TW290724B - - Google Patents

Info

Publication number
TW290724B
TW290724B TW085104692A TW85104692A TW290724B TW 290724 B TW290724 B TW 290724B TW 085104692 A TW085104692 A TW 085104692A TW 85104692 A TW85104692 A TW 85104692A TW 290724 B TW290724 B TW 290724B
Authority
TW
Taiwan
Application number
TW085104692A
Original Assignee
Siemens Ag
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Ibm filed Critical Siemens Ag
Application granted granted Critical
Publication of TW290724B publication Critical patent/TW290724B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/02Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03Making the capacitor or connections thereto
    • H10B12/038Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW085104692A 1995-03-29 1996-04-19 TW290724B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/412,442 US5543348A (en) 1995-03-29 1995-03-29 Controlled recrystallization of buried strap in a semiconductor memory device

Publications (1)

Publication Number Publication Date
TW290724B true TW290724B (zh) 1996-11-11

Family

ID=23632996

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085104692A TW290724B (zh) 1995-03-29 1996-04-19

Country Status (5)

Country Link
US (2) US5543348A (zh)
EP (1) EP0739033A3 (zh)
JP (1) JP3078223B2 (zh)
KR (1) KR100202278B1 (zh)
TW (1) TW290724B (zh)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6328794B1 (en) * 1993-06-26 2001-12-11 International Business Machines Corporation Method of controlling stress in a film
US5827765A (en) * 1996-02-22 1998-10-27 Siemens Aktiengesellschaft Buried-strap formation in a dram trench capacitor
US5939333A (en) * 1996-05-30 1999-08-17 Micron Technology, Inc. Silicon nitride deposition method
KR100269289B1 (ko) * 1997-02-19 2000-10-16 윤종용 실리콘막의결정화방법
US6025224A (en) * 1997-03-31 2000-02-15 Siemens Aktiengesellschaft Device with asymmetrical channel dopant profile
US5909044A (en) * 1997-07-18 1999-06-01 International Business Machines Corporation Process for forming a high density semiconductor device
JP3132435B2 (ja) 1997-09-22 2001-02-05 日本電気株式会社 半導体装置の製造方法
US5981332A (en) * 1997-09-30 1999-11-09 Siemens Aktiengesellschaft Reduced parasitic leakage in semiconductor devices
US5990511A (en) * 1997-10-16 1999-11-23 International Business Machines Corporation Memory cell with transfer device node in selective polysilicon
US6583457B1 (en) 1997-10-28 2003-06-24 Micron Technology, Inc. Recessed container cells and method of forming the same
US5963814A (en) * 1997-10-28 1999-10-05 Micron Technology, Inc. Method of forming recessed container cells by wet etching conductive layer and dissimilar layer formed over conductive layer
DE19752968C1 (de) * 1997-11-28 1999-06-24 Siemens Ag Speicherzellenanordnung und Verfahren zu deren Herstellung
US6066566A (en) * 1998-01-28 2000-05-23 International Business Machines Corporation High selectivity collar oxide etch processes
TW471164B (en) * 1998-06-02 2002-01-01 Ibm Deep trench-based storage capacitor and method of fabricating
EP0971414A1 (de) * 1998-06-15 2000-01-12 Siemens Aktiengesellschaft Grabenkondensator mit Isolationskragen und vergrabenen Kontakt und entsprechendes Herstellungsverfahren
US6828191B1 (en) 1998-06-15 2004-12-07 Siemens Aktiengesellschaft Trench capacitor with an insulation collar and method for producing a trench capacitor
JP3231020B2 (ja) * 1998-08-06 2001-11-19 株式会社東芝 半導体装置
US6110792A (en) * 1998-08-19 2000-08-29 International Business Machines Corporation Method for making DRAM capacitor strap
GB2341483B (en) * 1998-09-11 2003-10-01 Siemens Plc Improved process for dram cell production
US6222218B1 (en) * 1998-09-14 2001-04-24 International Business Machines Corporation DRAM trench
DE19843641A1 (de) * 1998-09-23 2000-04-20 Siemens Ag Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren
JP4021593B2 (ja) 1998-09-25 2007-12-12 株式会社東芝 半導体装置およびその製造方法
US6194736B1 (en) * 1998-12-17 2001-02-27 International Business Machines Corporation Quantum conductive recrystallization barrier layers
US6333531B1 (en) 1999-01-29 2001-12-25 International Business Machines Corporation Dopant control of semiconductor devices
US6331459B1 (en) * 1999-02-18 2001-12-18 Infineon Technologies Ag Use of dummy poly spacers and divot fill techniques for DT-aligned processing after STI formation for advanced deep trench capacitor DRAM
US6140175A (en) * 1999-03-03 2000-10-31 International Business Machines Corporation Self-aligned deep trench DRAM array device
DE19911149C1 (de) * 1999-03-12 2000-05-18 Siemens Ag Integrierte Schaltungsanordnung, die eine in einem Substrat vergrabene leitende Struktur umfaßt, die mit einem Gebiet des Substrats elektrisch verbunden ist, und Verfahren zu deren Herstellung
US6204140B1 (en) * 1999-03-24 2001-03-20 Infineon Technologies North America Corp. Dynamic random access memory
US6190971B1 (en) * 1999-05-13 2001-02-20 International Business Machines Corporation Formation of 5F2 cell with partially vertical transistor and gate conductor aligned buried strap with raised shallow trench isolation region
US6440794B1 (en) 1999-05-28 2002-08-27 International Business Machines Corporation Method for forming an array of DRAM cells by employing a self-aligned adjacent node isolation technique
US6229173B1 (en) * 1999-06-23 2001-05-08 International Business Machines Corporation Hybrid 5F2 cell layout for buried surface strap aligned to vertical transistor
TW483152B (en) * 1999-07-01 2002-04-11 Ibm Improved methods of forming the buried strap and its quantum barrier in deep trench cell capacitors
US6320215B1 (en) 1999-07-22 2001-11-20 International Business Machines Corporation Crystal-axis-aligned vertical side wall device
US6380575B1 (en) 1999-08-31 2002-04-30 International Business Machines Corporation DRAM trench cell
DE19944011B4 (de) * 1999-09-14 2007-10-18 Infineon Technologies Ag Verfahren zur Bildung mindestens zweier Speicherzellen eines Halbleiterspeichers
US6372573B2 (en) 1999-10-26 2002-04-16 Kabushiki Kaisha Toshiba Self-aligned trench capacitor capping process for high density DRAM cells
US6339228B1 (en) * 1999-10-27 2002-01-15 International Business Machines Corporation DRAM cell buried strap leakage measurement structure and method
DE19957123B4 (de) * 1999-11-26 2006-11-16 Infineon Technologies Ag Verfahren zur Herstellung einer Zellenanordnung für einen dynamischen Halbleiterspeicher
US6150670A (en) 1999-11-30 2000-11-21 International Business Machines Corporation Process for fabricating a uniform gate oxide of a vertical transistor
US6365512B1 (en) 2000-06-21 2002-04-02 Infineon Technologies Ag Method and apparatus for a direct buried strap for same level contact interconnections for semiconductor devices
US6417063B1 (en) 2000-06-22 2002-07-09 Infineon Technologies Richmond, Lp Folded deep trench capacitor and method
US6369419B1 (en) 2000-06-23 2002-04-09 International Business Machines Corporation Self-aligned near surface strap for high density trench DRAMS
US6503798B1 (en) 2000-06-30 2003-01-07 International Business Machines Corporation Low resistance strap for high density trench DRAMS
US6774426B2 (en) 2000-12-19 2004-08-10 Micron Technology, Inc. Flash cell with trench source-line connection
FR2819637B1 (fr) * 2001-01-12 2003-05-30 St Microelectronics Sa Circuit integre comportant un dispositif semiconducteur de type photodiode, et procede de fabrication
FR2819636B1 (fr) * 2001-01-12 2003-09-26 St Microelectronics Sa Circuit integre comportant un point memoire de type dram, et procede de fabrication
EP1366517A2 (de) 2001-03-09 2003-12-03 Infineon Technologies AG Halbleiterspeicherzelle mit grabenkondensator und verfahren zu ihrer herstellung
TW507365B (en) * 2001-03-09 2002-10-21 Nanya Technology Corp Method for treating surface of sidewall of deep trench
US6518118B2 (en) 2001-03-15 2003-02-11 International Business Machines Corporation Structure and process for buried bitline and single sided buried conductor formation
US6653678B2 (en) * 2001-07-13 2003-11-25 International Business Machines Corporation Reduction of polysilicon stress in trench capacitors
US6501117B1 (en) * 2001-11-05 2002-12-31 International Business Machines Corporation Static self-refreshing DRAM structure and operating mode
US6624031B2 (en) * 2001-11-20 2003-09-23 International Business Machines Corporation Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure
US20030107111A1 (en) * 2001-12-10 2003-06-12 International Business Machines Corporation A 3-d microelectronic structure including a vertical thermal nitride mask
DE10208774B4 (de) * 2002-02-28 2005-09-15 Infineon Technologies Ag Verfahren zur Herstellung einer Speicherzelle
DE10210434B4 (de) * 2002-03-09 2007-12-27 Infineon Technologies Ag Verfahren zum Erzeugen einer Shallow-Trench-Isolation in einem Halbleiterbaustein und Verwendung eines solchen Verfahrens
US6620677B1 (en) * 2002-05-31 2003-09-16 Infineon Technologies Ag Support liner for isolation trench height control in vertical DRAM processing
US6635526B1 (en) 2002-06-07 2003-10-21 Infineon Technologies Ag Structure and method for dual work function logic devices in vertical DRAM process
US6936512B2 (en) * 2002-09-27 2005-08-30 International Business Machines Corporation Semiconductor method and structure for simultaneously forming a trench capacitor dielectric and trench sidewall device dielectric
TW587305B (en) * 2003-05-30 2004-05-11 Nanya Technology Corp A method for controlling the upper width of a trench
DE10334547B4 (de) * 2003-07-29 2006-07-27 Infineon Technologies Ag Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen, der über einen vergrabenen Kontakt einseitig mit einem Substrat elektrisch verbunden ist
US7232719B2 (en) * 2005-03-28 2007-06-19 Promos Technologies Inc. Memories having a charge storage node at least partially located in a trench in a semiconductor substrate and electrically coupled to a source/drain region formed in the substrate
US7153738B2 (en) * 2005-05-19 2006-12-26 International Business Machines Corporation Method for making a trench memory cell
TW200820433A (en) * 2006-10-23 2008-05-01 Promos Technologies Inc Method for preparing a trench capacitor structure
US8318574B2 (en) 2010-07-30 2012-11-27 International Business Machines Corporation SOI trench DRAM structure with backside strap
US8492811B2 (en) 2010-09-20 2013-07-23 International Business Machines Corporation Self-aligned strap for embedded capacitor and replacement gate devices

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
US4444620A (en) * 1983-09-12 1984-04-24 Bell Telephone Laboratories, Incorporated Growth of oriented single crystal semiconductor on insulator
JPS60117613A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
DE3689004T2 (de) * 1985-02-13 1994-01-20 Toshiba Kawasaki Kk Halbleiterspeicherzelle.
US4659392A (en) * 1985-03-21 1987-04-21 Hughes Aircraft Company Selective area double epitaxial process for fabricating silicon-on-insulator structures for use with MOS devices and integrated circuits
US4820652A (en) * 1985-12-11 1989-04-11 Sony Corporation Manufacturing process and structure of semiconductor memory devices
US4849371A (en) * 1986-12-22 1989-07-18 Motorola Inc. Monocrystalline semiconductor buried layers for electrical contacts to semiconductor devices
JPS63184360A (ja) * 1987-01-27 1988-07-29 Oki Electric Ind Co Ltd 半導体記憶装置とその製造方法
US4816893A (en) * 1987-02-24 1989-03-28 Hughes Aircraft Company Low leakage CMOS/insulator substrate devices and method of forming the same
US4753895A (en) * 1987-02-24 1988-06-28 Hughes Aircraft Company Method of forming low leakage CMOS device on insulating substrate
US4916524A (en) * 1987-03-16 1990-04-10 Texas Instruments Incorporated Dram cell and method
EP0283964B1 (en) * 1987-03-20 1994-09-28 Nec Corporation Dynamic random access memory device having a plurality of improved one-transistor type memory cells
US4826300A (en) * 1987-07-30 1989-05-02 Hughes Aircraft Company Silicon-on-sapphire liquid crystal light valve and method
JPS6445166A (en) * 1987-08-14 1989-02-17 Toshiba Corp Manufacture of semiconductor device
US4942554A (en) * 1987-11-26 1990-07-17 Siemens Aktiengesellschaft Three-dimensional, one-transistor cell arrangement for dynamic semiconductor memories comprising trench capacitor and method for manufacturing same
US4910709A (en) * 1988-08-10 1990-03-20 International Business Machines Corporation Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell
US4915746A (en) * 1988-08-15 1990-04-10 Welsch Gerhard E Method of forming high temperature barriers in structural metals to make such metals creep resistant at high homologous temperatures
JPH02246267A (ja) * 1989-03-20 1990-10-02 Fujitsu Ltd 半導体装置の製造方法
US5138420A (en) * 1989-11-24 1992-08-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having first and second type field effect transistors separated by a barrier
US4988637A (en) * 1990-06-29 1991-01-29 International Business Machines Corp. Method for fabricating a mesa transistor-trench capacitor memory cell structure
US5214603A (en) * 1991-08-05 1993-05-25 International Business Machines Corporation Folded bitline, ultra-high density dynamic random access memory having access transistors stacked above trench storage capacitors
US5262662A (en) * 1991-10-31 1993-11-16 Micron Technology, Inc. Storage node capacitor having tungsten and etched tin storage node capacitor plate
US5168073A (en) * 1991-10-31 1992-12-01 Micron Technology, Inc. Method for fabricating storage node capacitor having tungsten and etched tin storage node capacitor plate
US5192703A (en) * 1991-10-31 1993-03-09 Micron Technology, Inc. Method of making tungsten contact core stack capacitor
US5170243A (en) * 1991-11-04 1992-12-08 International Business Machines Corporation Bit line configuration for semiconductor memory
US5185294A (en) * 1991-11-22 1993-02-09 International Business Machines Corporation Boron out-diffused surface strap process
JPH0799771B2 (ja) * 1992-06-26 1995-10-25 インターナショナル・ビジネス・マシーンズ・コーポレイション 皮膜中の応力を制御する方法
US5308783A (en) * 1992-12-16 1994-05-03 Siemens Aktiengesellschaft Process for the manufacture of a high density cell array of gain memory cells
US5312768A (en) * 1993-03-09 1994-05-17 Micron Technology, Inc. Integrated process for fabricating raised, source/drain, short-channel transistors
US5422294A (en) * 1993-05-03 1995-06-06 Noble, Jr.; Wendell P. Method of making a trench capacitor field shield with sidewall contact
US5376566A (en) * 1993-11-12 1994-12-27 Micron Semiconductor, Inc. N-channel field effect transistor having an oblique arsenic implant for lowered series resistance
US5389559A (en) * 1993-12-02 1995-02-14 International Business Machines Corporation Method of forming integrated interconnect for very high density DRAMs
US5360758A (en) * 1993-12-03 1994-11-01 International Business Machines Corporation Self-aligned buried strap for trench type DRAM cells
US5413950A (en) * 1994-04-22 1995-05-09 United Microelectronics Corporation Method of forming a DRAM stacked capacitor cell
US5380673A (en) * 1994-05-06 1995-01-10 United Microelectronics Corporation Dram capacitor structure

Also Published As

Publication number Publication date
JP3078223B2 (ja) 2000-08-21
EP0739033A2 (en) 1996-10-23
JPH0992799A (ja) 1997-04-04
US5670805A (en) 1997-09-23
KR100202278B1 (ko) 1999-06-15
US5543348A (en) 1996-08-06
EP0739033A3 (en) 2000-01-12

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees