TW284885B - - Google Patents

Info

Publication number
TW284885B
TW284885B TW085100620A TW85100620A TW284885B TW 284885 B TW284885 B TW 284885B TW 085100620 A TW085100620 A TW 085100620A TW 85100620 A TW85100620 A TW 85100620A TW 284885 B TW284885 B TW 284885B
Authority
TW
Taiwan
Application number
TW085100620A
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of TW284885B publication Critical patent/TW284885B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
TW085100620A 1995-02-13 1996-01-19 TW284885B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/387,688 US5534804A (en) 1995-02-13 1995-02-13 CMOS power-on reset circuit using hysteresis

Publications (1)

Publication Number Publication Date
TW284885B true TW284885B (zh) 1996-09-01

Family

ID=23530967

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085100620A TW284885B (zh) 1995-02-13 1996-01-19

Country Status (5)

Country Link
US (1) US5534804A (zh)
JP (1) JPH11500281A (zh)
KR (1) KR19980701483A (zh)
TW (1) TW284885B (zh)
WO (1) WO1996025797A1 (zh)

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US5821787A (en) * 1994-10-05 1998-10-13 Altera Corporation Power-on reset circuit with well-defined reassertion voltage
US5864247A (en) * 1995-08-21 1999-01-26 Matsushita Electronics Corporation Voltage detection circuit, power-on/off reset circuit, and semiconductor device
JPH0962808A (ja) * 1995-08-25 1997-03-07 Mitsubishi Electric Corp 非接触ｉｃカード及び非接触ｉｃカードシステム
US5929673A (en) * 1996-04-08 1999-07-27 Texas Instruments Incorporated Ultra low current power-up signal switching circuit
US6429710B1 (en) * 1996-09-09 2002-08-06 Etron Technology, Inc. Input buffer with compensation for process variation
US5831460A (en) * 1997-02-26 1998-11-03 Xilinx, Inc. Power-on reset circuit with separate power-up and brown-out trigger levels
US6253319B1 (en) * 1998-10-22 2001-06-26 Compaq Computer Corporation Method and apparatus for restoring a computer to a clear CMOS configuration
JP2000165220A (ja) * 1998-11-27 2000-06-16 Fujitsu Ltd 起動回路及び半導体集積回路装置
US6198318B1 (en) * 1999-01-28 2001-03-06 Legerity, Inc. Power-on-reset circuit
AU2002258369A1 (en) * 2000-12-19 2002-09-19 Smal Camera Technologies, Inc. Compact digital camera system
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US6791396B2 (en) * 2001-10-24 2004-09-14 Saifun Semiconductors Ltd. Stack element circuit
JP2003163588A (ja) * 2001-11-28 2003-06-06 Fujitsu Ltd 起動回路
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6744291B2 (en) 2002-08-30 2004-06-01 Atmel Corporation Power-on reset circuit
US6686783B1 (en) 2002-10-28 2004-02-03 Analog Devices, Inc. Power-on reset system
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US6842383B2 (en) 2003-01-30 2005-01-11 Saifun Semiconductors Ltd. Method and circuit for operating a memory cell using a single charge pump
US20040151032A1 (en) * 2003-01-30 2004-08-05 Yan Polansky High speed and low noise output buffer
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US6885244B2 (en) 2003-03-24 2005-04-26 Saifun Semiconductors Ltd. Operational amplifier with fast rise time
US6906966B2 (en) 2003-06-16 2005-06-14 Saifun Semiconductors Ltd. Fast discharge for program and verification
US7161396B1 (en) 2003-08-20 2007-01-09 Xilinx, Inc. CMOS power on reset circuit
US7050319B2 (en) * 2003-12-03 2006-05-23 Micron Technology, Inc. Memory architecture and method of manufacture and operation thereof
US7411433B2 (en) * 2003-12-18 2008-08-12 Stmicroelectronics, Inc. Reset ramp control
US7176728B2 (en) * 2004-02-10 2007-02-13 Saifun Semiconductors Ltd High voltage low power driver
US8339102B2 (en) * 2004-02-10 2012-12-25 Spansion Israel Ltd System and method for regulating loading on an integrated circuit power supply
US7652930B2 (en) 2004-04-01 2010-01-26 Saifun Semiconductors Ltd. Method, circuit and system for erasing one or more non-volatile memory cells
US7187595B2 (en) * 2004-06-08 2007-03-06 Saifun Semiconductors Ltd. Replenishment for internal voltage
US7190212B2 (en) * 2004-06-08 2007-03-13 Saifun Semiconductors Ltd Power-up and BGREF circuitry
US7256438B2 (en) * 2004-06-08 2007-08-14 Saifun Semiconductors Ltd MOS capacitor with reduced parasitic capacitance
US7095655B2 (en) * 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US7196561B2 (en) * 2004-08-25 2007-03-27 Agere Systems Inc. Programmable reset signal that is independent of supply voltage ramp rate
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7450359B1 (en) * 2005-03-03 2008-11-11 National Semiconductor Corporation System and method for providing a temperature compensated under-voltage-lockout circuit
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
US7184313B2 (en) 2005-06-17 2007-02-27 Saifun Semiconductors Ltd. Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells
US7804126B2 (en) 2005-07-18 2010-09-28 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
US20070024332A1 (en) * 2005-07-28 2007-02-01 Standard Microsystems Corporation All MOS power-on-reset circuit
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7567098B2 (en) * 2006-08-31 2009-07-28 Atmel Corporation Multi-threshold reset circuit
US7417476B1 (en) 2007-04-24 2008-08-26 Smartech Worldwide Limited Power-on-reset circuit with output reset to ground voltage during power off
US8106688B2 (en) * 2009-11-18 2012-01-31 Smartech Worldwide Limited Power-on-reset circuit with brown-out reset for multiple power supplies
CN102761322B (zh) 2011-04-28 2016-08-03 飞兆半导体公司 上电复位电路及其复位方法
KR101226030B1 (ko) * 2011-12-28 2013-01-24 주식회사 하이딥 히스테리시스 특성을 갖는 회로 및 이를 포함하는 파워 온 리셋/브라운아웃 디텍션 회로
US9503090B2 (en) 2014-08-19 2016-11-22 International Business Machines Corporation High speed level translator
US9397654B2 (en) * 2014-10-09 2016-07-19 Qualcomm Incorporated Low power externally biased power-on-reset circuit
KR102237580B1 (ko) * 2017-05-19 2021-04-07 삼성전자주식회사 파워 온/오프 리셋 회로 및 이를 포함하는 리셋 신호 발생 회로
CN110134174B (zh) 2018-02-08 2021-03-19 华邦电子股份有限公司 具有磁滞功能的电源启动重置电路
TWI659610B (zh) * 2018-02-08 2019-05-11 華邦電子股份有限公司 具有磁滯功能之電源啟動重置電路
CN109257035B (zh) * 2018-08-30 2022-04-05 龙迅半导体（合肥）股份有限公司 一种上电复位电路
JP2023049974A (ja) * 2021-09-29 2023-04-10 ラピステクノロジー株式会社 半導体装置、パワーオンリセット回路、及び半導体装置の制御方法

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US4013902A (en) * 1975-08-06 1977-03-22 Honeywell Inc. Initial reset signal generator and low voltage detector
US4409501A (en) * 1981-07-20 1983-10-11 Motorola Inc. Power-on reset circuit
JPS5877317A (ja) * 1981-11-02 1983-05-10 Matsushita Electric Ind Co Ltd シユミツト・トリガ回路
US4539489A (en) * 1983-06-22 1985-09-03 Motorola, Inc. CMOS Schmitt trigger circuit
US4983857A (en) * 1989-07-31 1991-01-08 Sgs-Thomson Microelectronics, Inc. Power-up reset circuit
US4970408A (en) * 1989-10-30 1990-11-13 Motorola, Inc. CMOS power-on reset circuit
JPH0472912A (ja) * 1990-07-13 1992-03-06 Nec Ic Microcomput Syst Ltd パワーオンリセット回路
JP2591305B2 (ja) * 1990-09-30 1997-03-19 日本電気株式会社 パワーオンリセット回路
US5130569A (en) * 1991-03-12 1992-07-14 Harris Corporation Power-on reset circuit
FR2674633B1 (fr) * 1991-03-28 1995-06-23 Sgs Thomson Microelectronics Circuit de detection d'un seuil haut d'une tension d'alimentation.
IT1252334B (it) * 1991-11-26 1995-06-08 Sgs Thomson Microelectronics Circuito di inizializazzione particolarmente per registri di memoria
US5334883A (en) * 1993-02-03 1994-08-02 Elantec, Inc. Circuit for introducing hysterisis

Also Published As

Publication number Publication date
US5534804A (en) 1996-07-09
WO1996025797A1 (en) 1996-08-22
JPH11500281A (ja) 1999-01-06
KR19980701483A (ko) 1998-05-15

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