 301771B TW 085100691 A TW085100691 A TW 085100691A TW 85100691 A TW85100691 A TW 85100691A TW 301771 B TW301771 B TW 301771B
- Authority
- TW
- Taiwan
- Prior art keywords
- package
- convex
- sample
- special
- please
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 23
- 238000005498 polishing Methods 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000009434 installation Methods 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 230000002079 cooperative effect Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 28
- 239000010408 film Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 239000012459 cleaning agent Substances 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000012050 conventional carrier Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003796 beauty Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 101001057161 Xenopus laevis MDS1 and EVI1 complex locus protein EVI1-A Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38742495A | 1995-02-10 | 1995-02-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW301771B true TW301771B (enExample) | 1997-04-01 |
Family
ID=23529807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085100691A TW301771B (enExample) | 1995-02-10 | 1996-01-22 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5766058A (enExample) |
| EP (1) | EP0808231B1 (enExample) |
| DE (1) | DE69610821T2 (enExample) |
| TW (1) | TW301771B (enExample) |
| WO (1) | WO1996024467A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10235552A (ja) * | 1997-02-24 | 1998-09-08 | Ebara Corp | ポリッシング装置 |
| US6074288A (en) * | 1997-10-30 | 2000-06-13 | Lsi Logic Corporation | Modified carrier films to produce more uniformly polished substrate surfaces |
| US5961375A (en) * | 1997-10-30 | 1999-10-05 | Lsi Logic Corporation | Shimming substrate holder assemblies to produce more uniformly polished substrate surfaces |
| US6142857A (en) * | 1998-01-06 | 2000-11-07 | Speedfam-Ipec Corporation | Wafer polishing with improved backing arrangement |
| US6113466A (en) * | 1999-01-29 | 2000-09-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for controlling polishing profile in chemical mechanical polishing |
| US6309277B1 (en) * | 1999-03-03 | 2001-10-30 | Advanced Micro Devices, Inc. | System and method for achieving a desired semiconductor wafer surface profile via selective polishing pad conditioning |
| US6217418B1 (en) | 1999-04-14 | 2001-04-17 | Advanced Micro Devices, Inc. | Polishing pad and method for polishing porous materials |
| US6722963B1 (en) | 1999-08-03 | 2004-04-20 | Micron Technology, Inc. | Apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane |
| US6467120B1 (en) | 1999-09-08 | 2002-10-22 | International Business Machines Corporation | Wafer cleaning brush profile modification |
| JP3342686B2 (ja) * | 1999-12-28 | 2002-11-11 | 信越半導体株式会社 | ウェーハ研磨方法及びウェーハ研磨装置 |
| US6786809B1 (en) * | 2001-03-30 | 2004-09-07 | Cypress Semiconductor Corp. | Wafer carrier, wafer carrier components, and CMP system for polishing a semiconductor topography |
| US6761619B1 (en) | 2001-07-10 | 2004-07-13 | Cypress Semiconductor Corp. | Method and system for spatial uniform polishing |
| DE10214272B4 (de) * | 2002-03-28 | 2004-09-02 | Forschungszentrum Jülich GmbH | Halterung für einen Wafer |
| KR102792557B1 (ko) * | 2020-07-15 | 2025-04-08 | 삼성전자주식회사 | 발광 소자, 발광 소자의 제조 방법, 및 발광 소자를 포함하는 디스플레이 장치 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3841031A (en) * | 1970-10-21 | 1974-10-15 | Monsanto Co | Process for polishing thin elements |
| US3888053A (en) * | 1973-05-29 | 1975-06-10 | Rca Corp | Method of shaping semiconductor workpiece |
| US3911562A (en) * | 1974-01-14 | 1975-10-14 | Signetics Corp | Method of chemical polishing of planar silicon structures having filled grooves therein |
| US4009539A (en) * | 1975-06-16 | 1977-03-01 | Spitfire Tool & Machine Co., Inc. | Lapping machine with vacuum workholder |
| US4193226A (en) * | 1977-09-21 | 1980-03-18 | Kayex Corporation | Polishing apparatus |
| US4508161A (en) * | 1982-05-25 | 1985-04-02 | Varian Associates, Inc. | Method for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer |
| US4944836A (en) * | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
| US4724222A (en) * | 1986-04-28 | 1988-02-09 | American Telephone And Telegraph Company, At&T Bell Laboratories | Wafer chuck comprising a curved reference surface |
| JPS63232953A (ja) * | 1987-03-19 | 1988-09-28 | Canon Inc | 研磨工具 |
| US4811522A (en) * | 1987-03-23 | 1989-03-14 | Gill Jr Gerald L | Counterbalanced polishing apparatus |
| US5291692A (en) * | 1989-09-14 | 1994-03-08 | Olympus Optical Company Limited | Polishing work holder |
| US5234867A (en) * | 1992-05-27 | 1993-08-10 | Micron Technology, Inc. | Method for planarizing semiconductor wafers with a non-circular polishing pad |
| US5036630A (en) * | 1990-04-13 | 1991-08-06 | International Business Machines Corporation | Radial uniformity control of semiconductor wafer polishing |
| US5131968A (en) * | 1990-07-31 | 1992-07-21 | Motorola, Inc. | Gradient chuck method for wafer bonding employing a convex pressure |
| DE4108786C2 (de) * | 1991-03-18 | 1995-01-05 | Hydromatik Gmbh | Leichtkolben für hydrostatische Axial- und Radialkolbenmaschinen |
| US5069002A (en) * | 1991-04-17 | 1991-12-03 | Micron Technology, Inc. | Apparatus for endpoint detection during mechanical planarization of semiconductor wafers |
| US5245794A (en) * | 1992-04-09 | 1993-09-21 | Advanced Micro Devices, Inc. | Audio end point detector for chemical-mechanical polishing and method therefor |
| US5476414A (en) * | 1992-09-24 | 1995-12-19 | Ebara Corporation | Polishing apparatus |
| DE69316849T2 (de) * | 1992-11-27 | 1998-09-10 | Ebara Corp., Tokio/Tokyo | Verfahren und Gerät zum Polieren eines Werkstückes |
| US5302233A (en) * | 1993-03-19 | 1994-04-12 | Micron Semiconductor, Inc. | Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP) |
| US5423716A (en) * | 1994-01-05 | 1995-06-13 | Strasbaugh; Alan | Wafer-handling apparatus having a resilient membrane which holds wafer when a vacuum is applied |
-
1996
- 1996-01-11 DE DE69610821T patent/DE69610821T2/de not_active Expired - Lifetime
- 1996-01-11 EP EP96902099A patent/EP0808231B1/en not_active Expired - Lifetime
- 1996-01-11 WO PCT/US1996/000152 patent/WO1996024467A1/en not_active Ceased
- 1996-01-22 TW TW085100691A patent/TW301771B/zh not_active IP Right Cessation
-
1997
- 1997-01-21 US US08/784,619 patent/US5766058A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0808231A1 (en) | 1997-11-26 |
| DE69610821T2 (de) | 2001-06-07 |
| EP0808231B1 (en) | 2000-11-02 |
| WO1996024467A1 (en) | 1996-08-15 |
| US5766058A (en) | 1998-06-16 |
| DE69610821D1 (de) | 2000-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW301771B (enExample) | ||
| TW446601B (en) | Selective damascene chemical mechanical polishing | |
| TW519702B (en) | Planarization process for semiconductor substrates | |
| US4256535A (en) | Method of polishing a semiconductor wafer | |
| TW543110B (en) | Rubbing pad | |
| JP2588060B2 (ja) | 半導体ウェーハの研磨用チャック | |
| TW467803B (en) | Improved CMP polishing PAD | |
| TW450867B (en) | Improved end effector for pad conditioning | |
| TWI309190B (en) | Method of using a soft subpad for chemical mechanical polishing | |
| JPH10180618A (ja) | Cmp装置の研磨パッドの調整方法 | |
| TW200529312A (en) | CMP apparatus and process sequence | |
| TW544364B (en) | Method and apparatus for simulating, and method and apparatus for polishing using the same | |
| TW200906554A (en) | Improved chemical mechanical polishing pad and methods of making and using same | |
| JP5768554B2 (ja) | 磁気記録媒体用ガラス基板の製造方法および磁気記録媒体用ガラス基板 | |
| JP2004189846A (ja) | 研磨材固定用両面粘着テープ | |
| CN112405337B (zh) | 一种抛光垫及半导体器件的制造方法 | |
| JP2900777B2 (ja) | 研磨部材およびウエーハ研磨装置 | |
| JPH11170155A (ja) | 研磨装置 | |
| CN112847124A (zh) | 一种自动修正双面抛光过程中的晶圆平坦度的方法和系统 | |
| JPH10329005A (ja) | 研磨布及び研磨装置 | |
| JPS59170175A (ja) | 非晶質酸化アルミニウム表面の化学的−機械的研摩方法 | |
| JP2000084837A (ja) | 研摩ヘッド及び研摩方法 | |
| JPH11216661A (ja) | ウェーハの枚葉式研磨方法とその装置 | |
| JPS632656A (ja) | ウエハ研磨方法及びそれに用いるウエハ研磨基板 | |
| JP2000000757A (ja) | 研磨装置及び研磨方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |